Patents by Inventor Chen-Han Wang

Chen-Han Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12232425
    Abstract: A magnetoresistive random access memory (MRAM) device includes a first array region and a second array region on a substrate, a first magnetic tunneling junction (MTJ) on the first array region, a first top electrode on the first MTJ, a second MTJ on the second array region, and a second top electrode on the second MTJ. Preferably, the first top electrode and the second top electrode include different nitrogen to titanium (N/Ti) ratios.
    Type: Grant
    Filed: November 21, 2023
    Date of Patent: February 18, 2025
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Hui-Lin Wang, Si-Han Tsai, Dong-Ming Wu, Chen-Yi Weng, Ching-Hua Hsu, Ju-Chun Fan, Yi-Yu Lin, Che-Wei Chang, Po-Kai Hsu, Jing-Yin Jhang
  • Publication number: 20250035718
    Abstract: A semiconductor device includes a magnetic tunneling junction (MTJ) on a substrate, in which the MTJ includes a pinned layer on the substrate, a reference layer on the pinned layer, a barrier layer on the reference layer, and a free layer on the barrier layer. Preferably, the free layer and the barrier layer have same width and the barrier layer and the reference layer have different widths.
    Type: Application
    Filed: October 15, 2024
    Publication date: January 30, 2025
    Applicant: UNITED MICROELECTRONICS CORP.
    Inventors: Hui-Lin Wang, Chen -Yi Weng, Che-Wei Chang, Si-Han Tsai, Ching-Hua Hsu, Jing-Yin Jhang, Yu-Ping Wang
  • Publication number: 20240387358
    Abstract: A method for forming an interconnect structure is provided. The method includes the following operations. A contact is formed over a substrate. An interlayer dielectric (ILD) layer is formed over the contact and the substrate. An opening is formed in the ILD layer thereby exposing a portion of the contact. A densified dielectric layer is formed at an exposed surface of the ILD layer by the opening and an oxide layer over the portion of the contact by irradiating a microwave on the exposed surface of the ILD layer.
    Type: Application
    Filed: July 26, 2024
    Publication date: November 21, 2024
    Inventors: KHADERBAD MRUNAL ABHIJITH, YU-YUN PENG, FU-TING YEN, CHEN-HAN WANG, TSU-HSIU PERNG, KENG-CHU LIN
  • Publication number: 20240363722
    Abstract: The present disclosure describes a method of forming an intermediate spacer structure between a gate structure and a source/drain (S/D) contact structure and removing a top portion of the intermediate spacer structure to form a recess. The intermediate spacer structure includes a first spacer layer, a second spacer layer, and a sacrificial spacer layer between the first spacer layer and the second spacer layer. The method further includes removing the sacrificial spacer layer to form an air gap between the first spacer layer and the second spacer layer and spinning a dielectric layer on the air gap, the first spacer layer, and the second spacer layer to fill in the recess and seal the air gap. The dielectric layer includes raw materials for a spin-on dielectric material.
    Type: Application
    Filed: July 10, 2024
    Publication date: October 31, 2024
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Ting-Ting CHEN, Tsai-Jung Ho, Tsung-Han Ko, Tetsuji Ueno, Yahru Cheng, Chen-Han Wang, Keng-Chu Lin, Shuen-Shin Liang, Tsu-Hsiu Perng
  • Patent number: 12119404
    Abstract: Methods for manufacturing a semiconductor structure are provided. The method includes alternately stacking first semiconductor material layers and second semiconductor layers over a substrate and patterning the first semiconductor material layers and the second semiconductor layers to form a first fin structure and a second fin structure. The method also includes forming an insulating layer around the first fin structure and the second fin structure and forming a dielectric fin structure over the insulating layer and spaced apart from the first fin structure and the second fin structure. The method also includes forming a first source/drain structure attached to the first fin structure and forming a semiconductor layer covering the first source/drain structure. The method also includes oxidizing the semiconductor layer to form an oxide layer and forming a second source/drain structure attached to the second fin structure after the oxide layer is formed.
    Type: Grant
    Filed: June 29, 2023
    Date of Patent: October 15, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Chen-Han Wang, Pei-Hsun Wang, Chun-Hsiung Lin, Chih-Hao Wang
  • Patent number: 12094952
    Abstract: The present disclosure describes a method of forming an intermediate spacer structure between a gate structure and a source/drain (S/D) contact structure and removing a top portion of the intermediate spacer structure to form a recess. The intermediate spacer structure includes a first spacer layer, a second spacer layer, and a sacrificial spacer layer between the first spacer layer and the second spacer layer. The method further includes removing the sacrificial spacer layer to form an air gap between the first spacer layer and the second spacer layer and spinning a dielectric layer on the air gap, the first spacer layer, and the second spacer layer to fill in the recess and seal the air gap. The dielectric layer includes raw materials for a spin-on dielectric material.
    Type: Grant
    Filed: April 10, 2023
    Date of Patent: September 17, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Ting-Ting Chen, Chen-Han Wang, Keng-Chu Lin, Shuen-Shin Liang, Tsu-Hsiu Perng, Tsai-Jung Ho, Tsung-Han Ko, Tetsuji Ueno, Yahru Cheng
  • Publication number: 20240170323
    Abstract: The present disclosure describes a method of forming low thermal budget dielectrics in semiconductor devices.
    Type: Application
    Filed: January 30, 2024
    Publication date: May 23, 2024
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Mrunal Abhijith KHADERBAD, Ko-Feng Chen, Zheng-Yong Liang, Chen-Han Wang, De-Yang Chiou, Yu-Yun Peng, Keng-Chu Lin
  • Publication number: 20240162083
    Abstract: The present disclosure relates to a method for forming a semiconductor device includes forming an opening between first and second sidewalls of respective first and second terminals. The first and second sidewalls oppose each other. The method further includes depositing a first dielectric material at a first deposition rate on top portions of the opening and depositing a second dielectric material at a second deposition rate on the first dielectric material and on the first and second sidewalls. The second dielectric material and the first and second sidewalls entrap a pocket of air. The method also includes performing a treatment process on the second dielectric material.
    Type: Application
    Filed: January 24, 2024
    Publication date: May 16, 2024
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Shuen-Shin LIANG, Chen-Han WANG, Keng-Chu LIN, Tetsuji UENO, Ting-Ting CHEN
  • Patent number: 11942358
    Abstract: The present disclosure describes a method of forming low thermal budget dielectrics in semiconductor devices. The method includes forming, on a substrate, first and second fin structures with an opening in between, filling the opening with a flowable isolation material, treating the flowable isolation material with a plasma, and removing a portion of the plasma-treated flowable isolation material between the first and second fin structures.
    Type: Grant
    Filed: March 12, 2021
    Date of Patent: March 26, 2024
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Mrunal Abhijith Khaderbad, Ko-Feng Chen, Zheng-Yong Liang, Chen-Han Wang, De-Yang Chiou, Yu-Yun Peng, Keng-Chu Lin
  • Patent number: 11901220
    Abstract: The present disclosure relates to a method for forming a semiconductor device includes forming an opening between first and second sidewalls of respective first and second terminals. The first and second sidewalls oppose each other. The method further includes depositing a first dielectric material at a first deposition rate on top portions of the opening and depositing a second dielectric material at a second deposition rate on the first dielectric material and on the first and second sidewalls. The second dielectric material and the first and second sidewalls entrap a pocket of air. The method also includes performing a treatment process on the second dielectric material.
    Type: Grant
    Filed: July 23, 2020
    Date of Patent: February 13, 2024
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Shuen-Shin Liang, Chen-Han Wang, Keng-Chu Lin, Tetsuji Ueno, Ting-Ting Chen
  • Patent number: 11848238
    Abstract: The present disclosure describes a method of fabricating a semiconductor structure that includes forming a fin structure on a substrate, forming a polysilicon gate structure on a first portion of the fin structure, forming an opening in a second portion of the fin structure, wherein the first and second portions of the fin structure is adjacent to each other, forming a recess laterally on a sidewall of the first portion of the fin structure underlying the polysilicon gate structure, and forming an inner spacer structure within the recess. The inner spacer structure comprises an inner air spacer enclosed by a first dielectric spacer layer and a second dielectric spacer layer.
    Type: Grant
    Filed: June 30, 2020
    Date of Patent: December 19, 2023
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chen-Han Wang, Keng-Chu Lin, Shuen-Shin Liang, Tetsuji Ueno, Ting-Ting Chen
  • Publication number: 20230343873
    Abstract: Methods for manufacturing a semiconductor structure are provided. The method includes alternately stacking first semiconductor material layers and second semiconductor layers over a substrate and patterning the first semiconductor material layers and the second semiconductor layers to form a first fin structure and a second fin structure. The method also includes forming an insulating layer around the first fin structure and the second fin structure and forming a dielectric fin structure over the insulating layer and spaced apart from the first fin structure and the second fin structure. The method also includes forming a first source/drain structure attached to the first fin structure and forming a semiconductor layer covering the first source/drain structure. The method also includes oxidizing the semiconductor layer to form an oxide layer and forming a second source/drain structure attached to the second fin structure after the oxide layer is formed.
    Type: Application
    Filed: June 29, 2023
    Publication date: October 26, 2023
    Inventors: Chen-Han WANG, Pei-Hsun WANG, Chun-Hsiung LIN, Chih-Hao WANG
  • Publication number: 20230268268
    Abstract: The present disclosure provides an interconnect structure and a method for forming an interconnect structure. The method for forming an interconnect structure includes forming a first interlayer dielectric (ILD) layer over a substrate, forming a contact in the first ILD layer, forming a second ILD layer over the first ILD layer, forming a first opening in the second ILD layer and obtaining an exposed side surface of the second ILD layer over the contact, forming a densified dielectric layer at the exposed side surface of the second ILD layer, including oxidizing the exposed side surface of the second ILD layer by irradiating a microwave on the second ILD layer, and forming a via in contact with the densified dielectric layer.
    Type: Application
    Filed: April 24, 2023
    Publication date: August 24, 2023
    Inventors: KHADERBAD MRUNAL ABHIJITH, YU-YUN PENG, FU-TING YEN, CHEN-HAN WANG, TSU-HSIU PERNG, KENG-CHU LIN
  • Publication number: 20230268387
    Abstract: The present disclosure relates to a semiconductor device including first and second terminals formed on a fin region and a seal layer formed between the first and second terminals. The seal layer includes a silicon carbide material doped with oxygen. The semiconductor device also includes an air gap surrounded by the seal layer, the fin region, and the first and second terminals.
    Type: Application
    Filed: May 2, 2023
    Publication date: August 24, 2023
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Shuen-Shin LIANG, Tetsuji UENO, Ting-Ting CHEN, Chen-Han WANG, Keng-Chu LIN
  • Publication number: 20230268422
    Abstract: A semiconductor device includes a semiconductor substrate, a channel region, a gate structure, two epitaxial structures, and two silicide structures. The channel region is disposed on the semiconductor substrate. The gate structure is disposed on the semiconductor substrate and over the channel region. The epitaxial structures are connected at opposite ends of the channel region and are disposed opposite to each other relative to the gate structure. The silicide structures respectively surround the epitaxial structures. A method of manufacturing a semiconductor device is also provided.
    Type: Application
    Filed: February 18, 2022
    Publication date: August 24, 2023
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Chen-Han WANG, Keng-Chu LIN, Shuen-Shin LIANG
  • Patent number: 11735666
    Abstract: Methods for manufacturing a semiconductor structure are provided. The semiconductor structure includes a substrate a substrate and channel layers vertically stacked over the substrate. The semiconductor structure also includes a dielectric fin structure formed adjacent to the channel layers and a gate structure abutting the channel layers and the dielectric fin structure. The semiconductor structure also includes a source/drain structure attached to the channel layers and a contact formed over the source/drain structure. The semiconductor structure also includes a Si layer covering a portion of a top surface of the source/drain structure. In addition, the Si layer is sandwiched between the dielectric fin structure and the contact.
    Type: Grant
    Filed: July 26, 2022
    Date of Patent: August 22, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Chen-Han Wang, Pei-Hsun Wang, Chun-Hsiung Lin, Chih-Hao Wang
  • Publication number: 20230242115
    Abstract: The present disclosure describes a method of forming an intermediate spacer structure between a gate structure and a source/drain (S/D) contact structure and removing a top portion of the intermediate spacer structure to form a recess. The intermediate spacer structure includes a first spacer layer, a second spacer layer, and a sacrificial spacer layer between the first spacer layer and the second spacer layer. The method further includes removing the sacrificial spacer layer to form an air gap between the first spacer layer and the second spacer layer and spinning a dielectric layer on the air gap, the first spacer layer, and the second spacer layer to fill in the recess and seal the air gap. The dielectric layer includes raw materials for a spin-on dielectric material.
    Type: Application
    Filed: April 10, 2023
    Publication date: August 3, 2023
    Applicant: Taiwan Semiconductor For Manufactuing Co., Ltd.
    Inventors: Ting-Ting CHEN, Chen-Han Wang, Keng-Chu Lin, Shuen-Shin Liang, Tsu-Hsiu Perng, Tsai-Jung Ho, Tsung-Han Ko, Tetsuji Ueno, Yahru Cheng
  • Patent number: 11688766
    Abstract: The present disclosure relates to a semiconductor device including first and second terminals formed on a fin region and a seal layer formed between the first and second terminals. The seal layer includes a silicon carbide material doped with oxygen. The semiconductor device also includes an air gap surrounded by the seal layer, the fin region, and the first and second terminals.
    Type: Grant
    Filed: April 4, 2022
    Date of Patent: June 27, 2023
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Shuen-Shin Liang, Chen-Han Wang, Keng-Chu Lin, Tetsuji Ueno, Ting-Ting Chen
  • Patent number: 11637062
    Abstract: The present disclosure provides an interconnect structure and a method for forming an interconnect structure. The method for forming an interconnect structure includes forming a first interlayer dielectric (ILD) layer over a substrate, forming a contact in the first ILD layer, forming a second ILD layer over the first ILD layer, forming a first opening in the second ILD layer and obtaining an exposed side surface of the second ILD layer over the contact, forming a densified dielectric layer at the exposed side surface of the second ILD layer, including oxidizing the exposed side surface of the second ILD layer by irradiating a microwave on the second ILD layer, and forming a via in contact with the densified dielectric layer.
    Type: Grant
    Filed: February 21, 2022
    Date of Patent: April 25, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Khaderbad Mrunal Abhijith, Yu-Yun Peng, Fu-Ting Yen, Chen-Han Wang, Tsu-Hsiu Perng, Keng-Chu Lin
  • Patent number: 11626482
    Abstract: The present disclosure describes a method of forming an intermediate spacer structure between a gate structure and a source/drain (S/D) contact structure and removing a top portion of the intermediate spacer structure to form a recess. The intermediate spacer structure includes a first spacer layer, a second spacer layer, and a sacrificial spacer layer between the first spacer layer and the second spacer layer. The method further includes removing the sacrificial spacer layer to form an air gap between the first spacer layer and the second spacer layer and spinning a dielectric layer on the air gap, the first spacer layer, and the second spacer layer to fill in the recess and seal the air gap. The dielectric layer includes raw materials for a spin-on dielectric material.
    Type: Grant
    Filed: March 4, 2021
    Date of Patent: April 11, 2023
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Ting-Ting Chen, Chen-Han Wang, Keng-Chu Lin, Shuen-Shin Liang, Tsu-Hsiu Perng, Tsai-Jung Ho, Tsung-Han Ko, Tetsuji Ueno, Yahru Cheng