Patents by Inventor Chen-Fu Chu

Chen-Fu Chu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210273146
    Abstract: A color emissive LED array comprising a backplane and a plurality of color emissive LED units disposed in an array on the backplane, whereas the thickness of a first color emissive LED unit is less than the thickness of a second color emissive LED unit and less than the thickness of the third color emissive LED unit; wherein the color emissive LED units is formed by at least one of vertical configuration structure or flip chip configuration LED structure.
    Type: Application
    Filed: April 10, 2021
    Publication date: September 2, 2021
    Inventor: Chen-Fu CHU
  • Patent number: 11005018
    Abstract: A semiconductor continuous array layer comprising: an array of multiple semiconductor units; a sidewall of each semiconductor unit is surrounded by a semi-cured material or a cured material connecting the semiconductor units together to form a semiconductor continuous array; wherein multiple voids or air gaps are enclosed by the semi-cured material or the cured material within the semiconductor continuous array or around the edge of the semiconductor continuous array.
    Type: Grant
    Filed: November 20, 2018
    Date of Patent: May 11, 2021
    Inventor: Chen-Fu Chu
  • Publication number: 20210125971
    Abstract: A structure of a semiconductor array comprises multiple a backplane driver, wherein the backplane driver having a first surface and a second surface; a plurality of compound semiconductor light emitting unit disposed in an array on the first surface of the backplane driver having a gap between any two adjacent ones, wherein the each compound semiconductor light emitting unit having a first surface and a second surface, wherein the second surface of the each compound semiconductor light emitting unit having a cathode and an anode, wherein the cathode and the anode of the each compound semiconductor light emitting unit electrically connected to the first surface of the backplane driver, and wherein the cathode and the anode of the each compound semiconductor light emitting unit are separated from each other from the adjacent electrodes of the adjacent compound semiconductor light emitting units; and a polymer layer disposed above the first surface of the each compound semiconductor light emitting unit.
    Type: Application
    Filed: January 2, 2021
    Publication date: April 29, 2021
    Inventors: Chen-Fu CHU, Chen-Hsien CHU
  • Publication number: 20210066547
    Abstract: A semiconductor component for fabricating semiconductor structures includes a plate having an elastomeric polymer layer thereon and at least one semiconductor structure adhesively attached to the elastomeric polymer layer. A semiconductor structure includes a first semiconductor layer and a second semiconductor layer with an active layer therebetween. The semiconductor structure also includes a plurality of mesas including at least one shorting mesa and at least one non-shorting mesa physically connected to the first semiconductor layer. A method for fabricating semiconductor structures includes the steps of: forming a plurality of semiconductor layer structures on the substrate, forming an elastomeric polymer layer on a receiving plate and attaching the elastomeric polymer layer to the semiconductor structures, and separating the semiconductor structures from the substrate with the semiconductor structures attached to the receiving plate.
    Type: Application
    Filed: July 23, 2020
    Publication date: March 4, 2021
    Applicant: TSLC CORPORATION
    Inventors: Trung Tri Doan, CHEN-FU CHU, SHIH-KAI CHAN, DAVID TRUNG DOAN, YI-FENG SHIH
  • Publication number: 20210066541
    Abstract: A method for fabricating light emitting diode (LED) dice includes the steps of: providing a substrate, and forming a plurality of die sized semiconductor structures on the substrate. The method also includes the steps of providing a receiving plate having an elastomeric polymer layer, placing the substrate and the receiving plate in physical contact with an adhesive force applied by the elastomeric polymer layer, and performing a laser lift-off (LLO) process by directing a uniform laser beam through the substrate to the semiconductor layer at an interface with the substrate to lift off the semiconductor structures onto the elastomeric polymer layer. During the laser lift-off (LLO) process the elastomeric polymer layer functions as a shock absorber to reduce momentum transfer, and as an adhesive surface to hold the semiconductor structures in place on the receiving plate.
    Type: Application
    Filed: August 7, 2020
    Publication date: March 4, 2021
    Applicants: SemiLEDs Corporation, SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Chen-Fu Chu, Shih-Kai CHAN, Yi-Feng SHIH, David Trung DOAN, Trung Tri DOAN, Yoshinori OGAWA, Kohei OTAKE, Kazunori KONDO, Keiji OHORI, Taichi KITAGAWA, Nobuaki MATSUMOTO, Toshiyuki OZAI, Shuhei UEDA
  • Patent number: 10910350
    Abstract: A structure of a semiconductor array comprises multiple semiconductor units, an isolation layer and a decomposed or buffer unit. Multiple semiconductor units combined the semiconductor array. The isolation layer coated each semiconductor unit. The decomposed or buffer unit coated the isolation layer and filled between each semiconductor unit to enhance structure of the semiconductor units. Wherein, the isolation layer protected by edge of the semiconductor units and the decomposed or buffer unit.
    Type: Grant
    Filed: May 22, 2015
    Date of Patent: February 2, 2021
    Inventors: Chen-Fu Chu, Chen-Hsien Chu
  • Publication number: 20200403107
    Abstract: The invention discloses a light emitting array structure.
    Type: Application
    Filed: August 31, 2020
    Publication date: December 24, 2020
    Inventor: Chen-Fu CHU
  • Patent number: 10862013
    Abstract: A high-brightness vertical light emitting diode (LED) device includes an outwardly located metal electrode having a low illumination side and a high illumination side. The LED device is formed by: forming the metal electrode on an edge of a surface of a LED epitaxy structure using a deposition method, such as physical vapor deposition (PVD), chemical vapor deposition (CVD), evaporation, electro-plating, or any combination thereof; and then performing a packaging process. The composition of the LED may be a nitride, a phosphide or an arsenide. The LED has the following advantages: improving current spreading performance, reducing light-absorption of the metal electrode, increasing brightness, increasing efficiency, and thereby improving energy efficiency. The metal electrode is located on the edge of the device and on the light emitting side. The metal electrode has two side walls, among which one side wall can receive more emission light from the device in comparison with the other one.
    Type: Grant
    Filed: April 24, 2013
    Date of Patent: December 8, 2020
    Assignee: SemiLEDs Optoelectronics Co., Co., Ltd.
    Inventors: Wen-Huang Liu, Li-Wei Shan, Chen-Fu Chu
  • Patent number: 10797188
    Abstract: The invention discloses a semiconductor structure, processing light signal, the semiconductor structure comprising: a first type semiconductor layer; a second type semiconductor layer; an active layer located between the first type semiconductor layer and the second type semiconductor layer; a reflector covered surfaces of the first type semiconductor layer and the second type semiconductor layer; a first pad disposed on a top surface of the reflector which is covered the first type semiconductor layer; a second pad disposed on the top surface of the reflector or second type semiconductor layer; an aperture disposed on the top surface of the first type semiconductor layer and passed through the reflector; and a light collection module disposed around the aperture or covered a top surface of the reflector.
    Type: Grant
    Filed: September 28, 2015
    Date of Patent: October 6, 2020
    Inventor: Chen-Fu Chu
  • Publication number: 20190097103
    Abstract: A semiconductor continuous array layer comprising: an array of multiple semiconductor units; a sidewall of each semiconductor unit is surrounded by a semi-cured material or a cured material connecting the semiconductor units together to form a semiconductor continuous array; wherein multiple voids or air gaps are enclosed by the semi-cured material or the cured material within the semiconductor continuous array or around the edge of the semiconductor continuous array.
    Type: Application
    Filed: November 20, 2018
    Publication date: March 28, 2019
    Inventor: Chen-Fu CHU
  • Patent number: 10205055
    Abstract: The invention discloses a light engine array having at least an anode and a cathode comprising: a first type semiconductor layer; an active layer; and a second type semiconductor layer; a cathode electrode has a conductive metal layer in electrical contact with a portion of the first type semiconductor layer, and the second type semiconductor layer to form a short circuit structure in a common cathode region; and an anode electrode has the conductive metal layer and coupled to a portion of the first type semiconductor layer; wherein, the anode electrode is electrically isolated with the active layer and the second type semiconductor layer in a sub-pixel region.
    Type: Grant
    Filed: October 25, 2017
    Date of Patent: February 12, 2019
    Assignee: HIPHOTON CO., LTD.
    Inventors: Chen-Fu Chu, Chen-Hsien Chu
  • Patent number: 10170671
    Abstract: A method to fill the flowable material into the semiconductor assembly module gap regions is described. In an embodiment, multiple semiconductor units are formed on the substrate to create an array module; the array module is attached to a backplane having circuitry to form the semiconductor assembly module in which multiple gap regions are formed inside the semiconductor assembly module and edge gap regions are formed surround an edge of the assembly module; The flowable material is forced inside the gap regions by performing the high acting pressure environment and then cured to be a stable solid to form a robustness structure. A semiconductor convert module is formed by removing the substrate utilizing a substrate removal process. A semiconductor driving module is formed by utilizing a connecting layer on the semiconductor convert module. In one embodiment, a vertical light emitting diode semiconductor driving module is formed to light up the vertical LED array.
    Type: Grant
    Filed: May 24, 2017
    Date of Patent: January 1, 2019
    Inventor: Chen-Fu Chu
  • Publication number: 20180047876
    Abstract: The invention discloses a light engine array having at least an anode and a cathode comprising: a first type semiconductor layer; an active layer; and a second type semiconductor layer; a cathode electrode has a conductive metal layer in electrical contact with a portion of the first type semiconductor layer, and the second type semiconductor layer to form a short circuit structure in a common cathode region; and an anode electrode has the conductive metal layer and coupled to a portion of the first type semiconductor layer; wherein, the anode electrode is electrically isolated with the active layer and the second type semiconductor layer in a sub-pixel region.
    Type: Application
    Filed: October 25, 2017
    Publication date: February 15, 2018
    Inventors: CHEN-FU CHU, CHEN-HSIEN CHU
  • Publication number: 20170365755
    Abstract: A method to fill the flowable material into the semiconductor assembly module gap regions is described. In an embodiment, multiple semiconductor units are formed on the substrate to create an array module; the array module is attached to a backplane having circuitry to form the semiconductor assembly module in which multiple gap regions are formed inside the semiconductor assembly module and edge gap regions are formed surround an edge of the assembly module; The flowable material is forced inside the gap regions by performing the high acting pressure environment and then cured to be a stable solid to form a robustness structure. A semiconductor convert module is formed by removing the substrate utilizing a substrate removal process. A semiconductor driving module is formed by utilizing a connecting layer on the semiconductor convert module. In one embodiment, a vertical light emitting diode semiconductor driving module is formed to light up the vertical LED array.
    Type: Application
    Filed: May 24, 2017
    Publication date: December 21, 2017
    Inventor: Chen-Fu CHU
  • Patent number: 9831387
    Abstract: The invention discloses a light engine array comprises a multiple light engines arranged into an array, multiple dams located on a first surface of the light engines; and the dams combined a dam array.
    Type: Grant
    Filed: June 12, 2015
    Date of Patent: November 28, 2017
    Assignee: Hiphoton Co., Ltd.
    Inventors: Chen-Fu Chu, Chen-Hsien Chu
  • Patent number: 9343620
    Abstract: A method for fabricating a light emitting diode die includes the steps of providing a carrier substrate and forming an epitaxial structure on the carrier substrate including a first type semiconductor layer, a multiple quantum well (MQW) layer on the first type semiconductor layer configured to emit light, and a second type semiconductor layer on the multiple quantum well (MQW) layer. The method also includes the steps of forming a plurality of trenches through the epitaxial structure, forming a reflector layer on the second type semiconductor layer, forming a seed layer on the reflector layer and in the trenches, and forming a substrate on the seed layer having an area configured to protect the epitaxial structure.
    Type: Grant
    Filed: February 7, 2014
    Date of Patent: May 17, 2016
    Assignee: SemiLEDS Optoelectronics Co., Ltd.
    Inventors: Jiunn-Yi Chu, Chen-Fu Chu, Chao-Chen Cheng
  • Publication number: 20160020353
    Abstract: The invention discloses a semiconductor structure, processing light signal, the semiconductor structure comprising: a first type semiconductor layer; a second type semiconductor layer; an active layer located between the first type semiconductor layer and the second type semiconductor layer; a reflector covered surfaces of the first type semiconductor layer and the second type semiconductor layer; a first pad disposed on a top surface of the reflector which is covered the first type semiconductor layer; a second pad disposed on the top surface of the reflector or second type semiconductor layer; an aperture disposed on the top surface of the first type semiconductor layer and passed through the reflector; and a light collection module disposed around the aperture or covered a top surface of the reflector.
    Type: Application
    Filed: September 28, 2015
    Publication date: January 21, 2016
    Inventor: Chen-Fu CHU
  • Publication number: 20150362165
    Abstract: The invention discloses a light engine array comprises a multiple light engines arranged into an array, multiple dams located on a first surface of the light engines; and the dams combined a dam array.
    Type: Application
    Filed: June 12, 2015
    Publication date: December 17, 2015
    Inventors: Chen-Fu CHU, Chen-Hsien CHU
  • Publication number: 20150340346
    Abstract: A structure of a semiconductor array comprises multiple semiconductor units, an isolation layer and a decomposed or buffer unit. Multiple semiconductor units combined the semiconductor array. The isolation layer coated each semiconductor unit. The decomposed or buffer unit coated the isolation layer and filled between each semiconductor unit to enhance structure of the semiconductor units. Wherein, the isolation layer protected by edge of the semiconductor units and the decomposed or buffer unit.
    Type: Application
    Filed: May 22, 2015
    Publication date: November 26, 2015
    Inventor: Chen-Fu CHU
  • Patent number: 9130114
    Abstract: A vertical light emitting diode (VLED) die includes an epitaxial structure having a first-type confinement layer, an active layer on the first-type confinement layer configured as a multiple quantum well (MQW) configured to emit light, and a second-type confinement layer having a roughened surface. In a first embodiment, the roughened surface includes a pattern of holes with a depth (d) in a major surface thereof surrounded by a pattern of protuberances with a height (h) on the major surface. In a second embodiment, the roughened surface includes a pattern of primary protuberances surrounded by a pattern of secondary protuberances.
    Type: Grant
    Filed: May 16, 2013
    Date of Patent: September 8, 2015
    Assignee: SemiLEDS Optoelectronics Co., Ltd.
    Inventors: Chen-Fu Chu, Hao-Chung Cheng, Feng-Hsu Fan, Wen-Huang Liu, Chao-Chen Cheng, David Trung Doan, Yang Po Wen