Patents by Inventor Charles T. Black

Charles T. Black has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210094821
    Abstract: Technologies are described for methods and systems effective for etching nanostructures in a substrate. The methods may comprise depositing a patterned block copolymer on the substrate. The patterned block copolymer may include first and second polymer block domains. The methods may comprise applying a precursor to the patterned block copolymer to generate an infiltrated block copolymer. The precursor may infiltrate into the first polymer block domain and generate a material in the first polymer block domain. The methods may comprise applying a removal agent to the infiltrated block copolymer to generate a patterned material. The removal agent may be effective to remove the first and second polymer block domains from the substrate. The methods may comprise etching the substrate. The patterned material on the substrate may mask the substrate to pattern the etching. The etching may be performed under conditions to produce nanostructures in the substrate.
    Type: Application
    Filed: December 8, 2020
    Publication date: April 1, 2021
    Inventors: Charles T. BLACK, Atikur RAHMAN, Matthew EISAMAN, Ahsan ASHRAF
  • Patent number: 10882739
    Abstract: Technologies are described for methods and systems effective for etching nanostructures in a substrate. The methods may comprise depositing a patterned block copolymer on the substrate. The patterned block copolymer may include first and second polymer block domains. The methods may comprise applying a precursor to the patterned block copolymer to generate an infiltrated block copolymer. The precursor may infiltrate into the first polymer block domain and generate a material in the first polymer block domain. The methods may comprise applying a removal agent to the infiltrated block copolymer to generate a patterned material. The removal agent may be effective to remove the first and second polymer block domains from the substrate. The methods may comprise etching the substrate. The patterned material on the substrate may mask the substrate to pattern the etching. The etching may be performed under conditions to produce nanostructures in the substrate.
    Type: Grant
    Filed: September 6, 2018
    Date of Patent: January 5, 2021
    Assignee: BROOKHAVEN SCIENCE ASSOCIATES, LLC.
    Inventors: Charles T. Black, Atikur Rahman, Matthew Eisaman, Ahsan Ashraf
  • Publication number: 20200287119
    Abstract: A qubit device for use in a quantum computing environment includes a semiconductor substrate, an insulating layer disposed on at least a portion of an upper surface of the substrate, and a transition metal silicide (TMSi) heterojunction disposed on at least a portion of an upper surface of the insulating layer. The TMSi heterojunction includes a link layer and at least first and second TMSi regions coupled with the link layer. The link layer may include a normal conductor, thereby forming a superconductor-normal conductor-superconductor (SNS) junction, or a geometric constriction, thereby forming a superconductor-geometric constriction-superconductor (ScS) junction. The link layer may form at least a portion of a channel including intrinsic or doped silicon.
    Type: Application
    Filed: March 6, 2020
    Publication date: September 10, 2020
    Inventors: Charles T. Black, Mingzhao Liu
  • Patent number: 10290507
    Abstract: Technologies are described for methods and systems effective for etching nanostructures in a substrate. The methods may comprise depositing a patterned block copolymer on the substrate. The patterned block copolymer may include first and second polymer block domains. The methods may comprise applying a precursor to the patterned block copolymer to generate an infiltrated block copolymer. The precursor may infiltrate into the first polymer block domain and generate a material in the first polymer block domain. The methods may comprise applying a removal agent to the infiltrated block copolymer to generate a patterned material. The removal agent may be effective to remove the first and second polymer block domains from the substrate. The methods may comprise etching the substrate. The patterned material on the substrate may mask the substrate to pattern the etching. The etching may be performed under conditions to produce nanostructures in the substrate.
    Type: Grant
    Filed: June 13, 2014
    Date of Patent: May 14, 2019
    Assignee: BROOKHAVEN SCIENCE ASSOCIATES, LLC
    Inventors: Charles T. Black, Atikur Rahman, Matthew Eisaman, Ahsan Ashraf
  • Publication number: 20190109011
    Abstract: Technologies are described for methods and systems effective for etching nanostructures in a substrate. The methods may comprise depositing a patterned block copolymer on the substrate. The methods may comprise applying a precursor to the patterned block copolymer to generate an infiltrated block copolymer. The precursor may infiltrate into the first polymer block domain and generate a material. The methods may comprise applying a removal agent effective to remove the polymer block domains to the infiltrated block copolymer to generate a pattern of the material. The methods may comprise etching the substrate. The pattern of the material may mask the substrate to pattern the etching. The etching may be performed under conditions to produce nanostructures in the substrate. The methods may comprise removing the pattern of the material and coating the nanostructures and the surface of the substrate with a hydrophobic coating.
    Type: Application
    Filed: December 5, 2018
    Publication date: April 11, 2019
    Inventors: Antonio Checco, Benjamin M. Ocko, Atikur Rahman, Charles T. Black
  • Patent number: 10189704
    Abstract: Technologies are described for methods and systems effective for etching nanostructures in a substrate. The methods may comprise depositing a patterned block copolymer on the substrate. The methods may comprise applying a precursor to the patterned block copolymer to generate an infiltrated block copolymer. The precursor may infiltrate into the first polymer block domain and generate a material. The methods may comprise applying a removal agent effective to remove the polymer block domains to the infiltrated block copolymer to generate a pattern of the material. The methods may comprise etching the substrate. The pattern of the material may mask the substrate to pattern the etching. The etching may be performed under conditions to produce nanostructures in the substrate. The methods may comprise removing the pattern of the material and coating the nanostructures and the surface of the substrate with a hydrophobic coating.
    Type: Grant
    Filed: June 13, 2014
    Date of Patent: January 29, 2019
    Assignee: Brookhaven Science Associates, LLC
    Inventors: Antonio Checco, Charles T. Black, Atikur Rahman, Benjamin M. Ocko
  • Publication number: 20190004215
    Abstract: Technologies are described for methods and systems effective for etching nanostructures in a substrate. The methods may comprise depositing a patterned block copolymer on the substrate. The patterned block copolymer may include first and second polymer block domains. The methods may comprise applying a precursor to the patterned block copolymer to generate an infiltrated block copolymer. The precursor may infiltrate into the first polymer block domain and generate a material in the first polymer block domain. The methods may comprise applying a removal agent to the infiltrated block copolymer to generate a patterned material. The removal agent may be effective to remove the first and second polymer block domains from the substrate. The methods may comprise etching the substrate. The patterned material on the substrate may mask the substrate to pattern the etching. The etching may be performed under conditions to produce nanostructures in the substrate.
    Type: Application
    Filed: September 6, 2018
    Publication date: January 3, 2019
    Inventors: Charles T. BLACK, Atiku RAHMAN, Matthew EISAMAN, Ahsan ASHRAF
  • Patent number: 9557283
    Abstract: A nano-confinement platform that may allow improved quantification of the structural order of nanometer-scale systems. Sample-holder ‘chips’ are designed for the GTSAXS experimental geometry. The platform involves fabricated nanostructured sample holders on and in one or more corners of a substrate support where the sample material of interest is positioned at the corner of the substrate support. In an embodiment, the substrate material making up the substrate support beneath the sample-holding area is removed. A scattering x-ray sample platform includes a substrate support arranged in a parallelepiped form, having a substantially flat base and a substantially flat top surface, the top surface being substantially parallel with the base, the parallelepiped having a plurality of corners. At least one corner of the substrate support has a sample holding area formed in the top surface of the substrate support and within a predetermined distance from the corner.
    Type: Grant
    Filed: May 15, 2015
    Date of Patent: January 31, 2017
    Assignee: Brookhaven Science Associates, LLC
    Inventors: Charles T. Black, Kevin G. Yager
  • Publication number: 20160181449
    Abstract: This disclosure provides embodiments of photovoltaic devices. The devices include a light-absorbing anode comprised of an electrically conductive material having a plasmonic structure, a diffusion barrier, and a cathode. The light-absorbing anode and the cathode are separated by the diffusion barrier.
    Type: Application
    Filed: November 19, 2015
    Publication date: June 23, 2016
    Applicant: BROOKHAVEN SCIENCE ASSOCIATES, LLC
    Inventors: Charles T. Black, Matthew Sfeir
  • Publication number: 20160139302
    Abstract: Technologies are described for methods and systems effective for etching nanostructures in a substrate. The methods may comprise depositing a patterned block copolymer on the substrate. The patterned block copolymer may include first and second polymer block domains. The methods may comprise applying a precursor to the patterned block copolymer to generate an infiltrated block copolymer. The precursor may infiltrate into the first polymer block domain and generate a material in the first polymer block domain. The methods may comprise applying a removal agent to the infiltrated block copolymer to generate a patterned material. The removal agent may be effective to remove the first and second polymer block domains from the substrate. The methods may comprise etching the substrate. The patterned material on the substrate may mask the substrate to pattern the etching. The etching may be performed under conditions to produce nanostructures in the substrate.
    Type: Application
    Filed: June 13, 2014
    Publication date: May 19, 2016
    Applicant: Brookhaven Science Associates, LLC
    Inventors: Charles T. Black, Atikur Rahman, Matthew Eisaman, Ahsan Ashraf
  • Publication number: 20160137799
    Abstract: Technologies are described for methods and systems effective for etching nanostructures in a substrate. The methods may comprise depositing a patterned block copolymer on the substrate. The methods may comprise applying a precursor to the patterned block copolymer to generate an infiltrated block copolymer. The precursor may infiltrate into the first polymer block domain and generate a material. The methods may comprise applying a removal agent effective to remove the polymer block domains to the infiltrated block copolymer to generate a pattern of the material. The methods may comprise etching the substrate. The pattern of the material may mask the substrate to pattern the etching. The etching may be performed under conditions to produce nanostructures in the substrate. The methods may comprise removing the pattern of the material and coating the nanostructures and the surface of the substrate with a hydrophobic coating.
    Type: Application
    Filed: June 13, 2014
    Publication date: May 19, 2016
    Inventors: Antonio Checco, Charles T. Black, Atikur Rahman, Benjamin M. Ocko
  • Patent number: 9221957
    Abstract: Technologies are described for methods for producing a pattern of a material on a substrate. The methods may comprise receiving a patterned block copolymer on a substrate. The patterned block copolymer may include a first polymer block domain and a second polymer block domain. The method may comprise exposing the patterned block copolymer to a light effective to oxidize the first polymer block domain in the patterned block copolymer. The method may comprise applying a precursor to the block copolymer. The precursor may infuse into the oxidized first polymer block domain and generate the material. The method may comprise applying a removal agent to the block copolymer. The removal agent may be effective to remove the first polymer block domain and the second polymer block domain from the substrate, and may not be effective to remove the material in the oxidized first polymer block domain.
    Type: Grant
    Filed: December 19, 2014
    Date of Patent: December 29, 2015
    Assignee: Brookhaven Science Associates, LLC
    Inventors: Chang-Yong Nam, Jovan Kamcev, Charles T. Black, Robert Grubbs
  • Publication number: 20150330920
    Abstract: A nano-confinement platform that may allow improved quantification of the structural order of nanometer-scale systems. Sample-holder ‘chips’ are designed for the GTSAXS experimental geometry. The platform involves fabricated nanostructured sample holders on and in one or more corners of a substrate support where the sample material of interest is positioned at the corner of the substrate support. In an embodiment, the substrate material making up the substrate support beneath the sample-holding area is removed. A scattering x-ray sample platform includes a substrate support arranged in a parallelepiped form, having a substantially flat base and a substantially flat top surface, the top surface being substantially parallel with the base, the parallelepiped having a plurality of corners. At least one corner of the substrate support has a sample holding area formed in the top surface of the substrate support and within a predetermined distance from the corner.
    Type: Application
    Filed: May 15, 2015
    Publication date: November 19, 2015
    Inventors: Charles T. Black, Kevin G. Yager
  • Publication number: 20150200277
    Abstract: A method of forming a field effect transistor includes forming a source region and a drain region in a semiconductor material, forming a channel region between the source region and the drain region, forming an insulating layer over the channel region, forming a floating gate layer of electrically conducting material over the insulating layer, forming a layer of an insulating material over the floating gate layer, and forming a gate electrode overlying the layer of insulating material.
    Type: Application
    Filed: February 9, 2015
    Publication date: July 16, 2015
    Inventors: Charles T. Black, Kathryn Wilder Guarini
  • Publication number: 20150175761
    Abstract: Technologies are described for methods for producing a pattern of a material on a substrate. The methods may comprise receiving a patterned block copolymer on a substrate. The patterned block copolymer may include a first polymer block domain and a second polymer block domain. The method may comprise exposing the patterned block copolymer to a light effective to oxidize the first polymer block domain in the patterned block copolymer. The method may comprise applying a precursor to the block copolymer. The precursor may infuse into the oxidized first polymer block domain and generate the material. The method may comprise applying a removal agent to the block copolymer. The removal agent may be effective to remove the first polymer block domain and the second polymer block domain from the substrate, and may not be effective to remove the material in the oxidized first polymer block domain.
    Type: Application
    Filed: December 19, 2014
    Publication date: June 25, 2015
    Inventors: Chang-Yong Nam, Jovan Kamcev, Charles T. Black, Robert Grubbs
  • Publication number: 20150122639
    Abstract: A chemically passivated photoelectrode, having a conductive substrate, a layer of conductive oxide, preferably zinc oxide (ZnO), over the conductive substrate, and an ultrathin layer of a chemically inert semiconductor material coating the conductive oxide layer, is disclosed. The ultrathin layer of chemically inert semiconductor material, which may be less than 5 nm thick, increases the efficiency of water splitting through passivation of surface charge traps and chemical stability in harsh environments, as opposed to being photoactive. A method of manufacture and a solar cell having the photoelectrode are also disclosed.
    Type: Application
    Filed: October 31, 2014
    Publication date: May 7, 2015
    Inventors: Mingzhao Liu, Chang-Yong Nam, Charles T. Black
  • Patent number: 8987138
    Abstract: A method of making a nanoparticle array that includes replicating a dimension of a self-assembled film into a dielectric film, to form a porous dielectric film, conformally depositing a material over the said porous dielectric film, and anisotropically and selectively etching the deposited material.
    Type: Grant
    Filed: February 10, 2011
    Date of Patent: March 24, 2015
    Assignee: International Business Machines Corporation
    Inventors: Charles T. Black, Kathryn Wilder Guarini
  • Patent number: 8802047
    Abstract: One-dimensional materials are prepared from an array of nanoparticles positioned in one or more recesses of a substrate, wherein the recesses and the positioned nanoparticles have a comparable diameter of the same order of magnitude such that one nanoparticle is positioned within each of the one or more recesses; wherein a depth of the one or more recesses is from 10 nm to 40 nm; and wherein a diameter of the one or more recesses is adjusted by conformal film deposition and is between one and two times the mean diameter of the nanoparticles, and wherein the nanoparticles have a mean diameter of from 1 nm to 50 nm, and wherein the nanoparticles are catalytic sites for the growth of the one-dimensional materials; wherein the one dimensional materials are non-aggregated and extend in a direction that is perpendicular or approximately perpendicular to the horizontal surface of the substrate.
    Type: Grant
    Filed: May 13, 2013
    Date of Patent: August 12, 2014
    Assignee: International Business Machines Corporation
    Inventors: Charles T. Black, Christopher B. Murray, Robert L. Sandstrom
  • Publication number: 20140216539
    Abstract: Structures useful for forming contacts to materials having low charge carrier mobility are described. Methods for their formation and use are also described. These structures include interdigitated electrodes capable of making electrical contact to semiconducting materials having low electron and/or whole mobility. In particular, these structures are useful for organic semiconducting devices made with conducting polymers and small molecules. They are also useful for semiconducting devices made with nanocrystalline semiconductors.
    Type: Application
    Filed: April 27, 2012
    Publication date: August 7, 2014
    Applicant: BROOKHAVEN SCIENCE ASSOCIATES, LLC
    Inventors: Danvers E. Johnston, Jonathan E. Allen, Charles T. Black, Chang-Yong Nam
  • Publication number: 20140096483
    Abstract: A transfer chamber is disclosed having a first plate with a first surface configured to receive a sample and a second surface containing a groove. The second surface of the first plate surrounds the first surface of the first plate. A second plate has a first surface and a second surface containing a groove. A sealing component is disposed in the groove of the first plate or the second plate. A pivotable link couples the first plate and the second plate. The pivotable link is configured to hold the first plate, the second plate, and the sealing component together to substantially create an air-tight seal between the first surface of the first plate and the second surface of the second plate. The pivotable link is configured to open the seal in response to a pressure differential across the transfer chamber.
    Type: Application
    Filed: October 4, 2013
    Publication date: April 10, 2014
    Applicant: Brookhaven Science Associates, LLC
    Inventors: Danvers E. Johnston, Jonathan E. Allen, Edward Baker, Charles T. Black, Chang-Yong Nam