Abstract: A method of producing a molded semiconductor package includes: attaching a first load terminal at a first side of a semiconductor die to a leadframe, the semiconductor die having a second load terminal at a second side opposite the first side and a control terminal at the first side or the second side; encapsulating the semiconductor die in a laser-activatable mold compound so that the leadframe is at least partly exposed from the laser-activatable mold compound at a first side of the molded semiconductor package, and the second load terminal is at least partly exposed from the laser-activatable mold compound at a second side of the molded semiconductor package opposite the first side; and laser activating a first region of the laser-activatable mold compound to form a first laser-activated region that is electrically conductive.

Abstract: A method of producing a molded semiconductor package includes: attaching a first load terminal at a first side of a semiconductor die to a leadframe, the semiconductor die having a second load terminal at a second side opposite the first side and a control terminal at the first side or the second side; encapsulating the semiconductor die in a laser-activatable mold compound so that the leadframe is at least partly exposed from the laser-activatable mold compound at a first side of the molded semiconductor package, and the second load terminal is at least partly exposed from the laser-activatable mold compound at a second side of the molded semiconductor package opposite the first side; and laser activating a first region of the laser-activatable mold compound to form a first laser-activated region which forms part of an electrical connection to the second load terminal.

Abstract: A method of producing a molded semiconductor package includes: attaching a first load terminal at a first side of a semiconductor die to a leadframe, the semiconductor die having a second load terminal at a second side opposite the first side and a control terminal at the first side or the second side; encapsulating the semiconductor die in a laser-activatable mold compound so that the leadframe is at least partly exposed from the laser-activatable mold compound at a first side of the molded semiconductor package, and the second load terminal is at least partly exposed from the laser-activatable mold compound at a second side of the molded semiconductor package opposite the first side; and laser activating a first region of the laser-activatable mold compound to form a first laser-activated region which forms part of an electrical connection to the second load terminal.

Abstract: A packaged semiconductor includes an electrically insulating encapsulant body having an upper surface, a first semiconductor die encapsulated within the encapsulant body, the first semiconductor die having a main surface with a first conductive pad that faces the upper surface of the encapsulant body, a second semiconductor die encapsulated within the encapsulant body and disposed laterally side by side with the first semiconductor die, the second semiconductor die having a main surface with a second conductive pad that faces the upper surface of the encapsulant body, and a first conductive track that is formed in the upper surface of the encapsulant body and electrically connects the first conductive pad to the second conductive pad. The encapsulant body includes a laser activatable mold compound.

Abstract: A semiconductor package includes an electrically insulating first encapsulant body having an upper surface, a first semiconductor die encapsulated within the first encapsulant body, the first semiconductor die having a main surface with a first conductive pad that faces the upper surface of the first encapsulant body, a plurality of electrically conductive leads, each of the leads having interior ends that are encapsulated within the first encapsulant body and outer ends that are exposed from the first encapsulant body, and a first direct electrical connection between the first conductive pad and the interior end of a first lead from the plurality. The first direct electrical connection includes a first conductive track formed in the upper surface of the first encapsulant body. The first encapsulant body includes a laser activatable mold compound. The first conductive track is formed in a first laser activated region of the laser activatable mold compound.

Abstract: A semiconductor package includes an electrically insulating first encapsulant body having an upper surface, a first semiconductor die encapsulated within the first encapsulant body, the first semiconductor die having a main surface with a first conductive pad that faces the upper surface of the first encapsulant body, a plurality of electrically conductive leads, each of the leads having interior ends that are encapsulated within the first encapsulant body and outer ends that are exposed from the first encapsulant body, and a first direct electrical connection between the first conductive pad and the interior end of a first lead from the plurality. The first direct electrical connection includes a first conductive track formed in the upper surface of the first encapsulant body. The first encapsulant body includes a laser activatable mold compound. The first conductive track is formed in a first laser activated region of the laser activatable mold compound.

Abstract: Embodiments of chip-package and corresponding methods of manufacture are provided. In an embodiment of a chip-package, the chip-package includes: a carrier having a first side and a second side opposing the first side; a first chip coupled to the first side of the carrier; a second chip coupled to the second side of the carrier; an encapsulation with a first portion, which at least partially encloses the first chip on the first side of the carrier, and a second portion, which at least partially encloses the second chip on the second side of the carrier; a via extending through the first portion of the encapsulation, the carrier and the second portion of the encapsulation; and an electrically conductive material at least partly covering a sidewall of the via in the first portion or the second portion of the encapsulation, to electrically contact the carrier at either side.

Abstract: Embodiments of molded packages and corresponding methods of manufacture are provided. In an embodiment of a molded package, the molded package includes a laser-activatable mold compound having a plurality of laser-activated regions which are plated with an electrically conductive material to form metal pads and/or metal traces at a first side of the laser-activatable mold compound. A semiconductor die embedded in the laser-activatable mold compound has a plurality of die pads. An interconnect electrically connects the plurality of die pads of the semiconductor die to the metal pads and/or metal traces at the first side of the laser-activatable mold compound.

Abstract: An apparatus for molding a physical body comprising at least two mold materials, wherein the apparatus comprises a first mold tool and a second mold tool configured for defining a mold volume in between in which the physical body is moldable by supplying the at least two mold materials, and a supply unit configured for separately supplying the at least two mold materials to the mold volume, wherein at least part of at least one of the first mold tool and the second mold tool is movable to thereby increase the dimension of the mold volume after having supplied the first mold material to the mold volume and before and/or during supplying the second mold material to the mold volume.

Abstract: A device includes: a first sidewall including a first opening extending through the first sidewall; a first sensor attached to an interior surface of the first sidewall, wherein the first sensor is aligned to at least partially cover the first opening; a second sidewall opposite the first sidewall; a third sidewall attaching the first sidewall to the second sidewall; and a first contact pad disposed on an exterior surface of the third sidewall, wherein the first contact pad is configured to provide at least one of a power connection or a signal connection for the first sensor.

Abstract: A device includes: a first sidewall including a first opening extending through the first sidewall; a first sensor attached to an interior surface of the first sidewall, wherein the first sensor is aligned to at least partially cover the first opening; a second sidewall opposite the first sidewall; a third sidewall attaching the first sidewall to the second sidewall; and a first contact pad disposed on an exterior surface of the third sidewall, wherein the first contact pad is configured to provide at least one of a power connection or a signal connection for the first sensor.

Abstract: A device includes: a first sidewall including a first opening extending through the first sidewall; a first sensor attached to an interior surface of the first sidewall, wherein the first sensor is aligned to at least partially cover the first opening; a second sidewall opposite the first sidewall; a third sidewall attaching the first sidewall to the second sidewall; and a first contact pad disposed on an exterior surface of the third sidewall, wherein the first contact pad is configured to provide at least one of a power connection or a signal connection for the first sensor.

Abstract: In an embodiment, a leadframe includes a first electrically conductive part and a second electrically conductive part, each having an outer surface arranged to provide substantially coplanar outer contact areas having a footprint and an inner surface opposing the outer surface, the first part being spaced apart from the second part by a gap, a first recess arranged in the inner surface of the first part, a second recess arranged in the inner surface of the second part, and a first electrically conductive insert that is arranged in, and extends between, the first recess and the second recess and bridges the gap between the first part and the second part.

Abstract: An embodiment device includes a body structure having an interior cavity, a control chip disposed on a first interior surface of the interior cavity, and a sensor attached, at a first side, to a second interior surface of the interior cavity opposite the first interior surface. The sensor has a mounting pad on a second side of the sensor that faces the first interior surface, and the sensor is vertically spaced apart from the control chip by an air gap, with the sensor is aligned at least partially over the control chip. The device further includes an interconnect having a first end mounted on the mounting pad, the interconnect extending through the interior cavity toward the first interior surface, and the control chip is in electrical communication with the sensor by way of the interconnect.

Abstract: A semiconductor package includes a semiconductor die having a sensor structure disposed at a first side of the semiconductor die, and a first port extending through the semiconductor die from the first side to a second side of the semiconductor die opposite the first side, so as to provide a link to the outside environment. Corresponding methods of manufacture are also provided.

Abstract: An embodiment device includes a body structure having an interior cavity, a control chip disposed on a first interior surface of the interior cavity, and a sensor attached, at a first side, to a second interior surface of the interior cavity opposite the first interior surface. The sensor has a mounting pad on a second side of the sensor that faces the first interior surface, and the sensor is vertically spaced apart from the control chip by an air gap, with the sensor is aligned at least partially over the control chip. The device further includes an interconnect having a first end mounted on the mounting pad, the interconnect extending through the interior cavity toward the first interior surface, and the control chip is in electrical communication with the sensor by way of the interconnect.

Abstract: A method of fabricating a semiconductor package comprises providing a carrier, fabricating an opening in the carrier, attaching a semiconductor chip to the carrier and fabricating an encapsulation body covering the semiconductor chip.

Abstract: A method of manufacturing a package, comprising embedding the semiconductor chip with an encapsulant comprising a transition metal in a concentration in a range between 10 ppm and 10,000 ppm; selectively converting of a part of the transition metal, such that the electrical conductivity of the encapsulant increases; and plating the converted part of the encapsulant with an electrically conductive material.

Abstract: A package which comprises a first encapsulant configured so that electrically conductive material is plateable thereon, and a second encapsulant configured so that electrically conductive material is not plateable thereon.

Abstract: A semiconductor package includes a plurality of half bridge assemblies each including a metal lead, a first power transistor die attached to a first side of the metal lead, and a second power transistor die disposed under the first power transistor die and attached to a second side of the metal lead opposite the first side. Each metal lead has a notch which exposes one or more bond pads at a side of the second power transistor die attached to the metal lead. The semiconductor package also includes a controller die configured to control the power transistor dies. Each power transistor die, each metal lead and the controller die are embedded in a mold compound. Bond wire connections are provided between the controller die and the one or more bond pads at the side of each second power transistor die exposed by the notch in the corresponding metal lead.