Abstract: A semiconductor device and a manufacturing method thereof are provided. The semiconductor device includes a semiconductor substrate, active devices and transparent conductive patterns. The active devices are formed on the semiconductor substrate. The transparent conductive patterns are formed over the active devices and electrically connected to the active devices. The transparent conductive patterns are made of a metal oxide material. The metal oxide material has a first crystalline phase with a prefer growth plane rich in oxygen vacancy, and has a second crystalline phase with a prefer growth plane poor in oxygen vacancy.

Abstract: A method includes forming a first package component, which formation process includes forming a first plurality of openings in a first dielectric layer, depositing a first metallic material into the first plurality of openings, performing a planarization process on the first metallic material and the first dielectric layer to form a plurality of metal pads in the first dielectric layer, and selectively depositing a second metallic material on the plurality of metal pads to form a plurality of bond pads. The first plurality of bond pads comprise the plurality of metal pads and corresponding parts of the second metallic material. The first package component is bonded to a second package component.

Abstract: Methods and systems for precisely removing selected layers of materials from a multi-layer work piece using laser ablation are disclosed. Precise removal of one or more selected layers of materials of a work piece may be performed by irradiating at least one location on a multi-layer work piece with a laser beam, ablating material at the at least one location, detecting one or more characteristics of the material ablated at the at least one location and analyzing the one or more characteristics to identify a change in at least one of the one or more characteristics that indicates a change in the type of material being ablated. Related systems are also described.

Abstract: Methods and systems for precisely removing selected layers of materials from a multi-layer work piece using laser ablation are disclosed. Precise removal of one or more selected layers of materials of a work piece may be performed by irradiating at least one location on a multi-layer work piece with a laser beam, ablating material at the at least one location, detecting one or more characteristics of the material ablated at the at least one location and analyzing the one or more characteristics to identify a change in at least one of the one or more characteristics that indicates a change in the type of material being ablated. Related systems are also described.

Abstract: The present invention is a method of selecting composite sheet materials for use in ultra-fast laser patterning of layers of organic thin film material such as OLEDs. The material is selected to accomplish patterning of upper layers without damaging underlying layers by using an ultra-fast laser programmed with the appropriate laser processing parameters. These parameters are derived by examining each layer's absorption spectra, thermal, and chemical characteristics. The method of the present invention includes measuring each layer's absorption spectrum, examining each layer's thermal and chemical characteristics, determining if the layer is ablatable, determining the laser setup, patterning the layer through laser ablation processing, and determining if more layers need to be ablated. Further, the method includes a sub-method of selecting an alternate material if a layer's material characteristics are not favorable for ablation without damaging underlying layers.

Abstract: The present invention is a method of selecting composite sheet materials for use in ultra-fast laser patterning of layers of organic thin film material such as OLEDs. The material is selected to accomplish patterning of upper layers without damaging underlying layers by using an ultra-fast laser programmed with the appropriate laser processing parameters. These parameters are derived by examining each layer's absorption spectra, thermal, and chemical characteristics. The method of the present invention includes measuring each layer's absorption spectrum, examining each layer's thermal and chemical characteristics, determining if the layer is ablatable, determining the laser setup, patterning the layer through laser ablation processing, and determining if more layers need to be ablated. Further, the method includes a sub-method of selecting an alternate material if a layer's material characteristics are not favorable for ablation without damaging underlying layers.

Abstract: A method for manufacturing a microstructure device using a near field scanning optical microscope (NSOM) laser micromachining system. A microstructure device preform, including an existing feature, is provided. The NSOM probe tip is scanned over a portion of the preform selected such that a plurality of scan lines cross the existing feature. Scanned locations of the existing feature in at least two scan lines are determined. The orientation of the existing feature is determined based on the scanned locations and the shape of the existing feature. At least one expected machining location in a subsequent scan line is determined based on the shape and orientation of the existing feature. The micro-machining laser is pulsed as the NSOM probe is scanned through the expected machining location(s) during the subsequent scan lines to form at least one fine feature on the microstructure device preform, thus, completing the microstructure device.

Abstract: A method and apparatus for determining the distance between the tip of a machining tool formed of a substantially transmissive material and a surface. A beam of narrow bandwidth light is diffracted by directing the beam of narrow bandwidth light between the surface and the tip of the machining tool such that a portion of the diffracted beam is optically coupled into the machining tool via near-field optically coupling. The power of the portion of the diffracted beam optically coupled into the machining tool is measured. The distance between the tip of the machining tool and the surface is then determined based on the measured power.

Abstract: A method for determining an improved alignment to couple a beam having a high power level into a waveguide. The power of the beam is reduced to a minimum test power level. The reduced-power beam is aligned in a test alignment such that it forms a beam spot on the coupling surface of the waveguide. The coupled power level of the coupled portion of the beam is measured. The power level of the reduced-power beam is increased in steps to a maximum test power level. Corresponding coupled power levels for each power level are measured. If the coupled power level does not saturate and the corresponding coupling efficiency is greater than or equal to the desired coupling efficiency, the current test alignment is determined to be the improved alignment. Otherwise, the test alignment is changed and the new test alignment is tested to see whether it meets the desired standards.

Abstract: A method for generating a surface profile of a microstructure. The profile is processed to determine positions of at least two edges and an approximate center point of the profiled surface. Segments of points on the determined profile are fit to a straight line centered at the approximate center point. A standard deviation of the fitted points is measured. The length and position of the segment are varied until a minimum standard deviation is determined and the process is repeated for segments having different lengths. The point is determined from the longest segment having a standard deviation approximately equal to the minimum standard deviation of all of the segment lengths.

Abstract: A method for generating a surface profile of a microstructure. The profile is processed to determine positions of at least two edges and an approximate center point of the profiled surface. Segments of points on the determined profile are fit to a straight line centered at the approximate center point. A standard deviation of the fitted points is measured. The length and position of the segment are varied until a minimum standard deviation is determined and the process is repeated for segments having different lengths. The point is determined from the longest segment having a standard deviation approximately equal to the minimum standard deviation of all of the segment lengths.

Abstract: A method for manufacturing a microstructure, which includes at least one fine feature on an existing feature, using an NSOM laser micromachining system. A microstructure device preform is provided. A portion of its top surface is profiled with the NSOM to produce a topographical image. This profiled portion is selected to include the existing feature. An image coordinate system is defined for the profiled portion of top surface based on the topographical image. Coordinates of a reference point and the orientation of the existing feature in the image coordinate system are determined using the topographical image. The probe tip of the NSOM is aligned over a portion of the existing feature using the determined coordinates of the reference point and the orientation of the existing feature. The top surface of the microstructure device preform is machined with the micro-machining laser to form the fine feature(s) on the existing feature.

Abstract: A method for red-tuning the resonance frequency of a photonic crystal structure that includes a plurality of holes, using a near-field scanning optical microscope (NSOM) system. Part of the photonic crystal structure is ablated using the NSOM system to form submicron scale debris on a top surface of the photonic crystal structure. The tip of the NSOM system is used to move a portion of the submicron scale debris across the top surface of the photonic crystal structure to partially fill at least one predetermined hole of the plurality of holes of the photonic crystal structure. The portion of the submicron scale debris partially filling the predetermined hole(s) may be annealed.

Abstract: A method for determining an improved alignment to couple a beam having a high power level into a waveguide. The power of the beam is reduced to a minimum test power level. The reduced-power beam is aligned in a test alignment such that it forms a beam spot on the coupling surface of the waveguide. The coupled power level of the coupled portion of the beam is measured. The power level of the reduced-power beam is increased in steps to a maximum test power level. Corresponding coupled power levels for each power level are measured. If the coupled power level does not saturate and the corresponding coupling efficiency is greater than or equal to the desired coupling efficiency, the current test alignment is determined to be the improved alignment. Otherwise, the test alignment is changed and the new test alignment is tested to see whether it meets the desired standards.

Abstract: A system for measuring radiation at a peak wavelength that is radiated from a probe tip of a near-field scanning optical microscope (NSOM) probe used for laser machining, including: a laser source; the NSOM probe; a coupling substrate that is substantially transmissive to the peak wavelength; an NSOM mount to controllably hold the probe and the coupling substrate; an NSOM probe monitor coupled to the mount; an NSOM controller; and a photodetector optically coupled to the substrate. Light is coupled into the probe. The mount includes a Z motion stage. The probe monitor determines the distance between the probe tip and the coupling substrate. The controller is coupled to the probe monitor and the motion stage. It controls the distance between the probe tip and the coupling substrate such that radiation is coupled from the probe tip into the coupling substrate. The photodetector measures the power of this radiation.

Abstract: A patterned, multi-layered thin film structure is patterned using ultra-fast lasers and absorption spectroscopy without damaging underlying layers of the layered structure. The structure is made by selecting ablatable layers based on their thermal, strength and absorption spectra and by using an ultra-fast laser programmed with the appropriate wavelength (?), pulse width (?), spectral width (??), spot size, bite size and fluence. The end structure may have features (such as vias, insulating areas, or inkjet printed areas) patterned in the last (top) layer applied or at deeper layers within the layered structure, and can be used as components of organic light emitting didoes (OLEDs) and organic thin film transistors (OTFTs). The method of the present invention includes determining the product's specifications, providing a substrate, selecting a layer, applying the layer, patterning the layer and determining if more layers need to be added to the multi-layered thin film structure.

Abstract: A patterned, multi-layered thin film structure is patterned using ultra-fast lasers and absorption spectroscopy without damaging underlying layers of the layered structure. The structure is made by selecting ablatable layers based on their thermal, strength and absorption spectra and by using an ultra-fast laser programmed with the appropriate wavelength (?), pulse width (?), spectral width (??), spot size, bite size and fluence. The end structure may have features (such as vias, insulating areas, or inkjet printed areas) patterned in the last (top) layer applied or at deeper layers within the layered structure, and can be used as components of organic light emitting didoes (OLEDs) and organic thin film transistors (OTFTs). The method of the present invention includes determining the product's specifications, providing a substrate, selecting a layer, applying the layer, patterning the layer and determining if more layers need to be added to the multi-layered thin film structure.

Abstract: A near-field scanning optical microscope (NSOM) laser micromachining system for laser machining features on surfaces using an ultrafast laser source and a method of laser machining such features. The system includes: the ultrafast laser source to generate pulses of laser light having pulse durations less than 1 ns and a peak wavelength; an NSOM probe having a substantially cylindrical shape; an NSOM mount to controllably hold the NSOM probe and the microstructure workpiece to be machined; an NSOM probe monitor coupled to the NSOM mount for determining the distance between the probe tip of the NSOM probe and the surface; and an NSOM controller coupled to the NSOM probe monitor, and motion stages in the NSOM mount. The NSOM mount includes an XY motion stage and a Z motion stage. These motion stages are couple to either the NSOM probe or the microstructure workpiece, or one motion stage to each.

Abstract: An apparatus for making a highly repetitive micro-pattern using a laser writer includes one or more diffractive optical elements. At least one diffractive optical element is adapted to split a beam of a laser writer into sub-beams based on a separation distance matching a period of a repetitive structure to be formed in a laser-writable substrate. One or more f-theta lenses are also included. At least one f-theta lens is disposed to intercept the sub-beams, forming a periodic distribution of laser writer output beams.

Abstract: A system for measuring radiation at a peak wavelength that is radiated from a probe tip of a near-field scanning optical microscope (NSOM) probe used for laser machining, including: a laser source; the NSOM probe; a coupling substrate that is substantially transmissive to the peak wavelength; an NSOM mount to controllably hold the probe and the coupling substrate; an NSOM probe monitor coupled to the mount; an NSOM controller; and a photodetector optically coupled to the substrate. Light is coupled into the probe. The mount includes a Z motion stage. The probe monitor determines the distance between the probe tip and the coupling substrate. The controller is coupled to the probe monitor and the motion stage. It controls the distance between the probe tip and the coupling substrate such that radiation is coupled from the probe tip into the coupling substrate. The photodetector measures the power of this radiation.