Abstract: A substrate structure is provided, in which an insulating protection layer is formed on a substrate body having a plurality of electrical contact pads, and the insulating protection layer has a plurality of openings corresponding to the plurality of exposed electrical contact pads, and the insulating protection layer is formed with a hollow portion surrounding a partial edge of at least one of the electrical contact pads at at least one of the openings, so as to reduce the barrier of the insulating protection layer.

Abstract: A testing system includes: a dividing circuit configured to receive a testing signal and provide a plurality of input signals according to the testing signal; and a plurality of integrated power-amplifiers coupled to the dividing circuit, each of the plurality of integrated power-amplifiers being configured to be tested by receiving a respective input signal of the plurality of input signals and generating a respective output signal for a predetermined testing time.

Abstract: A semiconductor structure includes a substrate, and an active device and a passive device over the substrate. The active device is disposed in a first region of the substrate, and the passive device is disposed in a second region of the substrate. The semiconductor structure further includes a shielding structure and a passivation layer. The shielding structure includes a barrier layer and a ceiling layer. The barrier layer is on the passive device and the active device, and the ceiling layer is on the barrier layer. The passivation layer is under the barrier layer and covers a top surface of the passive device. An air cavity is defined by sidewalls of the barrier layer, a bottom surface of the ceiling layer, and the substrate.

Abstract: A magnetic multi-pole propulsion array system is applied to at least one external cathode and includes a plurality of magnetic multi-pole thrusters connected adjacent to each other. Each magnetic multi-pole thruster includes a propellant provider, a discharge chamber, an anode and a plurality of magnetic components. The propellant provider outputs propellant. The discharge chamber is connected with the propellant provider to accommodate the propellant. The anode is disposed inside the discharge chamber to generate an electric field. The plurality of magnetic components is respectively disposed on several sides of the discharge chamber. One of the several sides of the discharge chamber of the magnetic multi-pole thruster is applied for one side of a discharge chamber of another magnetic multi-pole thruster.

Abstract: A magnetic device includes a magnetic core and at least two windings. The magnetic core includes an annular main body and a hollow portion. Each of the at least two windings includes a coil with a plurality of turns. Each turn of the coil penetrates through the hollow portion and is disposed around the annular main body. The at least two windings are disposed around the annular main body to form at least three winding regions. Each of the winding regions except a winding region which is last formed has at least three winding layers stacked up one by one. The number of the winding layers of the winding regions except the winding region which is last formed is odd and greater than or equal to three.

Abstract: Disclosed herein, inter alia, are compounds, compositions, and methods of use thereof in the sequencing of a nucleic acid.

Abstract: A method includes etching a gate stack in a wafer to form a trench, depositing a silicon nitride liner extending into the trench, and depositing a silicon oxide layer. The process of depositing the silicon oxide layer includes performing a treatment process on the wafer using a process gas including nitrogen and hydrogen, and performing a soaking process on the wafer using a silicon precursor.

Abstract: A method includes performing a plasma activation on a surface of a first package component, removing oxide regions from surfaces of metal pads of the first package component, and performing a pre-bonding to bond the first package component to a second package component.

Abstract: A power detection circuit is provided. The power detection circuit includes a comparator circuit operative to generate an output signal in response to an input signal. The output signal is configured to change from a first value to a second value in response to the input signal attaining a first threshold value. The output signal is configured to change from the second value to the first value in response to the input signal subsequently attaining a second threshold value. A current limiting circuit is connected to the comparator circuit and operative to limit a leakage current of the comparator circuit.

Abstract: A portable electronic device and a one-hand touch operation method thereof are provided. A touch operation performed on a touch screen is detected. When a shift amount of the touch operation in a first direction is greater than a first threshold, whether to activate a one-hand mode is determined according to a shift amount of the touch operation in a second direction. When the one-hand mode is activated, the operation interface image is zoomed out or shifted, and displayed in a one-hand mode interface display region.

Abstract: Disclosed is an Object Recognition Warehousing Method for STORE or FETCH an object through a pretrained Object Recognition Model (ORM). Image of an object is taken by an image sensor for Object Recognition, and system automatically provides options of classification and labelling A physical object without package is recognized for STORE according to the present invention.

Abstract: A vacuum arc thruster with multi-layer insulation includes a housing, an anode unit and a cathode unit spaced apart from each other in the housing, and an insulator disposed between the anode unit and the cathode unit. The insulator includes a plurality of fuel layers and a plurality of insulating layers. Each insulating layer is located between every two adjacent fuel layers. Accordingly, a multiple-layer design is formed by arranging the fuel layers and the insulating layers which are made of different materials in an alternating manner, thereby attaining the maximum field emission effect, increasing the stability and efficacy of operating the vacuum arc thruster, and prolonging the service life of the thruster.

Abstract: The present invention generally relates to a hydroponic culture medium and a hydroponic planting system, more particularly to a Houttuynia cordata hydroponic culture medium, a Houttuynia cordata hydroponic planting system, Houttuynia cordata extracts, a method, and applications thereof.

Abstract: A method includes encapsulating a device in an encapsulating material, planarizing the encapsulating material and the device, and forming a conductive feature over the encapsulating material and the device. The formation of the conductive feature includes depositing a first conductive material to from a first seed layer, depositing a second conductive material different from the first conductive material over the first seed layer to form a second seed layer, plating a metal region over the second seed layer, performing a first etching on the second seed layer, performing a second etching on the first seed layer, and after the first seed layer is etched, performing a third etching on the second seed layer and the metal region.

Abstract: An electronic package is provided and includes a substrate structure, an electronic element disposed on the substrate structure and an encapsulation layer encapsulating the electronic element, where at least one functional circuit is formed on a surface of a substrate body of the substrate structure, and a wire having a smaller width is arranged on a boundary line at a junction between an encapsulation area and a peripheral area, so that when a mold for forming the encapsulation layer is formed to cover the substrate structure, the mold will create a gap around the wire to serve as an exhaust passage. Therefore, when the encapsulation layer is formed, the exhaust passage can be used to exhaust air, so as to avoid problems such as the occurrence of voids or overflows of the encapsulation layer.

Abstract: A method includes forming a semiconductor layer over a substrate; etching a portion of the semiconductor layer to form a first recess and a second recess; forming a first masking layer over the semiconductor layer; performing a first thermal treatment on the first masking layer, the first thermal treatment densifying the first masking layer; etching the first masking layer to expose the first recess; forming a first semiconductor material in the first recess; and removing the first masking layer.

Abstract: A semiconductor structure includes a substrate, and an active device and a passive device over the substrate. The active device is disposed in a first region of the substrate, and the passive device is disposed in a second region of the substrate. The semiconductor structure further includes a shielding structure and a passivation layer. The shielding structure includes a barrier layer and a ceiling layer. The barrier layer is on the passive device and the active device, and the ceiling layer is on the barrier layer. The passivation layer is under the barrier layer and covers a top surface of the passive device. An air cavity is defined by sidewalls of the barrier layer, a bottom surface of the ceiling layer, and the substrate.

Abstract: A method includes forming a metal seed layer on a dielectric layer, and forming a patterned mask over the metal seed layer. An opening in the patterned mask is over a first portion of the dielectric layer, and the patterned mask overlaps a second portion of the dielectric layer. The method further includes plating a metal region in the opening, removing the patterned mask to expose portions of the metal seed layer, etching the exposed portions of the metal seed layer, performing a plasma treatment on a surface of the second portion of the dielectric layer, and performing an etching process on the surface of the second portion of the dielectric layer.

Abstract: A method includes encapsulating a device in an encapsulating material, planarizing the encapsulating material and the device, and forming a conductive feature over the encapsulating material and the device. The formation of the conductive feature includes depositing a first conductive material to from a first seed layer, depositing a second conductive material different from the first conductive material over the first seed layer to form a second seed layer, plating a metal region over the second seed layer, performing a first etching on the second seed layer, performing a second etching on the first seed layer, and after the first seed layer is etched, performing a third etching on the second seed layer and the metal region.