Patents by Inventor Chen Fan

Chen Fan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240362778
    Abstract: A rapid and automatic virus imaging and analysis system includes (i) electron optical sub-systems (EOSs), each of which has a large field of view (FOV) and is capable of instant magnification switching for rapidly scanning a virus sample; (ii) sample management sub-systems (SMSs), each of which automatically loads virus samples into one of the EOSs for virus sample scanning and then unloads the virus samples from the EOS after the virus sample scanning is completed; (iii) virus detection and classification sub-systems (VDCSs), each of which automatically detects and classifies a virus based on images from the EOS virus sample scanning; and (iv) a cloud-based collaboration sub-system for analyzing the virus sample scanning images, storing images from the EOS virus sample scanning, and storing and analyzing machine data associated with the EOSs, the SMSs, and the VDCSs.
    Type: Application
    Filed: July 8, 2024
    Publication date: October 31, 2024
    Applicant: BORRIES PTE. LTD.
    Inventors: Zhongwei Chen, Xiaoming Chen, Daniel Tang, Liang-Fu Fan
  • Publication number: 20240349575
    Abstract: Provided are a cover plate, a display module, and a display device. The cover plate includes: a cover plate base (10) and an anti-fingerprint film layer (11) disposed on a side of the cover plate base (10); and an electrostatic transfer layer (20) disposed between the cover plate base (10) and the anti-fingerprint film layer (11) or disposed on a side of the cover plate base (10) facing away from the anti-fingerprint film layer (11).
    Type: Application
    Filed: July 31, 2023
    Publication date: October 17, 2024
    Applicants: Chengdu BOE Optoelectronics Technology Co., Ltd., BOE Technology Group Co., Ltd.
    Inventors: Xi Zhu, Chen Li, Qiang Tang, Xu Fan, Lei Zhang
  • Publication number: 20240334623
    Abstract: This disclosure is directed to a case of an electronic device having a box, an elastic arm, a first fastening structure, a second fastening structure, and a magnet. The box has a first housing and a second housing closed with the first housing. The elastic arm is arranged in the first housing, the elastic arm is located at one side of the first housing, and at least a portion of the elastic arm is extended beyond an edge of the first housing. The first fastening structure is disposed on the elastic arm and located beyond the edge of the first housing. The second fastening structure is arranged on an internal surface at one side of the second housing, and the first fastening structure and the second fastening structure are buckled with each other. The magnet is arranged on the spring arm.
    Type: Application
    Filed: June 9, 2023
    Publication date: October 3, 2024
    Inventor: Chen-Fan LIN
  • Publication number: 20240327265
    Abstract: A large-scale in-situ dewatering treatment method and device for lake sludge are provided. The large-scale in-situ dewatering treatment method for lake sludge includes: step S1, sludge excavation: excavating sludge from a lake and transporting the sludge to a detention pond; step S2, in-situ detention: filtering the sludge in the detention pond to obtain filtered sludge; step S3, dewatering: transporting the filtered sludge to a dewatering workshop and performing deep dewatering on the filtered sludge to obtain mud blocks and wastewater; and step S4, environmental protection treatment: using the mud blocks to build an island near a dredging platform in the lake. The large-scale in-situ dewatering treatment method for lake sludge not only solves the problems of difficulty in selecting a temporary sludge disposal site and high capital investment costs in a traditional lake dredging operation, but also reduces the transportation cost of transporting sludge to a land.
    Type: Application
    Filed: March 28, 2024
    Publication date: October 3, 2024
    Inventors: Ziwu Fan, Rui Ding, Chen Xie, Dandan Li, Hao Liu, Yu Chen, Ji Wu, Xiaoyu Wang, Kai Yu, Qiupeng Cai
  • Patent number: 12107147
    Abstract: Semiconductor devices and methods of forming the same include forming dummy gate spacers in a trench in a semiconductor substrate. A dummy gate is formed in the trench. An exposed dummy gate spacer is replaced with a sacrificial spacer. A cap layer is formed over the dummy gate. The cap layer is etched to expose the dummy gate. The sacrificial spacer is replaced with an isolation dielectric spacer. The dummy gate is replaced with a conductor.
    Type: Grant
    Filed: December 15, 2021
    Date of Patent: October 1, 2024
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Huimei Zhou, Kangguo Cheng, Su Chen Fan, Miaomiao Wang
  • Publication number: 20240314973
    Abstract: An apparatus is described that includes an immersion bath chamber and a cover that is to seal the immersion bath chamber. An apparatus is described that includes an immersion bath chamber and an installable/removable transfer member. The installable/removable transfer member has fluidic connectors designed to couple to respective warmed fluid flow output ports of pluggable units to be cooled in the immersion bath chamber and having respective backplane interface designs. An apparatus is described that includes an immersion bath chamber and an overflow chamber. The overflow chamber is to receive an overflow of liquid coolant from the immersion bath chamber, wherein a first exit flow channel from the overflow chamber is coupled to a second exit fluid flow channel from the immersion bath chamber through a valve, wherein, an opening of the valve is controllable to vary a gravitational fluid flow within the immersion bath chamber.
    Type: Application
    Filed: May 22, 2024
    Publication date: September 19, 2024
    Inventors: Chen ZHANG, Xiang QUE, Yang YAO, Yuehong FAN, Guangying ZHANG, Liguang DU, Shaorong ZHOU, Chuanlou WANG, Yingqiong BU, Yue YANG
  • Publication number: 20240298643
    Abstract: Provided are a benzimidazole compound as represented by formula (I) or a salt thereof, a preparation method therefor, and the use thereof. The benzimidazole compound or the salt thereof has excellent insecticidal and acaricidal effects, and can display acaricidal effects especially when same is used at a low concentration.
    Type: Application
    Filed: February 22, 2022
    Publication date: September 12, 2024
    Inventors: Laijun ZHANG, Yu LIU, Ranjin LIU, Yingrui CUI, Yuqi WANG, Shiling WANG, Ruijie FENG, Zhanru ZHAO, Xinhao WEI, Yahui LI, Yaoyao DU, Chen GONG, Yunxiao SUN, Shien FAN, Qiangqiang GUO, Wei GUO, Jie GAO, Yingshuai LIU, Ning LI
  • Publication number: 20240296774
    Abstract: A brightness adjustment method and a brightness adjustment device of a display panel and a display device are provided. The brightness adjustment method of the display panel including a plurality of sub-pixels includes acquiring grayscale data received by the display panel; performing a data processing process on the grayscale data and at least inserting a plurality of transitional grayscales between a 0-order grayscale and a 1st-order grayscale to form target grayscale data; and adjusting the brightness of the plurality of sub-pixels based on the target grayscale data.
    Type: Application
    Filed: May 9, 2023
    Publication date: September 5, 2024
    Inventors: Chen ZHONG, Meng LAI, Qiang CHEN, Jiajing LI, Jingxiong ZHOU, Ying SUN, Liujing FAN, Zhiqiang XIA
  • Patent number: 12082510
    Abstract: A semiconductor device comprises a first conductive feature on a semiconductor substrate, a bottom electrode on the first conductive feature, a magnetic tunnel junction (MTJ) stack on the bottom electrode, and a top electrode on the MTJ stack. A spacer contacts a sidewall of the top electrode, a sidewall of the MTJ stack, and a sidewall of the bottom electrode. A conductive feature contacts the top electrode.
    Type: Grant
    Filed: July 16, 2021
    Date of Patent: September 3, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chih-Fan Huang, Kai-Wen Cheng, Chen-Chiu Huang, Dian-Hau Chen, Yen-Ming Chen
  • Publication number: 20240282380
    Abstract: An operation method for a memory device is provided. A memory block of the memory device includes an array of memory cells including cell strings and cell pages. Serially numbered and arranged bit lines are connected to the cell strings, respectively. Serially numbered and arranged word lines are connected to the cell pages, respectively. The operation method includes: performing a batch writing to each of the cell pages, such that the memory cells in each cell page are respectively grouped as an earlier written memory cell or a later written memory cell, depending on the connected bit line is either even-numbered or odd-numbered. Each cell page has a respective write sequence. In terms of write sequence, each cell page is identical with one of 2 nearest cell pages, and opposite to the other of the 2 nearest cell pages.
    Type: Application
    Filed: May 3, 2023
    Publication date: August 22, 2024
    Applicant: Winbond Electronics Corp.
    Inventors: Yi-Chen Fan, Chieh-Yen Wang
  • Patent number: 12066491
    Abstract: A device and method for detecting an inter-turn electromagnetic pulse vibration wave characteristic of a turbogenerator rotor winding are provided. A signal source and a time sequence control circuit generate a high-potential abrupt electric field; circularly polarized electromagnetic waves generated by a parasitic inductive power supply and symmetrically deflecting by 180° are respectively coupled to a positive electrode and a negative electrode clockwise or counter-clockwise; a first turn on the positive electrode and a first turn on the negative electrode are mutually induced; as time goes by, energy is returned to the parasitic inductive power supply, and is sequentially conducted to a second turn; the parasitic inductive power supply and the second turn further start feeding back energy to the first turn in circular polarization; all turns sequentially perform feedback and superposition one another stage by stage; and all coupling turns show sinusoidal waves with a same time constant.
    Type: Grant
    Filed: April 15, 2022
    Date of Patent: August 20, 2024
    Assignee: HANGZHOU HENUOVA TECHNOLOGY CO., LTD.
    Inventors: Yuewu Zhang, Kunpeng Tian, Qianyi Zhang, Weihua Zha, Hong Liu, Xiaohui Cao, Xueliang Wang, Dongbing Liu, Jiamin Li, Chicheng Liu, Zhen Lyu, Chen Fan, Miaoye Li, Wen Wei, Zirui Wang
  • Patent number: 12069322
    Abstract: Technologies relating to system and method of real-time video overlaying or superimposing display from multiple mutually synchronous cameras are disclosed. An example method of real-time video overlaying includes the steps of: synchronizing frame rates of a depth data, a face metadata, and a video data of a first camera video output captured by a first camera; determining a first depth between a user face and the first camera; using a cutoff depth to determine a user body contour; generating a binary mask of the user body contour based on the first depth and the cutoff depth; smoothing an edge of the binary mask; merging the binary mask with the first camera video output and generating a merged first camera video output; and overlaying the merged first camera video output onto a second camera video output.
    Type: Grant
    Filed: November 2, 2022
    Date of Patent: August 20, 2024
    Assignee: Loop Now Technologies, Inc.
    Inventors: Li Chen, Yang-Cheng Fan, Ting Kwan Luk, Xinshuo Zhang, WuHsi Li
  • Publication number: 20240260233
    Abstract: Heat pipes and vapor chambers that are components of a DIMM cooling assembly are described.
    Type: Application
    Filed: November 11, 2021
    Publication date: August 1, 2024
    Inventors: Ming Zhang, Yuehong Fan, Peng Wei, Chuanlou Wang, Rajiv K. Mongia, Guocheng Zhang, Yingqiong Bu, Berhanu Wondimu, Guixiang Tan, Xiang Que, Qing Jiang, Liu Yu, Wei-Ming Chu, Chen Zhang, Hao Zhou, Feng Qi, Catharina Biber, Devdatta Prakash Kulkarni, Xiang Li, Yechi Zhang
  • Publication number: 20240255573
    Abstract: A device and method for detecting an inter-turn electromagnetic pulse vibration wave characteristic of a turbogenerator rotor winding are provided. A signal source and a time sequence control circuit generate a high-potential abrupt electric field; circularly polarized electromagnetic waves generated by a parasitic inductive power supply and symmetrically deflecting by 180° are respectively coupled to a positive electrode and a negative electrode clockwise or counter-clockwise; a first turn on the positive electrode and a first turn on the negative electrode are mutually induced; as time goes by, energy is returned to the parasitic inductive power supply, and is sequentially conducted to a second turn; the parasitic inductive power supply and the second turn further start feeding back energy to the first turn in circular polarization; all turns sequentially perform feedback and superposition one another stage by stage; and all coupling turns show sinusoidal waves with a same time constant.
    Type: Application
    Filed: April 15, 2022
    Publication date: August 1, 2024
    Applicant: HANGZHOU HENUOVA TECHNOLOGY CO., LTD.
    Inventors: Yuewu ZHANG, Kunpeng TIAN, Qianyi ZHANG, Weihua ZHA, Hong LIU, Xiaohui CAO, Xueliang WANG, Dongbing LIU, Jiamin LI, Chicheng LIU, Zhen LYU, Chen FAN, Miaoye LI, Wen WEI, Zirui WANG
  • Publication number: 20240243067
    Abstract: Embodiments of the present application disclose a chip-on-film structure, a display device, and a spliced display device. The chip-on-film structure includes: a substrate having a first surface and a second surface oppositely disposed; a first circuit covering the first surface, wherein the first circuit includes a driving chip bonding area; a display panel bonding end disposed on the second surface; and a first conductive portion connected to the first circuit and the display panel bonding end respectively.
    Type: Application
    Filed: February 1, 2024
    Publication date: July 18, 2024
    Inventors: Yong FAN, CHEN-KE HSU
  • Patent number: 12040430
    Abstract: A micro light-emitting device includes a support structure with a cavity and at least one micro light-emitting element that includes a semiconductor structure accommodated by the cavity, at least one bridge connection member disposed on the semiconductor structure to interconnect the semiconductor structure and the support structure, and a protruding contact member disposed on at least one of the semiconductor structure and the bridge connection member and protruding therefrom to be configured to contact with a transfer means. The device is configured to contact with the transfer means at the protruding contact member of the element. A transfer method using the device is also disclosed.
    Type: Grant
    Filed: August 12, 2022
    Date of Patent: July 16, 2024
    Assignee: Xiamen San'an Optoelectronics Co., Ltd.
    Inventors: Shao-ying Ting, Junfeng Fan, Chia-en Lee, Chen-ke Hsu
  • Publication number: 20240203984
    Abstract: Semiconductor devices and methods of forming the same include a lower semiconductor device over a substrate, the lower semiconductor device having a first width. An upper semiconductor device is over the lower semiconductor device. The upper semiconductor device has a second width smaller than the first width. A dielectric structure is over the lower semiconductor device and has a first sidewall that faces the upper semiconductor device and a second sidewall that aligns vertically with a sidewall of the lower semiconductor device.
    Type: Application
    Filed: December 19, 2022
    Publication date: June 20, 2024
    Inventors: Su Chen Fan, Indira Seshadri, Jay William Strane, Stuart Sieg
  • Publication number: 20240178292
    Abstract: A semiconductor structure is presented including semiconductor layers of a first nanosheet stack, semiconductor layers of a second nanosheet stack formed over and having a stepped nanosheet formation with respect to the semiconductor layers of the first nanosheet stack, a first epitaxial growth formed adjacent the semiconductor layers of the first nanosheet stack, and a second epitaxial growth formed adjacent the semiconductor layers of the second nanosheet stack such that the second epitaxial growth has a stepped formation with respect to the first epitaxial growth. The second epitaxial growth has a volume greater than a volume of the first epitaxial growth.
    Type: Application
    Filed: November 28, 2022
    Publication date: May 30, 2024
    Inventors: Indira Seshadri, Su Chen Fan, Jay William Strane, Stuart Sieg, Shogo Mochizuki
  • Publication number: 20240162319
    Abstract: Embodiments of the invention include a stacked device having a first epitaxial region and a second epitaxial region vertically displaced from the first epitaxial region. The first epitaxial region comprising an asymmetric profile with a horizontal protrusion.
    Type: Application
    Filed: November 14, 2022
    Publication date: May 16, 2024
    Inventors: Su Chen Fan, Albert M. Young, Ruilong Xie, Prabudhya Roy Chowdhury, Jay William Strane
  • Publication number: 20240145473
    Abstract: A semiconductor device includes a first transistor and a first gate electrically coupled to the first transistor. A second transistor is positioned on top of the first transistor. A second gate is electrically coupled to the second transistor. A dielectric isolation layer is positioned between the first gate and the second gate. A first conductive contact is electrically coupled to the first gate. A second conductive contact is electrically coupled to the second gate. A control of the first gate through the first conductive contact is independent of a control of the second gate through the second conductive contact.
    Type: Application
    Filed: October 26, 2022
    Publication date: May 2, 2024
    Inventors: Tsung-Sheng Kang, Su Chen Fan, Jingyun Zhang, Ruqiang Bao, Son Nguyen