Abstract: A switching power converter includes: a power stage circuit, including at least one transistor which is configured to operably switch an inductor to convert an input power to an output power; and an active EMI filter circuit, including at least one amplifier, wherein the at least one amplifier is configured to operably sense a noise input signal which is related to a switching noise caused by the switching of the power stage circuit, and amplify the noise input signal to generate a noise cancelling signal, wherein the noise cancelling signal is injected into an input node of the switching power converter, so as to suppress the switching noise and thus reducing EMI, wherein the input power is provided through the input node to the power stage circuit.

Abstract: A method includes: placing a mask on a mask stage; placing a pellicle assembly on a pellicle stage, the pellicle assembly including a pellicle; determining whether a defect level of the pellicle is less than a selected value by scanning the pellicle by a first optical detector; forming a protected mask assembly by mounting the pellicle assembly to the mask assembly; and performing semiconductor processing using the protected mask assembly.

Abstract: A vacuum processing apparatus including a vacuum processing unit embracing a vacuum vessel into which a wafer to be processed is transferred and processed; a lock chamber into which the wafer is transferred; an atmospheric transfer unit embracing an atmospheric transfer chamber maintained at atmospheric pressure and inside which the wafer is transferred; and a wafer preserving container for stacking a processed wafer. The wafer preserving container is provided inside with an exhaust port which is placed behind the opening, in front of the stacking space, and in an upper and a lower edge regions relative to the stacking space and exhausts gas in the stacking space to outside and a manifold which is placed behind the stacking space, towards the opening between the upper edge region and the lower edge region, and has gas outlets to supply certain gas into the stacking space.

Abstract: A switching power converter includes: a power stage circuit, including at least one transistor which is configured to operably switch an inductor to convert an input power to an output power; and an active EMI filter circuit, including at least one amplifier, wherein the at least one amplifier is configured to operably sense a noise input signal which is related to a switching noise caused by the switching of the power stage circuit, and amplify the noise input signal to generate a noise canceling signal, wherein the noise canceling signal is injected into an input node of the switching power converter, so as to suppress the switching noise and thus reducing EMI, wherein the input power is provided through the input node to the power stage circuit.

Abstract: In order to enable plasma density distribution control having a high degree of freedom to solve problems of not only in-plane uniformity of an etching processing but also a reduction of a charge-up damage, a plasma processing apparatus includes: a vacuum chamber provided with a plasma processing chamber that plasma-processes a substrate inside and is able to exhaust the inside of this plasma processing chamber to a vacuum; and a microwave power supply unit that is provided with a microwave source and a circular waveguide and supplies, via the circular waveguide, a microwave power oscillated from the microwave source to the vacuum chamber, in which the microwave power supply unit is configured by arranging a plurality of waveguides, which are coaxially and concentrically arranged with the circular waveguide and have different dielectric constants inside, between the circular waveguide and the vacuum chamber.

Abstract: A plasma processing apparatus adapted to reduce non-uniformity of plasma distribution in a process chamber and to adjust the plasma distribution to “centrally high density”, “circumferentially high density”, or “uniform density” in accordance with a desired etching process, a process chamber; a radio frequency power source; a rectangular waveguide; and a circular waveguide connected to the rectangular waveguide, in which the rectangular waveguide includes an upper rectangular waveguide and a lower rectangular waveguide formed by vertically dividing the rectangular waveguide; and a cutoff section which cuts off the microwave frequency power and which has a dielectric body. The circular waveguide includes an inner waveguide connected to the upper rectangular waveguide and formed inside; and an outer waveguide connected to the lower rectangular waveguide and formed on an outer side of the inner waveguide. The cutoff section has a width narrower than those of the rectangular waveguides except the cutoff section.

Abstract: A plasma processing apparatus includes: a vacuum chamber that includes a plasma processing chamber in which a substrate is to be plasma-processed and that can exhaust an inside of the plasma processing chamber to vacuum; and a microwave power supply unit that supplies a microwave power to the vacuum chamber via a circular waveguide. The vacuum chamber includes: a parallel flat plate line portion that is connected to the circular waveguide and receives a microwave power propagated from the circular waveguide; a ring resonator unit that is disposed on an outer periphery of the parallel flat plate line portion and receives the microwave power propagated from the parallel flat plate line portion; a cavity portion that receives a microwave power radiated from a slot antenna formed in the ring resonator unit; and a microwave introduction window that separates the cavity portion from the plasma processing chamber.

Abstract: A plasma processing apparatus adapted to reduce non-uniformity of plasma distribution in a process chamber and to adjust the plasma distribution to “centrally high density”, “circumferentially high density”, or “uniform density” in accordance with a desired etching process, a process chamber; a radio frequency power source; a rectangular waveguide; and a circular waveguide connected to the rectangular waveguide, in which the rectangular waveguide includes an upper rectangular waveguide and a lower rectangular waveguide formed by vertically dividing the rectangular waveguide; and a cutoff section which cuts off the microwave frequency power and which has a dielectric body. The circular waveguide includes an inner waveguide connected to the upper rectangular waveguide and formed inside; and an outer waveguide connected to the lower rectangular waveguide and formed on an outer side of the inner waveguide. The cutoff section has a width narrower than those of the rectangular waveguides except the cutoff section.

Abstract: A sensor package structure is provided. The sensor package structure includes a substrate, a sensor chip disposed on the substrate, a plurality of electrical connection members electrically connecting the sensor chip to the substrate, a supporting adhesive layer formed on the sensor chip, and a light-permeable sheet disposed on the supporting adhesive layer. Each of the electrical connection members includes a head solder disposed on a connecting pad of the sensor chip, a wire having a first end and a second end, and a tail solder. The first end of the wire extends from the head solder so as to connect the second end onto a soldering pad of the substrate, and the wire has a first bending portion arranged adjacent to the head solder. The head solder and the first bending portion of each of the electrical connection members are embedded in the supporting adhesive layer.

Abstract: A switching power converter includes: a power stage circuit, including at least one transistor which is configured to operably switch an inductor to convert an input power to an output power; and an active EMI filter circuit, including at least one amplifier, wherein the at least one amplifier is configured to operably sense a noise input signal which is related to a switching noise caused by the switching of the power stage circuit, and amplify the noise input signal to generate a noise canceling signal, wherein the noise canceling signal is injected into an input node of the switching power converter, so as to suppress the switching noise and thus reducing EMI, wherein the input power is provided through the input node to the power stage circuit.

Abstract: In order to enable plasma density distribution control having a high degree of freedom to solve problems of not only in-plane uniformity of an etching processing but also a reduction of a charge-up damage, a plasma processing apparatus includes: a vacuum chamber provided with a plasma processing chamber that plasma-processes a substrate inside and is able to exhaust the inside of this plasma processing chamber to a vacuum; and a microwave power supply unit that is provided with a microwave source and a circular waveguide and supplies, via the circular waveguide, a microwave power oscillated from the microwave source to the vacuum chamber, in which the microwave power supply unit is configured by arranging a plurality of waveguides, which are coaxially and concentrically arranged with the circular waveguide and have different dielectric constants inside, between the circular waveguide and the vacuum chamber.

Abstract: A sensor package structure is provided. The sensor package structure includes a substrate, a sensor chip disposed on the substrate, a plurality of electrical connection members electrically connecting the sensor chip to the substrate, a supporting adhesive layer formed on the sensor chip, and a light-permeable sheet disposed on the supporting adhesive layer. Each of the electrical connection members includes a head solder disposed on a connecting pad of the sensor chip, a wire having a first end and a second end, and a tail solder. The first end of the wire extends from the head solder so as to connect the second end onto a soldering pad of the substrate, and the wire has a first bending portion arranged adjacent to the head solder. The head solder and the first bending portion of each of the electrical connection members are embedded in the supporting adhesive layer.

Abstract: Some embodiments relate to a semiconductor structure having a magnetic tunnel junction (MTJ) on a substrate and a top electrode on the MTJ. A first segment of a top surface of the top electrode adjacent to a first sidewall of the top electrode is different from a second segment of the top surface of the top electrode adjacent to a second sidewall of the top electrode. A sidewall spacer comprises a first spacer on the first sidewall of the top electrode and a second spacer on the second sidewall of the top electrode. A first surface of the first spacer comprises a first curve and a second surface of the second spacer comprises a second curve. A dielectric layer is around the MTJ and top electrode.

Abstract: Some embodiments relate to an integrated chip having a memory cell overlying a substrate and comprising a top electrode. A top electrode via overlies the top electrode. A width of an upper surface of the top electrode via is greater than a width of an upper surface of the top electrode. A conductive via overlies the top electrode via. A width of an upper surface of the conductive via is greater than the width of the upper surface of the top electrode via.

Abstract: A sensor package structure and a sensing module thereof are provided. The sensor package structure includes a substrate, a sensor chip disposed on the substrate, a light-curing layer disposed on the sensor chip, a light-permeable layer arranged above the sensor chip through the light-curing layer, and a shielding layer disposed on a surface of the light-permeable layer. The light-curing layer has an inner lateral side and an outer lateral side opposite to the inner lateral side, and the inner lateral side is separated from the outer lateral side by a first distance. In a transverse direction parallel to a top surface of the sensor chip, the outer lateral side is separated from an outer lateral edge by a second distance which is within a range of ½ to ? of the first distance.

Abstract: Some embodiments relate to a method for manufacturing a memory device. The method includes forming a first masking layer disposed over a dielectric layer, the first masking layer exhibiting sidewalls defining an opening disposed above a magnetoresistive random-access memory (MRAM) cell located in an embedded memory region. A first etch is performed to form a first via opening within the dielectric layer above the MRAM cell. A top electrode via layer formed over the MRAM cell and the dielectric layer. A first planarization process performed on the top electrode via layer to remove part of the top electrode via layer and define a top electrode via having a substantially flat top surface.

Abstract: A sensor package structure includes a substrate, a sensor chip on the substrate, a ring-shaped support, a light permeable board on the ring-shaped support, and an opaque package body formed on the substrate. A top surface of the sensor chip includes a spacing region and a carrying region surrounding the spacing region. The support is disposed on the carrying region. The light permeable board has a ring-shaped notch recessed from an upper surface thereof, and the notch includes a platform surface at least partially located above the support and a wall surface connected to the platform surface and located above the spacing region. A portion of the opaque package body fills the notch and is defined as a light shielding portion. An inner lateral side of the support is arranged in a projection area formed by orthogonally projecting the platform surface onto the top surface.

Abstract: A sensor package structure and a sensing module thereof are provided. The sensor package structure includes a substrate, a sensor chip disposed on the substrate, a light-curing layer disposed on the sensor chip, a light-permeable layer arranged above the sensor chip through the light-curing layer, and a shielding layer disposed on a surface of the light-permeable layer. The light-curing layer has an inner lateral side and an outer lateral side opposite to the inner lateral side, and the inner lateral side is separated from the outer lateral side by a first distance. In a transverse direction parallel to a top surface of the sensor chip, the outer lateral side is separated from an outer lateral edge by a second distance which is within a range of ½ to ? of the first distance.

Abstract: A charge pump, applied to an OLED display panel and coupled to an output capacitor, includes a first switch to a tenth switch and a first capacitor to a third capacitor. The first switch and second switch are coupled in series between a first voltage and a second voltage lower than first voltage. The third switch is coupled to second voltage. The sixth switch is coupled to first voltage. The seventh switch is coupled to second voltage. The fourth switch, eighth switch and tenth switch are coupled to output capacitor. The first capacitor is coupled between first switch and second switch. The second capacitor is coupled between fifth switch and sixth switch. The third capacitor is coupled between seventh switch and eighth switch. The charge pump is operated in a first phase, a second-A phase, the first phase and a second-B phase in order to provide negative output voltage.

Abstract: A sensor package structure includes a substrate, a sensor chip on the substrate, a ring-shaped support, a light permeable board on the ring-shaped support, and an opaque package body formed on the substrate. A top surface of the sensor chip includes a spacing region and a carrying region surrounding the spacing region. The support is disposed on the carrying region. The light permeable board has a ring-shaped notch recessed from an upper surface thereof, and the notch includes a platform surface at least partially located above the support and a wall surface connected to the platform surface and located above the spacing region. A portion of the opaque package body fills the notch and is defined as a light shielding portion. An inner lateral side of the support is arranged in a projection area formed by orthogonally projecting the platform surface onto the top surface.