Patents by Inventor Charles M. Lieber
Charles M. Lieber has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20080116491Abstract: Electrical devices comprised of nanoscopic wires are described, along with methods of their manufacture and use. The nanoscopic wires can be nanotubes, preferably single-walled carbon nanotubes. They can be arranged in crossbar arrays using chemically patterned surfaces for direction, via chemical vapor deposition. Chemical vapor deposition also can be used to form nanotubes in arrays in the presence of directing electric fields, optionally in combination with self-assembled monolayer patterns. Bistable devices are described.Type: ApplicationFiled: November 21, 2005Publication date: May 22, 2008Applicant: President and Fellows of Harvard CollegeInventors: Charles M. Lieber, Thomas Rueckes, Ernesto Joselevich, Kevin Kim
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Patent number: 7301199Abstract: The present invention relates generally to sub-microelectronic circuitry, and more particularly to nanometer-scale articles, including nanoscale wires which can be selectively doped at various locations and at various levels. In some cases, the articles may be single crystals. The nanoscale wires can be doped, for example, differentially along their length, or radially, and either in terms of identity of dopant, concentration of dopant, or both. This may be used to provide both n-type and p-type conductivity in a single item, or in different items in close proximity to each other, such as in a crossbar array. The fabrication and growth of such articles is described, and the arrangement of such articles to fabricate electronic, optoelectronic, or spintronic devices and components.Type: GrantFiled: July 16, 2002Date of Patent: November 27, 2007Assignee: President and Fellows of Harvard CollegeInventors: Charles M. Lieber, Xiangfeng Duan, Yi Cui, Yu Huang, Mark Gudiksen, Lincoln J. Lauhon, Jianfang Wang, Hongkun Park, Qingqiao Wei, Wenjie Liang, David C. Smith, Deli Wang, Zhaohui Zhong
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Patent number: 7274208Abstract: An apparatus and methods for a sublithographic programmable logic array (PLA) are disclosed. The apparatus allows combination of non-restoring, programmable junctions and fixed (non-programmable) restoration logic to implement any logic function or any finite-state machine. The methods disclosed teach how to integrate fixed, restoration logic at sublithographic scales along with programmable junctions. The methods further teach how to integrate addressing from the microscale so that the nanoscale crosspoint junctions can be programmed after fabrication.Type: GrantFiled: May 28, 2004Date of Patent: September 25, 2007Assignee: California Institute of TechnologyInventors: André DeHon, Michael J. Wilson, Charles M. Lieber
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Patent number: 7256466Abstract: Electrical devices comprised of nanowires are described, along with methods of their manufacture and use. The nanowires can be nanotubes and nanowires. The surface of the nanowires may be selectively functionalized. Nanodetector devices are described.Type: GrantFiled: December 15, 2004Date of Patent: August 14, 2007Assignee: President & Fellows of Harvard CollegeInventors: Charles M. Lieber, Hongkun Park, Qingqiao Wei, Yi Cui, Wenjie Liang
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Patent number: 7254151Abstract: This invention generally relates to nanotechnology and nanoelectronics as well as associated methods and devices. In particular, the invention relates to nanoscale optical components such as electroluminescence devices (e.g., LEDs), amplified stimulated emission devices (e.g., lasers), waveguides, and optical cavities (e.g., resonators). Articles and devices of a size greater than the nanoscale are also included. Such devices can be formed from nanoscale wires such as nanowires or nanotubes. In some cases, the nanoscale wire is a single crystal. In one embodiment, the nanoscale laser is constructed as a Fabry-Perot cavity, and is driven by electrical injection. Any electrical injection source may be used. For example, electrical injection may be accomplished through a crossed wire configuration, an electrode or distributed electrode configuration, or a core/shell configuration. The output wavelength can be controlled, for example, by varying the types of materials used to fabricate the device.Type: GrantFiled: December 11, 2003Date of Patent: August 7, 2007Assignee: President & Fellows of Harvard CollegeInventors: Charles M. Lieber, Xiangfeng Duan, Yu Huang, Ritesh Agarwal
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Patent number: 7211464Abstract: A bulk-doped semiconductor that is at least one of the following: a single crystal, an elongated and bulk-doped semiconductor that, at any point along its longitudinal axis, has a largest cross-sectional dimension less than 500 nanometers, and a free-standing and bulk-doped semiconductor with at least one portion having a smallest width of less than 500 nanometers. Such a semiconductor may comprise an interior core comprising a first semiconductor; and an exterior shell comprising a different material than the first semiconductor. Such a semiconductor may be elongated and may have, at any point along a longitudinal section of such a semiconductor, a ratio of the length of the section to a longest width is greater than 4:1, or greater than 10:1, or greater than 100:1, or even greater than 1000:1.Type: GrantFiled: March 17, 2005Date of Patent: May 1, 2007Assignee: President & Fellows of Harvard CollegeInventors: Charles M. Lieber, Yi Cui, Xiangfeng Duan, Yu Huang
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Patent number: 7172953Abstract: Electrical devices comprised of nanoscopic wires are described, along with methods of their manufacture and use. The nanoscopic wires can be nanotubes, preferably single-walled carbon nanotubes. They can be arranged in crossbar arrays using chemically patterned surfaces for direction, via chemical vapor deposition. Chemical vapor deposition also can be used to form nanotubes in arrays in the presence of directing electric fields, optionally in combination with self-assembled monolayer patterns. Bistable devices are described.Type: GrantFiled: December 20, 2005Date of Patent: February 6, 2007Assignee: President and Fellows of Harvard CollegeInventors: Charles M. Lieber, Thomas Rueckes, Ernesto Joselevich, Kevin Kim
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Patent number: 7129554Abstract: Electrical devices comprised of nanoscopic wires are described, along with methods of their manufacture and use. The nanoscopic wires can be nanotubes, preferably single-walled carbon nanotubes. They can be arranged in crossbar arrays using chemically patterned surfaces for direction, via chemical vapor deposition. Chemical vapor deposition also can be used to form nanotubes in arrays in the presence of directing electric fields, optionally in combination with self-assembled monolayer patterns. Bistable devices are described.Type: GrantFiled: December 11, 2001Date of Patent: October 31, 2006Assignee: President & Fellows of Harvard CollegeInventors: Charles M. Lieber, Hongkun Park, Qingqiao Wei, Yi Cui, Wenjie Liang
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Patent number: 7073157Abstract: An architecture for nanoscale electronics is disclosed. The architecture comprises arrays of crossed nanoscale wires having selectively programmable crosspoints. Nanoscale wires of one array are shared by other arrays, thus providing signal propagation between the arrays. Nanoscale signal restoration elements are also provided, allowing an output of a first array to be used as an input to a second array. Signal restoration occurs without routing of the signal to non-nanoscale wires.Type: GrantFiled: January 17, 2003Date of Patent: July 4, 2006Assignees: California Institute of Technology, President and Fellows of Harvard CollegeInventors: André DeHon, Charles M. Lieber
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Patent number: 6963077Abstract: A memory array comprising nanoscale wires is disclosed. The nanoscale wires are addressed by means of controllable regions axially and/or radially distributed along the nanoscale wires. In a one-dimensional embodiment, memory locations are defined by crossing points between nanoscale wires and microscale wires. In a two-dimensional embodiment, memory locations are defined by crossing points between perpendicular nanoscale wires. In a three-dimensional embodiment, memory locations are defined by crossing points between nanoscale wires located in different vertical layers.Type: GrantFiled: July 24, 2003Date of Patent: November 8, 2005Assignees: California Institute of Technology, President and Fellows of Harvard College, Brown University, SRI InternationalInventors: André DeHon, Charles M. Lieber, Patrick D. Lincoln, John E. Savage
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Patent number: 6900479Abstract: A method for controlling electric conduction on nanoscale wires is disclosed. The nanoscale wires are provided with controllable regions axially and/or radially distributed. Controlling those regions by means of microscale wires or additional nanoscale wires allows or prevents electric conduction on the controlled nanoscale wires. The controllable regions are of two different types. For example, a first type of controllable region can exhibit a different doping from a second type of controllable region. The method allows one or more of a set of nanoscale wires, packed at sublithographic pitch, to be independently selected.Type: GrantFiled: July 24, 2003Date of Patent: May 31, 2005Assignees: California Institute of Technology, Brown University, President and Fellows of Harvard College, SRI InternationalInventors: André DeHon, Charles M. Lieber, Patrick D. Lincoln, John E. Savage
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Publication number: 20040213307Abstract: This invention generally relates to nanotechnology and nanoelectronics as well as associated methods and devices. In particular, the invention relates to nanoscale optical components such as electroluminescence devices (e.g., LEDs), amplified stimulated emission devices (e.g., lasers), waveguides, and optical cavities (e.g., resonators). Articles and devices of a size greater than the nanoscale are also included. Such devices can be formed from nanoscale wires such as nanowires or nanotubes. In some cases, the nanoscale wire is a single crystal. In one embodiment, the nanoscale laser is constructed as a Fabry-Perot cavity, and is driven by electrical injection. Any electrical injection source may be used. For example, electrical injection may be accomplished through a crossed wire configuration, an electrode or distributed electrode configuration, or a core/shell configuration. The output wavelength can be controlled, for example, by varying the types of materials used to fabricate the device.Type: ApplicationFiled: December 11, 2003Publication date: October 28, 2004Applicant: President and Fellows of Harvard CollegeInventors: Charles M. Lieber, Xiangfeng Duan, Yu Huang, Ritesh Agarwal
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Publication number: 20040188721Abstract: Electrical devices comprised of nanoscopic wires are described, along with methods of their manufacture and use. The nanoscopic wires can be nanotubes, preferably single-walled carbon nanotubes. They can be arranged in crossbar arrays using chemically patterned surfaces for direction, via chemical vapor deposition. Chemical vapor deposition also can be used to form nanotubes in arrays in the presence of directing electric fields, optionally in combination with self-assembled monolayer patterns. Bistable devices are described.Type: ApplicationFiled: March 29, 2004Publication date: September 30, 2004Applicant: President and Fellows of Harvard UniversityInventors: Charles M. Lieber, Thomas Rueckes, Ernesto Joselevich, Kevin Kim
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Patent number: 6781166Abstract: Electrical devices comprised of nanoscopic wires are described, along with methods of their manufacture and use. The nanoscopic wires can be nanotubes, preferably single-walled carbon nanotubes. They can be arranged in crossbar arrays using chemically patterned surfaces for direction, via chemical vapor deposition. Chemical vapor deposition also can be used to form nanotubes in arrays in the presence of directing electric fields, optionally in combination with self-assembled monolayer patterns. Bistable devices are described.Type: GrantFiled: October 24, 2001Date of Patent: August 24, 2004Assignee: President & Fellows of Harvard CollegeInventors: Charles M. Lieber, Thomas Rueckes, Ernesto Joselevich, Kevin Kim
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Publication number: 20040113138Abstract: A method for controlling electric conduction on nanoscale wires is disclosed. The nanoscale wires are provided with controllable regions axially and/or radially distributed. Controlling those regions by means of microscale wires or additional nanoscale wires allows or prevents electric conduction on the controlled nanoscale wires. The controllable regions are of two different types. For example, a first type of controllable region can exhibit a different doping from a second type of controllable region. The method allows one or more of a set of nanoscale wires, packed at sublithographic pitch, to be independently selected.Type: ApplicationFiled: July 24, 2003Publication date: June 17, 2004Inventors: Andre DeHon, Charles M. Lieber, Patrick D. Lincoln, John E. Savage
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Publication number: 20040113139Abstract: A memory array comprising nanoscale wires is disclosed. The nanoscale wires are addressed by means of controllable regions axially and/or radially distributed along the nanoscale wires. In a one-dimensional embodiment, memory locations are defined by crossing points between nanoscale wires and microscale wires. In a two-dimensional embodiment, memory locations are defined by crossing points between perpendicular nanoscale wires. In a three-dimensional embodiment, memory locations are defined by crossing points between nanoscale wires located in different vertical layers.Type: ApplicationFiled: July 24, 2003Publication date: June 17, 2004Inventors: Andre DeHon, Charles M. Lieber, Patrick D. Lincoln, John E. Savage
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Patent number: 6743408Abstract: A method of producing carbon single wall nanotubes (SWNT) by CVD is disclosed. The SWNTs are grown on a metal-catalyzed support surface, such as a commercially available silicon tips for atomic force microscopes (AFM). The growth characteristics of the SWNTs can be controlled by adjusting the density of the catalyst and the CVD growth conditions. The length of the SWNTs can be adjusted through pulsed electrical etching. Nanotubes of this type can find applications in nanotubes structures with defined patterns and for nano-tweezers. Nano-tweezers may be useful for manipulating matter, such as biological material, on a molecular level.Type: GrantFiled: September 28, 2001Date of Patent: June 1, 2004Assignee: President and Fellows of Harvard CollegeInventors: Charles M. Lieber, Jason H. Hafner, Chin Li Cheung, Philip Kim
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Patent number: 6716409Abstract: A method of fabricating SWNT probes for use in atomic force microscopy is disclosed. In one embodiment, the SWNT's are fabricated using a metallic salt solution. In another embodiment, the SWNT's are fabricated using metallic colloids.Type: GrantFiled: September 18, 2001Date of Patent: April 6, 2004Assignee: President and Fellows of the Harvard CollegeInventors: Jason H. Hafner, Chin Li Cheung, Charles M. Lieber
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Publication number: 20030200521Abstract: An architecture for nanoscale electronics is disclosed. The architecture comprises arrays of crossed nanoscale wires having selectively programmable crosspoints. Nanoscale wires of one array are shared by other arrays, thus providing signal propagation between the arrays. Nanoscale signal restoration elements are also provided, allowing an output of a first array to be used as an input to a second array. Signal restoration occurs without routing of the signal to non-nanoscale wires.Type: ApplicationFiled: January 17, 2003Publication date: October 23, 2003Applicants: CALIFORNIA INSTITUTE OF TECHNOLOGY, PRESIDENT AND FELLOWS OF HARVARD COLLEGEInventors: Andre DeHon, Charles M. Lieber
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Publication number: 20030089899Abstract: The present invention relates generally to sub-microelectronic circuitry, and more particularly to nanometer-scale articles, including nanoscale wires which can be selectively doped at various locations and at various levels. In some cases, the articles may be single crystals. The nanoscale wires can be doped, for example, differentially along their length, or radially, and either in terms of identity of dopant, concentration of dopant, or both. This may be used to provide both n-type and p-type conductivity in a single item, or in different items in close proximity to each other, such as in a crossbar array. The fabrication and growth of such articles is described, and the arrangement of such articles to fabricate electronic, optoelectronic, or spintronic devices and components.Type: ApplicationFiled: July 16, 2002Publication date: May 15, 2003Inventors: Charles M. Lieber, Xiangfeng Duan, Yi Cui, Yu Huang, Mark Gudiksen, Lincoln J. Lauhon, Jianfang Wang, Hongkun Park, Qingqiao Wei, Wenjie Liang, David C. Smith, Deli Wang, Zhaohui Zhong