Abstract: A method for fabricating light emitting diode (LED) dice includes the steps of: providing a substrate, and forming a plurality of die sized semiconductor structures on the substrate. The method also includes the steps of providing a receiving plate having an elastomeric polymer layer, placing the substrate and the receiving plate in physical contact with an adhesive force applied by the elastomeric polymer layer, and performing a laser lift-off (LLO) process by directing a uniform laser beam through the substrate to the semiconductor layer at an interface with the substrate to lift off the semiconductor structures onto the elastomeric polymer layer. During the laser lift-off (LLO) process the elastomeric polymer layer functions as a shock absorber to reduce momentum transfer, and as an adhesive surface to hold the semiconductor structures in place on the receiving plate.

Abstract: A method for fabricating light emitting diode (LED) dice includes the steps of: providing a substrate, and forming a plurality of die sized semiconductor structures on the substrate. The method also includes the steps of providing a receiving plate having an elastomeric polymer layer, placing the substrate and the receiving plate in physical contact with an adhesive force applied by the elastomeric polymer layer, and performing a laser lift-off (LLO) process by directing a uniform laser beam through the substrate to the semiconductor layer at an interface with the substrate to lift off the semiconductor structures onto the elastomeric polymer layer. During the laser lift-off (LLO) process the elastomeric polymer layer functions as a shock absorber to reduce momentum transfer, and as an adhesive surface to hold the semiconductor structures in place on the receiving plate.

Abstract: A method for fabricating light emitting diode (LED) dice includes the steps of: providing a substrate, and forming a plurality of die sized semiconductor structures on the substrate. The method also includes the steps of providing a receiving plate having an elastomeric polymer layer, placing the substrate and the receiving plate in physical contact with an adhesive force applied by the elastomeric polymer layer, and performing a laser lift-off (LLO) process by directing a uniform laser beam through the substrate to the semiconductor layer at an interface with the substrate to lift off the semiconductor structures onto the elastomeric polymer layer. During the laser lift-off (LLO) process the elastomeric polymer layer functions as a shock absorber to reduce momentum transfer, and as an adhesive surface to hold the semiconductor structures in place on the receiving plate.

Abstract: A method for fabricating light emitting diode (LED) dice includes the steps of: providing a substrate, and forming a plurality of die sized semiconductor structures on the substrate. The method also includes the steps of providing a receiving plate having an elastomeric polymer layer, placing the substrate and the receiving plate in physical contact with an adhesive force applied by the elastomeric polymer layer, and performing a laser lift-off (LLO) process by directing a uniform laser beam through the substrate to the semiconductor layer at an interface with the substrate to lift off the semiconductor structures onto the elastomeric polymer layer. During the laser lift-off (LLO) process the elastomeric polymer layer functions as a shock absorber to reduce momentum transfer, and as an adhesive surface to hold the semiconductor structures in place on the receiving plate.

Abstract: A packaged LED device comprising: a pad-extended LED chip comprising: at least one LED chip having a substrate, a first semiconductor layer, an active layer and a second semiconductor layer; a first pad electrically connected to the first type semiconductor layer and a second pad electrically connected to the second type semiconductor layer; and a first extended metal layer connected to the first pad and a second extended metal layer connected to the second pad.

Abstract: Disclosed is a color emissive LED array having a substantially flat backplane which has circuitry. The color emissive LED array includes a plurality of multi thickness color emissive LED units disposed in an array on the substantially flat backplane; The plurality of multi thickness color emissive LED units have a thickness of the first color emissive LED unit is less than a thickness of the second color emissive LED unit and less than a thickness of the third color emissive LED unit. Meanwhile, the substantially flat backplane having circuitry has one or more anode and one or more cathode. Further, the array is attached to the substantially flat backplane having circuitry by using a jointing layer.

Abstract: A method for fabricating light emitting diode (LED) dice includes the steps of: providing a substrate [30], and forming a plurality of die sized semiconductor structures [32] on the substrate [30]. The method also includes the steps of providing a receiving plate [42] having an elastomeric polymer layer [44], placing the substrate [30] and the receiving plate [42] in close proximity with a gap [101] therebetween, and performing a laser lift-off (LLO) process by directing a uniform laser beam through the substrate [30] to the semiconductor layer [50] at an interface with the substrate [30] to lift off the semiconductor structures [32] through the gap [101] onto the elastomeric polymer layer [44]. During the laser lift-off (LLO) process the elastomeric polymer layer [44] functions as a shock absorber to reduce momentum transfer, and as an adhesive surface to hold the semiconductor structures [32] in place on the receiving plate [42].

Abstract: A method for fabricating light emitting diode (LED) dice includes the steps of: providing a substrate, and forming a plurality of die sized semiconductor structures on the substrate. The method also includes the steps of providing a receiving plate having an elastomeric polymer layer, placing the substrate and the receiving plate in physical contact with an adhesive force applied by the elastomeric polymer layer, and performing a laser lift-off (LLO) process by directing a uniform laser beam through the substrate to the semiconductor layer at an interface with the substrate to lift off the semiconductor structures onto the elastomeric polymer layer. During the laser lift-off (LLO) process the elastomeric polymer layer functions as a shock absorber to reduce momentum transfer, and as an adhesive surface to hold the semiconductor structures in place on the receiving plate.

Abstract: A method for fabricating semiconductor light emitting devices (LEDs) includes forming a plurality of light emitting diode (LED) structures having sidewall P-N junctions on a growth substrate, and forming an isolation layer on the light emitting diode (LED) structures having corners at intersections of the epitaxial structures with the growth substrate. The method also includes forming an etchable covering channel layer on the isolation layer, forming a patterning protection layer on the covering channel layer, forming etching channels in the covering channel layer using a first etching process, and removing the corners of the isolation layer by etching the isolation layer using a second etching process. Following the second etching process the isolation layer covers the sidewall P-N junctions. The method can also include bonding the growth substrate to a carrier and separating the growth substrate from the light emitting diode (LED) structures using a laser lift off (LLO) process.

Abstract: A method for fabricating light emitting diode (LED) dice includes the steps of: providing a substrate, and forming a plurality of die sized semiconductor structures on the substrate. The method also includes the steps of providing a receiving plate having an elastomeric polymer layer, placing the substrate and the receiving plate in physical contact with an adhesive force applied by the elastomeric polymer layer, and performing a laser lift-off (LLO) process by directing a uniform laser beam through the substrate to the semiconductor layer at an interface with the substrate to lift off the semiconductor structures onto the elastomeric polymer layer. During the laser lift-off (LLO) process the elastomeric polymer layer functions as a shock absorber to reduce momentum transfer, and as an adhesive surface to hold the semiconductor structures in place on the receiving plate.

Abstract: A method for fabricating light emitting diode (LED) dice includes the steps of: providing a substrate, and forming a plurality of die sized semiconductor structures on the substrate. The method also includes the steps of providing a receiving plate having an elastomeric polymer layer, placing the substrate and the receiving plate in physical contact with an adhesive force applied by the elastomeric polymer layer, and performing a laser lift-off (LLO) process by directing a uniform laser beam through the substrate to the semiconductor layer at an interface with the substrate to lift off the semiconductor structures onto the elastomeric polymer layer. During the laser lift-off (LLO) process the elastomeric polymer layer functions as a shock absorber to reduce momentum transfer, and as an adhesive surface to hold the semiconductor structures in place on the receiving plate.

Abstract: A color emissive LED array comprising a backplane and a plurality of color emissive LED units disposed in an array on the backplane, whereas the thickness of a first color emissive LED unit is less than the thickness of a second color emissive LED unit and less than the thickness of the third color emissive LED unit; wherein the color emissive LED units is formed by at least one of vertical configuration structure or flip chip configuration LED structure.

Abstract: A semiconductor continuous array layer comprising: an array of multiple semiconductor units; a sidewall of each semiconductor unit is surrounded by a semi-cured material or a cured material connecting the semiconductor units together to form a semiconductor continuous array; wherein multiple voids or air gaps are enclosed by the semi-cured material or the cured material within the semiconductor continuous array or around the edge of the semiconductor continuous array.

Abstract: A structure of a semiconductor array comprises multiple a backplane driver, wherein the backplane driver having a first surface and a second surface; a plurality of compound semiconductor light emitting unit disposed in an array on the first surface of the backplane driver having a gap between any two adjacent ones, wherein the each compound semiconductor light emitting unit having a first surface and a second surface, wherein the second surface of the each compound semiconductor light emitting unit having a cathode and an anode, wherein the cathode and the anode of the each compound semiconductor light emitting unit electrically connected to the first surface of the backplane driver, and wherein the cathode and the anode of the each compound semiconductor light emitting unit are separated from each other from the adjacent electrodes of the adjacent compound semiconductor light emitting units; and a polymer layer disposed above the first surface of the each compound semiconductor light emitting unit.

Abstract: A semiconductor component for fabricating semiconductor structures includes a plate having an elastomeric polymer layer thereon and at least one semiconductor structure adhesively attached to the elastomeric polymer layer. A semiconductor structure includes a first semiconductor layer and a second semiconductor layer with an active layer therebetween. The semiconductor structure also includes a plurality of mesas including at least one shorting mesa and at least one non-shorting mesa physically connected to the first semiconductor layer. A method for fabricating semiconductor structures includes the steps of: forming a plurality of semiconductor layer structures on the substrate, forming an elastomeric polymer layer on a receiving plate and attaching the elastomeric polymer layer to the semiconductor structures, and separating the semiconductor structures from the substrate with the semiconductor structures attached to the receiving plate.

Abstract: A method for fabricating light emitting diode (LED) dice includes the steps of: providing a substrate, and forming a plurality of die sized semiconductor structures on the substrate. The method also includes the steps of providing a receiving plate having an elastomeric polymer layer, placing the substrate and the receiving plate in physical contact with an adhesive force applied by the elastomeric polymer layer, and performing a laser lift-off (LLO) process by directing a uniform laser beam through the substrate to the semiconductor layer at an interface with the substrate to lift off the semiconductor structures onto the elastomeric polymer layer. During the laser lift-off (LLO) process the elastomeric polymer layer functions as a shock absorber to reduce momentum transfer, and as an adhesive surface to hold the semiconductor structures in place on the receiving plate.

Abstract: A structure of a semiconductor array comprises multiple semiconductor units, an isolation layer and a decomposed or buffer unit. Multiple semiconductor units combined the semiconductor array. The isolation layer coated each semiconductor unit. The decomposed or buffer unit coated the isolation layer and filled between each semiconductor unit to enhance structure of the semiconductor units. Wherein, the isolation layer protected by edge of the semiconductor units and the decomposed or buffer unit.

Abstract: The invention discloses a light emitting array structure.

Abstract: A high-brightness vertical light emitting diode (LED) device includes an outwardly located metal electrode having a low illumination side and a high illumination side. The LED device is formed by: forming the metal electrode on an edge of a surface of a LED epitaxy structure using a deposition method, such as physical vapor deposition (PVD), chemical vapor deposition (CVD), evaporation, electro-plating, or any combination thereof; and then performing a packaging process. The composition of the LED may be a nitride, a phosphide or an arsenide. The LED has the following advantages: improving current spreading performance, reducing light-absorption of the metal electrode, increasing brightness, increasing efficiency, and thereby improving energy efficiency. The metal electrode is located on the edge of the device and on the light emitting side. The metal electrode has two side walls, among which one side wall can receive more emission light from the device in comparison with the other one.

Abstract: The invention discloses a semiconductor structure, processing light signal, the semiconductor structure comprising: a first type semiconductor layer; a second type semiconductor layer; an active layer located between the first type semiconductor layer and the second type semiconductor layer; a reflector covered surfaces of the first type semiconductor layer and the second type semiconductor layer; a first pad disposed on a top surface of the reflector which is covered the first type semiconductor layer; a second pad disposed on the top surface of the reflector or second type semiconductor layer; an aperture disposed on the top surface of the first type semiconductor layer and passed through the reflector; and a light collection module disposed around the aperture or covered a top surface of the reflector.