Abstract: A method, according to one embodiment, includes selecting, from a buffer, a combination of compressed logical pages of data to maximize an amount of used space in an error correction code container. The method also preferably includes processing the combination of compressed logical pages to generate error correction code data. Furthermore, the method may include writing the data corresponding to the combination of compressed logical pages and the associated error correction code data to a non-volatile random access memory. Other systems, methods, and computer program products are described in additional embodiments.

Abstract: A method, according to one embodiment, it dudes assigning data having a first heat to a first data stream, assigning data having a second heat to a second data stream, and writing the data streams in parallel to page-stripes having a same index across a series of planes of memory. Other systems, methods, and computer program products are described in additional embodiments.

Abstract: A multidimensional storage array system includes storage elements arranged in storage array partitions, multiple input shifters, and multiple output shifters. A particular input shifter and output shifter is associated with a particular storage array partition. The storage elements are physically arranged into rows and columns and each store particular bit(s) of a data word. The input shifter implements a positional shift to loaded data words to the associated partition. The output shifter reverses the shift of a received shifted data word that is requested by a requesting device such as a decoder. The shifted data words in the storage array expose, for example, row addressed data words or column addressed data word sections so that multiple row or column addressed data words may be unloaded from the array simultaneously in a single hardware clock cycle.

Abstract: In a data storage system including a non-volatile random access memory (NVRAM) array, a page is a smallest granularity of the NVRAM array that can be accessed by read and write operations, and a memory block containing multiple pages is a smallest granularity of the NVRAM array that can be erased. Data are stored in the NVRAM array in page stripes distributed across multiple memory blocks. In response to detection of an error in a particular page of a particular block of the NVRAM array, only the particular page of the particular block is retired, such that at least two of the multiple memory blocks across which a particular one of the page stripes is distributed include differing numbers of active (non-retired) pages.

Abstract: In at least one embodiment, a data storage system includes a non-volatile memory array including a plurality of blocks of physical memory, each including multiple pages. The data storage system further includes a controller that maintains a data structure identifying blocks of physical memory in the memory array that currently do not store valid data. The controller, responsive to receipt of a write input/output operation (IOP) specifying an address and write data, selects a particular block from among the blocks identified in the data structure prior to a dwell time threshold for the particular block being satisfied, programs a page within the selected block with the write data, and associates the address with the selected block.

Abstract: Methods and apparatuses for reduction of Read Disturb errors in a NAND FLASH memory system comprise a controller configured to organize FLASH memory devices into blocks, each block having a plurality of pages, and each page defining an individually addressable physical memory location. The controller is further configured to accumulate a Block READ Count corresponding to the number of times any pages in a first block of pages have been read since the first block was last erased. Once the READ count reaches a predetermined number, the controller responds to subsequent READ requests for pages within the first block by moving data associated with a requested page to a page in a second, different block without moving data associated with other pages in the first block, and modifying a logical-to-physical translation table to associate the moved data with the physical address of the page in the second block.

Abstract: In one embodiment, a computer-implemented method includes determining, by a processor, after the writing of data to a non-volatile memory block, one or more delta threshold voltage shift (TVS?) values configured to track temporary changes with respect to changes in the underlying threshold voltage distributions due to retention and/or read disturb errors. One or more overall threshold voltage shift values is calculated for the data written to the non-volatile memory block, the one or more overall threshold voltage shift values being a function of the one or more TVS? values to be used when writing data to the non-volatile memory block. The one or more overall threshold voltage shift values are stored.

Abstract: In at least one embodiment, a controller of a non-volatile memory array iteratively performs a merged background management process independently of any host system's demand requests targeting the memory array. During an iteration of the merged background management process, the controller performs a read sweep by reading data from each of a plurality of page groups within the memory array and recording page group error statistics regarding errors detected by the reading for each page group, where each page group is formed of a respective set of one or more physical pages of storage in the memory array. During the iteration of the merged background management process, the controller employs the page group error statistics recorded during the read sweep in another background management function.

Abstract: Non-volatile memory block management. A method according to one embodiment includes determining a block health of at least some non-volatile memory blocks of a plurality of non-volatile memory blocks that are configured to store data. An error count margin threshold is calculated for each of the at least some non-volatile memory blocks. A determination is made as to whether the error count margin threshold of any of the at least some non-volatile memory blocks has been exceeded. A memory block management function is triggered upon determining that the error count margin threshold of any of the non-volatile memory blocks has been exceeded.

Abstract: In at least one embodiment, a read operation in a data storage system having lossy storage media includes fetching target data of the read operation from a lossy storage device into a buffer, transferring the target data from the buffer to an external controller external to the lossy storage device via a communication bus, performing error location processing on the target data during the transferring of the target data, communicating error location information regarding at least one error location to error repair logic via the communication bus, the error repair logic repairing the at least one error in the target data using the error location information, and the external controller causing the target data as repaired to be transmitted toward a destination. By deserializing the suboperations comprising the read operation, read latency can be reduced.

Abstract: In one embodiment, a method includes maintaining a first open logical erase block for user writes, maintaining a second open logical erase block for relocate writes, wherein the first and second open logical erase blocks are different logical erase blocks, receiving a first data stream having the user writes, transferring the first data stream to the first open logical erase block, receiving a second data stream having the relocate writes, and transferring the second data stream to the second open logical erase block. Other systems, methods, and computer program products are described in additional embodiments.

Abstract: According to one embodiment, a system includes a read buffer memory configured to store data to support integrated XOR reconstructed data and read-retry data and logic configured to receive data units and read command parameters used to read the data units from a non-volatile random access memory (NVRAM) device, determine which read buffers from the read buffer memory to store the data units, determine an error status for each of the data units, wherein the error status indicates whether each data unit includes errored data or error-free data, store each error-free data unit and the read command parameters to a corresponding read buffer, reject each errored data unit without affecting a corresponding read buffer, and retry to read only errored data units from the NVRAM device until each of the data units is stored in the read buffer memory.

Abstract: A Flash-based storage system, card, and/or module comprises a Flash controller configured to encrypt the data pages of a page stripe by shuffling the data pages, including loading each data page into a data shuffling buffer in a sequential order relative to other data pages in the page stripe, and thereafter unloading each data page in a non-sequential order relative to other data pages in the page stripe. The Flash controller is also configured to scramble the data pages of the page stripe by performing a bitwise logical operation on the data pages that are unloaded from the data shuffling buffer. A user key and one or more system keys are used to perform the shuffling and scrambling. The Flash controller is further configured to flush the user key by bypassing the system's backup power supply and performing an emergency system shutdown without backing up system data.

Abstract: Methods and apparatuses for reduction of read disturb errors in a memory system utilizing modified or extra memory cells.

Abstract: In at least one embodiment, a data storage system includes a non-volatile memory array including a plurality of blocks of physical memory, each including multiple pages. The data storage system further includes a controller that maintains a data structure identifying blocks of physical memory in the memory array that currently do not store valid data. The controller, responsive to receipt of a write input/output operation (IOP) specifying an address and write data, selects a particular block from among the blocks identified in the data structure prior to a dwell time threshold for the particular block being satisfied, programs a page within the selected block with the write data, and associates the address with the selected block.

Abstract: In a data storage system including a non-volatile random access memory (NVRAM) array, a page is a smallest granularity of the NVRAM array that can be accessed by read and write operations, and a memory block containing multiple pages is a smallest granularity of the NVRAM array that can be erased. Data are stored in the NVRAM array in page stripes distributed across multiple memory blocks. In response to detection of an error in a particular page of a particular block of the NVRAM array, only the particular page of the particular block is retired, such that at least two of the multiple memory blocks across which a particular one of the page stripes is distributed include differing numbers of active (non-retired) pages.

Abstract: The disclosed embodiments are directed to methods and apparatuses for providing efficient and enhanced protection of data stored in a nonvolatile memory system. The methods and apparatuses involve a system controller for a plurality of nonvolatile memory devices in the nonvolatile memory system that is capable of protecting data using two layers of data protection, including inter-card card stripes and intra-card page stripes.

Abstract: Methods and apparatuses for reduction of Read Disturb errors in a NAND FLASH memory system comprise a controller configured to organize FLASH memory devices into blocks, each block having a plurality of pages, and each page defining an individually addressable physical memory location. The controller is further configured to accumulate a Block READ Count corresponding to the number of times any pages in a first block of pages have been read since the first block was last erased. Once the READ count reaches a predetermined number, the controller responds to subsequent READ requests for pages within the first block by moving data associated with a requested page to a page in a second, different block without moving data associated with other pages in the first block, and modifying a logical-to-physical translation table to associate the moved data with the physical address of the page in the second block.

Abstract: In one embodiment, a method for managing threshold voltage shifts in Flash memory includes determining, by a processor after writing data to a Flash memory block, base threshold voltage shift (TVSBASE) value(s) configured to track permanent changes in underlying threshold voltage distributions due to cycling of the Flash memory block, determining, after the writing of data to the Flash memory block, delta threshold voltage shift (TVS?) value(s) configured to track temporary changes, with respect to changes in the underlying threshold voltage distributions due to retention and/or read disturb errors, calculating an overall threshold voltage shift (TVS) value for the data written to the Flash memory block, the overall TVS value being a function of the TVSBASE and TVS? value(s) to be used when writing data to the Flash memory block, and applying the overall TVS value to a read operation of the data stored to the Flash memory block.

Abstract: Methods and apparatuses for enhanced protection of data stored in a non-volatile memory system involve a controller capable of adapting to the failure of one or more non-volatile memory devices in the memory system. The controller stores data in the form of page stripes, each page stripe composed of data pages, and each data page stored in a different non-volatile memory device. The controller also detects failure of a non-volatile memory device in which a data page of a particular page stripe is stored, reconstructs the data page, and stores the reconstructed data page in a new page stripe, where the number of data pages in the new page stripe is less than the number of data pages in the particular page stripe, and where no page of the new page stripe is stored in a memory location within the failed non-volatile memory device.