Abstract: According to example embodiments, a substrate for a power module includes a first part, a second part, and a third part on a same surface of an underlying part of the substrate. The first part, the second part, and the third part may be spaced apart from each other, electrically insulated from each other, and not directly contacting each other. The third part may surround the first part and the second part. A first element module may be on the third part. The first part, the second part, and the third part may be conductive.

Abstract: According to example embodiments, a substrate for a power module includes first to third parts spaced apart from each other, where the third part surrounds the first and second parts, and a conductive layer on the first to third parts. A terminal of a first polarity is connected to the first part, and a terminal of a second polarity is connected to the second part. The first and second terminals may be spaced apart from each other and each have a coupling part, a body, and a contact part. The bodies of the first and second terminals may overlap each other. A power module may include the substrate.

Abstract: According to example embodiments, a substrate for a power module includes first to third parts spaced apart from each other, where the third part surrounds the first and second parts, and a conductive layer on the first to third parts. A terminal of a first polarity is connected to the first part, and a terminal of a second polarity is connected to the second part. The first and second terminals may be spaced apart from each other and each have a coupling part, a body, and a contact part. The bodies of the first and second terminals may overlap each other. A power module may include the substrate.

Abstract: A semiconductor device package may include: a semiconductor chip element; and a supporting structure on which the semiconductor chip element is mounted and including an electrical connection element for connecting the semiconductor chip element to an external terminal. The supporting structure may include: a first lead frame including a heat dissipation element; a second lead frame coupled to the first lead frame; and/or an insulator configured to electrically insulate the first and second lead frames from each other. Each of the first and second lead frames may include a mounting region on which the semiconductor chip element is mounted. The first lead frame may include: a first portion; and/or a second portion formed on the first portion and having a smaller width than that of the first portion. The insulator may be on the first portion around the second portion. The second lead frame may be on the insulator.

Abstract: A semiconductor device and a method of manufacturing the semiconductor device are provided. The semiconductor device is a half bridged field effect transistor having a monolithic chip, and includes a semiconductor substrate with a 2-dimensional electron gas layer formed therein; a drain electrode formed on the semiconductor substrate; a first gate electrode, an output electrode, a second gate electrode, and a source electrode. The method of manufacturing the semiconductor device uses a method of monolithically forming a stack structure, which implements a half bridge function, on a substrate according to semiconductor processes.

Abstract: Provided are a substrate for a power module having a uniform parallel switching characteristic and a power module including the same. The substrate for the power module includes a plurality of areas on which input terminals are mounted, an area on which an output terminal is mounted, a plurality of areas on which devices are mounted, and an area on which a plurality of control pins are mounted. The plurality of areas on which the devices are mounted are bilaterally symmetric about the area on which the plurality of control pins are mounted. The plurality of areas on which the input terminals are mounted, respectively, are provided into three areas spaced apart from each other and bilaterally symmetric to each other. The plurality of areas on which the device are mounted are bilaterally symmetric about the area on which the control pins are mounted.

Abstract: A light screening apparatus and an electronic device including the light screening apparatus are provided, where the electronic device could be an imaging device or a display device. The light screening apparatus includes a base plate, a rollup blade, and a driving unit. The base plate includes a lower electrode and a light transmitting portion through which light passes. The rollup blade includes an upper electrode and at least two layers having different optical properties. The driving portion is electrically connected to the base plate and the rollup blade, and it controls the amount of light passing through the light transmitting portion of the base plate. The outer circumferential surface of the rollup blade, when in a rolled-up position, may be an anti-reflection surface.

Abstract: A semiconductor device package may comprise: a semiconductor chip element; and/or a supporting structure on which the semiconductor chip element is mounted and comprising an electrical connection element for connecting the semiconductor chip element to an external terminal. The supporting structure may comprise: a first lead frame comprising a heat dissipation element; a second lead frame coupled to the first lead frame; and/or an insulator configured to electrically insulate the first and second lead frames. Each of the first and second lead frames may comprise a mounting region on which the semiconductor chip element is mounted.

Abstract: A semiconductor device and a method of manufacturing the semiconductor device are provided. The semiconductor device is a half bridged field effect transistor having a monolithic chip, and includes a semiconductor substrate with a 2-dimensional electron gas layer formed therein; a drain electrode formed on the semiconductor substrate; a first gate electrode, an output electrode, a second gate electrode, and a source electrode. The method of manufacturing the semiconductor device uses a method of monolithically forming a stack structure, which implements a half bridge function, on a substrate according to semiconductor processes.

Abstract: Provided are a capacitive transducer, and methods of manufacturing and operating the same. The capacitive transducer includes: a monolithic substrate comprising a first doping region, a second doping region that is opposite in conductivity to the first doping region, and a vibrating portion; and an empty space that is disposed between the first doping region and the vibrating portion. The vibrating portion includes a plurality of through-holes, and a material film for sealing the plurality of through-holes is disposed on the vibrating portion.

Abstract: According to example embodiments, a substrate for a power module includes first to third parts spaced apart from each other, where the third part surrounds the first and second parts, and a conductive layer on the first to third parts. A terminal of a first polarity is connected to the first part, and a terminal of a second polarity is connected to the second part. The first and second terminals may be spaced apart from each other and each have a coupling part, a body, and a contact part. The bodies of the first and second terminals may overlap each other. A power module may include the substrate.

Abstract: A light screening apparatus and a method of fabricating the same are provided. The light screening apparatus includes: a base plate including a first electrode; at least one material layer on the base plate; a rollup blade including a second electrode and configured to be disposed corresponding to a light transmitting portion of the base plate; a driving unit configured to be electrically connected to the first electrode and the second electrode; and a sticking prevention structure which prevents sticking between the rollup blade and the material layer. The sticking prevention structure may refer to a surface structure of at least one of the rollup blade and the material layer or a sticking prevention layer or a sticking prevention pattern which is additionally formed on at least one of an outer circumference surface of the rollup blade and a surface of the material layer.

Abstract: A light transmittance adjusting device is provided, including a first electrode, a second electrode, and a first elastomer layer disposed between the first and second electrodes. A light transmittance of the first elastomer layer is variable depending on a voltage applied thereto.

Abstract: Provided are a substrate for a power module having a uniform parallel switching characteristic and a power module including the same. The substrate for the power module includes a plurality of areas on which input terminals are mounted, an area on which an output terminal is mounted, a plurality of areas on which devices are mounted, and an area on which a plurality of control pins are mounted. The plurality of areas on which the devices are mounted are bilaterally symmetric about the area on which the plurality of control pins are mounted. The plurality of areas on which the input terminals are mounted, respectively, are provided into three areas spaced apart from each other and bilaterally symmetric to each other. The plurality of areas on which the device are mounted are bilaterally symmetric about the area on which the control pins are mounted.

Abstract: There are provided a light screening apparatus and a manufacturing method thereof. The light screening apparatus includes a substrate, a transparent electrode, a plurality of roll-up actuators and a plurality of light screening patterns. The substrate includes a light-transmitting region and the transparent electrode is formed on one surface of the substrate. Each roll-up actuator, which has opaque characteristics, is fixed on the circumference portion of the light-transmitting region and includes a fixing end and a moving part which extends from the fixing end. Gaps are formed between adjacent roll-up actuators, and the light screening patterns are formed on the substrate at locations corresponding to the gaps. The light-screening patterns prevent light incident through the gaps from being transmitted to the light-transmitting region.

Abstract: Provided are a capacitive transducer, and methods of manufacturing and operating the same. The capacitive transducer includes: a monolithic substrate comprising a first doping region, a second doping region that is opposite in conductivity to the first doping region, and a vibrating portion; and an empty space that is disposed between the first doping region and the vibrating portion. The vibrating portion includes a plurality of through-holes, and a material film for sealing the plurality of through-holes is disposed on the vibrating portion.

Abstract: An energy conversion device, and methods of manufacturing and operating the same. The energy conversion device includes: a monolithic single-crystal silicon layer that includes a plurality of doping regions; a vibrator that is disposed in the single-crystal silicon layer and is connected to a doping region of the plurality of doping regions; a first diode that is a PN junction diode and allows an input signal applied to the vibrator to pass therethrough; and a second diode that is a PN junction diode and allows a signal output from the vibrator to pass therethrough.

Abstract: A micro shutter device and a method of manufacturing the same are provided. A barrier is provided to define a unit pixel. Film actuators are formed within the unit pixel. The film actuators are configured to be bent in opposite directions to each other from a substrate so that light passing through the substrate from an external light source is blocked in a voltage non-applied state, and to be straightened perpendicularly to the substrate so that the light is transmitted upon voltage application. Accordingly, it is possible to increase the aperture ratio and thus improve the light efficiency. Furthermore, it is possible to reduce voltage necessary to drive the film actuators and thus increase the drive speed.

Abstract: A micro shutter device and a method of manufacturing the micro shutter device are provided. A transparent substrate is provided. A barrier is formed on the substrate to partition a unit pixel. A pattern layer is formed with a transparent material to have a transparent first pattern portion on the substrate in the unit pixel. A movable plate is arranged to face the pattern layer, has an opaque second pattern layer corresponding to a shape of the first pattern portion, and is configured to transmit light therethrough except the second pattern portion. An actuator is for moving the movable plate. Therefore, light leakage due to diffraction can be prevented, resulting in increasing contrast ratio and improving light efficiency.

Abstract: A light transmittance adjusting device is provided, including a first electrode, a second electrode, and a first elastomer layer disposed between the first and second electrodes. A light transmittance of the first elastomer layer is variable depending on a voltage applied thereto.