Abstract: A curable thermal interface material and a cooling device, and a cooling device manufacturing method thereof are provided. The curable thermal interface material includes thermal conductive material and polymeric material, which is formed from the mixture of thermal conductive material and polymeric material. The curable thermal interface material is disposed on the heat sink, so as to properly conduct heat from the heat source to the heat sink to achieve heat dissipation.

Abstract: A semiconductor device includes a substrate, at least one semiconductor fin, and at least one epitaxy structure. The semiconductor fin is present on the substrate. The semiconductor fin has at least one recess thereon. The epitaxy structure is present in the recess of the semiconductor fin. A topmost location of the epitaxy structure has an n-type impurity concentration lower than an n-type impurity concentration of a location of the epitaxy structure below the topmost location.

Abstract: The invention provides a packaging method for ultraviolet light emitting diode, comprising: (S1) providing a carrier, connected to an electrode; (S2) fixing an UV LED chip on the carrier and electrically connecting the UV LED chip to the electrodes; (S3) covering the UV LED chip with transparent silicon-and-oxygen-containing solution; and (S4) performing a thermal curing process.

Abstract: An automobile lamp having a lighting pattern with a light-and-shade contrast comprises a light guiding pipe, a projecting lens, and a lightening body. Two ends of the light guiding pipe are respectively arranged a light input surface and a light output portion. A light refracting groove is arranged at a bottom surface formed in front of the light output portion and includes a long inclined surface and a short inclined surface. The projecting lens has a light input surface and an arc light output surface. The lightening body projects an original light source opposite to the light input surface of the light guiding pipe. One part of lights of the lightening body is guided to the projecting lens for projecting a lighting pattern with a light-and-shade cut-off line, and the other part of lights is guided toward the lighting pattern to partially overlap the lighting pattern.

Abstract: A liquid-cooling heat sink has a heat-conductive tube and multiple heat-conductive units arranged adjacent to the heat-conductive tube. The heat-conductive tube has a first tube and a second tube. An isolation member having an isolation channel is located between the first tube and the second tube. The isolation member obstructs the heat exchange between the first tube and the second tube. A first delivery tube and a second delivery tube of each one of the heat-conductive bodies respectively connect to the first tube and the second tube of the heat-conductive tube, thereby integrating the first tube and the second tube and obstructing the heat exchange between the cooling liquids with different temperatures. Each of the heat-conductive units distributes the cooling liquids with different temperatures by the heat-conductive tube, thereby simplifying the pipeline setting and reducing the volume of the liquid-cooling heat sink.

Abstract: An optical film includes a first substrate and a second substrate. A plurality of first particles are doped and dispersed in the first substrate, and a plurality of second particles are doped and dispersed in the second substrate. The first substrate has a top surface and a bottom surface, wherein the top surface is a flat surface and the bottom surface is a rough surface. The second substrate is attached to the bottom surface of the first substrate and the second substrate has flat surfaces.

Abstract: A sanitary napkin includes: a substrate having a base layer and an absorbent body mounted on the base layer, and defining a longitudinal direction (X) and a width direction (Y) perpendicular to the longitudinal direction (X); and at least one absorbing unit including a plurality of connecting portions connected to the absorbent body and spaced apart among one another in the longitudinal direction (X), an absorbing portion extending in the longitudinal direction (X) and connected to the connecting portions, and a plurality of cotton fluffs disposed on the absorbing portion. The absorbent body, the connecting portions and the absorbing portion cooperatively define a plurality of aerated channels extending in the width direction (Y).

Abstract: Various embodiments provide a method of controlling a lighting device to generate light of a desired natural scene. The lighting device may include a plurality of warm white LEDs having a first intensity range and a plurality of cool white LEDs having a second intensity range.

Abstract: A semiconductor device includes a substrate, at least one semiconductor fin, and at least one epitaxy structure. The semiconductor fin is present on the substrate. The semiconductor fin has at least one recess thereon. The epitaxy structure is present in the recess of the semiconductor fin. A topmost location of the epitaxy structure has an n-type impurity concentration lower than an n-type impurity concentration of a location of the epitaxy structure below the topmost location.

Abstract: The present invention provides a non-planar FET and a method of manufacturing the same. The non-planar FET includes a substrate, a fin structure, a gate and a gate dielectric layer. The fin structure is disposed on the substrate. The fin structure includes a first portion adjacent to the substrate wherein the first portion shrinks towards a side of the substrate. The gate is disposed on the fin structure. The gate dielectric layer is disposed between the fin structure and the gate. The present invention further provides a method of manufacturing the non-planar FET.

Abstract: A semiconductor device includes a substrate, at least one semiconductor fin, and at least one epitaxy structure. The semiconductor fin is present on the substrate. The semiconductor fin has at least one recess thereon. The epitaxy structure is present in the recess of the semiconductor fin. The epitaxy structure includes a topmost portion, a first portion and a second portion arranged along a direction from the semiconductor fin to the substrate. The first portion has a germanium atomic percentage higher than a germanium atomic percentage of the topmost portion and a germanium atomic percentage of the second portion.

Abstract: A semiconductor device includes a substrate, at least one semiconductor fin, and at least one epitaxy structure. The semiconductor fin is present on the substrate. The semiconductor fin has at least one recess thereon. The epitaxy structure is present in the recess of the semiconductor fin. A topmost location of the epitaxy structure has an n-type impurity concentration lower than an n-type impurity concentration of a location of the epitaxy structure below the topmost location.

Abstract: A semiconductor device includes a FinFET component, a plurality of patterned dummy semiconductor fins arranged aside a plurality of fins of the FinFET component, an isolation structure formed on the patterned dummy semiconductor fins, and a tuning component formed on the patterned dummy semiconductor fins and electrically connected to the FinFET component. A height of the patterned dummy semiconductor fins is shorter than that of the fins of the FinFET component.

Abstract: An automobile lamp having a lighting pattern with a light-and-shade contrast comprises a light guiding pipe, a projecting lens, and a lightening body. Two ends of the light guiding pipe are respectively arranged a light input surface and a light output portion. A light refracting groove is arranged at a bottom surface formed in front of the light output portion and includes a long inclined surface and a short inclined surface. The projecting lens has a light input surface and an arc light output surface. The lightening body projects an original light source opposite to the light input surface of the light guiding pipe. One part of lights of the lightening body is guided to the projecting lens for projecting a lighting pattern with a light-and-shad cut-off line, and the other part of lights is guided toward the lighting pattern to partially overlap the lighting pattern.

Abstract: The present invention provides a non-planar FET which includes a substrate, a fin structure, a gate and a gate dielectric layer. The fin structure is disposed on the substrate. The fin structure includes a first portion adjacent to the substrate wherein the first portion shrinks towards a side of the substrate. The gate is disposed on the fin structure. The gate dielectric layer is disposed between the fin structure and the gate. The present invention further provides a method of manufacturing the non-planar FET.

Abstract: In a rotary dynamic simulation device and an audiovisual apparatus using the same, the rotary dynamic simulation device includes a fixed table (1), a motion mechanism (4), a carrying seat (3), and a rotation mechanism (4). The motion mechanism (2) having multiple degrees of freedom is disposed between the fixed table (1) and the carrying seat (3). The rotation mechanism (4) is disposed on the rack (5) to drive the fixed table (1) to rotate, so that the carrying seat (3) is rotatable between an entering position and a watch position of the rack (5).

Abstract: A refrigerant heat dissipation apparatus has an evaporator, a condenser having a first condensing tube and a second condensing tube, a first refrigerant tube, two second refrigerant tubes, and a refrigerant. The first refrigerant tube is connected between the top of the evaporator and an upper part of a first condensing tube. The second refrigerant tubes are respectively connected with a lower part of the first condensing tube and a lower part of the second condensing tube, so as to form a multi-flow closed-loop cycle. The refrigerant is filled into the multi-flow closed-loop cycle. The controlling of cycling direction of the refrigerant achieves the efficiency in heat dissipating of the refrigerant heat dissipation apparatus.

Abstract: A cleaning process for oxide includes the following step. A substrate having a first area and a second area is provided. A first oxide layer is formed on the substrate of the first area and the second area. An ammonium hydroxide (NH4OH) and hydrogen peroxide (H2O2) containing process is performed on the first oxide layer of the first area and the second area. A photoresist layer covers the first oxide layer of the first area while exposing the first oxide layer of the second area. The first oxide layer of the second area is removed. The photoresist layer is then removed.