Patents by Inventor Chen-Han Wang

Chen-Han Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11063042
    Abstract: A semiconductor device having a first region and a second region is provided. The first region has a first protruding structure and a second protruding structure. The second region has a third protruding structure and a fourth protruding structure. First, second, third, and fourth epi-layers are formed on the first, second, third, and fourth protruding structures, respectively. The first and second epi-layers are covered with a first photoresist layer while leaving the third and fourth epi-layers exposed. A dielectric layer is formed over the first photoresist layer and over the third and fourth epi-layers. A portion of the dielectric layer is covered with a second photoresist layer. The portion of the dielectric layer is formed over the third and fourth epi-layers. Portions of the dielectric layer not protected by the first and second photoresist layers are etched. The first and second photoresist layers are removed.
    Type: Grant
    Filed: October 7, 2019
    Date of Patent: July 13, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chen-Han Wang, Chun-Hsiung Lin
  • Publication number: 20210193798
    Abstract: The present disclosure relates to a semiconductor device including first and second terminals formed on a fin region and a seal layer formed between the first and second terminals. The seal layer includes a silicon carbide material doped with oxygen. The semiconductor device also includes an air gap surrounded by the seal layer, the fin region, and the first and second terminals.
    Type: Application
    Filed: July 23, 2020
    Publication date: June 24, 2021
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Shuen-Shin Liang, Chen-Han Wang, Keng-Chu Lin, Tstsuji Ueno, Ting-Ting Chen
  • Publication number: 20210193799
    Abstract: The present disclosure relates to a semiconductor device including first and second terminals formed on a fin region and a seal layer formed between the first and second terminals. The seal layer includes a silicon carbide material doped with oxygen. The semiconductor device also includes an air gap surrounded by the seal layer, the fin region, and the first and second terminals.
    Type: Application
    Filed: November 20, 2020
    Publication date: June 24, 2021
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Shuen-Shin LIANG, Chen-Han WANG, Keng-Chu LIN, Tetsuji UENO, Ting-Ting CHEN
  • Publication number: 20210193506
    Abstract: The present disclosure relates to a method for forming a semiconductor device includes forming an opening between first and second sidewalls of respective first and second terminals. The first and second sidewalls oppose each other. The method further includes depositing a first dielectric material at a first deposition rate on top portions of the opening and depositing a second dielectric material at a second deposition rate on the first dielectric material and on the first and second sidewalls. The second dielectric material and the first and second sidewalls entrap a pocket of air. The method also includes performing a treatment process on the second dielectric material.
    Type: Application
    Filed: July 23, 2020
    Publication date: June 24, 2021
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Shuen-Shin LIANG, Chen-Han WANG, Keng-Chu LIN, Tetsuji UENO, Ting-Ting CHEN
  • Publication number: 20210126106
    Abstract: The present disclosure describes an inner spacer structure for a semiconductor device and a method for forming the same. The method for forming the inner spacer structure in the semiconductor device can include forming a vertical structure over a substrate, forming a gate structure over a portion of the vertical structure, exposing sidewalls of the portion of the vertical structure, forming multiple spacers over the sidewalls of the portion of the vertical structure, and forming a void in each of the multiple spacers.
    Type: Application
    Filed: October 24, 2019
    Publication date: April 29, 2021
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chen-Han WANG, Ding-Kang Shih, Chun-Hsiung Lin, Teng-Chun Tsai, Zhi-Chang Lin, Akira Mineji, Yao-Sheng Huang
  • Publication number: 20210083090
    Abstract: Methods for manufacturing a semiconductor structure is provided. The method for manufacturing the semiconductor structure includes forming nanowire structures over a substrate and forming a gate structure across nanowire structures. The method for manufacturing the semiconductor structure also includes forming a source/drain structure adjacent to the gate structure and forming a Si layer over the source/drain structure. The method for manufacturing the semiconductor structure also includes forming a SiGe layer over the Si layer and oxidizing the SiGe layer to form an oxide layer. The method for manufacturing the semiconductor structure also includes forming a contact through the Si layer over the source/drain structure.
    Type: Application
    Filed: September 16, 2019
    Publication date: March 18, 2021
    Inventors: Chen-Han WANG, Pei-Hsun WANG, Chun-Hsiung LIN, Chih-Hao WANG
  • Publication number: 20200043923
    Abstract: A semiconductor device having a first region and a second region is provided. The first region has a first protruding structure and a second protruding structure. The second region has a third protruding structure and a fourth protruding structure. First, second, third, and fourth epi-layers are formed on the first, second, third, and fourth protruding structures, respectively. The first and second epi-layers are covered with a first photoresist layer while leaving the third and fourth epi-layers exposed. A dielectric layer is formed over the first photoresist layer and over the third and fourth epi-layers. A portion of the dielectric layer is covered with a second photoresist layer. The portion of the dielectric layer is formed over the third and fourth epi-layers. Portions of the dielectric layer not protected by the first and second photoresist layers are etched. The first and second photoresist layers are removed.
    Type: Application
    Filed: October 7, 2019
    Publication date: February 6, 2020
    Inventors: Chen-Han Wang, Chun-Hsiung Lin
  • Patent number: 10461079
    Abstract: A semiconductor device having a first region and a second region is provided. The first region has a first protruding structure and a second protruding structure. The second region has a third protruding structure and a fourth protruding structure. First, second, third, and fourth epi-layers are formed on the first, second, third, and fourth protruding structures, respectively. The first and second epi-layers are covered with a first photoresist layer while leaving the third and fourth epi-layers exposed. A dielectric layer is formed over the first photoresist layer and over the third and fourth epi-layers. A portion of the dielectric layer is covered with a second photoresist layer. The portion of the dielectric layer is formed over the third and fourth epi-layers. Portions of the dielectric layer not protected by the first and second photoresist layers are etched. The first and second photoresist layers are removed.
    Type: Grant
    Filed: July 26, 2018
    Date of Patent: October 29, 2019
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chen-Han Wang, Chun-Hsiung Lin
  • Patent number: 10438948
    Abstract: A semiconductor device having a first region and a second region is provided. The first region has a first protruding structure and a second protruding structure. The second region has a third protruding structure and a fourth protruding structure. First, second, third, and fourth epi-layers are formed on the first, second, third, and fourth protruding structures, respectively. The first and second epi-layers are covered with a first photoresist layer while leaving the third and fourth epi-layers exposed. A dielectric layer is formed over the first photoresist layer and over the third and fourth epi-layers. A portion of the dielectric layer is covered with a second photoresist layer. The portion of the dielectric layer is formed over the third and fourth epi-layers. Portions of the dielectric layer not protected by the first and second photoresist layers are etched. The first and second photoresist layers are removed.
    Type: Grant
    Filed: March 9, 2016
    Date of Patent: October 8, 2019
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chen-Han Wang, Chun-Hsiung Lin
  • Publication number: 20180350805
    Abstract: A semiconductor device having a first region and a second region is provided. The first region has a first protruding structure and a second protruding structure. The second region has a third protruding structure and a fourth protruding structure. First, second, third, and fourth epi-layers are formed on the first, second, third, and fourth protruding structures, respectively. The first and second epi-layers are covered with a first photoresist layer while leaving the third and fourth epi-layers exposed. A dielectric layer is formed over the first photoresist layer and over the third and fourth epi-layers. A portion of the dielectric layer is covered with a second photoresist layer. The portion of the dielectric layer is formed over the third and fourth epi-layers. Portions of the dielectric layer not protected by the first and second photoresist layers are etched. The first and second photoresist layers are removed.
    Type: Application
    Filed: July 26, 2018
    Publication date: December 6, 2018
    Inventors: Chen-Han Wang, Chun-Hsiung Lin
  • Publication number: 20170356953
    Abstract: A method for estimating at least one electrical property of a semiconductor device is provided. The method includes forming the semiconductor device and at least one testing unit on a substrate, irradiating the testing unit with at least one electron beam, estimating electrons from the testing unit induced by the electron beam, and estimating the electrical property of the semiconductor device according to intensity of the estimated electrons from the testing unit.
    Type: Application
    Filed: June 14, 2016
    Publication date: December 14, 2017
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chen-Han WANG, Chun-Hsiung LIN
  • Publication number: 20170221890
    Abstract: A semiconductor device having a first region and a second region is provided. The first region has a first protruding structure and a second protruding structure. The second region has a third protruding structure and a fourth protruding structure. First, second, third, and fourth epi-layers are formed on the first, second, third, and fourth protruding structures, respectively. The first and second epi-layers are covered with a first photoresist layer while leaving the third and fourth epi-layers exposed. A dielectric layer is formed over the first photoresist layer and over the third and fourth epi-layers. A portion of the dielectric layer is covered with a second photoresist layer. The portion of the dielectric layer is formed over the third and fourth epi-layers. Portions of the dielectric layer not protected by the first and second photoresist layers are etched. The first and second photoresist layers are removed.
    Type: Application
    Filed: March 9, 2016
    Publication date: August 3, 2017
    Inventors: Chen-Han Wang, Chun-Hsiung Lin
  • Patent number: 9496398
    Abstract: An embodiment is a structure including a substrate having a fin and an isolation region adjoining the fin, and a raised epitaxial source/drain region on the fin. A first lateral distance is between opposing exterior surfaces of the raised epitaxial source/drain region at an upper portion of the raised epitaxial source/drain region. A second lateral distance is between opposing exterior surfaces of the raised epitaxial source/drain region at a mid portion of the raised epitaxial source/drain region. A third lateral distance is between opposing exterior surfaces of the raised epitaxial source/drain region at a lower portion of the raised epitaxial source/drain region. The first lateral distance is greater than the second lateral distance, and the second lateral distance is less than the third lateral distance.
    Type: Grant
    Filed: January 15, 2014
    Date of Patent: November 15, 2016
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Tung Ying Lee, Chen-Han Wang
  • Publication number: 20150200271
    Abstract: An embodiment is a structure including a substrate having a fin and an isolation region adjoining the fin, and a raised epitaxial source/drain region on the fin. A first lateral distance is between opposing exterior surfaces of the raised epitaxial source/drain region at an upper portion of the raised epitaxial source/drain region. A second lateral distance is between opposing exterior surfaces of the raised epitaxial source/drain region at a mid portion of the raised epitaxial source/drain region. A third lateral distance is between opposing exterior surfaces of the raised epitaxial source/drain region at a lower portion of the raised epitaxial source/drain region. The first lateral distance is greater than the second lateral distance, and the second lateral distance is less than the third lateral distance.
    Type: Application
    Filed: January 15, 2014
    Publication date: July 16, 2015
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Tung Ying Lee, Chen-Han Wang