Abstract: A method and a computer system for designing an optical photomask for forming a prepattern opening in a photoresist layer on a substrate wherein the photoresist layer and the prepattern opening are coated with a self-assembly material that undergoes directed self-assembly to form a directed self-assembly pattern. The methods includes: generating a mask design shape from a target design shape; generating a sub-resolution assist feature design shape based on the mask design shape; using a computer to generate a prepattern shape based on the sub-resolution assist feature design shape; and using a computer to evaluate if a directed self-assembly pattern of the self-assembly material based on the prepattern shape is within specified ranges of dimensional and positional targets of the target design shape on the substrate.

Abstract: A method and a computer system for designing an optical photomask for forming a prepattern opening in a photoresist layer on a substrate wherein the photoresist layer and the prepattern opening are coated with a self-assembly material that undergoes directed self-assembly to form a directed self-assembly pattern. The methods includes: generating a mask design shape from a target design shape; generating a sub-resolution assist feature design shape based on the mask design shape; using a computer to generate a prepattern shape based on the sub-resolution assist feature design shape; and using a computer to evaluate if a directed self-assembly pattern of the self-assembly material based on the prepattern shape is within specified ranges of dimensional and positional targets of the target design shape on the substrate.

Abstract: Methods are disclosed for forming a layered structure comprising a self-assembled material. A method comprises disposing a photoresist layer comprising a non-crosslinking, positive-tone photoresist on a surface of a substrate; optionally baking the photoresist layer; pattern-wise exposing the photoresist layer to first radiation; optionally baking the exposed photoresist layer; developing the exposed photoresist layer with an aqueous alkaline developer to form an initial patterned photoresist layer. The initial patterned photoresist layer is treated photochemically, thermally, and/or chemically to form a treated patterned photoresist layer comprising non-crosslinked treated photoresist, wherein the treated photoresist is insoluble in a given organic solvent suitable for casting a given material capable of self-assembly, and the treated photoresist is soluble in the aqueous alkaline developer and/or a second organic solvent.

Abstract: A memory device utilizes a phase change material as the storage medium. The phase change material includes at least one of Ge, Sb, Te, Se, As, and S, as well as a nitride compound as a dopant. The memory device can be a solid-state memory cell with electrodes in electrical communication with the phase change medium, an optical phase change storage device in which data is read and written optically, or a storage device based on the principle of scanning probe microscopy.

Abstract: A memory device utilizes a phase change material as the storage medium. The phase change material includes at least one of Ge, Sb, Te, Se, As, and S, as well as a nitride compound as a dopant. The memory device can be a solid-state memory cell with electrodes in electrical communication with the phase change medium, an optical phase change storage device in which data is read and written optically, or a storage device based on the principle of scanning probe microscopy.

Abstract: Magnetic medium recording performance can be enhanced by irradiating a magnetic medium with ions having an acceleration voltage of between 10 keV and 100 keV to induce exchange coupling between grains of the magnetic medium. The magnetic medium is exposed to a cumulative ion dosage of between 1013 ions/cm2 and 1017 ions/cm2 using a non-patterned exposure of the magnetic medium. The ions can be selected from the group consisting of H+, He+, Ne+, Ar+, Kr+, and Xe+. Alternatively, the ions can be selected from the group consisting of Ga+, Hg+, and In+.

Abstract: Magnetic medium recording performance can be enhanced by irradiating a magnetic medium with ions having an acceleration voltage of between 10 keV and 100 keV to induce exchange coupling between grains of the magnetic medium. The magnetic medium is exposed to a cumulative ion dosage of between 1013 ions/cm2 and 1017 ions/cm2 using a non-patterned exposure of the magnetic medium. The ions can be selected from the group consisting of H+, He+, Ne+, Ar+, Kr+, and Xe+. Alternatively, the ions can be selected from the group consisting of Ga+, Hg+, and In+.

Abstract: A method and associated structure. A substrate is provided. The substrate has an energetically neutral corrugated surface layer. A film is formed on the corrugated surface layer. The film includes a combination of a di-block copolymer and a stiffening compound. The di-block copolymer includes lamellar microdomains of a first polymer block and lamellar microdomains of a second polymer block. The stiffening compound is dissolved within the first polymer block. At least one lamellar microdomain is removed from the film such that an oriented structure remains on the surface layer.

Abstract: A memory device utilizes a phase change material as the storage medium. The phase change material includes at least one of Ge, Sb, Te, Se, As, and S, as well as a nitride compound as a dopant. The memory device can be a solid-state memory cell with electrodes in electrical communication with the phase change medium, an optical phase change storage device in which data is read and written optically, or a storage device based on the principle of scanning probe microscopy.

Abstract: An electric field is applied below a resist to reduce proximity effects associated with electron beam scattering, thereby improving the resolution of features or lines written into the resist. Although the electrons in the electron beam can be very energetic (e.g., >>10 keV), it is shown that even a small electric field can reduce the number of electrons that re-enter the resist material after being scattered in the substrate, and thus reduce the energy deposited in the resist from these electrons. One advantage of this technique is that high potentials and high fields are not required. Accordingly, the methods described can be applied to existing tooling with little modification to the electron beam system.

Abstract: A scanning-aperture electron microscope system and method in which a radiation source generates a radiation beam that is incident upon a surface of a sample material causing electrons to be ejected from the surface. When magnetic imaging is being performed, a polarization rotator polarization-modulates the radiation beam. A scanning-aperture probe having an aperture is positioned in proxiity to the surface of the sample material so that photoelectrons ejected from the surface of the sample material pass through the aperture. A detector detects the electrons passing through the aperture. The electron detector outputs a signal in response to the detected electrons that is used for imaging magnetic and/or spectroscopic features of the surface of the sample material. The resolution of the imaged features is about equal to a size of the aperture.