Abstract: A method is described for multiplexed detection of polymorphic sites and direct determination of haplotypes in DNA fragments, DNA, and genomic DNA, using single-walled carbon nanotube (SWNT) atomic force microscopy (AFM) probes. This technique has applications for haplotyping in population-based genetic disease studies and other genomic screening.

Abstract: A bulk-doped semiconductor that is at least one of the following: a single crystal, an elongated and bulk-doped semiconductor that, at any point along its longitudinal axis, has a largest cross-sectional dimension less than 500 nanometers, and a free-standing and bulk-doped semiconductor with at least one portion having a smallest width of less than 500 nanometers. Such a semiconductor may comprise an interior core comprising a first semiconductor; and an exterior shell comprising a different material than the first semiconductor. Such a semiconductor may be elongated and my have, at any point along a longitudinal section of such a semiconductor, a ratio of the length of the section to a longest width is greater than 4:1, or greater than 10:1, or greater than 100:1, or even greater than 1000:1.

Abstract: Electrical devices comprised of nanoscopic wires are described, along with methods of their manufacture and use. The nanoscopic wires can be nanotubes, preferably single-walled carbon nanotubes. They can be arranged in crossbar arrays using chemically patterned surfaces for direction, via chemical vapor deposition. Chemical vapor deposition also can be used to form nanotubes in arrays in the presence of directing electric fields, optionally in combination with self-assembled monolayer patterns. Bistable devices are described.

Abstract: A method of producing carbon single wall nanotubes (SWNT) by CVD is disclosed. The SWNTs are grown on a metal-catalyzed support surface, such as a commercially available silicon tips for atomic force microscopes (AFM). The growth characteristics of the SWNTs can be controlled by adjusting the density of the catalyst and the CVD growth conditions. The length of the SWNTs can be adjusted through pulsed electrical etching. Nanotubes of this type can find applications in nanotubes structures with defined patterns and for nano-tweezers. Nano-tweezers may be useful for manipulating matter, such as biological material, on a molecular level.

Abstract: Electrical devices comprised of nanowires are described, along with methods of their manufacture and use. The nanowires can be nanotubes and nanowires. The surface of the nanowires may be selectively functionalized. Nanodetector devices are described.

Abstract: A method of fabricating SWNT probes for use in atomic force microscopy is disclosed. In one embodiment, the SWNT's are fabricated using a metallic salt solution. In another embodiment, the SWNT's are fabricated using metallic colloids.

Abstract: A nanoscale carbide article consisting essentially of covalently bounded elements M1, M2, and C having the molar ratio M1:M2:C::1:y:x, wherein the article has an aspect ratio of between 10 and 1000 and has a shorter axis of between 1 and 40 nanometers.

Abstract: A carbon-based tip for scanning probe microscopy. The tip used in microscopy to reveal chemical characteristics of a sample includes a structure of the formula:X--(L--M).sub.nin which n is 1 to 100, X is a carbon-based nanotube, L is a linking group bonded at an end of the carbon-based nanotube, and M is a molecular probe bonded to the linking group.

Abstract: Methods of preparing metal oxide nanorods are described. The metal oxide nanorods have diameters between 1 and 200 nm and aspect ratios between 5 and 2000. The methods include the steps of generating a metal vapor in a furnace, exposing the nanorod growth substrate to the metal vapor within a growth zone in the furnace for a sufficient time to grow metal oxide nanorods on a surface of the nanorod growth substrate, removing the nanorod growth substrate from the growth zone after the sufficient time to grow metal oxide nanorods on a surface of the nanorod growth substrate, and removing the metal oxide nanorods from the furnace. The methods can be used to prepared large quantities of metal oxide nanorods.

Abstract: A process utilizing a supported metal catalyst, a volatile species source, and a carbon source has been developed to produce carbide nanorods with diameters of less than about 100 nm and aspect ratios of 10 to 1000. The volatile species source, carbon source, and supported metal catalyst can be used to produce carbide nanorods in single run, batch, and continuous reactors under relatively mild conditions. The method employs a simple catalytic process involving readily available starting materials.

Abstract: Metal oxide nanorods and composite materials containing such nanorods. The metal oxide nanorods have diameters between 1 and 200 nm and aspect ratios between 5 and 2000.

Abstract: A nitride material comprises C.sub.2 N. A method of forming a covalent carbon material includes forming an atomic nitrogen source, forming an elemental reagent source and combining the atomic nitrogen, elemental reagent to form the covalent carbon material and annealing the covalent carbon material. The elemental reagent is reactive with the atomic nitrogen of the atomic nitrogen source to form the covalent carbon material. Annealing the covalent carbon material produces the C.sub.2 N. In one embodiment, essentially all carbon nitride chemical bonds are single or double bonds.

Abstract: An atomic force microscope (AFM) has been used to machine complex patterns and to form free structural objects in thin layers of MoO.sub.3 grown on the surface of MoS.sub.2. The AFM tip can pattern lines with .ltoreq.10 nm resolution and then image the resulting structure without perturbation by controlling the applied load. Distinct MoO.sub.3 structures can also be defined by AFM machining, and furthermore, these objects can be manipulated on the MoS.sub.2 substrate surface using the AFM tip. These results suggest application to nanometer scale diffraction gratings, high-resolution lithography masks, and possibly the assembly of nanostructures with novel properties.

Abstract: A method for making a superconducting fullerine composition, includes reacting a fullerine with an alloy, and particularly reacting C.sub.60 with a binary alloy including an alkali metal or a tertiary alloy including two alkali metals in the vapor phase. Also, a Cesium-doped fullerine high T.sub.c superconducting composition has the formula Cs.sub.x C.sub.60, and particularly Cs.sub.3 C.sub.60. Also, a homogeneous bulk single phase high T.sub.c superconducting composition has the formula (Rb.sub.x K.sub.1-x).sub.3 C.sub.60.