Abstract: Provided is a polarization splitting device. The polarization splitting device includes a first optical element. The first optical element comprises a light incident surface, a polarization splitting interface and a reflective interface, and the polarization splitting interface and the reflective interface are correspondingly arranged. Incident light enters the first optical element through the light incident surface, and is split into first light and second light through the polarization splitting interface; the first light is incident on the reflective interface after being reflected by the polarization splitting interface, and exits from the first optical element after being reflected by the reflective interface; and the second light exits from the first optical element after being transmitted through the polarization splitting interface.

Abstract: An information handling system may include a group of nodes including at least one node. The information handling system may be configured to: execute, at a particular node of the group of nodes, a container registry that includes images for a plurality of containerized workloads; cause all nodes of the group of nodes to execute a containerized workload that is an image holder; and upgrade the container registry from an old image to a new image by: storing the old image and the new image in a local physical storage resource of the particular node; executing, by the image holder, the new image; shutting down the container registry that is executing the old image; and starting a new container registry, wherein the new container registry is configured to execute the new image.

Abstract: A level-shifter circuit that uses a gating signal is disclosed. The level-shifter circuit may initialize a shift node in response to a deactivation of a gating signal and an input signal. When the gating signal is activated, the level-shifter circuit may float the shift node, which can then be charged to a voltage level greater than that of an input signal. The level-shifter circuit may use the voltage level of the shift node to generate at least one output signal.

Abstract: A radio frequency power amplifier includes: a main amplifier, a main matching circuit, an auxiliary amplifier, an auxiliary matching circuit and an impedance conversion circuit. The main amplifier is configured to output a first amplified signal. The main matching circuit is connected between the main amplifier and the combining node and is configured to adjust a phase of the first amplified signal and raise an output impedance of the main amplifier to a first impedance. The auxiliary amplifier is configured to output a second amplified signal. The auxiliary matching circuit is connected between the auxiliary amplifier and the combining node and is configured to keep a phase of the second amplified signal and raise an output impedance of the auxiliary amplifier to a second impedance. The impedance conversion circuit is connected to the combining node and is configured to raise the impedance at the combining node to a transmission impedance.

Abstract: A flipped voltage follower having common gate electrode stage feedback, includes first to eleventh transistors and a tunable resistor. The source electrodes of the first to the third transistors are connected to a power supply end. The drain electrode of the first transistor and the gate electrodes of the first to the third transistors are connected to a first bias current source. The drain electrodes of the second and the fourth transistors, the source electrode of the sixth transistor and one end of the tunable resistor are connected. The source electrode of the fourth transistor is connected to the drain electrode of the eighth transistor. The gate electrodes of the sixth and the eighth transistors and the drain electrode and the gate electrode of the tenth transistor are connected. The drain electrodes of the third and the fifth transistor, the source electrode of the seventh transistor and the other end of the tunable resistor are connected.

Abstract: Disclosed in the present invention are a piperidine-substituted benzoic acid compound, and a pharmaceutical composition and the use thereof. The piperidine-substituted benzoic acid compound of the present invention is a compound as shown in formula (I) or a stereoisomer, a tautomer or an isotopic label thereof, or a pharmaceutically acceptable salt of any one of the foregoing. The compound has a good inhibitory activity on complement factor B, a good affinity activity on complement factor B, and a hemolytic activity and an inhibitory activity of an alternative complement pathway.

Abstract: A method of forming a semiconductor package is provided. The method includes forming a first wafer that includes multiple photonic dies. The method includes forming a second wafer that includes multiple electronic dies. The method includes forming micro lenses within the second wafer. The method includes bonding the first wafer to the second wafer after forming the plurality of micro lenses. The method further includes performing a singulation process to dice the first wafer and the second wafer to form multiple photonic packages, wherein one of the photonic packages includes an electronic die, a photonic die bonded to the electronic die, and one or more micro lenses embedded in the electronic die.

Abstract: An optical imaging lens includes an outer cover, a lens barrel, and multiple lens elements disposed in the lens barrel. A front end portion of the lens barrel includes a lens barrel object-side opening. A back end portion of the lens barrel includes a lens barrel image-side opening. An inner diameter of the lens barrel object-side opening is less than an inner diameter of the lens barrel image-side opening. The outer cover is cone-shaped and is disposed on an outer surface of the front end portion of the lens barrel. The outer cover includes an outer cover object-side opening and an outer cover image-side opening. A maximum outer diameter of the outer cover object-side opening is less than a maximum outer diameter of the outer cover image-side opening. A length of the outer cover on an optical axis is greater than 40% of a length of the lens barrel on the optical axis.

Abstract: An optical imaging lens includes an outer cover, a lens barrel, a colloid, and a plurality of lens elements disposed in the lens barrel. In particular, the outer cover is cone-shaped and has a light transmittance of less than 10%, and is disposed at an outer surface of a front end portion of the lens barrel. The front end portion of the lens barrel has a lens barrel annular plane perpendicular to an optical axis and located on a reference plane. The colloid is disposed between the outer cover and the lens barrel. The colloid is a solid at less than 90° C. and is in a softened state when heated again to 50° C. to 75° C.

Abstract: An array substrate includes: pixel units, scan signal lines and drive signal lines, and reset signal lines. The pixel units include first pixel units in and second pixel units. Some first pixel units and some second pixel units are arranged in one row and connected via one first scan signal line and one first drive signal line. Some first pixel units and some second pixel units are arranged in one column and are connected via one first reset signal line. A resistance compensation unit is connected to each signal line. At least part of a projection overlapping region of an extension line of the first scan signal line overlapping with an extension line of the first drive signal line forms a capacitance compensation unit connected to each signal line.

Abstract: The present invention discloses a shock wave balloon dilation catheter comprising a balloon and a dilation catheter. The balloon includes a blood flow passage on its outer circumference and/or interior, extending axially and penetrating through the outer circumference and/or center. A shock wave generator is arranged within the balloon chamber, where conductive fluid can be introduced. The distal end of the dilation catheter passes through or into the balloon and is sealedly connected to the balloon. A fluid passage in the catheter communicates with the balloon chamber, and the shock wave generator is fixed to the portion of the catheter within the balloon. The dilation catheter is provided with a guide wire lumen. The present invention further discloses a shock wave balloon dilation catheter for tricuspid valve openings, which designed to avoid blood flow blockage and reduce the hemodynamic impact during the procedure, enhancing safety and treatment effectiveness.

Abstract: An autonomous mobile robot transporting material in a manufacturing environment includes a chassis including a main body that defines two opposing sides, a front side, a rear side, and a lower surface that faces a terrain that the autonomous mobile robot traverses. The main body defines two or more channels disposed along the lower surface of the main body that are each shaped to receive an arm of a lifting mechanism. The autonomous mobile robot also includes a track drive system including two drive systems that are each attached to one of the two opposing sides of the chassis. Each drive system includes a track, a pair of driven wheels, and one or more idler wheels disposed between the pair of driven wheels, where the track engages the pair of driven wheels and the idler wheel.

Abstract: This disclosure provides a back contact solar cell and a method for manufacturing a back contact solar cell. In one example, a back contact solar cell includes a silicon substrate having a back surface comprising first regions and second regions that are alternately distributed, a first doped semiconductor layer formed on a first region of the back surface, a groove structure formed on a second region of the back surface, wherein an end portion of the first doped semiconductor layer adjacent to the second region extends to be suspended over the groove structure, and a second doped semiconductor layer formed on a portion of the groove structure, wherein a surface portion of the second doped semiconductor layer does not extend to be suspended over a remaining portion of the groove structure the second doped semiconductor layer is not formed on.

Abstract: A cellular base station antenna assembly includes: a telecommunications antenna with plurality of first communication ports mounted on a rear surface thereof; a remote radio unit mounted to the antenna having a plurality of second communication ports on a lower surface thereof; and an adapter configured to connect the remote radio unit to the antenna, the adapter including a housing, a first clustered connector that includes a plurality of individual first connectors, the first clustered connector being mounted on a lower portion of the housing, the adapter further including a plurality of second connectors mounted on an upper surface of the housing, each of the first connectors being connected with a respective second connector. Each of the second connectors is mated with a respective second communication port, and each of the first connectors is mated with a respective first communication port.

Abstract: The invention provides computer-readable media (CRM) configured to adapt a text-to-image (T2I) diffusion model for video editing by using spectral decomposition to achieve controlled spectral shifts in the model's weights. This CRM maintains constant singular vectors while selectively adjusting singular values according to a text prompt. A spectral shift regularizer constrains these adjustments, particularly limiting changes to larger singular values to ensure minimal deviation from the original model's structure. This approach enables efficient, prompt-driven video editing by modifying specific visual elements according to the prompt while preserving original video context. By employing selective spectral adjustments, the CRM significantly reduces adaptation time and computational demands, making it suitable for real-time, resource-sensitive applications such as dynamic video editing in streaming services.

Abstract: A fabricating method of low voltage, middle voltage and high voltage transistors includes providing a substrate. A first active region, a second active region and a third active region are respectively disposed in a low voltage region, a middle voltage region and a high voltage region. Two second source/drain regions is embedded in the second active region. Two third source/drain regions are disposed in the third active region. A middle voltage gate dielectric material layer is formed to cover the first active region, the second active region and the two third source/drain regions. Later, a patterned mask is formed to expose all the middle voltage gate dielectric material layer disposed in the first active region, on the two second source/drain regions, and on the two third source/drain regions. Next, the exposed middle voltage gate dielectric material layer is removed completely by taking the patterned mask as a mask.

Abstract: In some embodiments, methods for fabricating micro-LEDs may include bonding a semiconductor wafer to a Complementary Metal-Oxide-Semiconductor (CMOS) wafer via one or more adhesive layers, etching the LED epilayer and the one or more adhesive layers to form a plurality of micro-LED structures, and fabricating an electrode layer on the plurality of microLED structures. The semiconductor wafer may include an LED epilayer that may include an n-GaN layer, a p-GaN layer, and an active layer positioned between the n-GaN layer and the p-GaN layer. The stress release pattern may include a plurality of geometrical shapes (e.g., squares, rectangles, hexagons, rings, etc.) that may facilitate the release of mechanical stresses induced during the subsequent processing of the semiconductor wafer and/or the fabrication of the micro-LEDs.

Abstract: A power converter and a data collector. A power line communication (PLC) chip in the power converter can transmit a data signal on a first frequency band, and transmit a control signal on a second frequency band. Signals of different types can be transmitted on the first frequency band and the second frequency band, and the first frequency band and the second frequency band do not overlap each other. Therefore, interference between the signals of different types can be effectively avoided, and simultaneous transmission of the signals of different types can be implemented. This not only effectively enhances flexibility of signal transmission, but also effectively avoids a transmission delay caused by a transmission conflict between the signals of different types in the PLC system, ensuring high timeliness for the data collector to perform data query and scheduling control on the power converter.

Abstract: Disclosed is a method for implementing a rate-adaptive multi-input single-output visible light communication system, where the visible light communication system includes transmit ends and a receiver end. Binary transmission data streams corresponding to the transmit ends are respectively modulated onto a constellation diagram, and all transmit constellations are loaded onto a signal generator after subjected to digital signal processing, the signal generator outputs analog signals, which are respectively amplified by electrical amplifiers, and then coupled to direct current by biasers, and the light sources corresponding to the transmit ends convert the electric signals obtained by coupling into optical signals.

Abstract: A photonic assembly includes: an electronic integrated circuits (EIC) die including a semiconductor substrate, semiconductor devices located on a horizontal surface of the semiconductor substrate, first dielectric material layers embedding first metal interconnect structures, a dielectric pillar structure vertically extending through each layer selected from the first dielectric material layers, a first bonding-level dielectric layer embedding first metal bonding pads, wherein a first subset of the first metal bonding pads has an areal overlap with the dielectric pillar structure in a plan view; and a photonic integrated circuits (PIC) die including waveguides, photonic devices, second dielectric material layers embedding second metal interconnect structures, a second bonding-level dielectric layer embedding second metal bonding pads, wherein the second metal bonding pads are bonded to the first metal bonding pads.