Abstract: A semiconductor device having a first region and a second region is provided. The first region has a first protruding structure and a second protruding structure. The second region has a third protruding structure and a fourth protruding structure. First, second, third, and fourth epi-layers are formed on the first, second, third, and fourth protruding structures, respectively. The first and second epi-layers are covered with a first photoresist layer while leaving the third and fourth epi-layers exposed. A dielectric layer is formed over the first photoresist layer and over the third and fourth epi-layers. A portion of the dielectric layer is covered with a second photoresist layer. The portion of the dielectric layer is formed over the third and fourth epi-layers. Portions of the dielectric layer not protected by the first and second photoresist layers are etched. The first and second photoresist layers are removed.

Abstract: A method for estimating at least one electrical property of a semiconductor device is provided. The method includes forming the semiconductor device and at least one testing unit on a substrate, irradiating the testing unit with at least one electron beam, estimating electrons from the testing unit induced by the electron beam, and estimating the electrical property of the semiconductor device according to intensity of the estimated electrons from the testing unit.

Abstract: A semiconductor device having a first region and a second region is provided. The first region has a first protruding structure and a second protruding structure. The second region has a third protruding structure and a fourth protruding structure. First, second, third, and fourth epi-layers are formed on the first, second, third, and fourth protruding structures, respectively. The first and second epi-layers are covered with a first photoresist layer while leaving the third and fourth epi-layers exposed. A dielectric layer is formed over the first photoresist layer and over the third and fourth epi-layers. A portion of the dielectric layer is covered with a second photoresist layer. The portion of the dielectric layer is formed over the third and fourth epi-layers. Portions of the dielectric layer not protected by the first and second photoresist layers are etched. The first and second photoresist layers are removed.

Abstract: An embodiment is a structure including a substrate having a fin and an isolation region adjoining the fin, and a raised epitaxial source/drain region on the fin. A first lateral distance is between opposing exterior surfaces of the raised epitaxial source/drain region at an upper portion of the raised epitaxial source/drain region. A second lateral distance is between opposing exterior surfaces of the raised epitaxial source/drain region at a mid portion of the raised epitaxial source/drain region. A third lateral distance is between opposing exterior surfaces of the raised epitaxial source/drain region at a lower portion of the raised epitaxial source/drain region. The first lateral distance is greater than the second lateral distance, and the second lateral distance is less than the third lateral distance.

Abstract: An embodiment is a structure including a substrate having a fin and an isolation region adjoining the fin, and a raised epitaxial source/drain region on the fin. A first lateral distance is between opposing exterior surfaces of the raised epitaxial source/drain region at an upper portion of the raised epitaxial source/drain region. A second lateral distance is between opposing exterior surfaces of the raised epitaxial source/drain region at a mid portion of the raised epitaxial source/drain region. A third lateral distance is between opposing exterior surfaces of the raised epitaxial source/drain region at a lower portion of the raised epitaxial source/drain region. The first lateral distance is greater than the second lateral distance, and the second lateral distance is less than the third lateral distance.