Abstract: A filling pipe for use in high-temperature heat pipe filling operation includes an alkali metal filling unit, metallic pipe fixing unit, hermetic seal cover and stopping net. The alkali metal filling unit has a filling body, a receiving space disposed in the filling body. A feed inlet and a feeding pipe are disposed at the top and bottom of the filling body, respectively. A vacuum-generating component is disposed at the filling body laterally. The metallic pipe fixing unit has a fixing body and a taper opening disposed thereon and adapted to limit the metallic pipe. When the fixing body gets connected to the filling body, the feeding pipe is inserted into metallic pipe. The hermetic seal cover covers separably the feed inlet. The stopping net is movably disposed in the receiving space. Therefore, solid alkali metals are filled into a metallic pipe easily and safely.

Abstract: A semiconductor device includes a FinFET component, a plurality of patterned dummy semiconductor fins arranged aside a plurality of fins of the FinFET component, an isolation structure formed on the patterned dummy semiconductor fins, and a tuning component formed on the patterned dummy semiconductor fins and electrically connected to the FinFET component. A height of the patterned dummy semiconductor fins is shorter than that of the fins of the FinFET component.

Abstract: A semiconductor device including a substrate, a spacer and a high-k dielectric layer having a U-shape profile is provided. The spacer located on the substrate surrounds and defines a trench. The high-k dielectric layer having a U-shape profile is located in the trench, and the high-k dielectric layer having a U-shape profile exposes an upper portion of the sidewalls of the trench.

Abstract: A copolymer based on dimethyl carbonate and a method of preparing the same are provided. The copolymer based on dimethyl carbonate has a unit from dimethyl carbonate, diols, and a modification monomer. The copolymer based on dimethyl carbonate can be obtained by proceeding transesterification and polycondenastion.

Abstract: A semiconductor device includes a FinFET component, a plurality of patterned dummy semiconductor fins arranged aside a plurality of fins of the FinFET component, an isolation structure formed on the patterned dummy semiconductor fins, and a tuning component formed on the patterned dummy semiconductor fins and electrically connected to the FinFET component. A height of the patterned dummy semiconductor fins is shorter than that of the fins of the FinFET component.

Abstract: A semiconductor device includes a substrate, at least one semiconductor fin, and at least one epitaxy structure. The semiconductor fin is present on the substrate. The semiconductor fin has at least one recess thereon. The epitaxy structure is present in the recess of the semiconductor fin. A topmost location of the epitaxy structure has an n-type impurity concentration lower than an n-type impurity concentration of a location of the epitaxy structure below the topmost location.

Abstract: A tampon includes an absorbent body and a string, the absorbent body has a helical portion and a cushion space, the cushion space is axially formed in the helical portion, and the string is disposed on one end of the absorbent body.

Abstract: A heat dissipator having a circuit formed by screen printing or spraying includes a circuit layer and an isolation layer. The circuit layer, which is on a surface of a heat dissipation part of the heat dissipator having the circuit formed by screen printing or spraying, is formed by screen printing or spraying a uniformly distributed plastic material and low electrical resistance conductive powder. The isolation layer is disposed on the circuit layer and the heat dissipation part.

Abstract: A light guiding plate includes a light emitting surface, a structural surface, a light incident surface and a plurality of trench structures. The structural surface is opposite to the light emitting surface. The light incident surface connects between the light emitting surface and the structural surface. The trench structures are formed at intervals on the structural surface. Each of the trench structures includes a first surface and a second surface. The first surface connects with the structural surface. A first angle included between the first surface and the structural surface ranges from 110 degrees to 130 degrees. The second surface connects with the structural surface. The second surface connects with the first surface to form a trench axis. The first surface of each of the trench structures is closer to the light incident surface relative to the corresponding second surface.

Abstract: A semiconductor device includes a substrate, at least one semiconductor fin, and at least one epitaxy structure. The semiconductor fin is present on the substrate. The semiconductor fin has at least one recess thereon. The epitaxy structure is present in the recess of the semiconductor fin. The epitaxy structure includes a topmost portion, a first portion and a second portion arranged along a direction from the semiconductor fin to the substrate. The first portion has a germanium atomic percentage higher than a germanium atomic percentage of the topmost portion and a germanium atomic percentage of the second portion.

Abstract: A semiconductor device includes a semiconductor substrate, at least a first fin structure, at least a second fin structure, a first gate, a second gate, a first source/drain region and a second source/drain region. The semiconductor substrate has at least a first active region to dispose the first fin structure and at least a second active region to dispose the second fin structure. The first/second fin structure partially overlapped by the first/second gate has a first/second stress, and the first stress and the second stress are different from each other. The first/second source/drain region is disposed in the first/second fin structure at two sides of the first/second gate.

Abstract: A method of making a semiconductor device includes forming a gate stack that include a gate electrode and a spacer layer extending along a sidewall of the gate electrode; forming a source/drain (S/D) feature that is adjacent to the gate stack; forming a dielectric layer over the gate stack and the S/D feature; forming a contact hole in the dielectric layer to expose the S/D feature, wherein the contact hole includes a first sidewall that is formed by the spacer layer and part of the dielectric layer; doping an upper portion of the first sidewall; and performing an etching process thereby cleaning oxides in the contact hole.

Abstract: A latch device comprises a housing unit, a disk unit, an electromagnetic lock unit, a pressing lock unit, and a detecting unit. The housing unit includes a housing, which has a pressing hole and an insertion slot. The disk unit includes a supporting rod positioned through the housing, and two vertical disks pivotally arranged to the supporting rod. The outer perimeter of the two disks is placed with a hook, a first engaging portion and a second engaging portion. The electromagnetic lock unit includes two electromagnetic mechanisms, two retractable bars connected to the two electromagnetic mechanisms, and two electromagnetic latches respectively connected to the two retractable bars. The pressing lock unit includes a pushbutton, and a button latch connected to the pushbutton. The detecting unit includes two detectors, which are disposed inside the housing for detecting the position of the two electromagnetic latches.

Abstract: A semiconductor device includes a substrate, at least one semiconductor fin, and at least one epitaxy structure. The semiconductor fin is present on the substrate. The semiconductor fin has at least one recess thereon. The epitaxy structure is present in the recess of the semiconductor fin. The epitaxy structure includes a topmost portion, a first portion and a second portion arranged along a direction from the semiconductor fin to the substrate. The first portion has a germanium atomic percentage higher than a germanium atomic percentage of the topmost portion and a germanium atomic percentage of the second portion.

Abstract: The present invention provides a non-planar FET and a method of manufacturing the same. The non-planar FET includes a substrate, a fin structure, a gate and a gate dielectric layer. The fin structure is disposed on the substrate. The fin structure includes a first portion adjacent to the substrate wherein the first portion shrinks towards a side of the substrate. The gate is disposed on the fin structure. The gate dielectric layer is disposed between the fin structure and the gate. The present invention further provides a method of manufacturing the non-planar FET.

Abstract: A liquid heat-dissipating assembly has a heat-guiding tube assembly, multiple heat-dissipating units, and at least one heat-dissipating tube. The heat-guiding tube assembly has a first tube, a second tube, and a separating segment. The first tube has at least one first channel. The second tube has at least one second channel. The separating segment is mounted between the first tube and the second tube. The heat-dissipating units are connected with the heat-guiding tube assembly, and each heat-dissipating unit has a heat-dissipating body, a first pipe, and a second pipe. The heat-dissipating body has a passage. The first pipe is connected with the passage and the at least one first channel. The second pipe is connected with the passage and the at least one second channel. The at least one heat-dissipating tube is connected with the at least one second channel of the second tube.

Abstract: A filling pipe for use in high-temperature heat pipe filling operation includes an alkali metal filling unit, metallic pipe fixing unit, hermetic seal cover and stopping net. The alkali metal filling unit has a filling body, a receiving space disposed in the filling body. A feed inlet and a feeding pipe are disposed at the top and bottom of the filling body, respectively. A vacuum-generating component is disposed at the filling body laterally. The metallic pipe fixing unit has a fixing body and a taper opening disposed thereon and adapted to limit the metallic pipe. When the fixing body gets connected to the filling body, the feeding pipe is inserted into metallic pipe. The hermetic seal cover covers separably the feed inlet. The stopping net is movably disposed in the receiving space. Therefore, solid alkali metals are filled into a metallic pipe easily and safely.

Abstract: Disclosed is a primary optics light source with a rectangular light pattern including a substrate, an LED chip and an encapsulated package. The LED chip is installed on the substrate, and the encapsulated package covers the LED chip to fix the LED chip. A light of the LED chip is emitted to the outside through the encapsulated package to form a rectangular light pattern, so that when the light source is lit, a specific rectangular illumination light pattern is formed.

Abstract: A sanitary napkin includes a main pad body having an absorbent body, and a flow-guide unit including two flow-guide members having bottom ends connected to a top surface of the absorbent body, and a pull piece connected to top ends of the flow-guide members. Each flow-guide member includes a plurality of flow-guide sections foldably connected to each other, and a plurality of outer junction sections each formed between outer ends of two adjacent ones of the flow-guide sections. The pull piece is pulled to move the flow-guide sections relative to the absorbent body from a folded position, in which the flow-guide sections are stacked one upon the other, to an extended position, in which the outer junction sections of the flow-guide members are configured to contact the buttocks of a user.

Abstract: A refrigerant heat dissipation apparatus has an evaporator, a condenser having a first condensing tube and a second condensing tube, a first refrigerant tube, two second refrigerant tubes, and a refrigerant. The first refrigerant tube is connected between the top of the evaporator and an upper part of a first condensing tube. The second refrigerant tubes are respectively connected with a lower part of the first condensing tube and a lower part of the second condensing tube, so as to form a multi-flow closed-loop cycle. The refrigerant is filled into the multi-flow closed-loop cycle. The controlling of cycling direction of the refrigerant achieves the efficiency in heat dissipating of the refrigerant heat dissipation apparatus.