Abstract: A method for fabricating a wafer-level light emitting diode structure is provided. The method includes: providing a substrate, wherein a first semiconductor layer, a light emitting layer, and a second semiconductor layer are sequentially disposed on the substrate; subjecting the first semiconductor layer, the light emitting layer, and the second semiconductor layer with a patterning process to form a first depressed portion, a second depressed portion, a stacked structure disposed on the second depressed portion and a remained first semiconductor layer disposed on the depressed portion, wherein the stacked structure comprises a patterned second semiconductor layer, a patterned emitting layer, and a patterned first semiconductor layer; forming a first electrode on the remained first semiconductor layer of the first depressed portion; and forming a second electrode correspondingly disposed on the patterned second semiconductor layer of the second depressed portion.

Abstract: A light emitting diode includes a semiconductor stacked structure, a substrate, a first electrode, a second electrode and a third electrode. The semiconductor stacked structure includes a first semiconductor layer, a second semiconductor layer and a light emitting layer. A light extraction layer with a roughened structure is formed on the doped semiconductor layer to improve the light emitting efficiency of LED. Furthermore, the strength of the semiconductor stacked structure can be enhanced by the light extraction layer, to improve the reliability of the LED and the production yields of manufacturing process.

Abstract: A light emitting diode includes a semiconductor stacked structure, a substrate, a first electrode, a second electrode and a third electrode. The semiconductor stacked structure includes a first semiconductor layer, a second semiconductor layer and a light emitting layer. An undoped semiconductor layer over the first semiconductor layer may be not removed or not completely removed to increase the strength of the semiconductor stacked structure and improve the reliability of the LED and the production yields of manufacturing process. A roughened structure (or a photonic crystal) can be formed on the undoped semiconductor layer when the semiconductor stacked structure to improve the light emitting efficiency of the LED.

Abstract: Provided is a substrate, including a substrate material, two conductive structures, and at least one diode. The two conductive structures extend from a first surface of the substrate material to a second surface of the substrate material via two through holes penetrating through the substrate material. The at least one diode is embedded in the substrate material at a sidewall of one of the through holes.

Abstract: A light emitting device and a fabricating method thereof are described, wherein the light emitting device includes a substrate, a wall, a first LED chip and a light conversion filling. The first LED chip is disposed on a surface of the substrate. The wall is disposed on the surface of the substrate, and surrounds the first LED chip. A first angle between a central axis of the wall and an inner surface of the wall is 0 degree or is acute, a second angle between the central axis of the wall and an outer surface of the wall is 0 degree or is acute, and the outer surface of the wall and the substrate has a space therebetween. The light conversion filling is surrounded by the light conversion wall, and is disposed on the first LED chip.

Abstract: An illumination device including a base, a heat dissipation member, at least one flexible printed circuit board (FPC), and a plurality of light-emitting elements is provided. The heat dissipation member disposed on the base has a central axis, a plurality of holding curvy surfaces and a plurality of heat dissipation channels extending along the central axis, wherein the holding curvy surfaces and the heat dissipation channels are staggered and arranged about the central axis, and each of the holding curvy surfaces radially extends along the central axis. The flexible printed circuit board is disposed on the holding curvy surfaces. The light-emitting elements are disposed on the flexible printed circuit board. An assembling method of the illumination device is also provided.

Abstract: A light-emitting diode package structure including a chip carrier portion, a light-emitting diode chip, and a package material is provided. The light-emitting diode chip is disposed on the chip carrier portion of the package. The package material is filled in the chip carrier portion and covers the light-emitting diode chip. The package material includes a matrix material, a plurality of first powder particles, and a plurality of second powder particles. The first powder particles and the second powder particles are distributed in the matrix material. Each first powder particle is a wavelength conversion material. Each second powder particle has a shell-like structure.

Abstract: A light emitting diode includes a semiconductor stacked structure, a substrate, a first electrode, a second electrode and a third electrode. The semiconductor stacked structure includes a first semiconductor layer, a second semiconductor layer and a light emitting layer. The first semiconductor layer has a first surface and a second surface opposite to each other and has a first region and a second region. The second semiconductor layer is disposed on the second surface. The light emitting layer is disposed between the first semiconductor layer and the second semiconductor layer. The substrate has a first conductive layer and a second conductive layer thereon. The first electrode is disposed between the second semiconductor layer and the first conductive layer. The second electrode is disposed on the first surface. The third electrode is disposed between the second region and the second conductive layer, and electrically connected to the second electrode.

Abstract: A light emitting diode chip, a light emitting diode package structure and a method for forming the same are provided. The light emitting diode chip includes a bonding layer, which has a plurality of voids, or a minimum horizontal distance between a surrounding boundary of the light emitting diode chip and the bonding layer is larger than 0. The light emitting diode chip, the light emitting diode package structure and the method may improve the product yields and enhance the light emitting efficiency.

Abstract: A light-emitting diode (LED) package structure including a carrier substrate, at least one LED chip, an optical element and a thermal-conductive transparent liquid is provided. The LED chip is disposed on the carrier substrate and has an active layer. The optical element is disposed on the substrate and forms a sealed space with the carrier substrate, and the LED chip is disposed in the sealed space. The thermal-conductive transparent liquid fills up the sealed space.

Abstract: Disclosed is a system and method for capturing technical documents and reading and commentating captured documents thereof. The system may comprise a capturing system and a reading with commentating system. The capturing system selects related drawings from a group of technical documents. It then provides important information and the related drawings onto an image for the readers' review. The reading with commentating system allows the readers to process technical classification, management and export/import for the group of technical documents. Readers may make comments on an information sharing platform after reviewing the technical documents. Besides, other materials collected or generated from the technical analysis on the technical documents may be attached to the information sharing platform.

Abstract: An light device, includes a plurality of first light cells arranged axisymmetrically about an axis; a plurality of second light cells arranged axisymmetrically around the axis; and a controller coupled to a brightness adjust unit, and determines whether to activate the first light cells and second light cells according to a brightness adjust value of the brightness adjust unit, wherein the average distance between the first light cells and the axis is shorter than the average distance between the second light cells and the axis.

Abstract: A light emitting diode chip, a light emitting diode package structure and a method for forming the same are provided. The light emitting diode chip includes a bonding layer, which has a plurality of voids, or a minimum horizontal distance between a surrounding boundary of the light emitting diode chip and the bonding layer is larger than 0. The light emitting diode chip, the light emitting diode package structure and the method may improve the product yields and enhance the light emitting efficiency.

Abstract: Disclosed is a system and method for capturing technical documents and reading and commentating captured documents thereof. The system may comprise a capturing system and a reading with commentating system. The capturing system selects related drawings from a group of technical documents. It then provides important information and the related drawings onto an image for the readers' review. The reading with commentating system allows the readers to process technical classification, management and export/import for the group of technical documents. Readers may make comments on an information sharing platform after reviewing the technical documents. Besides, other materials collected or generated from the technical analysis on the technical documents may be attached to the information sharing platform.

Abstract: A light emitting device and a fabricating method thereof are described. The light emitting device includes a substrate, a light emitting chip, a tubular structure, and a fluorescent conversion layer. The tubular structure is formed on a surface of the substrate. The light emitting chip is disposed on the surface of the substrate and is surrounded by the tubular structure. The fluorescent conversion layer is disposed in the tubular structure and covers the light emitting chip. A ratio of a maximal vertical thickness and a maximal horizontal thickness of the fluorescent conversion layer at the light emitting chip is between 0.1 and 10. A distance for the light ray to pass through the fluorescent conversion layer is controlled by using the tubular structure, so as to solve a problem of the conventional art that fluorescent powder coating package technique results in non-uniform color temperature of the emitted light.

Abstract: An illumination device including a base, a heat dissipation member, at least one flexible printed circuit board (FPC), and a plurality of light-emitting elements is provided. The heat dissipation member disposed on the base has a central axis, a plurality of holding curvy surfaces and a plurality of heat dissipation channels extending along the central axis, wherein the holding curvy surfaces and the heat dissipation channels are staggered and arranged about the central axis, and each of the holding curvy surfaces radially extends along the central axis. The flexible printed circuit board is disposed on the holding curvy surfaces. The light-emitting elements are disposed on the flexible printed circuit board. An assembling method of the illumination device is also provided.

Abstract: The present invention discloses a method for fabricating a light emitting diode (LED) package structure. The method comprises the following steps: a carrier having a substrate and a first protrusion is provided, wherein the first protrusion is disposed on the substrate and has a recess. An adhesion layer and a LED chip are disposed on a bottom of the recess, wherein the adhesion layer is bonded between the carrier and the LED chip, and a ratio between a width of the recess and a width of the LED chip is larger than 1 and smaller than or equal to 1.5 such that a gap existing between a sidewall of the LED chip and an inner sidewall of the recess.

Abstract: A light emitting diode (LED) structure, a manufacturing method thereof and a LED module are provided. The LED structure has temperature sensing function. The LED structure comprises a composite substrate and an LED. The composite substrate comprises a diode structure whose P-type semiconductor region or N-type semiconductor region has a predetermined doping concentration. The diode structure is a temperature sensor, and the sensitivity of the temperature sensor is based on the predetermined doping concentration. The LED is disposed on the composite substrate. The diode structure is used for sensing the heat emitted from the LED.