Patents by Inventor Cheng-Chi Lin

Cheng-Chi Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12046609
    Abstract: A solid-state image sensor is provided. The solid-state image sensor includes photoelectric conversion elements and a color filter layer disposed above the photoelectric conversion elements. The photoelectric conversion elements and the color filter layer form normal pixels and auto-focus pixels, the color filter layer that correspond to the normal pixels are divided into first color filter segments and second color filter segments, the first color filter segments are disposed on at least one side that is closer to an incident light, and the width of the first color filter segments is greater than the width of the second color filter segments.
    Type: Grant
    Filed: October 7, 2021
    Date of Patent: July 23, 2024
    Assignee: VISERA TECHNOLOGIES COMPANY LIMITED
    Inventors: Ching-Hua Li, Cheng-Hsuan Lin, Zong-Ru Tu, Yu-Chi Chang, Han-Lin Wu
  • Patent number: 12043770
    Abstract: A temporary bonding composition is provided. The temporary bonding composition includes a polyfunctional crosslinker, a polymer and a solvent. The polyfunctional crosslinker includes a compound containing at least two functional groups selected from the group consisting of blocked isocyanate groups, alkenyl ether groups, and alkoxyhydrocarbyl groups. Each of the blocked isocyanate groups is an isocyanate group blocked by a blocking agent. The polymer has a functional group reacting with the polyfunctional crosslinker.
    Type: Grant
    Filed: December 29, 2019
    Date of Patent: July 23, 2024
    Assignee: Daxin Materials Corporation
    Inventors: Cheng-Wei Lee, Pei-Ci Cho, Chun-Hung Huang, Min-Chi Yang, Chi-Yen Lin, Yuan-Li Liao
  • Publication number: 20240244740
    Abstract: A ground point fixing device for a power supply module includes an engaging part and a fastening part. The engaging part includes an engaging body, a joining portion and an engaging portion. The engagement body has a body outer diameter and a body surface larger than a grounding hole on a power supply module circuit board. The joining portion is disposed on the body surface and has a joining portion outer diameter smaller than the grounding hole. The engagement portion is disposed on the body surface and around an outer circumference of the joining portion. The joining portion is passed through the grounding hole to be connected to the fastening part, so that the engagement portion of the engaging part is engaged in the grounding hole, and the fastening part and the engagement body of the engaging part are respectively fixed on an upper surface and a lower surface of the circuit board.
    Type: Application
    Filed: November 9, 2023
    Publication date: July 18, 2024
    Inventors: Yu-Heng LIN, Cheng-Chi YANG, Yung-Han KUO
  • Publication number: 20240243466
    Abstract: A wireless briefing device includes a first antenna, a second antenna, and a ground plane. Each of the first antenna and the second antenna couples out a frequency band. A distance between the first antenna and the ground plane is between 0.2 and 0.3 times of a wavelength of the frequency band, and a distance between the second antenna and the ground plane is between 0.2 and 0.3 times of the wavelength of the frequency band.
    Type: Application
    Filed: June 19, 2023
    Publication date: July 18, 2024
    Applicant: BENQ CORPORATION
    Inventors: Yu-Ping Huang, Chun-Han Lin, Chen-Chi Wu, Chia-Nan Shih, Cheng-Pu Lin
  • Patent number: 12040382
    Abstract: Embodiments include nanostructure devices and methods of forming nanostructure devices which include a treatment process to expand a sidewall spacer material to close a seam in the sidewall spacer material after deposition. The treatment process includes oxidation anneal and heat anneal to expand the sidewall spacer material and crosslink the open seam to form a closed seam, lower k-value, and decrease density.
    Type: Grant
    Filed: May 17, 2021
    Date of Patent: July 16, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Li-Chi Yu, Cheng-I Chu, Chen-Fong Tsai, Yi-Rui Chen, Sen-Hong Syue, Wen-Kai Lin, Yoh-Rong Liu, Huicheng Chang, Yee-Chia Yeo
  • Patent number: 11999944
    Abstract: A method for promoting growth of a probiotic microorganism includes cultivating the probiotic microorganism in a growth medium containing a fermented culture of lactic acid bacterial strains that include Lactobacillus salivarius subsp. salicinius AP-32 deposited at the China Center for Type Culture Collection (CCTCC) under CCTCC M 2011127, Lactobacillus plantarum LPL28 deposited at the China General Microbiological Culture Collection Center (CGMCC) under CGMCC 17954, Lactobacillus acidophilus TYCA06 deposited at the CGMCC under CGMCC 15210, and Bifidobacterium longum subsp. infantis BLI-02 deposited at the CGMCC under CGMCC 15212.
    Type: Grant
    Filed: April 19, 2022
    Date of Patent: June 4, 2024
    Assignee: GLAC BIOTECH CO., LTD.
    Inventors: Hsieh-Hsun Ho, Ching-Wei Chen, Yu-Fen Huang, Cheng-Chi Lin, Chen-Hung Hsu, Tsai-Hsuan Yi, Yu-Wen Chu, Yi-Wei Kuo, Jui-Fen Chen, Shin-Yu Tsai
  • Patent number: 11969447
    Abstract: A composition for promoting defecation includes a cell culture of at least one lactic acid bacterial strain which is substantially free of cells. The least one lactic acid bacterial strain is selected from the group consisting of Lactobacillus salivarius subsp. salicinius AP-32, Bifidobacterium animalis subsp. lactis CP-9, and Lactobacillus acidophilus TYCA06, which are respectively deposited at the Bioresource Collection and Research Center (BCRC) under accession numbers BCRC 910437, BCRC 910645 and BCRC 910813. Also disclosed is a method for promoting defecation, including administering to a subject in need thereof an effective amount of the composition.
    Type: Grant
    Filed: March 17, 2021
    Date of Patent: April 30, 2024
    Assignee: GLAC BIOTECH CO., LTD.
    Inventors: Hsieh-Hsun Ho, Ching-Wei Chen, Yi-Wei Kuo, Yu-Fen Huang, Cheng-Chi Lin
  • Patent number: 11717546
    Abstract: The present invention provides a method for promoting defecation, comprising administering a composition which includes: a fermentation powder of lactic acid bacteria and a physiologically acceptable excipient, diluent, or carrier. The fermentation powder includes: a fermentation product of lactic acid bacteria, the fermentation product is obtained by incubating lactic acid bacterial strains in a culture medium containing milk, milk powders, casein, soy beans, bean products, or whey, and the lactic acid bacterial strains include: a Lactobacillus salivarius subsp. salicinius AP-32 strain, a Lactobacillus plantarum LPL28 strain, a Lactobacillus acidophilus TYCA06 strain, and a Bifidobacterium longum subsp. infantis BLI-02 strain.
    Type: Grant
    Filed: May 3, 2021
    Date of Patent: August 8, 2023
    Assignee: GLAC BIOTECH CO., LTD
    Inventors: Hsieh-Hsun Ho, Ching-Wei Chen, Yi-Wei Kuo, Yu-Fen Huang, Jui-Fen Chen, Cheng-Chi Lin
  • Publication number: 20230100778
    Abstract: Disclosed herein is a method for promoting growth of a probiotic microorganism. The method includes cultivating the probiotic microorganism in a growth medium containing a fermented culture of lactic acid bacterial strains that include Lactobacillus salivarius subsp. salicinius AP-32 deposited at the China Center for Type Culture Collection (CCTCC) under CCTCC M 2011127, Lactobacillus plantarum LPL28 deposited at the China General Microbiological Culture Collection Center (CGMCC) under CGMCC 17954, Lactobacillus acidophilus TYCA06 deposited at the CGMCC under CGMCC 15210, and Bifidobacterium longum subsp. infantis BLI-02 deposited at the CGMCC under CGMCC 15212.
    Type: Application
    Filed: April 19, 2022
    Publication date: March 30, 2023
    Inventors: Hsieh-Hsun HO, Ching-Wei CHEN, Yu-Fen HUANG, Cheng-Chi LIN, Chen-Hung HSU, Tsai-Hsuan YI, Yu-Wen CHU, Yi-Wei KUO, Jui-Fen CHEN, Shin-Yu TSAI
  • Patent number: 11222887
    Abstract: A transient voltage suppression device including a substrate of a first conductivity type, a first well of a second conductivity type, a first anode, a first cathode, and a first trigger node is provided. The first well is disposed in the substrate. The first anode is disposed in the substrate outside the first well and includes a second doped region of the second conductivity type and a third doped region of the first conductivity type disposed between the second doped region and the first doped region. The first trigger node is disposed between the first anode and the first cathode, and includes a fourth region of the first conductivity type disposed in the substrate and a fifth doped region of the second conductivity type at least partially disposed in the first well and disposed between the fourth doped region and the third doped region.
    Type: Grant
    Filed: June 24, 2020
    Date of Patent: January 11, 2022
    Assignee: IPU SEMICONDUCTOR CO., LTD.
    Inventors: Cheng-Chi Lin, Chih-Hao Chen
  • Publication number: 20210401908
    Abstract: The present invention provides a composition for promoting defecation, which includes: a fermentation powder of lactic acid bacteria and a physiologically acceptable excipient, diluent, or carrier. The fermentation powder includes: a fermentation product of lactic acid bacteria, the fermentation product is obtained by incubating lactic acid bacterial strains in a culture medium containing milk, milk powders, casein, soy beans, bean products, or whey, and the lactic acid bacterial strains include: a Lactobacillus salivarius subsp. salicinius AP-32 strain, a Lactobacillus plantarum LPL28 strain, a Lactobacillus acidophilus TYCA06 strain, and a Bifidobacterium longum subsp. infantis BLI-02 strain.
    Type: Application
    Filed: May 3, 2021
    Publication date: December 30, 2021
    Inventors: Hsieh-Hsun HO, Ching-Wei CHEN, Yi-Wei KUO, Yu-Fen HUANG, Jui-Fen CHEN, Cheng-Chi LIN
  • Publication number: 20210401906
    Abstract: A composition for promoting defecation includes a cell culture of at least one lactic acid bacterial strain which is substantially free of cells. The least one lactic acid bacterial strain is selected from the group consisting of Lactobacillus salivarius subsp. salicinius AP-32, Bifidobacterium animalis subsp. lactis CP-9, and Lactobacillus acidophilus TYCA06, which are respectively deposited at the Bioresource Collection and Research Center (BCRC) under accession numbers BCRC 910437, BCRC 910645 and BCRC 910813. Also disclosed is a method for promoting defecation, including administering to a subject in need thereof an effective amount of the composition.
    Type: Application
    Filed: March 17, 2021
    Publication date: December 30, 2021
    Inventors: Hsieh-Hsun Ho, Ching-Wei Chen, Yi-Wei Kuo, Yu-Fen Huang, Cheng-Chi Lin
  • Publication number: 20210020625
    Abstract: A transient voltage suppression device including a substrate of a first conductivity type, a first well of a second conductivity type, a first anode, a first cathode, and a first trigger node is provided. The first well is disposed in the substrate. The first anode is disposed in the substrate outside the first well and includes a second doped region of the second conductivity type and a third doped region of the first conductivity type disposed between the second doped region and the first doped region. The first trigger node is disposed between the first anode and the first cathode, and includes a fourth region of the first conductivity type disposed in the substrate and a fifth doped region of the second conductivity type at least partially disposed in the first well and disposed between the fourth doped region and the third doped region.
    Type: Application
    Filed: June 24, 2020
    Publication date: January 21, 2021
    Applicant: uPI Semiconductor Corp.
    Inventors: Cheng-Chi Lin, Chih-Hao Chen
  • Patent number: 10256307
    Abstract: A semiconductor device is provided. The semiconductor device includes a first doped region and a second doped region of a first conductive type and a third doped region of a second conductive type located in a substrate. The second doped region is located at a side of the first doped region. A top-view pattern of the second doped region has at least one recess portion. The third doped region is located between the first doped region and the second doped region. A top-view pattern of the third doped region has at least one protruded portion corresponding to the at least one recess portion.
    Type: Grant
    Filed: May 8, 2017
    Date of Patent: April 9, 2019
    Assignee: MACRONIX International Co., Ltd.
    Inventors: Yu-Chin Chien, Ching-Lin Chan, Cheng-Chi Lin
  • Publication number: 20180323266
    Abstract: A semiconductor device is provided. The semiconductor device includes a first doped region and a second doped region of a first conductive type and a third doped region of a second conductive type located in a substrate. The second doped region is located at a side of the first doped region. A top-view pattern of the second doped region has at least one recess portion. The third doped region is located between the first doped region and the second doped region. A top-view pattern of the third doped region has at least one protruded portion corresponding to the at least one recess portion.
    Type: Application
    Filed: May 8, 2017
    Publication date: November 8, 2018
    Applicant: MACRONIX International Co., Ltd.
    Inventors: Yu-Chin Chien, Ching-Lin Chan, Cheng-Chi Lin
  • Patent number: 10121889
    Abstract: A high voltage semiconductor device including a P type substrate, a high voltage N type well, a first P type well, a drift region, and a P type doping layer is provided. The high voltage N type well and the P type doping layer, which is formed in a region located below the first P type well and the drift region, are formed in the P type substrate. The first P type well is formed in the high voltage N type well. A bottom of the first P type well and a bottom of the P type doping layer are separated from a surface of the P type substrate by a first depth and a second depth larger than the first depth, respectively. The drift region is formed in the high voltage N type well and extending down from the surface of the P type substrate.
    Type: Grant
    Filed: August 29, 2014
    Date of Patent: November 6, 2018
    Assignee: MACRONIX INTERNATIONAL CO., LTD.
    Inventors: Ching-Lin Chan, Cheng-Chi Lin, Shyi-Yuan Wu
  • Patent number: 10096722
    Abstract: A semiconductor device having a fast recovery diode (FRD) is provided. The semiconductor device includes a substrate, a first well region disposed in the substrate, a base region disposed in the first well region, a first impurity region of a first conductivity type disposed in the base region, a second impurity region of a second conductivity type disposed in the first well region and separated from the base region, a first electrode electrically connected to the base region and the first impurity region, and a second electrode electrically connected to the second impurity region.
    Type: Grant
    Filed: October 4, 2016
    Date of Patent: October 9, 2018
    Assignee: MACRONIX International Co., Ltd.
    Inventors: Chun-Ming Chiou, Cheng-Chi Lin
  • Publication number: 20180097124
    Abstract: A semiconductor device having a fast recovery diode (FRD) is provided. The semiconductor device includes a substrate, a first well region disposed in the substrate, a base region disposed in the first well region, a first impurity region of a first conductivity type disposed in the base region, a second impurity region of a second conductivity type disposed in the first well region and separated from the base region, a first electrode electrically connected to the base region and the first impurity region, and a second electrode electrically connected to the second impurity region.
    Type: Application
    Filed: October 4, 2016
    Publication date: April 5, 2018
    Applicant: MACRONIX International Co., Ltd.
    Inventors: Chun-Ming Chiou, Cheng-Chi Lin
  • Patent number: 9773784
    Abstract: A semiconductor structure and a method for manufacturing the same are provided. The semiconductor structure comprises a substrate, a device region, a first doped region and a gate structure. The first doped region is formed in the substrate adjacent to the device region. The gate structure is on the first doped region. The first doped region is overlapped the gate structure.
    Type: Grant
    Filed: August 24, 2012
    Date of Patent: September 26, 2017
    Assignee: MACRONIX INTERNATIONAL CO., LTD.
    Inventors: Chieh-Chih Chen, Cheng-Chi Lin, Shih-Chin Lien, Shyi-Yuan Wu
  • Patent number: 9735291
    Abstract: A semiconductor device includes a substrate; a well region of a first-conductivity-type, disposed in the substrate; a first impurity region of a first-conductivity-type disposed in the well region; a second impurity region of the second-conductivity-type disposed in the well region, the second-conductivity-type being opposite to the first-conductivity-type; a third impurity region disposed in the well region, a portion of the first impurity region overlapping a first portion of the third impurity region, a portion of the second impurity region overlapping a second portion of the third impurity region, and a third portion of the third impurity region being disposed between the first impurity region and the second impurity region; and a fourth impurity region and a barrier layer disposed in the substrate, the fourth impurity region and the barrier layer enclosing the well region from around and below, respectively.
    Type: Grant
    Filed: March 10, 2016
    Date of Patent: August 15, 2017
    Assignee: Macronix International Co., Ltd.
    Inventors: Chun-Ming Chiou, Yu-Jui Chang, Cheng-Chi Lin