Abstract: Semiconductor devices and methods of forming are described herein. The methods include depositing a dummy gate material layer over a fin etched into a substrate. A gate mask is then formed over the dummy gate material layer in a channel region of the fin. A dummy gate electrode is etched into the dummy gate material using the gate mask. A top spacer is then deposited over the gate mask and along sidewalls of a top portion of the dummy gate electrode. An opening is then etched through the remainder of the dummy gate material and through the fin. A bottom spacer is then formed along a sidewall of the opening and separates a bottom portion of the dummy gate electrode from the opening. A source/drain region is then formed in the opening and the dummy gate electrode is replaced with a metal gate stack.

Abstract: The disclosure is directed towards semiconductor devices and methods of manufacturing the semiconductor devices. The methods include forming fins in a device region and forming other fins in a multilayer stack of semiconductor materials in a multi-channel device region. A topmost nanostructure may be exposed in the multi-channel device region by removing a sacrificial layer from the top of the multilayer stack. Once removed, a stack of nanostructures are formed from the multilayer stack. A native oxide layer is formed to a first thickness over the topmost nanostructure and to a second thickness over the remaining nanostructures of the stack, the first thickness being greater than the second thickness. A gate dielectric is formed over the fins in the device region. A gate electrode is formed over the gate dielectric in the device region and surrounding the native oxide layer in the multi-channel device region.

Abstract: In an embodiment, a device includes: an isolation region; nanostructures protruding above a top surface of the isolation region; a gate structure wrapped around the nanostructures, the gate structure having a bottom surface contacting the isolation region, the bottom surface of the gate structure extending away from the nanostructures a first distance, the gate structure having a sidewall disposed a second distance from the nanostructures, the first distance less than or equal to the second distance; and a hybrid fin on the sidewall of the gate structure.

Abstract: The disclosure is directed towards semiconductor devices and methods of manufacturing the semiconductor devices. The methods include forming fins in a device region and forming other fins in a multilayer stack of semiconductor materials in a multi-channel device region. A topmost nanostructure may be exposed in the multi-channel device region by removing a sacrificial layer from the top of the multilayer stack. Once removed, a stack of nanostructures are formed from the multilayer stack. A native oxide layer is formed to a first thickness over the topmost nanostructure and to a second thickness over the remaining nanostructures of the stack, the first thickness being greater than the second thickness. A gate dielectric is formed over the fins in the device region. A gate electrode is formed over the gate dielectric in the device region and surrounding the native oxide layer in the multi-channel device region.

Abstract: A method includes forming a dummy gate electrode on a semiconductor region, forming a first gate spacer on a sidewall of the dummy gate electrode, and removing an upper portion of the first gate spacer to form a recess, wherein a lower portion of the first gate spacer remains, filling the recess with a second gate spacer, removing the dummy gate electrode to form a trench, and forming a replacement gate electrode in the trench.

Abstract: A device includes a fin protruding from a semiconductor substrate; a gate stack over and along a sidewall of the fin; a gate spacer along a sidewall of the gate stack and along the sidewall of the fin; an epitaxial source/drain region in the fin and adjacent the gate spacer; and a corner spacer between the gate stack and the gate spacer, wherein the corner spacer extends along the sidewall of the fin, wherein a first region between the gate stack and the sidewall of the fin is free of the corner spacer, wherein a second region between the gate stack and the gate spacer is free of the corner spacer.

Abstract: Semiconductor devices and methods of forming are described herein. The methods include depositing a dummy gate material layer over a fin etched into a substrate. A gate mask is then formed over the dummy gate material layer in a channel region of the fin. A dummy gate electrode is etched into the dummy gate material using the gate mask. A top spacer is then deposited over the gate mask and along sidewalls of a top portion of the dummy gate electrode. An opening is then etched through the remainder of the dummy gate material and through the fin. A bottom spacer is then formed along a sidewall of the opening and separates a bottom portion of the dummy gate electrode from the opening. A source/drain region is then formed in the opening and the dummy gate electrode is replaced with a metal gate stack.

Abstract: A method includes etching a semiconductor substrate to form a trench, with the semiconductor substrate having a sidewall facing the trench, and depositing a first semiconductor layer extending into the trench. The first semiconductor layer includes a first bottom portion at a bottom of the trench, and a first sidewall portion on the sidewall of the semiconductor substrate. The first sidewall portion is removed to reveal the sidewall of the semiconductor substrate. The method further includes depositing a second semiconductor layer extending into the trench, with the second semiconductor layer having a second bottom portion over the first bottom portion, and a second sidewall portion contacting the sidewall of the semiconductor substrate. The second sidewall portion is removed to reveal the sidewall of the semiconductor substrate.

Abstract: A method includes simultaneously forming a first dummy gate stack and a second dummy gate stack on a first portion and a second portion of a protruding fin, simultaneously removing a first gate electrode of the first dummy gate stack and a second gate electrode of the second dummy gate stack to form a first trench and a second trench, respectively, forming an etching mask, wherein the etching mask fills the first trench and the second trench, patterning the etching mask to remove the etching mask from the first trench, removing a first dummy gate dielectric of the first dummy gate stack, with the etching mask protecting a second gate dielectric of the first dummy gate stack from being removed, and forming a first replacement gate stack and a second replacement gate stack in the first trench and the second trench, respectively.

Abstract: A method includes forming a first mask over a substrate through a double patterning process, wherein the first mask comprises a horizontal portion and a plurality of vertical portions protruding over the horizontal portion, and wherein the vertical portions are spaced apart from each other, applying a first etching process to the first mask until a top surface of a portion of the substrate is exposed, applying a second etching process to the substrate to form intra-device openings and inter-device openings, wherein the inter-device openings are formed at the exposed portion of the substrate, filling the inter-device openings and the intra-device openings to form inter-device insulation regions and intra-device insulation regions and etching back the inter-device insulation regions and the intra-device insulation regions to form a plurality of fins protruding over top surfaces of the inter-device insulation regions and the intra-device insulation regions.

Abstract: A method includes forming a first mask over a substrate through a double patterning process, wherein the first mask comprises a horizontal portion and a plurality of vertical portions protruding over the horizontal portion, and wherein the vertical portions are spaced apart from each other, applying a first etching process to the first mask until a top surface of a portion of the substrate is exposed, applying a second etching process to the substrate to form intra-device openings and inter-device openings, wherein the inter-device openings are formed at the exposed portion of the substrate, filling the inter-device openings and the intra-device openings to form inter-device insulation regions and intra-device insulation regions and etching back the inter-device insulation regions and the intra-device insulation regions to form a plurality of fins protruding over top surfaces of the inter-device insulation regions and the intra-device insulation regions.

Abstract: A device includes a plurality of intra-device insulation regions having a first height; and a plurality of semiconductor fins horizontally spaced apart from each other by the plurality of intra-device insulation regions. A portion of the plurality of semiconductor fins is disposed above the plurality of intra-device insulation regions. The device further includes a first inter-device insulation region and a second inter-device insulation region with the plurality of semiconductor fins disposed therebetween. The first and the second inter-device insulation regions have a second height greater than the first height.

Abstract: An embodiment of the disclosure includes a method of pitch reduction. A substrate is provided. A first material layer is formed over the substrate. A second material layer is formed on the first material layer. A hardmask layer is formed on the second material layer. A first imaging layer is formed on the hardmask layer. The first imaging layer is patterned to form a plurality of first features over the hardmask layer. The hardmask layer is etched utilizing the first imaging layer as a mask to form the first features in the hardmask layer. The first imaging layer is removed to expose the etched hardmask layer and a portion of a top surface of the second material layer. A second imaging layer is formed and the process is repeated, such that first and second features are alternating with a pitch substantially half the original pitch.

Abstract: A device includes a plurality of intra-device insulation regions having a first height; and a plurality of semiconductor fins horizontally spaced apart from each other by the plurality of intra-device insulation regions. A portion of the plurality of semiconductor fins is disposed above the plurality of intra-device insulation regions. The device further includes a first inter-device insulation region and a second inter-device insulation region with the plurality of semiconductor fins disposed therebetween. The first and the second inter-device insulation regions have a second height greater than the first height.

Abstract: An embodiment of the disclosure includes a method of pitch reduction. A substrate is provided. A first material layer is formed over the substrate. A second material layer is formed on the first material layer. A hardmask layer is formed on the second material layer. A first imaging layer is formed on the hardmask layer. The first imaging layer is patterned to form a plurality of first features over the hardmask layer. The hardmask layer is etched utilizing the first imaging layer as a mask to form the first features in the hardmask layer. The first imaging layer is removed to expose the etched hardmask layer and a portion of a top surface of the second material layer. A second imaging layer is formed and the process is repeated, such that first and second features are alternating with a pitch substantially half the original pitch.

Abstract: A method of forming a hardmask for defining shallow trench isolation regions in a semiconductor substrate layer includes the steps of: depositing a hardmask layer over the semiconductor substrate layer; depositing and patterning a first photoresist layer over the hardmask layer; etching the hardmask layer after patterning the first photoresist layer to form an interim hardmask layer having at least one line feature; depositing and patterning a second photoresist layer over the interim hardmask layer; and forming a hardmask, the forming step including etching the interim hardmask layer after patterning the second photoresist layer to define a line end of the at least one line feature.

Abstract: A semiconductor device is provided. The semiconductor device includes a substrate, an isolation feature disposed on the substrate, and an active area disposed adjacent the isolation feature. The isolation feature may be a shallow trench isolation feature. The STI feature has a first width at the top of the feature and a second width at the bottom of the feature. The first width is less than the second width. Methods of fabricating a semiconductor device is also provided. A method includes forming shallow trench isolation features and then growing an epitaxial layer adjacent the STI features to form an active region.

Abstract: A method of forming a hardmask for defining shallow trench isolation regions in a semiconductor substrate layer includes the steps of: depositing a hardmask layer over the semiconductor substrate layer; depositing and patterning a first photoresist layer over the hardmask layer; etching the hardmask layer after patterning the first photoresist layer to form an interim hardmask layer having at least one line feature; depositing and patterning a second photoresist layer over the interim hardmask layer; and forming a hardmask, the forming step including etching the interim hardmask layer after patterning the second photoresist layer to define a line end of the at least one line feature.