Abstract: A container for containing food or liquid is provided. The container includes a body portion, a lid and an attachment. The lid is detachably disposed on the body portion. The attachment is configured to be disposed on the lid or the body portion and includes a magnetic attraction member and a connecting structure. The magnetic attraction member is adapted to be magnetically connected to a mobile electronic device. The connecting structure is disposed between the magnetic attraction member and the container for selectively fixing the magnetic attraction member at a first position or a second position. The connecting structure includes a fastening member, and the fastening member is adapted to be detachably fastened to the body portion or the lid.

Abstract: An optical element driving mechanism is provided. The optical element driving mechanism includes a movable portion, a fixed portion, and a driving assembly. The movable portion is used to connect the optical element. The movable portion may move relative to the fixed portion. The driving assembly is used to drive the movable portion to move relative to the fixed portion.

Abstract: A container for containing food or liquid is provided. The container includes a body portion, a lid and an attachment. The lid is detachably disposed on the body portion. The attachment includes a magnetic attraction member and a connecting structure. The magnetic attraction member is independent from the lid and adapted to be magnetically connected to a mobile electronic device. The connecting structure is disposed between the magnetic attraction member and the container for selectively fixing the magnetic attraction member at a first position or a second position. At least a portion of the connecting structure is fixed to the container.

Abstract: An optical element driving mechanism is provided. The optical element driving mechanism includes a movable portion, a fixed portion, and a driving assembly. The movable portion is used to connect the optical element. The movable portion may move relative to the fixed portion. The driving assembly is used to drive the movable portion to move relative to the fixed portion.

Abstract: An optical element driving mechanism is provided. The optical element driving mechanism includes a movable portion, a fixed portion, and a driving assembly. The movable portion is used to connect the optical element. The movable portion may move relative to the fixed portion. The driving assembly is used to drive the movable portion to move relative to the fixed portion.

Abstract: An optical element driving mechanism is provided. The optical element driving mechanism includes a movable portion, a fixed portion, and a driving assembly. The movable portion is used to connect the optical element. The movable portion may move relative to the fixed portion. The driving assembly is used to drive the movable portion to move relative to the fixed portion.

Abstract: An optical element driving mechanism is provided. The optical element driving mechanism includes a movable portion, a fixed portion, and a driving assembly. The movable portion is used to connect the optical element. The movable portion may move relative to the fixed portion. The driving assembly is used to drive the movable portion to move relative to the fixed portion.

Abstract: A method for forming a semiconductor device structure is provided. The method includes forming an isolation layer over a substrate. The method includes forming a spacer layer over the first fin, the second fin, and the isolation layer. The method includes forming a gate dielectric layer in the first trench and covering the first fin, the second fin, and the isolation layer exposed by the first trench. The method includes partially removing the gate dielectric layer to form a second trench in the gate dielectric layer and between the first fin and the second fin. The method includes forming a gate electrode in the first trench of the spacer layer and over the gate dielectric layer.

Abstract: The present disclosure provides a method of manufacturing a semiconductor device. The method includes: forming a semiconductor layer stack on a metal layer, in which the semiconductor layer stack includes a first nitride layer, a first oxide layer, a second nitride layer, a second oxide layer, and a third nitride layer; forming a mask layer on the semiconductor layer stack, in which the mask layer includes a plurality of hollowed portions; depositing a thin silicon layer on inner walls of the hollowed portions; and forming a plurality of trenches in the semiconductor layer stack by the hollowed portions.

Abstract: An IC structure and a method of forming the same are provided. In an embodiment, an exemplary method of forming the IC structure forming a first semiconductor fin and a second semiconductor fin protruding from a substrate, forming a high-k metal gate (HKMG) structure over the first semiconductor fin and the second semiconductor fin, forming a trench to separate the HKMG structure into two portions, conformally depositing a first dielectric layer in the trench, depositing a second dielectric layer over the first dielectric layer to fill the trench, wherein the second dielectric layer includes nitrogen, and the first dielectric layer is free of nitrogen, and planarizing the first dielectric layer and second dielectric layer to form a gate isolation structure in the trench.

Abstract: An optical system affixed to an electronic apparatus is provided, including a first optical module, a second optical module, and a third optical module. The first optical module is configured to adjust the moving direction of a first light from a first moving direction to a second moving direction, wherein the first moving direction is not parallel to the second moving direction. The second optical module is configured to receive the first light moving in the second moving direction. The first light reaches the third optical module via the first optical module and the second optical module in sequence. The third optical module includes a first photoelectric converter configured to transform the first light into a first image signal.

Abstract: A transistor includes a first semiconductor layer, a second semiconductor layer, a semiconductor nanosheet, a gate electrode and source and drain electrodes. The semiconductor nanosheet is physically connected to the first semiconductor layer and the second semiconductor layer. The gate electrode wraps around the semiconductor nanosheet. The source and drain electrodes are disposed at opposite sides of the gate electrode. The first semiconductor layer surrounds the source electrode, the second semiconductor layer surrounds the drain electrode, and the semiconductor nanosheet is disposed between the source and drain electrodes.

Abstract: The present invention relates to a master cylinder arrangement for a brake system, comprising a tandem master cylinder including a master cylinder housing, a first master piston movably arranged in the master cylinder housing, a second master piston movably arranged in the master cylinder housing, a balancing piston movably arranged in the second master piston, and an elastic pedal feel element. The invention further relates to a hydraulic system for a brake system as well as a brake system.

Abstract: A semiconductor device includes a semiconductor substrate having a first lattice constant, a dopant blocking layer disposed over the semiconductor substrate, the dopant blocking layer having a second lattice constant different from the first lattice constant, and a buffer layer disposed over the dopant blocking layer, the buffer layer having a third lattice constant different from the second lattice constant. The semiconductor device also includes a plurality of channel members suspended over the buffer layer, an epitaxial feature abutting the channel members, and a gate structure wrapping each of the channel members.

Abstract: A semiconductor device and method of forming the same are disclosed. The semiconductor device includes a fin structure, a gate electrode, a source-drain region, a plug and a hard mask structure. The gate electrode crosses over the fin structure. The source-drain region in the fin structure is aside the gate electrode. The plug is disposed over and electrically connected to the gate electrode. The hard mask structure surrounds the plug and is disposed over the gate electrode, wherein the hard mask structure includes a first hard mask layer and a second hard mask layer, the second hard mask layer covers a sidewall and a top surface of the first hard mask layer, and a material of the first hard mask layer is different from a material of the second hard mask layer.

Abstract: Disclosed is an electronic device having a display region and a peripheral region adjacent to the display region. The electronic device includes a first electrode disposed in the display region, a second electrode disposed in the display region, a circuit module disposed in the peripheral region, a first electrical trace, and a second electrical trace electrically insulated from the first electrical trace. The circuit module is electrically connected to the first electrode through the first electrical trace and provides a first driving voltage to the first electrical trace. The circuit module is electrically connected to the second electrode through the second electrical trace and provides a second driving voltage to the second electrical trace, and the first driving voltage is different from the second driving voltage. In a top view, the first electrical trace at least partially overlaps the second electrical trace.

Abstract: A method for forming a semiconductor structure is provided. The method for forming the semiconductor structure includes forming first fin structures and a second fin structures over a substrate, forming a first gate stack and a second gate stack that extend in a first direction across the first fin structures and the second fin structures, respectively, and etching the first gate stack and the second gate stack to form a first trench through the first gate stack and a second trench through the second gate stack. A first dimension of the first trench in the first direction is greater than a second dimension of the second trench in the first direction. The method further includes forming a first gate cutting structure and a second gate cutting structure in the first trench and the second trench, respectively.

Abstract: A brake system comprises a reservoir; a brake pedal; a master cylinder including a first master chamber, a second master chamber, a first master piston, and a second master piston; a first hydraulic circuit including at least one first hydraulic wheel brake; a second hydraulic circuit including at least one second hydraulic wheel brake; and a hydraulic pressure supplier including an actuator for pressurizing the first hydraulic circuit and the second hydraulic circuit depending on an operation of the brake pedal in a normal operating mode. The master cylinder further comprises a locking chamber and an elastic pedal feel element arranged in the first master chamber to be in contact with the first master piston and the second master piston for generating a pedal force when the brake pedal is operated while the second master piston is locked in the normal operating mode.

Abstract: A method of forming semiconductor structure includes forming a dielectric stack over a substrate. A mask layer is formed over the dielectric stack. A first opening is formed in the mask layer to expose dielectric stack. A second opening is formed in the dielectric stack to expose the substrate, wherein the second opening is communicated with the first opening. A fill layer is formed in the first opening and the second opening. The mask layer and the fill layer are removed such that sidewalls of the dielectric stack are exposed. A capacitor is formed in the second opening of the dielectric stack.

Abstract: Semiconductor structures and methods are provided. An exemplary method according to the present disclosure includes receiving a workpiece including a first semiconductor fin and a second semiconductor fin penetrating from a substrate and separated by a first isolation feature, and a gate structure intersecting the first semiconductor fin and the second semiconductor fin. The method also includes removing the gate structure and portions of the first semiconductor fin, the second semiconductor fin, and the first isolation feature disposed directly under the gate structure to form a fin isolation trench, forming a dielectric layer over the workpiece to substantially fill the fin isolation trench, and planarizing the dielectric layer to form a fin isolation structure in the fin isolation trench.