Abstract: Method for depositing amorphous silicon materials are provide and include generating a plasma within a plasma unit in fluid communication with a process chamber and flowing the plasma through an ion suppressor to produce an activated fluid containing reactive species and neutral species. The activated fluid either contains no ions or contains a lower concentration of ions than the plasma. The method further includes flowing the activated fluid into a first inlet of a dual channel showerhead within the process chamber and flowing a silicon precursor into a second inlet of the dual channel showerhead. Thereafter, the method includes flowing a mixture of the activated fluid and the silicon precursor out of the dual channel showerhead and forming an amorphous silicon layer on a substrate disposed in the process chamber.

Abstract: A pedestal for a semiconductor processing chamber is provided. The pedestal includes a first body comprising a ceramic material, wherein a plurality of heater elements are encapsulated within the first body, and a second body comprising a ceramic material, wherein one or more continuously curved grooves are formed in one or more surfaces of the second body. Additionally, the first body is coupled to the second body and encloses the grooves.

Abstract: One embodiment relates to a substrate carrier for use in electroplating a plurality of substrates. The substrate carrier comprises a non-conductive carrier body on which the substrates are to be held. Electrically-conductive lines are embedded within the carrier body, and a plurality of contact clips are coupled to the electrically-conductive lines embedded within the carrier body. The contact clips hold the substrates in place and electrically couple the substrates to the electrically-conductive lines. The non-conductive carrier body is continuous so as to be impermeable to flow of electroplating solution through the non-conductive carrier body. Other embodiments, aspects and features are also disclosed.

Abstract: Method for depositing amorphous silicon materials are provide and include generating a plasma within a plasma unit in fluid communication with a process chamber and flowing the plasma through an ion suppressor to produce an activated fluid containing reactive species and neutral species. The activated fluid either contains no ions or contains a lower concentration of ions than the plasma. The method further includes flowing the activated fluid into a first inlet of a dual channel showerhead within the process chamber and flowing a silicon precursor into a second inlet of the dual channel showerhead. Thereafter, the method includes flowing a mixture of the activated fluid and the silicon precursor out of the dual channel showerhead and forming an amorphous silicon layer on a substrate disposed in the process chamber.

Abstract: Electrostatic shields for inductive plasma sources are provided. In one implementations, a plasma processing apparatus can include a plasma chamber, a dielectric wall forming at least a portion of the plasma chamber, an inductive coupling element located proximate the dielectric wall. The inductive coupling element can generate a plasma in the plasma chamber when energized with radio frequency (RF) energy. The plasma processing apparatus can further include an electrostatic shield located between the inductive coupling element and the dielectric wall. The electrostatic shield can include a plurality of shield plates, slots, and/or layers.

Abstract: One embodiment relates to a substrate carrier for use in electroplating a plurality of substrates. The substrate carrier comprises a non-conductive carrier body on which the substrates are to be held. Electrically-conductive lines are embedded within the carrier body, and a plurality of contact clips are coupled to the electrically-conductive lines embedded within the carrier body. The contact clips hold the substrates in place and electrically couple the substrates to the electrically-conductive lines. The non-conductive carrier body is continuous so as to be impermeable to flow of electroplating solution through the non-conductive carrier body. Other embodiments, aspects and features are also disclosed.

Abstract: A pedestal for a semiconductor processing chamber is provided. The pedestal includes a first body comprising a ceramic material, wherein a plurality of heater elements are encapsulated within the first body, and a second body comprising a ceramic material, wherein one or more continuously curved grooves are formed in one or more surfaces of the second body. Additionally, the first body is coupled to the second body and encloses the grooves.

Abstract: The present disclosure relates to methods and apparatuses for controlling a plasma sheath near a substrate edge. The method includes changing the voltage/current distribution across a central electrode and an annular electrode within the substrate assembly to facilitate the spatial distribution of the plasma across the substrate. The method also includes applying a first radio frequency power to a central electrode embedded in a substrate support and applying a second radio frequency power to an annular electrode embedded in the substrate support at a location different than the central electrode. The annular electrode is spaced from the central electrode and circumferentially surrounds the central electrode. The method also includes monitoring parameters of the first and second radio frequency powers and adjusting one of the first and second radio frequency powers based on the monitored parameters.

Abstract: A device and a method for generating input control signals of a serialized compressed scan circuit are provided. A control signal generating device receives a test clock signal from a clock input port and a state enable signal from a state enable bus, and correspondingly generates a shift enable signal, a capture enable signal and a strobe signal. A clock gating device is coupled to the control signal generating device, and receives the shift enable signal, the capture enable signal and the strobe signal. When the shift enable signal is enabled, the clock gating device controls the test clock signal as a serialized scan clock signal. When the strobe signal or the capture enable signal is enabled, the clock gating device controls the test clock signal as a scan clock signal.

Abstract: One embodiment relates to a substrate carrier for use in electroplating a plurality of substrates. The substrate carrier comprises a non-conductive carrier body on which the substrates are to be held. Electrically-conductive lines are embedded within the carrier body, and a plurality of contact clips are coupled to the electrically-conductive lines embedded within the carrier body. The contact clips hold the substrates in place and electrically couple the substrates to the electrically-conductive lines. The non-conductive carrier body is continuous so as to be impermeable to flow of electroplating solution through the non-conductive carrier body. Other embodiments, aspects and features are also disclosed.

Abstract: A photovoltaic (PV) system is disclosed. The PV system can include a first and a second tracker that includes a first and a second plurality of PV collection devices. The PV system can include a first motor configured to adjust an angle of the first tracker. The PV system can include an inverter coupled to an output of the first plurality of PV collection devices. The inverter can include a first local controller comprising control circuitry configured to control the first motor. In an example, the inverter can be a string inverter. In one example, the inverter can a block inverter coupled to an output of the first and second plurality of PV collection devices. The PV system can also include a power collection unit, where the power collection unit can be coupled to the first plurality of PV collection devices and include the first local controller.

Abstract: Apparatus for high productivity combinatorial (HPC) processing of semiconductor substrates and HPC methods are described. An apparatus includes a showerhead and two or more pressure-controlled one-way valves connected to the showerhead and used for controlling flow of different processing gases into the showerhead. The pressure-controlled one-way valves are not externally controlled by any control systems. Instead, these valves open and close in response to preset conditions, such as pressure differentials and/or flow differentials. One example of such pressure-controlled one-way valves is a check valve. These valves generally allow the flow only in one direction, i.e., into the showerhead. Furthermore, lack of external controls and specific mechanical designs allow positioning these pressure-controlled one-way valves in close proximity to the showerhead thereby reducing the dead volume between the valves and the showerhead and also operating these valves at high temperatures.

Abstract: One embodiment relates to a substrate carrier for use in electroplating a plurality of substrates. The substrate carrier comprises a non-conductive carrier body on which the substrates are to be held. Electrically-conductive lines are embedded within the carrier body, and a plurality of contact clips are coupled to the electrically-conductive lines embedded within the carrier body. The contact clips hold the substrates in place and electrically couple the substrates to the electrically-conductive lines. The non-conductive carrier body is continuous so as to be impermeable to flow of electroplating solution through the non-conductive carrier body. Other embodiments, aspects and features are also disclosed.

Abstract: In some embodiments, apparatus are provided that provide for flexible processing in high productivity combinatorial (HPC) system. The apparatus allow for interchangeable functionality that includes deposition, plasma treatment, ion beam treatment, in-situ annealing, and in-situ metrology. The apparatus are designed so that the functionality may be integrated within a single processing chamber for enhanced flexibility.

Abstract: In some embodiments, apparatus are provided that provide for flexible processing in high productivity combinatorial (HPC) system. The apparatus allow for interchangeable functionality that includes deposition, plasma treatment, ion beam treatment, in-situ annealing, and in-situ metrology. The apparatus are designed so that the functionality may be integrated within a single processing chamber for enhanced flexibility.

Abstract: Systems and methods for rapid generation of ALD saturation curves using segmented spatial ALD are disclosed. Methods include introducing a substrate, having a plurality of substrate segment regions, into a processing chamber. The substrate may be disposed upon a pedestal within the chamber. Sequentially exposing the plurality of segment regions to a precursor within the chamber at a first processing temperature. Afterwards, purging the precursor from the chamber and then sequentially exposing each plurality of segment regions to a reactant within the chamber at the first processing temperature. Afterwards, purging the reactant from the chamber. Repeat sequentially exposing the plurality of segment regions to the precursor and the reactant for a plurality of cycles. Each segment region may be sequentially exposed to the precursor for a unique processing time. The pedestal may be rotated prior to exposing each next segment region to the precursor and the reactant.

Abstract: Provided are apparatus for high productivity combinatorial (HPC) processing of semiconductor substrates and HPC methods. An apparatus includes a showerhead and two or more self-controlled one-way valves connected to the showerhead and used for controlling flow of different processing gases into the showerhead. The self-controlled one-way valves are not externally controlled by any control systems. Instead, these valves open and close in response to preset conditions, such as pressure differentials and/or flow differentials. One example of such self-controlled one-way valves is a check valve. These valves generally allow the flow only in one direction, i.e., into the showerhead. Furthermore, lack of external controls and specific mechanical designs allow positioning these self-controlled one-way valves in close proximity to the showerhead thereby reducing the dead volume between the valves and the showerhead and also operating these valves at high temperatures.

Abstract: A device and a method for generating input control signals of a serialized compressed scan circuit are provided. A control signal generating device receives a test clock signal from a clock input port and a state enable signal from a state enable bus, and correspondingly generates a shift enable signal, a capture enable signal and a strobe signal. A clock gating device is coupled to the control signal generating device, and receives the shift enable signal, the capture enable signal and the strobe signal. When the shift enable signal is enabled, the clock gating device controls the test clock signal as a serialized scan clock signal. When the strobe signal or the capture enable signal is enabled, the clock gating device controls the test clock signal as a scan clock signal.

Abstract: A repairable multi-layer memory chip stack wherein each of the memory chips of the chip stack includes a control unit, a decoding unit, a memory array module and a redundant repair unit comprising at least one redundant repair element. The decoding unit receives a memory address from an address bus, and correspondingly outputs a decoded address. The memory array module determines whether to allow a data bus to access the data of the memory array module corresponding to a decoded address in accordance with an activation signal of the control unit. The redundant repair element includes a valid field, a chip ID field, a faulty address field and a redundant memory. When the valid field is valid, the value of the chip ID field matches the ID code, and the value of the faulty address field matches the decoded address, the redundant memory is coupled to the data bus.

Abstract: One embodiment relates to a substrate carrier for use in electroplating a plurality of substrates. The carrier includes a non-conductive carrier body on which the substrates are placed and conductive lines embedded within the carrier body. A plurality of conductive clip attachment parts are attached in a permanent manner to the conductive lines embedded within the carrier body. A plurality of contact clips are attached in a removable manner to the clip attachment parts. The contact clips hold the substrates in place and conductively connecting the substrates with the conductive lines. Other embodiments, aspects and features are also disclosed.