Abstract: A FinFET structure with a gate structure having two notch features therein and a method of forming the same is disclosed. The FinFET notch features ensure that sufficient spacing is provided between the gate structure and source/drain regions of the FinFET to avoid inadvertent shorting of the gate structure to the source/drain regions. Gate structures of different sizes (e.g., different gate widths) and of different pattern densities can be provided on a same substrate and avoid inadvertent of shorting the gate to the source/drain regions through application of the notched features.

Abstract: A semiconductor structure includes a plurality of cells. Each cell has a plurality of transistors, a plurality of inner metal lines, two first backside power lines and one second backside power line. The inner metal lines, the first backside power lines and the second backside power line are disposed on a back side of the transistors. The inner metal lines, the first backside power lines and the second backside power line extend along a first axis. The second backside power line is disposed between the two first backside power lines. The inner metal lines are electrically connected to the first backside power lines and the transistors, and electrically connected to the second backside power line and the transistors. The cells are arranged along a second axis, the second axis being vertical to the first axis.

Abstract: A cable arrangement mechanism is provided, which is disposed inside the housing of an electronic device. The cable arrangement mechanism includes a first tube, a second tube, and a plurality of first resilient elements. The first tube includes a first base, a first extension connected to the first base and extending from a first inner surface, and a first extrusion connected to the first base and extending from a first outer surface. The second tube includes a second base, a second extension connected to the second base and extending from a second inner surface, and a second extrusion connected to the second base and extending from a second outer surface. The first resilient elements respectively connect the first extrusion and the second extrusion to the housing, so that the first tube and the second tube are rotatably connected to the housing.

Abstract: A semiconductor device includes a substrate; at least one trench located at a top surface of the substrate; and a first dielectric layer, a second dielectric layer and a third dielectric layer that are sequentially stacked on an inner wall of each of the at least one trench. A topmost surface of the first dielectric layer is lower than a topmost surface of the second dielectric layer and the top surface of the substrate, to form a first groove between the second dielectric layer and the substrate. An edge corner between the top surface of the substrate and the inner wall of each of the at least one trench is in a shape of a fillet curve. The fillet structure is smooth and round without a sharp corner, reducing point discharge and improving reliability of the shallow trench isolation structure.

Abstract: The current disclosure describes techniques for managing vertical alignment or overlay in semiconductor manufacturing using machine learning. Alignments of interconnection features in a fan-out WLP process are evaluated and managed through the disclosed techniques. Big data and neural networks system are used to correlate the overlay error source factors with overlay metrology categories. The overlay error source factors include tool related overlay source factors, wafer or die related overlay source factors and processing context related overlay error source factors.

Abstract: A flow guiding device in an immersion-cooled chassis of a server comprises at least one deflector located above a chip on a mainboard in the chassis, each deflector comprises a first end for mounting to the mainboard above the chip and a second end inclined away from the mainboard. The first end is immersed in coolant, the second end is higher than the first end; the deflector further comprises a hollow part including multiple through holes for interrupting upward movement vapor bubbles generated by the hot chip, which reduces probability of the vapor bubbles escaping from the coolant liquid and the chassis. A liquid-cooled chassis having the flow guiding device is also disclosed.

Abstract: The disclosure provides an electronic device. The electronic device includes a substrate, a transistor, and a variable capacitor. The transistor is disposed on the substrate. The variable capacitor is disposed on the substrate and adjacent to the transistor. A material of the transistor and a material of the variable capacitor both a include a III-V semiconductor material. The electronic device of an embodiment of the disclosure may simplify manufacturing process, reduce costs, or reduce dimensions.

Abstract: A manufacturing method of an electronic device is disclosed by the present disclosure. The manufacturing method includes providing a plurality of semiconductor elements; performing a packaging process on the plurality of semiconductor elements to form a plurality of packaged semiconductor elements, wherein the packaging process includes disposing a plurality of filling material layers respectively on a sidewall of each of the plurality of semiconductor elements; providing a substrate, wherein the substrate includes a plurality of working areas, and each of the plurality of working areas includes at least one first recess; and disposing the plurality of packaged semiconductor elements in the at least one first recess of each of the plurality of working areas through fluid transfer.

Abstract: A semiconductor device includes a first well region laterally separated from a second well region in a substrate, a shallow trench isolation (STI) structure laterally between the first well region and the second well region in the substrate, a first implant region of a dopant type opposite to a dopant type of the first well region in the substrate, disposed vertically lower than the STI structure and laterally between the first well region and a lateral center of the STI structure, and a second implant region of a dopant type opposite to a dopant type of the second well region in the substrate, disposed vertically lower than the STI structure and laterally between the second well region and the lateral center of the STI structure.

Abstract: A receiver for wired communication, includes a DC (direct current) level shift circuit and an analog-to-digital converter circuit. The DC level shift circuit is configured to receive a first signal and generate a second signal, in which the DC level shift circuit comprises a capacitor, and the DC level shift circuit is further configured to transmit a first common-mode voltage in a first voltage domain to a first terminal of the capacitor and transmit a second common-mode voltage in a second voltage domain to a second terminal of the capacitor before the first signal is received, and when the DC level shift circuit receives the first signal, the DC level shift circuit stops transmitting the first common-mode voltage and the second common-mode voltage to the capacitor. The analog-to-digital converter circuit is configured to generate a digital signal according to the second signal.

Abstract: The present invention relates methods for treating thyroid cancer, renal cell carcinoma or hepatocellar carcinoma comprising orally administering to a patient in need of such therapy a therapeutic amount of cabozantinib lauryl sulfate salt, preferably in a capsule form. The method allows the administration of the therapeutic amount of cabozantinib lauryl sulfate salt in a fed state or a fasted state and the administration does not exhibit a food effect.

Abstract: A semiconductor device includes a first conductive layer, a second conductive layer, a third conductive layer, a first organic layer, a first inorganic layer and a first silicon-containing layer. The third conductive layer is disposed between and electrically isolated from the first conductive layer and the second conductive layer. The first organic layer continuously covers the first conductive layer and the third conductive layer. The first inorganic layer is disposed over the first organic layer. The first silicon-containing layer is inserted between the first organic layer and the first inorganic layer, wherein the second conductive layer is disposed on and disposed in the first organic layer, the first silicon-containing layer and the first inorganic layer, to electrically connect to the first conductive layer.

Abstract: Provided herein are systems and methods for determining the topology of a molecule from mass spectrometry data.

Abstract: A semiconductor device according to the present disclosure includes a semiconductor layer, a plurality of metal isolation features disposed in the semiconductor layer, wherein certain of the metal isolation features extend through the substrate to provide for full isolation between adjacent photodetectors and certain of the metal isolation features extend partially through the semiconductor layer to provide partially isolation between adjacent photodetectors.

Abstract: A slide rail assembly includes a first rail, a second rail, an elastic member, a movable member and an electronic module. The second rail is movable relative to the first rail. When the second rail is located at a retracted position relative to the first rail and when the movable member is in a locking state, the elastic member is configured to be locked to accumulate the elastic force. The electronic module includes a driving device configured to drive the movable member to switch from the locking state to an unlocking state, in order to release the elastic force of the elastic member, such that the second rail is moved from the retracted position along an opening direction relative to the first rail in response to the elastic force of the elastic member.

Abstract: The present application relates to a silicone oil-based immersion coolant for an electronic component. The silicone oil-based immersion coolant for an electronic component includes a base oil and an additive. The base oil includes a low-viscosity silicone oil. The additive includes a silicone oil diluent and a thermally conductive inorganic filler. The viscosity of the low-viscosity silicone oil is less than or equal to 1000 cSt. The thermally conductive inorganic filler is an insulating filler. Based on the mass of the immersion coolant, a mass percentage content of the base oil is in a range from 70% to 85%, a mass percentage content of the silicone oil diluent is in a range from 10% to 20%, and a mass percentage content of the thermally conductive inorganic filler is in a range from 5% to 10%.

Abstract: The present disclosure is related to a semiconductor device and a fabricating method thereof, and the semiconductor device includes a first dielectric layer and a first conductive structure. The first dielectric layer includes a stacked structure including a low-k dielectric layer, an etching stop layer, and a carbon-rich dielectric layer between the low-k dielectric layer and the etching stop layer, wherein a carbon concentration within the carbon-rich dielectric layer is above 15%. The first conductive structure is disposed in the first dielectric layer.

Abstract: A semiconductor device includes a plurality of channel layers vertically separated from one another. The semiconductor device also includes an active gate structure comprising a lower portion and an upper portion. The lower portion wraps around each of the plurality of channel layers. The semiconductor device further includes a gate spacer extending along a sidewall of the upper portion of the active gate structure. The gate spacer has a bottom surface. Moreover, a dummy gate dielectric layer is disposed between the gate spacer and a topmost channel layer of plurality of channel layers. The dummy gate dielectric layer is in contact with a top surface of the topmost channel layer, the bottom surface of the gate spacer, and the sidewall of the gate structure.

Abstract: A memory circuit includes a first driver circuit, a memory cell array including a first column of memory cells, a first transistor coupled between the first driver circuit and the memory cell array, a second driver circuit, a first column of tracking cells and a header circuit coupled to the first driver circuit and the second driver circuit. The first transistor is configured to receive a first select signal. The first column of tracking cells is configured to track a leakage current of the first column of memory cells, and is coupled between a first conductive line and a second conductive line, the first conductive line being coupled to the second driver circuit.