Abstract: A keyboard device includes plural key structures. Each key structure includes a plate assembly, a keycap, a connecting member and a buffering element. The plate assembly has a hollow region. The keycap is located over the plate assembly. The connecting member is connected between the keycap and the plate assembly. The keycap is connected with the connecting member through at least one hook of the keycap. The keycap is movable upwardly or downwardly relative to the plate assembly through the connecting member. The buffering element is installed on the plate assembly. The buffering element is extended in a direction toward the keycap and penetrated through the hollow region of the plate assembly. While the keycap is moved downwardly and the at least one hook of the keycap is contacted with the buffering element, there is the gap between the keycap and the plate assembly.

Abstract: A semiconductor device includes a semiconductor fin protruding from a substrate, a gate electrode over the semiconductor fin, a gate insulating layer between the semiconductor fin and the gate electrode, source and drain regions disposed on opposite sides of the semiconductor fin, a first stressor formed in a region between the source and drain regions. The first stressor is a grading strained stressor including multiple graded portions formed at graded depths. The first stressor is configured to create one of a graded compressive stress or a graded tensile stress.

Abstract: A keyboard device includes plural key structures, a membrane circuit board and a flexible light shielding element. Each key structure includes a keycap. The keycap has a first end surface and a second end surface. The membrane circuit board is located under the keycap. The flexible light shielding element is arranged between the keycap and the membrane circuit board, and includes a bottom layer and plural stopping walls. Each stopping wall includes a wall body and a platform part. The wall body is protruded from the bottom layer and in the direction toward the keycap. An included angle is formed between the wall body and the bottom layer. The platform part is protruded from the wall body. The platform part is arranged between the second end surface of the keycap and the bottom layer. The platform part is contacted with the second end surface.

Abstract: A method and structure for providing a GAA device. In some embodiments, a substrate including an insulating layer disposed thereon is provided. By way of example, a first metal portion is formed within the insulating layer. In various embodiments, a first lateral surface of the first metal portion is exposed. After exposure of the first lateral surface of the first metal portion, a first graphene layer is formed on the exposed first lateral surface. In some embodiments, the first graphene layer defines a first vertical plane parallel to the exposed first lateral surface. Thereafter, in some embodiments, a first nanobar is formed on the first graphene layer, where the first nanobar extends in a first direction normal to the first vertical plane defined by the first graphene layer.

Abstract: A semiconductor device includes a semiconductor fin protruding from a substrate, a gate electrode over the semiconductor fin, a gate insulating layer between the semiconductor fin and the gate electrode, source and drain regions disposed on opposite sides of the semiconductor fin, a first stressor formed in a region between the source and drain regions. The first stressor is a grading strained stressor including multiple graded portions formed at graded depths. The first stressor is configured to create one of a graded compressive stress or a graded tensile stress.

Abstract: A semiconductor device includes a semiconductor fin protruding from a substrate, a gate electrode over the semiconductor fin, a gate insulating layer between the semiconductor fin and the gate electrode, source and drain regions disposed on opposite sides of the semiconductor fin, a first stressor formed in a region between the source and drain regions. The first stressor including one material selected from the group consisting of He, Ne, and Ga.

Abstract: A semiconductor device includes a semiconductor fin protruding from a substrate, a gate electrode over the semiconductor fin, a gate insulating layer between the semiconductor fin and the gate electrode, source and drain regions disposed on opposite sides of the semiconductor fin, a first stressor formed in a region between the source and drain regions. The first stressor including one material selected from the group consisting of He, Ne, and Ga.

Abstract: A semiconductor device includes a semiconductor fin protruding from a substrate, a gate electrode over the semiconductor fin, a gate insulating layer between the semiconductor fin and the gate electrode, source and drain regions disposed on opposite sides of the semiconductor fin, a first stressor formed in a region between the source and drain regions. The first stressor is a grading strained stressor including multiple graded portions formed at graded depths. The first stressor is configured to create one of a graded compressive stress or a graded tensile stress.

Abstract: A semiconductor device includes a semiconductor fin protruding from a substrate, a gate electrode over the semiconductor fin, a gate insulating layer between the semiconductor fin and the gate electrode, source and drain regions disposed on opposite sides of the semiconductor fin, a first stressor formed in a region between the source and drain regions. The first stressor is a grading strained stressor including multiple graded portions formed at graded depths. The first stressor is configured to create one of a graded compressive stress or a graded tensile stress.

Abstract: A keyboard device includes a base plate and a key structure. The key structure includes a keycap, a first connecting element, a second connecting element and a stabilizer bar. The first connecting element and the second connecting element are arranged between the base plate and the keycap and connected with the base plate and the keycap. The stabilizer bar is fixed on the first connecting element and the second connecting element. Since the stabilizer bar does not collide with the base plate to generate the unpleasant noise, the keyboard device of the present invention is capable of reducing the noise. Moreover, since the stabilizer bar is fixed on the first connecting element and the second connecting element, it is not necessary to install hooks corresponding to the stabilizer bar on the keycap and the base plate and the fabricating cost is reduced.

Abstract: The current disclosure describes semiconductor devices, e.g., transistors including a thin semimetal layer as a channel region over a substrate, which includes bandgap opening and exhibits semiconductor properties. Described semiconductor devices include source/drain regions that include a thicker semimetal layer over the thin semimetal layer serving as the channel region, this thicker semimetal layer exhibiting metal properties. The semimetal used for the source/drain regions include a same or similar semimetal material as the semimetal of the channel region.

Abstract: A keyboard device includes a key, a base plate, a membrane circuit board and a buffering part. The membrane circuit board is disposed on the base plate. The key includes a keycap and a stabilizer bar. The stabilizer bar is connected between the keycap and the base plate. The stabilizer bar includes a main bar part, a first linking part and a first insertion part. The first linking part is connected between the main bar part and the first insertion part. The buffering part is disposed on the base plate or the membrane circuit board and located under the first linking part. While a keycap is moved downwardly relative to the base plate, the linking part of the stabilizer bar is contacted with the buffering part. The contact point between the linking part of the stabilizer bar and the buffering part is used as a fulcrum.

Abstract: A luminous keyboard includes a key module, a light guide plate, a top-view light-emitting element and a light-shading element. The top-view light-emitting element emits a light beam. The light guide plate is located under the key module. The top-view light-emitting element is located under the light guide plate. A light-outputting surface of the top-view light-emitting element is contacted with the light guide plate. The light-shading element is disposed on the light guide plate for shading the light beam. A portion of the light-shading element is inserted into the light guide plate opening and formed as a reflective part in the light guide plate opening. After the light beam is projected on the reflective part and reflected by the reflective part, the light beam is transferred within the light guide plate and projected to the key module.

Abstract: A keyboard device includes a keyboard base, a flexible protection cover and a protective frame. The flexible protection cover is located over the keyboard base to cover the key structures that are disposed on the keyboard base. The protective frame is disposed on the flexible protection cover. Moreover, plural hollow protrusion structures of the flexible protection cover are partially penetrated through corresponding openings of the protective frame and exposed outside the protective frame. The elastic buffering parts of the flexible protection cover are disposed within corresponding concave structures of the protective frame and covered by the protective frame.

Abstract: A keyboard device includes a membrane circuit board, a key frame, a position-limiting frame and a key structure. The key frame is located over the membrane circuit board. The position-limiting frame is located over the key frame. The key frame includes a first frame body and a first receiving hole. The first receiving hole runs through the first frame body along a vertical direction. The position-limiting frame includes a second frame body and a second receiving hole. The second receiving hole runs through the second frame body along the vertical direction. The second receiving hole is in communication with the first receiving hole. The key structure includes a keycap and a protrusion part. The keycap is movable within the first receiving hole and the second receiving hole. A portion of the protrusion part is located under the second frame body.

Abstract: A semiconductor device includes a semiconductor fin protruding from a substrate, a gate electrode over the semiconductor fin, a gate insulating layer between the semiconductor fin and the gate electrode, source and drain regions disposed on opposite sides of the semiconductor fin, a first stressor formed in a region between the source and drain regions. The first stressor including one material selected from the group consisting of He, Ne, and Ga.

Abstract: A semiconductor device includes a semiconductor fin protruding from a substrate, a gate electrode over the semiconductor fin, a gate insulating layer between the semiconductor fin and the gate electrode, source and drain regions disposed on opposite sides of the semiconductor fin, a first stressor formed in a region between the source and drain regions. The first stressor is a grading strained stressor including multiple graded portions formed at graded depths. The first stressor is configured to create one of a graded compressive stress or a graded tensile stress.

Abstract: The current disclosure describes semiconductor devices, e.g., transistors including a thin semimetal layer as a channel region over a substrate, which includes bandgap opening and exhibits semiconductor properties. Described semiconductor devices include source/drain regions that include a thicker semimetal layer over the thin semimetal layer serving as the channel region, this thicker semimetal layer exhibiting metal properties. The semimetal used for the source/drain regions include a same or similar semimetal material as the semimetal of the channel region.

Abstract: A semiconductor device includes a semiconductor fin protruding from a substrate, a gate electrode over the semiconductor fin, a gate insulating layer between the semiconductor fin and the gate electrode, source and drain regions disposed on opposite sides of the semiconductor fin, a first stressor formed in a region between the source and drain regions. The first stressor is a grading strained stressor including multiple graded portions formed at graded depths. The first stressor is configured to create one of a graded compressive stress or a graded tensile stress.

Abstract: The current disclosure describes semiconductor devices, e.g., transistors including a thin semimetal layer as a channel region over a substrate, which includes bandgap opening and exhibits semiconductor properties. Described semiconductor devices include source/drain regions that include a thicker semimetal layer over the thin semimetal layer serving as the channel region, this thicker semimetal layer exhibiting metal properties. The semimetal used for the source/drain regions include a same or similar semimetal material as the semimetal of the channel region.