Abstract: Array of light emitting device is provided as the backlight for a display apparatus. A control means and drive method are provided utilizing a multiple scan selection drive scheme and a relaxation operation to eliminate the flicker and to enhance the speed of LC response and contrast ratio.

Abstract: Array of light emitting device is provided as the backlight for a display apparatus. A control circuit and drive method are provided utilizing a multiple scan selection drive scheme and a charging-relaxation step to eliminate the flicker and to enhanced the speed of LC response.

Abstract: Microelectronic devices may be fabricated while being protected from damage by electrostatic discharge. In one embodiment, a shorting circuit is connected to elements of the microelectronic device, where the microelectronic device is part of a chip-on-glass system. In one aspect of this embodiment, a portion of the shorting circuit is in an area of a substrate where a microchip is bonded. In another embodiment, shorting links of the shorting circuit are comprised of a fusible material, where the fusible material may be disabled by an electrical current capable of fusing the shorting links.

Abstract: Various methods are described to characterize interferometric modulators or similar devices. Measured voltages across interferometric modulators may be used to characterize transition voltages of the interferometric modulators. Measured currents may be analyzed by integration of measured current to provide an indication of a dynamic response of the interferometric modulator. Frequency analysis may be used to provide an indication of a hysteresis window of the interferometric modulator or mechanical properties of the interferometric modulator. Capacitance may be determined through signal correlation, and spread-spectrum analysis may be used to minimize the effect of noise or interference on measurements of various interferometric modulator parameters.

Abstract: Microelectronic devices may be fabricated while being protected from damage by electrostatic discharge. In one embodiment, a shorting circuit is connected to elements of the microelectronic device, where the microelectronic device is part of a chip-on-glass system. In one aspect of this embodiment, a portion of the shorting circuit is in an area of a substrate where a microchip is bonded. In another embodiment, shorting links of the shorting circuit are comprised of a fusible material, where the fusible material may be disabled by an electrical current capable of fusing the shorting links.

Abstract: An isotropic thermal conducting material are arranged in a heat dissipating device to create directional adiabatic heat transfer. In one embodiment, a preferential heat conduction is provided between a heat source and an absorption layer, an absorption layer and a cooling substance, and a cooling substance and a dissipation layer. Structures are further provided to create adiabatic channeling between an absorption and a dissipation.

Abstract: An isotropic thermal conducting material are arranged in a heat dissipating device to create directional adiabatic heat transfer. In one embodiment, a preferential heat conduction is provided between a heat source and an absorption layer, an absorption layer and a cooling substance, and a cooling substance and a dissipation layer. Structures are further provided to create adiabatic channeling between an absorption and a dissipation.

Abstract: Anisotropic thermal conducting materials are arranged in a heat dissipating device to create directional adiabatic heat transfer. In one embodiment, a preferential heat conduction is provided between a cooling substance and a dissipation layer, between a heat source and an absorption layer, and between an absorption layer and a cooling substance.

Abstract: Microelectronic devices may be fabricated while being protected from damage by electrostatic discharge. In one embodiment, a shorting circuit is connected to elements of the microelectronic device, where the microelectronic device is part of a chip-on-glass system. In one aspect of this embodiment, a portion of the shorting circuit is in an area of a substrate where a microchip is bonded. In another embodiment, shorting links of the shorting circuit are comprised of a fusible material, where the fusible material may be disabled by an electrical current capable of fusing the shorting links.

Abstract: A method of fabricating a MEMS device includes conditioning of an insulating layer by applying a voltage across the insulating layer via a conductive sacrificial layer for a period of time, prior to removal of the conductive sacrificial layer. This conditioning process may be used to saturate or stabilize charge accumulated within the insulating layer. The resistance across the insulating layer may also be measured to detect possible defects in the insulating layer.

Abstract: Array of light emitting device is provided as the backlight for a display apparatus. A control circuit and drive method are provided utilizing a multiple scan selection drive scheme and a charging-relaxation step to eliminate the flicker and to enhanced the speed of LC response.

Abstract: A display device comprising a backlight and a light valve array, such as an array of liquid crystal (LC) cells, and a method for operating such display device are provided. The display and the method operate to reduce the intensity of the light source of the backlight during the period when the light valve (LC cell) is in the transition from a dark state to a bright state, and to increase the intensity during the period when the light valve (LC cell) is near or mostly completing its transition. As light transmission is ineffective in the dark or transitional state of the light valve, lighting power efficiency is improved by delivering the light mostly in the final state of the light valve.

Abstract: Array of light emitting device is provided as the backlight for a display apparatus. A control means and drive method are provided utilizing a multiple scan selection drive scheme and a relaxation operation to eliminate the flicker and to enhance the speed of LC response and contrast ratio.

Abstract: Microelectronic devices may be fabricated while being protected from damage by electrostatic discharge. In one embodiment, a shorting circuit is connected to elements of the microelectronic device, where the microelectronic device is part of a chip-on-glass system. In one aspect of this embodiment, a portion of the shorting circuit is in an area of a substrate where a microchip is bonded. In another embodiment, shorting links of the shorting circuit are comprised of a fusible material, where the fusible material may be disabled by an electrical current capable of fusing the shorting links.

Abstract: A method of fabricating a MEMS device includes conditioning of an insulating layer by applying a voltage across the insulating layer via a conductive sacrificial layer for a period of time, prior to removal of the conductive sacrificial layer. This conditioning process may be used to saturate or stabilize charge accumulated within the insulating layer. The resistance across the insulating layer may also be measured to detect possible defects in the insulating layer.

Abstract: Light emitting device arrays comprising alternate current routes that redirect supplied current in the event of open circuit due to a damaged light emitting element are provided. Furthermore, passive light emitting device arrays that provide current compensation for lost light output are provided.

Abstract: A system and drive method for compensating intensity variation due to variation of operating cycles in a dynamically controlled system comprising a plurality of light emitting devices are provided in this invention.

Abstract: A LCD backlight with mosaic structure is provided. Each of the backlight unit blocks comprises light sources, light guide plate, electric controlling circuitry and mechanical interfacing features.

Abstract: A system and driving method are provided to accurately reproduce an input image using calibrated intensity profile. Extended dynamic range can be obtained according to the computation method. Improved structures for solid-state backlighting system suitable for such application are provided.

Abstract: Drive method and pixel circuits comprising a direct current path between a scan electrode and a data electrode are disclosed. Preferred embodiments of said pixel circuit are provided for the application to convert current signal received from a data electrode to voltage signal for current-control drive. In such preferred embodiments, light emitting device displays are operated in current-control mode without being influenced by variations in threshold voltage of transistor and forward voltage of light emitting element. Further extension and applications are described. Preferred embodiments leading to three-transistor solution of such operation are disclosed.