Abstract: A fluid-filled hollow optical fiber cell broadly includes a hollow-core optical fiber and a fluid. The optical fiber presents first and second fiber ends and a longitudinal passageway that extends continuously between the fiber ends. The fluid occupies the passageway, with the fiber ends being closed to hermetically seal the fluid within the optical fiber. The first fiber end has a rounded closed shape formed by at least partly melting the first fiber end to form melted fiber material, with the fiber material being permitted to solidify without splicing the first fiber end to another fiber so that the fiber material terminates the passageway at the first fiber end.

Abstract: Spin transfer torque magnetic random access memory structures, integrated circuits, and methods for fabricating integrated circuits are provided. An exemplary spin transfer torque magnetic random access memory structure has a perpendicular magnetic orientation, and includes a bottom electrode and a base layer over the bottom electrode. The base layer includes a seed layer and a roughness suppression layer. The spin transfer torque magnetic random access memory structure further includes a hard layer over the base layer. Also, the spin transfer torque magnetic random access memory structure includes a magnetic tunnel junction (MTJ) element with a perpendicular orientation over the hard layer and a top electrode over the MTJ element.

Abstract: Spin transfer torque magnetic random access memory structures, integrated circuits, and methods for fabricating integrated circuits are provided. An exemplary spin transfer torque magnetic random access memory structure has a perpendicular magnetic orientation, and includes a bottom electrode and a base layer over the bottom electrode. The base layer includes a seed layer and a roughness suppression layer. The spin transfer torque magnetic random access memory structure further includes a hard layer over the base layer. Also, the spin transfer torque magnetic random access memory structure includes a magnetic tunnel junction (MTJ) element with a perpendicular orientation over the hard layer and a top electrode over the MTJ element.

Abstract: Methods of patterning metallization lines having variable widths in a metallization layer. A first mandrel layer is formed over a mask layer, with the mask layer overlying a second mandrel layer. The first mandrel layer is etched to form mandrel lines that have variable widths. The first non-mandrel trenches are etched in the mask layer, where the non-mandrel trenches have variable widths. The first mandrel lines are used to etch mandrel trenches in the mask layer, so that the mandrel lines and first non-mandrel lines define a mandrel pattern. The second mandrel layer is etched according to the mandrel pattern to form second mandrel lines, with the second mandrel lines having the variable widths of the plurality of first mandrel lines and the variable widths of the plurality of non-mandrel trenches.

Abstract: Methods of patterning metallization lines having variable widths in a metallization layer. A first mandrel layer is formed over a mask layer, with the mask layer overlying a second mandrel layer. The first mandrel layer is etched to form mandrel lines that have variable widths. The first non-mandrel trenches are etched in the mask layer, where the non-mandrel trenches have variable widths. The first mandrel lines are used to etch mandrel trenches in the mask layer, so that the mandrel lines and first non-mandrel lines define a mandrel pattern. The second mandrel layer is etched according to the mandrel pattern to form second mandrel lines, with the second mandrel lines having the variable widths of the plurality of first mandrel lines and the variable widths of the plurality of non-mandrel trenches.

Abstract: A fluid-filled hollow optical fiber cell broadly includes a hollow-core optical fiber and a fluid. The optical fiber presents first and second fiber ends and a longitudinal passageway that extends continuously between the fiber ends. The fluid occupies the passageway, with the fiber ends being closed to hermetically seal the fluid within the optical fiber. The first fiber end has a rounded closed shape formed by at least partly melting the first fiber end to form melted fiber material, with the fiber material being permitted to solidify without splicing the first fiber end to another fiber so that the fiber material terminates the passageway at the first fiber end.

Abstract: At least one method, apparatus and system disclosed involves providing a functional cell for a circuit layout for an integrated circuit device. A determination as to a first location for a two-dimensional portion of a first power rail in a functional cell is made. A first portion of the first power rail is formed in a first direction. A second portion of the first power rail is formed in a second direction in the first location for the two-dimensional portion.

Abstract: At least one method, apparatus and system disclosed involves providing a functional cell for a circuit layout for an integrated circuit device. A determination as to a first location for a two-dimensional portion of a first power rail in a functional cell is made. A first portion of the first power rail is formed in a first direction. A second portion of the first power rail is formed in a second direction in the first location for the two-dimensional portion.

Abstract: At least one method, apparatus and system disclosed involves circuit layout for an integrated circuit device. A design for an integrated circuit device is received. The design comprises a functional cell. A first substitute functional cell for a first value of shift of a set of routing tracks respective to the boundary of the functional cell is provided. The first substitute functional cell comprises at least one pin moved by an amount of the first value. A determination is made as to whether an amount of shift of the set of routing tracks corresponds to the first value. The functional cell is replaced with the first substitute functional cell in response to a determination that the amount of shift of the set of routing tracks corresponds to the first value.

Abstract: A method of forming a pattern for interconnect lines in an integrated circuit includes providing a structure having a first lithographic stack, a mandrel layer and a pattern layer disposed over a dielectric stack. Patterning the structure to form mandrels in the mandrel layer and disposing a spacer layer over the mandrels. Etching the spacer layer to form spacers disposed on sidewalls of the mandrels. The spacers and mandrels defining beta and gamma regions. A beta region includes a beta block mask portion and a gamma region includes a gamma block mask portion of the pattern layer. The method also includes etching a beta pillar over the beta block mask portion and etching a gamma pillar over the gamma block mask portion. The method also includes etching the structure to form a pattern in the pattern layer, the pattern including the gamma and beta block mask portions.

Abstract: A magnetic random access memory (MRAM) structure includes a source line connected to a source area of a semiconductor substrate, a magnetic tunnel junction (MTJ) connected to a drain area of the semiconductor substrate, and a gate disposed over the semiconductor substrate between the source area and the drain area. The MRAM structure further includes a contact structure that is configured to apply a first voltage bias to the gate and a means for applying a second voltage bias to the semiconductor substrate outside of the source area and the drain area.

Abstract: At least one method, apparatus and system disclosed involves circuit layout for an integrated circuit device. A design for an integrated circuit device is received. The design comprises a functional cell. A first substitute functional cell for a first value of shift of a set of routing tracks respective to the boundary of the functional cell is provided. The first substitute functional cell comprises at least one pin moved by an amount of the first value. A determination is made as to whether an amount of shift of the set of routing tracks corresponds to the first value. The functional cell is replaced with the first substitute functional cell in response to a determination that the amount of shift of the set of routing tracks corresponds to the first value.

Abstract: A sheathless interface for coupling capillary electrophoresis (CE) with mass spectrometry is disclosed. The sheathless interface includes a separation capillary for performing CE separation and an emitter capillary for electrospray ionization. A portion of the emitter capillary is porous or, alternatively, is coated to form an electrically conductive surface. A section of the emitter capillary is disposed within the separation capillary, forming a joint. A metal tube, containing a conductive liquid, encloses the joint.

Abstract: According to embodiments of the present invention, a magnetoresistive device is provided. The magnetoresistive device includes a free magnetic layer structure having a variable magnetization orientation, and a synthetic antiferromagnetic layer structure including at least three ferromagnetic layers arranged one over the other and antiferromagnetically coupled, each ferromagnetic layer having a fixed magnetization orientation, wherein the free magnetic layer structure and the synthetic antiferromagnetic layer structure are arranged one over the other. According to further embodiments of the present invention, a method for forming a magnetoresistive device is also provided.

Abstract: An ultrahigh differential current perpendicular to the plane dual spin valve read head with high pinning stability. The high pinning stability may be achieved using the same anti-ferromagnetic materials for two spin valves by introducing a double synthetic anti-ferromagnetic structure in one of the two spin valves.

Abstract: In an embodiment, a sensor arrangement may be provided. The sensor arrangement may include a sensor including a first spin valve. The first spin valve may include a first free layer structure; a first pinning structure disposed over the first free layer structure; and a first anti-ferromagnetic layer disposed over the first pinning structure. The sensor may further include a second spin valve. The second spin valve may include a second free layer structure; a second pinning structure disposed over the second free layer structure; and a second anti-ferromagnetic layer disposed over the second pinning structure. The sensor may also include a separator structure positioned between the first spin valve and the second spin valve such that the separator structure may be in contact with the first free layer structure and the second free layer structure.