Patents by Inventor Chen Ou
Chen Ou has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20250048792Abstract: A light-emitting device including a semiconductor stack generating a first light, and a filter formed on the semiconductor stack, including a first surface facing the semiconductor stack and a second surface opposite to the first surface. The filter includes pairs of layers with different refractive indexes alternately stacked. A portion of the first light is transmitted by the filter. The light emitting device emits a second light including the portion of the first light, and the second light includes a first directional part with a first FWHM and a second directional part with a second FWHM smaller than the first FWHM. The first directional part has a first angle with a normal direction of the second surface in a range of 45-90 degrees and the second directional part having a second angle with the normal direction of the second surface in a range of 0-30 degrees.Type: ApplicationFiled: October 25, 2024Publication date: February 6, 2025Inventors: Heng-Ying CHO, Li-Yu SHEN, Yu-Yi HUNG, Chen OU, Li-Ming CHANG
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Patent number: 12216001Abstract: A device and a method for detecting a light irradiating angle are disclosed. The device, used to detect the incident direction of a light ray, includes a solar sensor and a processor. The sensing unit of the solar sensor has sensing areas. The sensing areas correspondingly generate sensing signals based on the intensity of the light ray. A mask covers the sensing unit and has an X-shaped light transmitting portion. The light ray transmits the X-shaped light transmitting portion to form an X-axis light ray and a Y-axis light ray. The X-axis light ray intersects the Y-axis light ray. The X-axis light ray and the Y-axis light ray fall on the sensing area. The processor, coupled to the sensing unit, receives the sensing signals and determines information of the incident direction according to the sensing signals.Type: GrantFiled: March 21, 2022Date of Patent: February 4, 2025Assignee: National Yang Ming Chiao Tung UniversityInventors: Mang Ou-Yang, Yung-Jhe Yan, Guan-Yu Huang, Tse Yu Cheng, Chang-Hsun Liu, Yu-Siou Liu, Ying-Wen Jan, Chen-Yu Chan, Tung-Yun Hsieh
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Publication number: 20240421249Abstract: A light-emitting device comprises a first semiconductor layer; a semiconductor mesa, comprising an active layer and a second semiconductor layer and comprising an inclined surface; a contact electrode covering the second semiconductor layer and comprising a first side surface; an insulating reflective structure covering the contact electrode and comprising a plurality of insulating reflective structure openings; a connection layer covering the insulating reflective structure and filling into the plurality of insulating reflective structure openings, and comprising a second side surface; and a metal reflective layer covering the connection layer and filling into the plurality of insulating reflective structure openings, and comprising a third side surface; wherein in a cross-sectional view of the light-emitting device, a first pitch is between the first side surface and the inclined surface, a third pitch is between the third side surface and the inclined surface, and the third pitch is smaller than the firstType: ApplicationFiled: June 12, 2024Publication date: December 19, 2024Inventors: Meng-Hsiang HONG, Yu-Ling LIN, Chao-Hsing CHEN, Chen OU, Chien-Ya HUNG
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Publication number: 20240413268Abstract: A semiconductor device includes a semiconductor stack, a reflective structure, and a conductive structure. The semiconductor stack includes a first semiconductor structure, a second semiconductor structure and an active region located between the first semiconductor structure and the second semiconductor structure. The reflective structure is located at a side of semiconductor stack closed to the first semiconductor structure, and includes a first metal. The conductive structure locates between the reflective structure and the first semiconductor structure, and includes a first region overlapping with the active structure and a second region which does not overlap with the active structure. The first metal in the second region has a concentration smaller than 5 atomic percent.Type: ApplicationFiled: June 7, 2024Publication date: December 12, 2024Inventors: Yi-Yang CHIU, Chun-Yu LIN, Chun Wei CHANG, Yi-Ming CHEN, Chen OU, Hung-Yu CHOU, Liang-Yi WU, Hsiao-Chi YANG
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Patent number: 12166151Abstract: A light-emitting device, including: a semiconductor stack generating a first light; and a filter formed on the semiconductor stack, including a first surface facing the semiconductor stack and a second surface opposite to the first surface; and a transparent conductive layer formed on the semiconductor stack; wherein: the filter includes a plurality of first dielectric layers with a first refractive index and a plurality of second dielectric layers with a second refractive index alternately stacked, a portion of the first light is transmitted by the filter and extracted from the second surface, the light-emitting device has a beam angle in a range of 50 degrees to 110 degrees, and the filter comprises a light transmittance of more than 90% with respect to light incident at an incident angle in a range less than 10 degrees.Type: GrantFiled: July 30, 2021Date of Patent: December 10, 2024Assignee: EPISTAR CORPORATIONInventors: Heng-Ying Cho, Li-Yu Shen, Yu-Yi Hung, Chen Ou, Li-Ming Chang
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Patent number: 12155019Abstract: A light-emitting device comprises a substrate comprising a top surface and a sidewall; a semiconductor stack formed on the top surface of the substrate comprising a first semiconductor layer, an active layer and a second semiconductor layer; a dicing street surrounding the semiconductor stack and exposing the top surface of the substrate; a protective layer covering the semiconductor stack and the dicing street; a reflective layer comprising a Distributed Bragg Reflector structure and covering the protective layer; and a cap layer covering the reflective layer, wherein the reflective layer comprises an uneven portion adjacent to the sidewall of the substrate, and the uneven portion comprises an uneven thickness.Type: GrantFiled: August 3, 2023Date of Patent: November 26, 2024Assignee: EPISTAR CORPORATIONInventors: Hsin-Ying Wang, Chih-Hao Chen, Chien-Chih Liao, Chao-Hsing Chen, Wu-Tsung Lo, Tsun-Kai Ko, Chen Ou
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Publication number: 20240274766Abstract: A light-emitting device comprises a substrate comprising a sidewall, a first top surface, and a second top surface, wherein the second top surface is closer to the sidewall of the substrate than the first top surface to the sidewall of the substrate; a semiconductor stack formed on the substrate comprising a first semiconductor layer, an active layer, and a second semiconductor layer; a dicing street surrounding the semiconductor stack, and exposing the first top surface and the second top surface of the substrate; a protective layer covering the semiconductor stack; a reflective layer comprising a Distributed Bragg Reflector structure covering the protective layer; and a cap layer covering the reflective layer, wherein the second top surface of the substrate is not covered by the protective layer, the reflective layer, and the cap layer.Type: ApplicationFiled: April 19, 2024Publication date: August 15, 2024Inventors: Hsin-Ying WANG, Chih-Hao CHEN, Chien-Chih LIAO, Chao-Hsing CHEN, Wu-Tsung LO, Tsun-Kai KO, Chen OU
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Publication number: 20240233572Abstract: A virtual reality acupuncture system contains a virtual reality device comprising: a head-mounted display for viewing a virtual scene model and a mannequin, and a joystick for tracking hand movements for needle insertion determination; an computing host that transmits data with a head-mounted display and constructs an acupoint database, and an acupuncture virtual reality application which is executed to build a virtual reality model, in which the acupuncture virtual reality application constructs a situational scene model for simulating the actual condition of the consultation room; and a virtual 3D spherical acupoint model of the human body, which has a sphere area located at a certain depth below the skin surface, and has a skin distance model, so that the needle can sense the distance depth after touching the skin, which can be used to determine whether the needle position is not outside the sphere area.Type: ApplicationFiled: January 5, 2024Publication date: July 11, 2024Applicant: China Medical UniversityInventors: Sheng-Teng Huang, Wei-Te Huang, Chin-Wei Chang, Mien-Chie Hung, Jaung-Geng Lin, Mao-Feng Sun, Kun-San Chao, Shi-Chen Ou, Yu-Chuan Lin, Hao-Hsiu Hung, Ting-Yu Huang, Po-En Chen
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Publication number: 20240222538Abstract: A photo-detecting device includes a first semiconductor layer, a second semiconductor layer located on the first semiconductor layer, a light-absorbing layer located between the first semiconductor layer and the second semiconductor layer, an insulating layer located on the second semiconductor layer, and an electrode structure located on the insulating layer. The second semiconductor layer includes a first region having a first conductivity-type and a second region having a second conductivity-type different from the first conductivity-type. The first region is surrounded by the second region, and includes a geometric center and an interface between the first region and the second region. The insulating layer covers the first region and the second region. The electrode structure includes an outer sidewall located on the second region. In a top view, the interface is located between the geometric center and the outer sidewall.Type: ApplicationFiled: March 18, 2024Publication date: July 4, 2024Inventors: Chu-Jih SU, Chia-Hsiang CHOU, Wei-Chih PENG, Wen-Luh LIAO, Chao-Shun HUANG, Hsuan-Le LIN, Shih-Chang LEE, Mei Chun LIU, Chen OU
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Patent number: 11990575Abstract: A light-emitting device comprises a substrate comprising a sidewall, a first top surface, and a second top surface, wherein the second top surface is closer to the sidewall of the substrate than the first top surface to the sidewall of the substrate; a semiconductor stack formed on the substrate comprising a first semiconductor layer, an active layer, and a second semiconductor layer; a dicing street surrounding the semiconductor stack, and exposing the first top surface and the second top surface of the substrate; a protective layer covering the semiconductor stack; a reflective layer comprising a Distributed Bragg Reflector structure covering the protective layer; and a cap layer covering the reflective layer, wherein the second top surface of the substrate is not covered by the protective layer, the reflective layer, and the cap layer.Type: GrantFiled: June 5, 2023Date of Patent: May 21, 2024Assignee: EPISTAR CORPORATIONInventors: Hsin-Ying Wang, Chih-Hao Chen, Chien-Chih Liao, Chao-Hsing Chen, Wu-Tsung Lo, Tsun-Kai Ko, Chen Ou
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Patent number: 11961939Abstract: A method of manufacturing a light-emitting device, including: providing a substrate structure including a top surface; forming a precursor layer on the top surface; removing a portion of the precursor layer and a portion of the substrate from the top surface to form a base portion and a plurality of protrusions regularly arranged on the base portion; forming a buffer layer on the base portion and the plurality protrusions; and forming a III-V compound cap layer on the buffer layer; wherein one of the plurality of protrusions comprises a first portion and a second portion formed on the first portion; wherein the first portion is integrated with the base portion and has a first material which is the same as that of the base portion; and wherein the buffer layer contacts side surfaces of the plurality of protrusions and a surface of the base portion.Type: GrantFiled: June 23, 2022Date of Patent: April 16, 2024Assignee: EPISTAR CORPORATIONInventors: Peng Ren Chen, Yu-Shan Chiu, Wen-Hsiang Lin, Shih-Wei Wang, Chen Ou
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Publication number: 20240113262Abstract: A light-emitting device includes: a semiconductor stack, including a first semiconductor layer, an active region and a second semiconductor layer; a first contact electrode and a second contact electrode formed on the semiconductor stack, wherein the first contact electrode includes a first contact part formed on the first semiconductor layer and the second contact electrode includes a second contact part formed on the second semiconductor layer; an insulating stack formed on the semiconductor stack, including an opening on the second contact part; a first electrode pad and a second electrode pad formed on the insulating stack, wherein the second electrode pad filled in the opening and connecting the second contact part; wherein the second electrode pad includes an upper surface, and the upper surface includes a platform area and a depression area on the second contact part; wherein the platform area has a maximum height relative to other areas of the upper surface; wherein an area of a projection of the platType: ApplicationFiled: September 1, 2023Publication date: April 4, 2024Inventors: Hsin-Ying WANG, Hui-Chun YEH, Jhih-Yong YANG, Chen OU, Cheng-Lin LU
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Patent number: 11935981Abstract: A photo-detecting device includes a first semiconductor layer with a first dopant, a light-absorbing layer, a second semiconductor layer, and a semiconductor contact layer. The second semiconductor layer is located on the first semiconductor layer and has a first region and a second region, the light absorbing layer is located between the first semiconductor layer and the second semiconductor layer and has a third region and a fourth region, the semiconductor contact layer contacts the first region. The first region includes a second dopant and a third dopant, the second region includes second dopant, and the third region includes third dopant. The semiconductor contact layer has a first thickness greater than 50 ? and smaller than 1000 ?.Type: GrantFiled: June 30, 2021Date of Patent: March 19, 2024Assignee: EPISTAR CORPORATIONInventors: Chu-Jih Su, Chia-Hsiang Chou, Wei-Chih Peng, Wen-Luh Liao, Chao-Shun Huang, Hsuan-Le Lin, Shih-Chang Lee, Mei Chun Liu, Chen Ou
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Publication number: 20230395765Abstract: A light-emitting device comprises a substrate comprising a top surface and a sidewall; a semiconductor stack formed on the top surface of the substrate comprising a first semiconductor layer, an active layer and a second semiconductor layer; a dicing street surrounding the semiconductor stack and exposing the top surface of the substrate; a protective layer covering the semiconductor stack and the dicing street; a reflective layer comprising a Distributed Bragg Reflector structure and covering the protective layer; and a cap layer covering the reflective layer, wherein the reflective layer comprises an uneven portion adjacent to the sidewall of the substrate, and the uneven portion comprises an uneven thickness.Type: ApplicationFiled: August 3, 2023Publication date: December 7, 2023Inventors: Hsin-Ying WANG, Chih-Hao CHEN, Chien-Chih LIAO, Chao-Hsing CHEN, Wu-Tsung LO, Tsun-Kai KO, Chen OU
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Publication number: 20230361248Abstract: A light-emitting device, includes a semiconductor stack, including a first semiconductor layer, a second semiconductor layer and an active layer formed therebetween; a first electrode formed on the first semiconductor layer, comprising a first pad electrode; a second electrode formed on the second semiconductor layer, comprising a second pad electrode and a second finger electrode extending from the second pad electrode; a second current blocking region formed under the second electrode, comprising a second core region under the second pad electrode and an extending region under the second finger electrode; and a transparent conductive layer, formed on the second semiconductor layer and covering the second core region; wherein in a top view, a contour of the second pad electrode has a circular shape and a contour of the second core region has a shape which is different from the circular shape and selected from square, rectangle, rounded rectangle, rhombus, trapezoid and polygon.Type: ApplicationFiled: July 19, 2023Publication date: November 9, 2023Inventors: Hsin-Ying WANG, Hui-Chun YEH, Li-Ming CHANG, Chien-Fu SHEN, Chen OU
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Publication number: 20230317898Abstract: A light-emitting device comprises a substrate comprising a sidewall, a first top surface, and a second top surface, wherein the second top surface is closer to the sidewall of the substrate than the first top surface to the sidewall of the substrate; a semiconductor stack formed on the substrate comprising a first semiconductor layer, an active layer, and a second semiconductor layer; a dicing street surrounding the semiconductor stack, and exposing the first top surface and the second top surface of the substrate; a protective layer covering the semiconductor stack; a reflective layer comprising a Distributed Bragg Reflector structure covering the protective layer; and a cap layer covering the reflective layer, wherein the second top surface of the substrate is not covered by the protective layer, the reflective layer, and the cap layer.Type: ApplicationFiled: June 5, 2023Publication date: October 5, 2023Applicant: EPISTAR CORPORATIONInventors: Hsin-Ying WANG, Chih-Hao CHEN, Chien-Chih LIAO, Chao-Hsing CHEN, Wu-Tsung LO, Tsun-Kai KO, Chen OU
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Patent number: 11757077Abstract: A light-emitting device comprises a substrate comprising a top surface and a sidewall; a semiconductor stack formed on the top surface of the substrate comprising a first semiconductor layer, an active layer and a second semiconductor layer; a dicing street surrounding the semiconductor stack and exposing the top surface of the substrate; a protective layer covering the semiconductor stack and the dicing street; a reflective layer comprising a Distributed Bragg Reflector structure and covering the protective layer; and a cap layer covering the reflective layer, wherein the reflective layer comprises an uneven portion adjacent to the sidewall of the substrate, and the uneven portion comprises an uneven thickness.Type: GrantFiled: May 3, 2021Date of Patent: September 12, 2023Assignee: EPISTAR CORPORATIONInventors: Hsin-Ying Wang, Chih-Hao Chen, Chien-Chih Liao, Chao-Hsing Chen, Wu-Tsung Lo, Tsun-Kai Ko, Chen Ou
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Patent number: 11705545Abstract: A light-emitting device comprises a substrate comprising a sidewall, a first top surface, and a second top surface, wherein the second top surface is closer to the sidewall of the substrate than the first top surface to the sidewall of the substrate; a semiconductor stack formed on the substrate comprising a first semiconductor layer, an active layer, and a second semiconductor layer; a dicing street surrounding the semiconductor stack, and exposing the first top surface and the second top surface of the substrate; a protective layer covering the semiconductor stack; a reflective layer comprising a Distributed Bragg Reflector structure covering the protective layer; and a cap layer covering the reflective layer, wherein the second top surface of the substrate is not covered by the protective layer, the reflective layer, and the cap layer.Type: GrantFiled: May 3, 2021Date of Patent: July 18, 2023Assignee: EPISTAR CORPORATIONInventors: Hsin-Ying Wang, Chih-Hao Chen, Chien-Chih Liao, Chao-Hsing Chen, Wu-Tsung Lo, Tsun-Kai Ko, Chen Ou
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Patent number: D1012330Type: GrantFiled: November 18, 2020Date of Patent: January 23, 2024Assignee: EPISTAR CORPORATIONInventors: Chen Ou, Li-Ming Chang, Chien-Fu Shen, Hsin-Ying Wang
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Patent number: D1062026Type: GrantFiled: October 28, 2022Date of Patent: February 11, 2025Assignee: EPISTAR CORPORATIONInventors: Hui-Fang Kao, Yao-Ning Chan, Yi-Tang Lai, Yun-Chung Chou, Shih-Chang Lee, Chen Ou