Abstract: Display pixel circuits and a drive scheme utilizing a switching element operating in reverse direction in a data scan period to provide voltage reference are provided. Preferred embodiments and operation method leading to three-transistor solutions in current-control mode, common-cathode, and n-channel transistor drive configuration for light emitting device display are described.

Abstract: Structure for polarized light source suitable for the application of flat panel display is provided.

Abstract: Microelectronic devices may be fabricated while being protected from damage by electrostatic discharge. In one embodiment, a shorting circuit is connected to elements of the microelectronic device, where the microelectronic device is part of a chip-on-glass system. In one aspect of this embodiment, a portion of the shorting circuit is in an area of a substrate where a microchip is bonded. In another embodiment, shorting links of the shorting circuit are comprised of a fusible material, where the fusible material may be disabled by an electrical current capable of fusing the shorting links.

Abstract: Various methods are described to characterize interferometric modulators or similar devices. Measured voltages across interferometric modulators may be used to characterize transition voltages of the interferometric modulators. Measured currents may be analyzed by integration of measured current to provide an indication of a dynamic response of the interferometric modulator. Frequency analysis may be used to provide an indication of a hysteresis window of the interferometric modulator or mechanical properties of the interferometric modulator. Capacitance may be determined through signal correlation, and spread-spectrum analysis may be used to minimize the effect of noise or interference on measurements of various interferometric modulator parameters.

Abstract: A method of fabricating a MEMS device includes conditioning of an insulating layer by applying a voltage across the insulating layer via a conductive sacrificial layer for a period of time, prior to removal of the conductive sacrificial layer. This conditioning process may be used to saturate or stabilize charge accumulated within the insulating layer. The resistance across the insulating layer may also be measured to detect possible defects in the insulating layer.

Abstract: A method of creating an internal dipole moment in an interferometric light modulating device is disclosed. In certain embodiments, the method includes applying heat and an electrical field to a dielectric layer of an interferometric light modulating device. Before this method, the dielectric layer has mobile charges or includes random dipoles. After this method, however, those random dipoles are substantially aligned, thereby inducing a fixed dipole moment in the dielectric layer. The electric field creates the dipole moment in the dielectric layer and the heat helps increase the speed of the process by supplying additional activation energy. Having a dielectric layer with an induced dipole moment provides an internal voltage source that provides at least a portion of the voltage required to operate the interferometric light modulating device. The induced dipole moment also reduces the possibility of an uncontrolled shift of charge within the device during operation.

Abstract: Light emitting device arrays comprising alternate current routes that redirect supplied current in the event of open circuit due to a damaged light emitting element are provided. Furthermore, passive light emitting device arrays that provide current compensation for lost light output are provided.

Abstract: A method of fabricating a MEMS device includes conditioning of an insulating layer by applying a voltage across the insulating layer via a conductive sacrificial layer for a period of time, prior to removal of the conductive sacrificial layer. This conditioning process may be used to saturate or stabilize charge accumulated within the insulating layer. The resistance across the insulating layer may also be measured to detect possible defects in the insulating layer.

Abstract: Microelectronic devices may be fabricated while being protected from damage by electrostatic discharge. In one embodiment, a shorting circuit is connected to elements of the microelectronic device, where the microelectronic device is part of a chip-on-glass system. In one aspect of this embodiment, a portion of the shorting circuit is in an area of a substrate where a microchip is bonded. In another embodiment, shorting links of the shorting circuit are comprised of a fusible material, where the fusible material may be disabled by an electrical current capable of fusing the shorting links.

Abstract: In one embodiment of the invention, a method of creating an internal dipole moment in an interferometric light modulating device is disclosed. In certain embodiments, the method comprises applying heat and an electrical field to a dielectric layer of an interferometric light modulating device. Prior to implementation of this method, the dielectric layer has mobile charges or comprises random dipoles. After application of this method, however, those random dipoles are substantially aligned, thereby inducing a fixed dipole moment in the dielectric layer. The electric field creates the dipole moment in the dielectric layer and the heat helps increase the speed of the process by supplying additional activation energy. Having a dielectric layer with an induced dipole moment provides an internal voltage source that provides at least a portion of the voltage required to operate the interferometric light modulating device.

Abstract: Multiple conducting channels in a display pixel, controlled by a single access electrode are provided in the present invention. Such pixel circuits operate to set a pixel data voltage by directing a data current to one of the conducting channels, while deliver a drive current to the light emitting device in a pixel via the other conducting channel. Current-controlled drive scheme, independent of threshold voltage, is achievable in the present invention without substantial increase in pixel complexity. Such merged pixel structures provide simplicity and greater flexibility in implementing current drive pixel structure.

Abstract: A driving scheme and pixel circuits therein for active matrix light-emitting device displays are provided. The driving scheme is structured to perform both line selection of and power delivery to the pixels via the same scan-power electrode, as opposed to conventional approach where scanning and drive are performed via separate access lines, thereby allowing more compact pixel design and better utilization of light emitting area. Furthermore, this driving scheme provides a dynamic reference for the active elements in a pixel, creating a different design concept and greater flexibility for pixel circuits. Embodiments of pixel circuits employing this driving scheme are exemplified in this disclosure.

Abstract: Pixel circuits and drive scheme leading to two-transistor solutions for operating active matrix light emitting device display in current-control mode are provided. Furthermore, preferred embodiment in common cathode configuration with N-channel drive transistor operated in current drive mode is provided.

Abstract: Display pixel circuits and a drive scheme utilizing a switching element operating in reverse direction in a data scan period to provide voltage reference are provided. Preferred embodiments and operation method leading to three-transistor solutions in current-control mode, common-cathode, and n-channel transistor drive configuration for light emitting device display are described.

Abstract: Drive method and pixel circuits comprising a direct current path between a scan electrode and a data electrode are disclosed. Preferred embodiments of said pixel circuit are provided for the application to convert current signal received from a data electrode to voltage signal for current-control drive. In such preferred embodiments, light emitting device displays are operated in current-control mode without being influenced by variations in threshold voltage of transistor and forward voltage of light emitting element. Further extension and applications are described. Preferred embodiments leading to three-transistor solution of such operation are disclosed.

Abstract: Multiple conducting channels in a display pixel, controlled by a single access electrode are provided in the present invention. Such pixel circuits operate to set a pixel data voltage by directing a data current to one of the conducting channels, while deliver a drive current to the light emitting device in a pixel via the other conducting channel. Current-controlled drive scheme, independent of threshold voltage, is achievable in the present invention without substantial increase in pixel complexity. Such merged pixel structures provide simplicity and greater flexibility in implementing current drive pixel structure.

Abstract: A driving scheme and pixel circuits therein for active matrix light-emitting device displays are provided. The driving scheme is structured to perform both line selection of and power delivery to the pixels via the same scan-power electrode, as opposed to conventional approach where scanning and drive are performed via separate access lines, thereby allowing more compact pixel design and better utilization of light emitting area. Furthermore, this driving scheme provides a dynamic reference for the active elements in a pixel, creating a different design concept and greater flexibility for pixel circuits. Embodiments of pixel circuits employing this driving scheme are exemplified in this disclosure.

Abstract: The present invention relates to OLED devices having anodes with improved stability and longer lifetime. In particular, the present invention relates to OLEDs comprising an anode having improved stability and longer lifetime wherein the anode comprises a semi-transparent single layer comprising molybdenum.

Abstract: The present invention relates to OLED devices having anodes with improved stability and longer lifetime. In particular, the present invention relates to OLEDs comprising an anode having improved stability and longer lifetime wherein the anode comprises a semi-transparent single layer comprising molybdenum.