Abstract: A system for loading workpieces into a process chamber for processing in a matrix configuration includes a conveyor configured to transport multiple workpieces in a linear fashion. A workpiece hotel is configured to receive the multiple workpieces from the conveyor. The workpiece hotel comprises a matrix of cells arranged in N columns and M floors. A pick blade is configured to insert into the hotel and retract from the hotel in order to unload a plurality of substrates from a first floor into a single row of the pick blade, and to repeat the unloading operation to form a matrix comprising a plurality of rows of substrates disposed on the pick blade. In one example, the workpiece hotel has a staggered configuration that provides individual accessibility of each hotel cell.

Abstract: A carrier capable of holding one or more workpieces is disclosed. The carrier includes movable projections located along the sides of each cell in the carrier. This carrier, in conjunction with a separate alignment apparatus, aligns each workpiece within its respective cell against several alignment pins, using a multiple step alignment process to guarantee proper positioning of the workpiece in the cell. First, the workpieces are moved toward one side of the cell. Once the workpieces have been aligned against this side, the workpieces are then moved toward an adjacent orthogonal side such that the workpieces are aligned to two sides of the cell. Once aligned, the workpiece is held in place by the projections located along each side of each cell. In addition, the alignment pins are also used to align the associated mask, thereby guaranteeing that the mask is properly aligned to the workpiece.

Abstract: A system and method for the handling of workpieces in a workpiece processing system is disclosed. The system utilizes three conveyor belts, where one may be a loading belt, feeding unprocessed workpieces from its associated workpiece carrier to a processing system. A second conveyor belt may be an unloading belt, receiving processed workpieces from the processing system and filling its associated workpiece carrier. The third conveyor belt may be exchanging its workpiece carrier during this time, so that it is available to start operating as the loading belt once all of the workpieces have been removed from the workpiece carrier associated with the first conveyor belt.

Abstract: An improved method of moving a mask to perform a pattern implant of a substrate is disclosed. The mask has a plurality of apertures, and is placed between the ion source and the substrate. After the substrate is exposed to the ion beam, the mask is indexed to a new position relative to the substrate and a subsequent implant step is performed. Through the selection of the aperture size and shape, the index distance and the number of implant steps, a variety of implant patterns may be created. In some embodiments, the implant pattern includes heavily doped horizontal stripes with lighter doped regions between the stripes. In some embodiments, the implant pattern includes a grid of heavily doped regions. In other embodiments, the implant pattern is suitable for use with a bus-bar structure.

Abstract: A system and method for receiving unprocessed workpieces, moving them, orienting them and placing them in a load lock, or other end point is disclosed. The system includes a gantry module for moving workpieces from a conveyor system to a swap module. The swap module is used to remove a carrier or matrix of processed workpieces from a load lock and place a carrier of matrix of unprocessed workpieces in its place. The processed workpieces are then moved by the gantry module back to the conveyor. The gantry module may have X, Y, Z and rotational actuators and include an end effector having multiple grippers. A method of aligning a plurality of workpieces on the end effector so that the plurality can be transported at the same time is also disclosed.

Abstract: This apparatus has two mask segments. Each mask segment has apertures that an ion beam may pass through. These mask segments can move between a first and second position using hinges. One or more workpieces are disposed behind the mask segments when these mask segments are in a second position. The two mask segments are configured to cover the one or more workpieces in one instance. Ions are implanted into the one or more workpieces through the apertures in the mask segments.

Abstract: An alignment device has a carriage, two rails on the carriage that are configured for a workpiece to pass therebetween, and a finger that protrudes a distance from the carriage. The finger is configured to be disposed on a carrier for the workpieces. The workpieces may be solar cells and may pass through the rails on a conveyor belt. The alignment device may move in order to align the workpieces as the workpieces are loaded into a carrier.

Abstract: An improved method of moving a mask to perform a pattern implant of a substrate is disclosed. The mask has a plurality of apertures, and is placed between the ion source and the substrate. After the substrate is exposed to the ion beam, the mask is indexed to a new position relative to the substrate and a subsequent implant step is performed. Through the selection of the aperture size and shape, the index distance and the number of implant steps, a variety of implant patterns may be created. In some embodiments, the implant pattern includes heavily doped horizontal stripes with lighter doped regions between the stripes. In some embodiments, the implant pattern includes a grid of heavily doped regions. In other embodiments, the implant pattern is suitable for use with a bus-bar structure.

Abstract: An improved method of moving a mask to perform a pattern implant of a substrate is disclosed. The mask has a plurality of apertures, and is placed between the ion source and the substrate. After the substrate is exposed to the ion beam, the mask is indexed to a new position relative to the substrate and a subsequent implant step is performed. Through the selection of the aperture size and shape, the index distance and the number of implant steps, a variety of implant patterns may be created. In some embodiments, the implant pattern includes heavily doped horizontal stripes with lighter doped regions between the stripes. In some embodiments, the implant pattern includes a grid of heavily doped regions. In other embodiments, the implant pattern is suitable for use with a bus-bar structure.

Abstract: A masking apparatus includes a mask positioned upstream of a target positioned for treatment with ions. The mask is sized relative to the target to cause a first half of the target to be treated with a selective treatment of ions through the mask and a second half of the target to be treated with a blanket treatment of ions unimpeded by the mask during a first time interval. The masking apparatus also includes a positioning mechanism to change a relative position of the mask and the target so that the second half of the target is treated with the selective treatment of ions and the first half of the target is treated with the blanket implant during a second time interval. An ion implanter having the masking apparatus is also provided.

Abstract: An improved method of moving a mask to perform a pattern implant of a substrate is disclosed. The mask has a plurality of apertures, and is placed between the ion source and the substrate. After the substrate is exposed to the ion beam, the mask is indexed to a new position relative to the substrate and a subsequent implant step is performed. Through the selection of the aperture size and shape, the index distance and the number of implant steps, a variety of implant patterns may be created. In some embodiments, the implant pattern includes heavily doped horizontal stripes with lighter doped regions between the stripes. In some embodiments, the implant pattern includes a grid of heavily doped regions. In other embodiments, the implant pattern is suitable for use with a bus-bar structure.

Abstract: A system for loading workpieces into a process chamber for processing in a matrix configuration includes a conveyor configured to transport multiple workpieces in a linear fashion. A workpiece hotel is configured to receive the multiple workpieces from the conveyor. The workpiece hotel comprises a matrix of cells arranged in N columns and M floors. A pick blade is configured to insert into the hotel and retract from the hotel in order to unload a plurality of substrates from a first floor into a single row of the pick blade, and to repeat the unloading operation to form a matrix comprising a plurality of rows of substrates disposed on the pick blade. In one example, the workpiece hotel has a staggered configuration that provides individual accessibility of each hotel cell.

Abstract: A workpiece handling system includes a process chamber configured to support a workpiece for ion implantation, a first mask stored outside the process chamber in a mask station, and a robot system configured to retrieve the first mask from the mask station, and position the first mask upstream of the workpiece so the workpiece receives a first selective implant through the first mask. A method includes storing a first mask outside a process chamber in a mask station, retrieving the first mask from the mask station, positioning the first mask upstream of a workpiece positioned in the process chamber for ion implantation, and performing a first selective implant through the first mask.

Abstract: This apparatus has two mask segments. Each mask segment has apertures that an ion beam may pass through. These mask segments can move between a first and second position using hinges. One or more workpieces are disposed behind the mask segments when these mask segments are in a second position. The two mask segments are configured to cover the one or more workpieces in one instance. Ions are implanted into the one or more workpieces through the apertures in the mask segments.

Abstract: A masking apparatus includes a mask positioned upstream of a target positioned for treatment with ions. The mask is sized relative to the target to cause a first half of the target to be treated with a selective treatment of ions through the mask and a second half of the target to be treated with a blanket treatment of ions unimpeded by the mask during a first time interval. The masking apparatus also includes a positioning mechanism to change a relative position of the mask and the target so that the second half of the target is treated with the selective treatment of ions and the first half of the target is treated with the blanket implant during a second time interval. An ion implanter having the masking apparatus is also provided.