Abstract: A semiconductor device includes a first stack structure, a second stack structure, and a third stack structure. Each of the stack structure includes semiconductor layers vertically spaced from one another. The first, second, and third stack structures all extend along a first lateral direction. The second stack structure is disposed between the first and third stack structures. The semiconductor device includes a first gate structure that extends along a second lateral direction and wraps around each of the semiconductor layers. The semiconductor layers of the first stack structure are coupled with respective source/drain structures. The semiconductor layers of the second stack structure are coupled with respective source/drain structures. The semiconductor layers of the third stack structure are coupled with a dielectric passivation layer.

Abstract: In an embodiment, a device includes: an interconnect structure including a first contact pad, a second contact pad, and an alignment mark; a light emitting diode including a cathode and an anode, the cathode connected to the first contact pad; an encapsulant encapsulating the light emitting diode; a first conductive via extending through the encapsulant, the first conductive via including a first seed layer, the first seed layer contacting the second contact pad; a second conductive via extending through the encapsulant, the second conductive via including a second seed layer, the first seed layer and the second seed layer including a first metal; and a hardmask layer between the second seed layer and the alignment mark, the hardmask layer including a second metal, the second metal different from the first metal.

Abstract: A method includes etching a semiconductor substrate to form a trench, with the semiconductor substrate having a sidewall facing the trench, and depositing a first semiconductor layer extending into the trench. The first semiconductor layer includes a first bottom portion at a bottom of the trench, and a first sidewall portion on the sidewall of the semiconductor substrate. The first sidewall portion is removed to reveal the sidewall of the semiconductor substrate. The method further includes depositing a second semiconductor layer extending into the trench, with the second semiconductor layer having a second bottom portion over the first bottom portion, and a second sidewall portion contacting the sidewall of the semiconductor substrate. The second sidewall portion is removed to reveal the sidewall of the semiconductor substrate.

Abstract: A semiconductor device includes a plurality of channel layers vertically separated from one another. The semiconductor device also includes an active gate structure comprising a lower portion and an upper portion. The lower portion wraps around each of the plurality of channel layers. The semiconductor device further includes a gate spacer extending along a sidewall of the upper portion of the active gate structure. The gate spacer has a bottom surface. Moreover, a dummy gate dielectric layer is disposed between the gate spacer and a topmost channel layer of plurality of channel layers. The dummy gate dielectric layer is in contact with a top surface of the topmost channel layer, the bottom surface of the gate spacer, and the sidewall of the gate structure.

Abstract: A method and apparatus for forming tungsten features in semiconductor devices is provided. The method includes exposing a top opening of a feature formed in a substrate to a physical vapor deposition (PVD) process to deposit a tungsten liner layer within the feature. The PVD process is performed in a first processing region of a first processing chamber and the tungsten liner layer forms an overhang portion, which partially obstructs the top opening of the feature. The substrate is transferred from the first processing region of the first processing chamber to a second processing region of a second processing chamber without breaking vacuum. The overhang portion is exposed to nitrogen-containing radicals in the second processing region to inhibit subsequent growth of tungsten along the overhang portion. The feature is exposed to a tungsten-containing precursor gas to form a tungsten fill layer over the tungsten liner layer within the feature.

Abstract: A method of fabricating a semiconductor device is disclosed. The method includes forming semiconductor fins on a substrate. A first dummy gate is formed over the semiconductor fins. A recess is formed in the first dummy gate, and the recess is disposed between the semiconductor fins. A dummy fin material is formed in the recess. A portion of the dummy fin material is removed to expose an upper surface of the first dummy gate and to form a dummy fin. A second dummy gate is formed on the exposed upper surface of the first dummy gate.

Abstract: A paddle racket, including: a frame body, including a frame wall and a handle connected with the frame wall, the frame wall defining a receiving space; a three-dimensional web core, disposed in the receiving space and circumferentially connected to the frame wall, including a plurality of channels disposed through the three-dimensional web core in a thickness direction of the three-dimensional web core; and two striking surface portions, disposed on two opposing sides of the three-dimensional web core and connected to the frame wall, each of the two striking surface portions including a plurality of through holes, the plurality of through holes corresponding to and being in communication with the plurality of channels.

Abstract: Methods and apparatus for forming a semiconductor structure, including depositing a doping stack having a first surface atop a high-k dielectric layer, wherein the doping stack includes at least one first metal layer having a first surface, at least one second metal layer comprising a first aluminum dopant and a first surface, wherein the second metal layer is atop the first surface of the first metal layer, and at least one third metal layer atop the first surface of the second metal layer; depositing an anneal layer atop the first surface of the doping stack; annealing the structure to diffuse at least the first aluminum dopant into the high-k dielectric layer; removing the anneal layer; and depositing at least one work function layer atop the first surface of the doping stack.

Abstract: Methods and apparatus for forming a semiconductor structure, including depositing a doping stack having a first surface atop a high-k dielectric layer, wherein the doping stack includes at least one first metal layer having a first surface, at least one second metal layer comprising a first aluminum dopant and a first surface, wherein the second metal layer is atop the first surface of the first metal layer, and at least one third metal layer atop the first surface of the second metal layer; depositing an anneal layer atop the first surface of the doping stack; annealing the structure to diffuse at least the first aluminum dopant into the high-k dielectric layer; removing the anneal layer; and depositing at least one work function layer atop the first surface of the doping stack.

Abstract: Described are methods of depositing a titanium aluminum nitride film on a substrate surface with a controlled amount of carbon. The methods include exposing a substrate surface to a titanium precursor, a nitrogen reactant and an aluminum precursor with purges of the unreacted titanium and aluminum precursors and unreacted nitrogen reactants between each exposure.

Abstract: Described are methods of depositing a titanium aluminum nitride film on a substrate surface with a controlled amount of carbon. The methods include exposing a substrate surface to a titanium precursor, a nitrogen reactant and an aluminum precursor with purges of the unreacted titanium and aluminum precursors and unreacted nitrogen reactants between each exposure.

Abstract: Automotive daytime running lights, includes a light source and reflecting plates arranged on a light path of the light source. A substrate is arranged near the reflecting plates. A plurality of reflecting cups is formed on a surface of the substrate. Every reflecting plate faces a corresponding reflecting cup. The reflecting plates can rotate around light source to change the light exiting from the light source. The invention uses a laser source with reflecting plates to make the automotive daytime running lights have high visibility and be aesthetic in appearance.

Abstract: An optical coupling lens includes main section, beam splitting section, first lens, second lens and third lens. A first groove is formed in the main section. A second groove is formed in the first groove. The beam splitting section includes a first total reflecting surface and a second total reflecting surface. A dihedral-angle between the first total reflecting surface and the second total reflecting surface is predetermined. The first lens is defined in the first groove. The first lens includes a beam splitter. The beam splitter includes a first light emitting surface. The first light emitting surface is connected to the first total reflecting surface. The second lens is defined in the second groove. The second lens is corresponding to the first lens. The third lens defined in the second groove. The third lens is corresponding to the second total reflecting surface.

Abstract: A vehicle lamp includes a light bar, a plurality of circuit boards, a plurality of light emitting diode (LED) elements and a heat dissipating structure. The light bar has an annular top surface and an annular bottom surface. A coupling portion is formed on the bottom surface of the light bar. The LED elements are arranged on the circuit board. Light emitted from the LED elements are incident into the light bar through the coupling portion. The heat dissipating structure is coupled to the light bar with the LED elements and the circuit boards mounted between the light bar and the heat dissipating structure.

Abstract: A method for manufacturing the hemispherical light emitting portion of an artificial smoldering scent-stick comprises the steps of providing a light guide pipe and a light emitting element. The light guide pipe includes a bottom end and a top end opposite to the bottom portion. The light emitting element is fixed on the bottom end. A colloid is dripped on an end face of the top end and the colloid cured, to obtain the shape of the required light-emitting portion.

Abstract: A back light module includes a lens and a plurality of LED elements. The lens includes a light incident surface and a light extraction surface, a plurality of first recesses being defined in the light extraction surface, a plurality of second recesses being defined in the light incident surface. Each first recess has a pair of first inclined surfaces, and an angle between the first inclined surface and a plane where the light incident surface located is larger than or equal to a critical angle of total reflection of the lens. Each second recess has a pair of second inclined surfaces, and an angle between the second inclined surface and the plane where the light incident surface located is less than or equal to the angle between the first inclined surface and the plane where the light incident surface located.

Abstract: A reflector configured for guiding light emitted from a light emitting diode (LED) light source includes four reflective walls. The reflective walls are connected side-by-side to cooperatively define a cavity. The cavity has a first opening and a second opening at opposite ends thereof. An inner diameter of the cavity gradually decrease as it extends from the second opening toward the first opening. The LED light source is located at the second opening of the cavity. Light emitted from the LED light source enters into the cavity and is reflected by the at least one reflective wall toward the first opening of the cavity. An illuminating device and a backlight module using the reflector are also provided.

Abstract: A laser processing system for accurate detection of how far away the surface of a workpiece may be includes a platform, a laser processing device, a distance detection device, and a driving device. The platform is configured for carrying at least one workpiece. Both the laser processing device and the distance detection device are arranged upon the platform. The distance detection device detects an actual distance between a surface of the workpiece and the laser processing device, and compares the preset height with the actual height. If the preset height is less than the actual height, the distance detection device emitting a warning signal to remind a worker to re-enter a new preset height.

Abstract: An LED module, includes a heat sink, an LEDs mounted on a side of the heat sink and a light guide plate spaced from the LED light source. A flexible light guiding tube is disposed between the light guide plate and the LED light source. The flexible light guiding tube has an first end. A bore diameter of the outmost end of the first end is larger than or equal to a diameter of a top end of the LED light source. The outmost end covers the top end of the LEDs therein. Compared to the prior art, The LED module of the present disclosure has high luminous efficiency and good thermal performance.

Abstract: A backlight module employing a diffusion plate is provided. The diffusion plate includes a main body and antireflection films formed on surfaces of the main body. The main body includes a light incident surface, and a light emitting surface opposite to the light incident surface. Each antireflection film has a number of antireflection film layers. A thickness of each antireflection film layer is less than a wavelength of visible light.