Abstract: A semiconductor structure includes an isolation structure disposed in a semiconductor substrate; a gate electrode and a resistor electrode disposed in the semiconductor substrate, wherein the isolation structure is disposed between the gate electrode and the resistor electrode, and the isolation structure is closer to the resistor electrode than the gate electrode. A source/drain (S/D) region is disposed in the semiconductor substrate and between the gate electrode and the isolation structure, wherein the S/D region is electrically connected to the resistor electrode. A conductive structure is disposed in the semiconductor structure and over the isolation structure, wherein the S/D region is electrically connected to the resistor electrode through the conductive structure.

Abstract: The present disclosure provides a semiconductor structure and a method of manufacturing the semiconductor structure. The semiconductor structure includes a substrate defined with a peripheral region and an array area at least partially surrounded by the peripheral region, wherein the substrate includes a plurality of fins protruding from the substrate and disposed in the array area, and a first elongated member protruding from the substrate and at least partially surrounding the plurality of fins; an insulating layer disposed over the plurality of fins and the first elongated member; a capping layer disposed over the insulating layer; and an isolation surrounding the plurality of fins, the first elongated member, the insulating layer and the capping layer.

Abstract: A semiconductor structure includes an isolation structure disposed in a semiconductor substrate; a gate electrode and a resistor electrode disposed in the semiconductor substrate, wherein the isolation structure is disposed between the gate electrode and the resistor electrode, and the isolation structure is closer to the resistor electrode than the gate electrode. A source/drain (S/D) region is disposed in the semiconductor substrate and between the gate electrode and the isolation structure, wherein the S/D region is electrically connected to the resistor electrode. A conductive structure is disposed in the semiconductor structure and over the isolation structure, wherein the S/D region is electrically connected to the resistor electrode through the conductive structure.

Abstract: The present disclosure is related to a method of forming a pattern, including the steps of: providing a structure including a substrate and a target layer, in which the target layer is disposed on the substrate, and the target layer includes a central area and a periphery area; forming a plurality of core patterns and a linear spacer pattern on the central area, in which a width of the linear spacer pattern is wider than 50 nm; covering a photoresist on the periphery area; removing a portion of the central area not covered by the plurality of core patterns and not covered by the linear spacer pattern to form a pattern in the central area, and removing the photoresist, the linear spacer pattern and the plurality of core patterns to expose the pattern.

Abstract: A detection method of a three-dimensional touch module includes: step S1, providing an input signal to a transmitting electrode layer; step S2, outputting a first output signal and transmitting the first output signal to a control module by a two-dimensional inputting assembly, and outputting a second output signal and transmitting the second output signal to the control module by a pressure sensing assembly; and step S3, determining, by the control module, a touch position according to the first output signal and a pressure value according to the second output signal. A three-dimensional touch module includes: a cover plate; a two-dimensional inputting assembly disposed under the cover plate and configured to output a first output signal; a pressure sensing assembly disposed under the cover plate and configured to output a second output signal; and a transmitting electrode layer disposed between the two-dimensional inputting assembly and the pressure sensing assembly.

Abstract: A semiconductor structure includes an isolation structure disposed in a semiconductor substrate; a gate electrode and a resistor electrode disposed in the semiconductor substrate, wherein the isolation structure is disposed between the gate electrode and the resistor electrode, and the isolation structure is closer to the resistor electrode than the gate electrode. A source/drain (S/D) region is disposed in the semiconductor substrate and between the gate electrode and the isolation structure, wherein the S/D region is electrically connected to the resistor electrode. A conductive structure is disposed in the semiconductor structure and over the isolation structure, wherein the S/D region is electrically connected to the resistor electrode through the conductive structure.

Abstract: An electronic apparatus includes a flexible cover plate, a force sensing module, a touch display module, and a metal thin plate. The force sensing module includes a flexible electrode and a flexible force-sensitive composite layer. The flexible force-sensitive composite layer includes at least one flexible electrode layer and at least one functional spacer layer. The flexible electrode layer has a first resistivity. The functional spacer layer has a second resistivity greater than the first resistivity. The flexible electrode layer and the functional spacer layer are disposed under the flexible electrode. The touch display module is disposed between the flexible cover plate and the force sensing module and includes an organic light emitting display unit and a touch sensing layer. The metal thin plate is disposed under the force sensing module and serves as a contact electrode of the force sensing module.

Abstract: A crimping apparatus comprising a press module connected with a pressing mold, a translation module, and a pressure control module is disclosed. The press module generates an action force on the pressing mold through a fluid. The translation module is coupled to the press module for driving the press module to move toward a flexible printed circuit having two isolated circuit layers such that one circuit layer is pressed to crimp to the other circuit layer, wherein the pressure control module adjusts the pressure within the press module to maintain a constant force on the pressing mold whereby the pressing mold can generate a constant stress acting on the flexible printed circuit during the crimping process. In addition, the crimping apparatus can be adapted in a roll-to-roll process for crimping two isolated circuit layers of each flexible printed circuit unit arranged on the roll.

Abstract: The present application discloses a method for fabricating a semiconductor device including providing a substrate, forming a growing base film above the substrate, forming a plurality of doped segments and a plurality of undoped segments in the growing base film, selectively forming a plurality of insulating segments on the plurality of undoped segments, removing the plurality of doped segments, and forming a plurality of capacitor structures above the substrate.

Abstract: In one example, an electronic device may include a power source to supply power to a peripheral device, a sensor circuit to monitor a power consumption of the peripheral device, and a controller coupled to the sensor circuit to detect that the power consumption of the peripheral device is greater than a threshold and generate a popup message on a user interface of the electronic device based on the detection. The popup message may include an option. Further, the controller may direct the power source to continue to provide the power to the peripheral device in response to a determination that the option is selected prior to an expiration of a timer.

Abstract: The invention relates to an electrochemical dephosphorylation technique for treating Alzheimer's disease and a use thereof. It comprises a gold electrode provided with a negative potential of ?0.2 V to ?0.6 V on a surface thereof.

Abstract: A polyurethane prepolymer composition is provided. The polyurethane prepolymer composition includes a first prepolymer, a second prepolymer and a third prepolymer. The first prepolymer includes a polyol and diisocyanates. The two ends of the polyol are connected with the diisocyanates. The second prepolymer includes a diisocyanate monomer. The third prepolymer includes a first diisocyanate, polyols and second diisocyanates. The two ends of the first diisocyanate are connected with the polyols. The other ends of the polyols are connected with the second diisocyanates. A polyurethane elastomer and a preparation method thereof are also provided.

Abstract: The present disclosure provides a semiconductor structure and a method of manufacturing the semiconductor structure. The semiconductor structure includes a base, a plurality of islands, and an isolation layer. At least one of the plurality of islands includes a pillar extending from an upper surface of the base, a protrusion connected to the pillar, a capping layer disposed on the protrusion, and a passivation liner disposed on sidewalls of the protrusion and the capping layer. The isolation layer surrounds the islands.

Abstract: A water cooling system includes a temperature control device which is connected with a first heat exchanger. A second heat exchanger includes a water temperature control path and a constant temperature water path. The water of the first heat exchanger is controlled by the temperature control device and flows to the water temperature control path. The water in the constant temperature water path tows through the second heat exchanger to proceed heat exchange with the water in the water temperature control path, and then flows to the target equipment. The temperature difference of the water flowing to the target equipment is smaller than that of conventional water cooling system.

Abstract: The present disclosure relates to an apparatus that includes a bottom electrode and a dielectric structure. The dielectric structure includes a first dielectric layer on the bottom electrode and the first dielectric layer has a first thickness. The apparatus also includes a blocking layer on the first dielectric layer and a second dielectric layer on the blocking layer. The second dielectric layer has a second thickness that is less than the first thickness. The apparatus further includes a top electrode over the dielectric structure.

Abstract: A flicker-free linear LED drive circuit is disclosed. The flicker-free linear LED drive circuit converts the input voltage of the external power supply to form an output current to the LED. The flicker-free linear LED drive circuit includes a measuring module, a regulating module and a rectifier module. The flicker-free linear LED drive circuit is characterized in that the measuring module is configured to measure the phase angle of the input voltage after full-wave rectification; the regulating module is used to form the complex voltage signal according to the measurement signal in the voltage waveform of the regulating module for the half-wave period, the conduction angle range formed at the fixed power is used as the basis for electrical conduction in the half-wave period of the input voltage.

Abstract: A water cooling system includes a temperature control device which is connected with a first heat exchanger. A second heat exchanger includes a water temperature control path and a constant temperature water path. The water of the first heat exchanger is controlled by the temperature control device and flows to the water temperature control path. The water in the constant temperature water path tows through the second heat exchanger to proceed heat exchange with the water in the water temperature control path, and then flows to the target equipment. The temperature difference of the water flowing to the target equipment is smaller than that of conventional water cooling system.

Abstract: The present application discloses a method for fabricating a semiconductor device including providing a substrate, forming a growing base film above the substrate, forming a plurality of doped segments and a plurality of undoped segments in the growing base film, selectively forming a plurality of insulating segments on the plurality of undoped segments, removing the plurality of doped segments, and forming a plurality of capacitor structures above the substrate.

Abstract: The invention relates to an electrochemical dephosphorylation technique for treating Alzheimer's disease and a use thereof. It comprises a gold electrode provided with a negative potential of ?0.2 V to ?0.6 V on a surface thereof.

Abstract: A virtual reality clamshell computing device includes a number of projection devices to project a three-dimensional image, a number of infrared OR illumination devices to illuminate a users hand, a number of IR sensors to detect IR wavelengths reflected off of the users hand, a processor, and a memory. The memory includes executable code that, when executed by the processor, extracts coordinate location data from the detected IR wavelengths reflected off of the users hand, interprets the coordinate location as a number of gestures performed by the user, and manipulates the display of the three-dimensional image based on the interpreted gestures.