Abstract: A current-mode programming (CMP) circuit of one-time programmable memory (OTP) is disclosed. The CMP circuit has a constant current source and a closed-loop detector. The constant current source provides a sufficiently high programming current of rupturing a fuse of a bit cell of OTP selected by the logic control unit. The closed-loop detector monitors the programming current and determines whether the programming current is rapidly reduced when the fuse has been ruptured. Therefore, the CMP circuit successfully ruptures the fuse of the selected bit cell against process and temperature impacts thereon. Further, the closed-loop detector monitors the resistance transition of the selected bit cell and flags a successful programming signal in real time during each fuse-rupturing process.

Abstract: Method for depositing amorphous silicon materials are provide and include generating a plasma within a plasma unit in fluid communication with a process chamber, where the plasma unit contains a capacitively coupled plasma (CCP) unit and flowing the plasma through an ion suppressor to produce an activated fluid comprising reactive species and neutral species. The activated fluid has an ion concentration of about 70% to about 99% less than an ion concentration of the plasma. The method also includes flowing a mixture of the activated fluid and a silicon precursor to a substrate disposed in the process chamber and forming an amorphous silicon layer on the substrate.

Abstract: Method for depositing amorphous silicon materials are provide and include generating a plasma within a plasma unit in fluid communication with a process chamber and flowing the plasma through an ion suppressor to produce an activated fluid containing reactive species and neutral species. The activated fluid either contains no ions or contains a lower concentration of ions than the plasma. The method further includes flowing the activated fluid into a first inlet of a dual channel showerhead within the process chamber and flowing a silicon precursor into a second inlet of the dual channel showerhead. Thereafter, the method includes flowing a mixture of the activated fluid and the silicon precursor out of the dual channel showerhead and forming an amorphous silicon layer on a substrate disposed in the process chamber.

Abstract: A pedestal for a semiconductor processing chamber is provided. The pedestal includes a first body comprising a ceramic material, wherein a plurality of heater elements are encapsulated within the first body, and a second body comprising a ceramic material, wherein one or more continuously curved grooves are formed in one or more surfaces of the second body. Additionally, the first body is coupled to the second body and encloses the grooves.

Abstract: A thermal processing system is provided. The thermal processing system can include a processing chamber and a workpiece disposed within the processing chamber. The thermal processing system can include a heat source configured to emit light towards the workpiece. The thermal processing system can further include a tunable reflective array disposed between the workpiece and the heat source. The tunable reflective array can include a plurality of pixels. Each pixel of the plurality of pixels can include an electrochromatic material configurable in a translucent state or an opaque state. When the electrochromatic material of a pixel is configured in the translucent state, the light at least partially passes through the pixel. Conversely, transmission of light through a pixel is reduced when the electrochromatic material of the pixel is configured in the opaque state.

Abstract: One embodiment relates to a substrate carrier for use in electroplating a plurality of substrates. The substrate carrier comprises a non-conductive carrier body on which the substrates are to be held. Electrically-conductive lines are embedded within the carrier body, and a plurality of contact clips are coupled to the electrically-conductive lines embedded within the carrier body. The contact clips hold the substrates in place and electrically couple the substrates to the electrically-conductive lines. The non-conductive carrier body is continuous so as to be impermeable to flow of electroplating solution through the non-conductive carrier body. Other embodiments, aspects and features are also disclosed.

Abstract: Method for depositing amorphous silicon materials are provide and include generating a plasma within a plasma unit in fluid communication with a process chamber and flowing the plasma through an ion suppressor to produce an activated fluid containing reactive species and neutral species. The activated fluid either contains no ions or contains a lower concentration of ions than the plasma. The method further includes flowing the activated fluid into a first inlet of a dual channel showerhead within the process chamber and flowing a silicon precursor into a second inlet of the dual channel showerhead. Thereafter, the method includes flowing a mixture of the activated fluid and the silicon precursor out of the dual channel showerhead and forming an amorphous silicon layer on a substrate disposed in the process chamber.

Abstract: A thermal processing system is provided. The thermal processing system can include a processing chamber and a workpiece disposed within the processing chamber. The thermal processing system can include a heat source configured to emit light towards the workpiece. The thermal processing system can further include a tunable reflective array disposed between the workpiece and the heat source. The tunable reflective array can include a plurality of pixels. Each pixel of the plurality of pixels can include an electrochromatic material configurable in a translucent state or an opaque state. When the electrochromatic material of a pixel is configured in the translucent state, the light at least partially passes through the pixel. Conversely, transmission of light through a pixel is reduced when the electrochromatic material of the pixel is configured in the opaque state.

Abstract: Electrostatic shields for inductive plasma sources are provided. In one implementations, a plasma processing apparatus can include a plasma chamber, a dielectric wall forming at least a portion of the plasma chamber, an inductive coupling element located proximate the dielectric wall. The inductive coupling element can generate a plasma in the plasma chamber when energized with radio frequency (RF) energy. The plasma processing apparatus can further include an electrostatic shield located between the inductive coupling element and the dielectric wall. The electrostatic shield can include a plurality of shield plates, slots, and/or layers.

Abstract: One embodiment relates to a substrate carrier for use in electroplating a plurality of substrates. The substrate carrier comprises a non-conductive carrier body on which the substrates are to be held. Electrically-conductive lines are embedded within the carrier body, and a plurality of contact clips are coupled to the electrically-conductive lines embedded within the carrier body. The contact clips hold the substrates in place and electrically couple the substrates to the electrically-conductive lines. The non-conductive carrier body is continuous so as to be impermeable to flow of electroplating solution through the non-conductive carrier body. Other embodiments, aspects and features are also disclosed.

Abstract: A pedestal for a semiconductor processing chamber is provided. The pedestal includes a first body comprising a ceramic material, wherein a plurality of heater elements are encapsulated within the first body, and a second body comprising a ceramic material, wherein one or more continuously curved grooves are formed in one or more surfaces of the second body. Additionally, the first body is coupled to the second body and encloses the grooves.

Abstract: The present disclosure relates to methods and apparatuses for controlling a plasma sheath near a substrate edge. The method includes changing the voltage/current distribution across a central electrode and an annular electrode within the substrate assembly to facilitate the spatial distribution of the plasma across the substrate. The method also includes applying a first radio frequency power to a central electrode embedded in a substrate support and applying a second radio frequency power to an annular electrode embedded in the substrate support at a location different than the central electrode. The annular electrode is spaced from the central electrode and circumferentially surrounds the central electrode. The method also includes monitoring parameters of the first and second radio frequency powers and adjusting one of the first and second radio frequency powers based on the monitored parameters.

Abstract: A device and a method for generating input control signals of a serialized compressed scan circuit are provided. A control signal generating device receives a test clock signal from a clock input port and a state enable signal from a state enable bus, and correspondingly generates a shift enable signal, a capture enable signal and a strobe signal. A clock gating device is coupled to the control signal generating device, and receives the shift enable signal, the capture enable signal and the strobe signal. When the shift enable signal is enabled, the clock gating device controls the test clock signal as a serialized scan clock signal. When the strobe signal or the capture enable signal is enabled, the clock gating device controls the test clock signal as a scan clock signal.

Abstract: One embodiment relates to a substrate carrier for use in electroplating a plurality of substrates. The substrate carrier comprises a non-conductive carrier body on which the substrates are to be held. Electrically-conductive lines are embedded within the carrier body, and a plurality of contact clips are coupled to the electrically-conductive lines embedded within the carrier body. The contact clips hold the substrates in place and electrically couple the substrates to the electrically-conductive lines. The non-conductive carrier body is continuous so as to be impermeable to flow of electroplating solution through the non-conductive carrier body. Other embodiments, aspects and features are also disclosed.

Abstract: A photovoltaic (PV) system is disclosed. The PV system can include a first and a second tracker that includes a first and a second plurality of PV collection devices. The PV system can include a first motor configured to adjust an angle of the first tracker. The PV system can include an inverter coupled to an output of the first plurality of PV collection devices. The inverter can include a first local controller comprising control circuitry configured to control the first motor. In an example, the inverter can be a string inverter. In one example, the inverter can a block inverter coupled to an output of the first and second plurality of PV collection devices. The PV system can also include a power collection unit, where the power collection unit can be coupled to the first plurality of PV collection devices and include the first local controller.

Abstract: Apparatus for high productivity combinatorial (HPC) processing of semiconductor substrates and HPC methods are described. An apparatus includes a showerhead and two or more pressure-controlled one-way valves connected to the showerhead and used for controlling flow of different processing gases into the showerhead. The pressure-controlled one-way valves are not externally controlled by any control systems. Instead, these valves open and close in response to preset conditions, such as pressure differentials and/or flow differentials. One example of such pressure-controlled one-way valves is a check valve. These valves generally allow the flow only in one direction, i.e., into the showerhead. Furthermore, lack of external controls and specific mechanical designs allow positioning these pressure-controlled one-way valves in close proximity to the showerhead thereby reducing the dead volume between the valves and the showerhead and also operating these valves at high temperatures.

Abstract: One embodiment relates to a substrate carrier for use in electroplating a plurality of substrates. The substrate carrier comprises a non-conductive carrier body on which the substrates are to be held. Electrically-conductive lines are embedded within the carrier body, and a plurality of contact clips are coupled to the electrically-conductive lines embedded within the carrier body. The contact clips hold the substrates in place and electrically couple the substrates to the electrically-conductive lines. The non-conductive carrier body is continuous so as to be impermeable to flow of electroplating solution through the non-conductive carrier body. Other embodiments, aspects and features are also disclosed.

Abstract: In some embodiments, apparatus are provided that provide for flexible processing in high productivity combinatorial (HPC) system. The apparatus allow for interchangeable functionality that includes deposition, plasma treatment, ion beam treatment, in-situ annealing, and in-situ metrology. The apparatus are designed so that the functionality may be integrated within a single processing chamber for enhanced flexibility.

Abstract: In some embodiments, apparatus are provided that provide for flexible processing in high productivity combinatorial (HPC) system. The apparatus allow for interchangeable functionality that includes deposition, plasma treatment, ion beam treatment, in-situ annealing, and in-situ metrology. The apparatus are designed so that the functionality may be integrated within a single processing chamber for enhanced flexibility.

Abstract: One embodiment relates to a substrate carrier for use in electroplating a plurality of substrates. The carrier includes a non-conductive carrier body on which the substrates are placed and conductive lines embedded within the carrier body. A plurality of conductive clip attachment parts are attached in a permanent manner to the conductive lines embedded within the carrier body. A plurality of contact clips are attached in a removable manner to the clip attachment parts. The contact clips hold the substrates in place and conductively connecting the substrates with the conductive lines. Other embodiments, aspects and features are also disclosed.