Patents by Inventor Chen-Shien Chen

Chen-Shien Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220301970
    Abstract: A semiconductor package includes a substrate, a package structure, a lid structure, and a thermal spreader layer. The package structure is disposed on the substrate, wherein the package structure includes a plurality of device dies and a filling material filling a gap between adjacent two of the plurality of device dies. The lid structure is disposed over substrate and covering the package structure. The thermal spreader layer is disposed between the lid structure and the package structure, wherein the thermal spreader layer has a profile that is discontinuous in thickness at a gap region corresponding to the gap.
    Type: Application
    Filed: June 21, 2021
    Publication date: September 22, 2022
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chin-Fu Kao, Chen-Shien Chen
  • Publication number: 20220293494
    Abstract: A method of forming a semiconductor device includes following steps. A first organic layer is formed to cover a first conductive layer. A first opening is formed in the first organic layer to expose a first surface of the first conductive layer. A first silicon layer is formed on a sidewall of the first opening and the first surface of the first conductive layer. A first dielectric layer is formed on the sidewall of the first opening and the first surface of the first conductive layer over the first silicon layer. By using a first mask, portions of the first silicon layer and the first dielectric layer on the first surface are simultaneously removed to expose the first surface, wherein after removing the portions of the first silicon layer and the first dielectric layer, the first dielectric layer covers a top surface of the first silicon layer.
    Type: Application
    Filed: May 30, 2022
    Publication date: September 15, 2022
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Cheng-Lung Yang, Chih-Hung Su, Chen-Shien Chen, Hon-Lin Huang, Kun-Ming Tsai, Wei-Je Lin
  • Patent number: 11437361
    Abstract: A method includes forming a release film over a carrier, forming a polymer buffer layer over the release film, forming a metal post on the polymer buffer layer, encapsulating the metal post in an encapsulating material, performing a planarization on the encapsulating material to expose the metal post, forming a redistribution structure over the encapsulating material and the metal post, and decomposing a first portion of the release film. A second portion of the release film remains after the decomposing. An opening is formed in the polymer buffer layer to expose the metal post.
    Type: Grant
    Filed: September 12, 2019
    Date of Patent: September 6, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Yi-Jen Lai, Lin Chung-Yi, Hsi-Kuei Cheng, Chen-Shien Chen, Kuo-Chio Liu
  • Publication number: 20220278031
    Abstract: A device includes a redistribution line, and a polymer region molded over the redistribution line. The polymer region includes a first flat top surface. A conductive region is disposed in the polymer region and electrically coupled to the redistribution line. The conductive region includes a second flat top surface not higher than the first flat top surface.
    Type: Application
    Filed: May 18, 2022
    Publication date: September 1, 2022
    Inventors: Ching-Wen Hsiao, Ming-Da Cheng, Chih-Wei Lin, Chen-Shien Chen, Chih-Hua Chen, Chen-Cheng Kuo
  • Publication number: 20220262694
    Abstract: A method includes forming a reconstructed package substrate, which includes placing a plurality of substrate blocks over a carrier, encapsulating the plurality of substrate blocks in an encapsulant, planarizing the encapsulant and the plurality of substrate blocks to reveal redistribution lines in the plurality of substrate blocks, and forming a redistribution structure overlapping both of the plurality of substrate blocks and encapsulant. A package component is bonded over the reconstructed package substrate.
    Type: Application
    Filed: May 12, 2021
    Publication date: August 18, 2022
    Inventors: Chen-Shien Chen, Kuo-Ching Hsu, Wei-Hung Lin, Hui-Min Huang, Ming-Da Cheng, Mirng-Ji Lii
  • Publication number: 20220238353
    Abstract: A method includes forming a first package component, which formation process includes forming a first plurality of openings in a first dielectric layer, depositing a first metallic material into the first plurality of openings, performing a planarization process on the first metallic material and the first dielectric layer to form a plurality of metal pads in the first dielectric layer, and selectively depositing a second metallic material on the plurality of metal pads to form a plurality of bond pads. The first plurality of bond pads comprise the plurality of metal pads and corresponding parts of the second metallic material. The first package component is bonded to a second package component.
    Type: Application
    Filed: April 1, 2021
    Publication date: July 28, 2022
    Inventors: Mirng-Ji Lii, Chen-Shien Chen, Lung-Kai Mao, Ming-Da Cheng, Wen-Hsiung Lu
  • Publication number: 20220238480
    Abstract: A method includes attaching a die to a thermal compression bonding (TCB) head through vacuum suction, wherein the die comprises a plurality of conductive pillars, attaching a first substrate to a chuck through vacuum suction, wherein the first substrate comprises a plurality of solder bumps, contacting a first conductive pillar of the plurality of conductive pillars to a first solder bump of the plurality of solder bumps, wherein contacting the first conductive pillar to the first solder bump results in a first height between a topmost surface of the first conductive pillar and a bottommost surface of the first solder bump, and adhering the first solder bump to the first conductive pillar to form a first joint, wherein adhering the first solder bump to the first conductive pillar comprises heating the TCB head.
    Type: Application
    Filed: June 15, 2021
    Publication date: July 28, 2022
    Inventors: Kai Jun Zhan, Chin-Fu Kao, Kuang-Chun Lee, Ming-Da Cheng, Chen-Shien Chen
  • Publication number: 20220223550
    Abstract: In an embodiment, a device includes: a passivation layer on a semiconductor substrate; a first redistribution line on and extending along the passivation layer; a second redistribution line on and extending along the passivation layer; a first dielectric layer on the first redistribution line, the second redistribution line, and the passivation layer; and an under bump metallization having a bump portion and a first via portion, the bump portion disposed on and extending along the first dielectric layer, the bump portion overlapping the first redistribution line and the second redistribution line, the first via portion extending through the first dielectric layer to be physically and electrically coupled to the first redistribution line.
    Type: Application
    Filed: May 18, 2021
    Publication date: July 14, 2022
    Inventors: Chen-Shien Chen, Ting-Li Yang, Po-Hao Tsai, Chien-Chen Li, Ming-Da Cheng
  • Patent number: 11387168
    Abstract: A semiconductor device includes a first conductive layer, an organic layer and a silicon layer. The first conductive layer includes a first surface. The organic layer is disposed over the first surface of the first conductive layer. The silicon layer is disposed over the organic layer and extended onto and in contact with the first surface of the first conductive layer.
    Type: Grant
    Filed: July 9, 2020
    Date of Patent: July 12, 2022
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Cheng-Lung Yang, Chih-Hung Su, Chen-Shien Chen, Hon-Lin Huang, Kun-Ming Tsai, Wei-Je Lin
  • Patent number: 11387171
    Abstract: A method of packaging a semiconductor die includes connecting an interposer frame directly to a substrate, wherein the interposer frame has a plurality of conductive columns. The method further includes attaching the semiconductor die to the substrate in an opening of the interposer frame, wherein the semiconductor die directly contacts the substrate. The method further includes forming a molding compound to fill space between the semiconductor die and the interposer frame. The method further includes removing a portion of the molding compound to expose the plurality of conductive columns. The method further includes forming a redistribution layer directly contacting a top surface of the semiconductor die and a top surface of the interposer frame.
    Type: Grant
    Filed: June 4, 2018
    Date of Patent: July 12, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Hui-Min Huang, Shou-Cheng Hu, Chih-Wei Lin, Ming-Da Cheng, Chung-Shi Liu, Chen-Shien Chen
  • Publication number: 20220173083
    Abstract: A package on package structure includes a first package, a plurality of conductive bumps, a second package and an underfill. The conductive bumps are disposed on a second surface of the first package and electrically connected to the first package. The second package is disposed on the second surface of the first package through the conductive bumps, and includes a semiconductor device and an encapsulating material encapsulating the semiconductor device. A shortest distance from an upper surface of the encapsulating material to an upper surface of the semiconductor device is greater than or substantially equal to twice a thickness of the semiconductor device. The underfill is filled between the first package and the second package.
    Type: Application
    Filed: February 16, 2022
    Publication date: June 2, 2022
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Dong-Han Shen, Chen-Shien Chen, Kuo-Chio Liu, Hsi-Kuei Cheng, Yi-Jen Lai
  • Patent number: 11342253
    Abstract: A device includes a redistribution line, and a polymer region molded over the redistribution line. The polymer region includes a first flat top surface. A conductive region is disposed in the polymer region and electrically coupled to the redistribution line. The conductive region includes a second flat top surface not higher than the first flat top surface.
    Type: Grant
    Filed: November 15, 2019
    Date of Patent: May 24, 2022
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Ching-Wen Hsiao, Ming-Da Cheng, Chih-Wei Lin, Chen-Shien Chen, Chih-Hua Chen, Chen-Cheng Kuo
  • Patent number: 11335634
    Abstract: A method for forming a chip package structure is provided. The method includes providing a wiring substrate. The method includes sequentially forming a nickel-containing layer and a gold-containing layer over the first pad. The method includes forming a conductive protection layer covering the gold-containing layer over the nickel-containing layer. The method includes bonding a chip to the wiring substrate through a conductive bump and a flux layer surrounding the conductive bump. The conductive bump is between the second pad and the chip. The method includes removing the flux layer while the conductive protection layer covers the nickel-containing layer.
    Type: Grant
    Filed: June 5, 2020
    Date of Patent: May 17, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Yu-Huan Chen, Kuo-Ching Hsu, Chen-Shien Chen
  • Patent number: 11329008
    Abstract: A method for manufacturing a semiconductor package includes following operations. A die having a first surface and a second surface opposite to the first surface is provided. A polymeric film is disposed over the second surface of the die. An adhesive film is provided. The die and the polymeric film are attached to a carrier substrate through the adhesive film. The die, the polymeric film and the adhesive film are molded with a molding compound. The polymeric film is sandwiched between the die and the adhesive film upon attaching to the carrier substrate.
    Type: Grant
    Filed: September 22, 2020
    Date of Patent: May 10, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Chen-Shien Chen, Ming-Da Cheng, Ming-Chih Yew, Yu-Tse Su
  • Patent number: 11329124
    Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a semiconductor substrate and a magnetic element over the semiconductor substrate. The semiconductor device structure also includes an isolation element over the magnetic element. The isolation element partially covers a top surface of the magnetic element. The semiconductor device structure further includes a conductive line over the isolation element. In addition, the semiconductor device structure includes a dielectric layer over the conductive line and the magnetic element.
    Type: Grant
    Filed: June 22, 2020
    Date of Patent: May 10, 2022
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chin-Yu Ku, Chi-Cheng Chen, Hon-Lin Huang, Wei-Li Huang, Chun-Yi Wu, Chen-Shien Chen
  • Publication number: 20220140065
    Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a semiconductor substrate and a magnetic element over the semiconductor substrate. The semiconductor device structure also includes an adhesive element between the magnetic element and the substrate. The adhesive element extends exceeding opposite edges of the magnetic element. The semiconductor device structure further includes an isolation element extending exceeding the opposite edges of the magnetic element. The isolation element partially covers a top surface of the magnetic element. In addition, the semiconductor device structure includes a conductive line over the isolation element.
    Type: Application
    Filed: January 19, 2022
    Publication date: May 5, 2022
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chi-Cheng CHEN, Wei-Li HUANG, Chien-Chih KUO, Hon-Lin HUANG, Chin-Yu KU, Chen-Shien CHEN
  • Patent number: 11315896
    Abstract: A pillar structure, and a method of forming, for a substrate is provided. The pillar structure may have one or more tiers, where each tier may have a conical shape or a spherical shape. In an embodiment, the pillar structure is used in a bump-on-trace (BOT) configuration. The pillar structures may have circular shape or an elongated shape in a plan view. The substrate may be coupled to another substrate. In an embodiment, the another substrate may have raised conductive traces onto which the pillar structure may be coupled.
    Type: Grant
    Filed: August 20, 2018
    Date of Patent: April 26, 2022
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Tin-Hao Kuo, Chen-Shien Chen, Mirng-Ji Lii, Chen-Hua Yu, Sheng-Yu Wu, Yao-Chun Chuang
  • Publication number: 20220122944
    Abstract: A semiconductor device and a method of manufacture are provided. In particular, a semiconductor device using blocks, e.g., discrete connection blocks, having through vias and/or integrated passive devices formed therein are provided. Embodiments such as those disclosed herein may be utilized in PoP applications. In an embodiment, the semiconductor device includes a die and a connection block encased in a molding compound. Interconnection layers may be formed on surfaces of the die, the connection block and the molding compound. One or more dies and/or packages may be attached to the interconnection layers.
    Type: Application
    Filed: January 3, 2022
    Publication date: April 21, 2022
    Inventors: Ching-Wen Hsiao, Chen-Shien Chen, Wei Sen Chang, Shou-Cheng Hu
  • Patent number: 11302537
    Abstract: A method for forming a chip package structure is provided. The method includes providing a wiring substrate including a substrate, a pad, and a polymer layer. The polymer layer is over the substrate and the pad, and the polymer layer has a first opening exposing the pad. The method includes forming a conductive adhesive layer over the polymer layer and the pad. The conductive adhesive layer is in direct contact with and conformally covers the polymer layer and the pad. The method includes forming a nickel layer over the conductive adhesive layer. The nickel layer is thicker than the conductive adhesive layer, and the nickel layer and the conductive adhesive layer are made of different materials. The method includes bonding a chip to the wiring substrate through a conductive bump. The conductive bump is between the nickel layer and the chip.
    Type: Grant
    Filed: April 1, 2020
    Date of Patent: April 12, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Kuo-Ching Hsu, Yu-Huan Chen, Chen-Shien Chen
  • Patent number: 11257797
    Abstract: A package on package structure includes a first package, a plurality of conductive bumps, a second package and an underfill. The conductive bumps are disposed on a second surface of the first package and electrically connected to the first package. The second package is disposed on the second surface of the first package through the conductive bumps, and includes a semiconductor device and an encapsulating material encapsulating the semiconductor device. A shortest distance from an upper surface of the encapsulating material to an upper surface of the semiconductor device is greater than or substantially equal to twice a thickness of the semiconductor device. The underfill is filled between the first package and the second package.
    Type: Grant
    Filed: November 20, 2019
    Date of Patent: February 22, 2022
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Dong-Han Shen, Chen-Shien Chen, Kuo-Chio Liu, Hsi-Kuei Cheng, Yi-Jen Lai