Abstract: A two-way driving device for use with a valve component includes: a body; a pneumatic sleeve disposed in the body and being movable upward and downward; an axle disposed partially in the pneumatic sleeve, movable forward and backward, and connected to at least one transverse piston movable forward and backward; a first gas duct for admitting a gas to drive the pneumatic sleeve upward; a second gas duct for admitting a gas to drive the transverse piston moving forward and drive the axle ascending and moving transversely; a third gas duct for admitting a gas to drive the transverse piston moving backward; and a fourth gas duct for admitting a gas to drive the pneumatic sleeve downward and drive the axle retracting transversely and descending.

Abstract: A method for promoting growth of a probiotic microorganism includes cultivating the probiotic microorganism in a growth medium containing a fermented culture of lactic acid bacterial strains that include Lactobacillus salivarius subsp. salicinius AP-32 deposited at the China Center for Type Culture Collection (CCTCC) under CCTCC M 2011127, Lactobacillus plantarum LPL28 deposited at the China General Microbiological Culture Collection Center (CGMCC) under CGMCC 17954, Lactobacillus acidophilus TYCA06 deposited at the CGMCC under CGMCC 15210, and Bifidobacterium longum subsp. infantis BLI-02 deposited at the CGMCC under CGMCC 15212.

Abstract: A composition for promoting defecation includes a cell culture of at least one lactic acid bacterial strain which is substantially free of cells. The least one lactic acid bacterial strain is selected from the group consisting of Lactobacillus salivarius subsp. salicinius AP-32, Bifidobacterium animalis subsp. lactis CP-9, and Lactobacillus acidophilus TYCA06, which are respectively deposited at the Bioresource Collection and Research Center (BCRC) under accession numbers BCRC 910437, BCRC 910645 and BCRC 910813. Also disclosed is a method for promoting defecation, including administering to a subject in need thereof an effective amount of the composition.

Abstract: The present invention provides a method for promoting defecation, comprising administering a composition which includes: a fermentation powder of lactic acid bacteria and a physiologically acceptable excipient, diluent, or carrier. The fermentation powder includes: a fermentation product of lactic acid bacteria, the fermentation product is obtained by incubating lactic acid bacterial strains in a culture medium containing milk, milk powders, casein, soy beans, bean products, or whey, and the lactic acid bacterial strains include: a Lactobacillus salivarius subsp. salicinius AP-32 strain, a Lactobacillus plantarum LPL28 strain, a Lactobacillus acidophilus TYCA06 strain, and a Bifidobacterium longum subsp. infantis BLI-02 strain.

Abstract: Disclosed herein is a method for promoting growth of a probiotic microorganism. The method includes cultivating the probiotic microorganism in a growth medium containing a fermented culture of lactic acid bacterial strains that include Lactobacillus salivarius subsp. salicinius AP-32 deposited at the China Center for Type Culture Collection (CCTCC) under CCTCC M 2011127, Lactobacillus plantarum LPL28 deposited at the China General Microbiological Culture Collection Center (CGMCC) under CGMCC 17954, Lactobacillus acidophilus TYCA06 deposited at the CGMCC under CGMCC 15210, and Bifidobacterium longum subsp. infantis BLI-02 deposited at the CGMCC under CGMCC 15212.

Abstract: A transient voltage suppression device including a substrate of a first conductivity type, a first well of a second conductivity type, a first anode, a first cathode, and a first trigger node is provided. The first well is disposed in the substrate. The first anode is disposed in the substrate outside the first well and includes a second doped region of the second conductivity type and a third doped region of the first conductivity type disposed between the second doped region and the first doped region. The first trigger node is disposed between the first anode and the first cathode, and includes a fourth region of the first conductivity type disposed in the substrate and a fifth doped region of the second conductivity type at least partially disposed in the first well and disposed between the fourth doped region and the third doped region.

Abstract: The present invention provides a composition for promoting defecation, which includes: a fermentation powder of lactic acid bacteria and a physiologically acceptable excipient, diluent, or carrier. The fermentation powder includes: a fermentation product of lactic acid bacteria, the fermentation product is obtained by incubating lactic acid bacterial strains in a culture medium containing milk, milk powders, casein, soy beans, bean products, or whey, and the lactic acid bacterial strains include: a Lactobacillus salivarius subsp. salicinius AP-32 strain, a Lactobacillus plantarum LPL28 strain, a Lactobacillus acidophilus TYCA06 strain, and a Bifidobacterium longum subsp. infantis BLI-02 strain.

Abstract: A composition for promoting defecation includes a cell culture of at least one lactic acid bacterial strain which is substantially free of cells. The least one lactic acid bacterial strain is selected from the group consisting of Lactobacillus salivarius subsp. salicinius AP-32, Bifidobacterium animalis subsp. lactis CP-9, and Lactobacillus acidophilus TYCA06, which are respectively deposited at the Bioresource Collection and Research Center (BCRC) under accession numbers BCRC 910437, BCRC 910645 and BCRC 910813. Also disclosed is a method for promoting defecation, including administering to a subject in need thereof an effective amount of the composition.

Abstract: A transient voltage suppression device including a substrate of a first conductivity type, a first well of a second conductivity type, a first anode, a first cathode, and a first trigger node is provided. The first well is disposed in the substrate. The first anode is disposed in the substrate outside the first well and includes a second doped region of the second conductivity type and a third doped region of the first conductivity type disposed between the second doped region and the first doped region. The first trigger node is disposed between the first anode and the first cathode, and includes a fourth region of the first conductivity type disposed in the substrate and a fifth doped region of the second conductivity type at least partially disposed in the first well and disposed between the fourth doped region and the third doped region.

Abstract: A semiconductor device is provided. The semiconductor device includes a first doped region and a second doped region of a first conductive type and a third doped region of a second conductive type located in a substrate. The second doped region is located at a side of the first doped region. A top-view pattern of the second doped region has at least one recess portion. The third doped region is located between the first doped region and the second doped region. A top-view pattern of the third doped region has at least one protruded portion corresponding to the at least one recess portion.

Abstract: A semiconductor device is provided. The semiconductor device includes a first doped region and a second doped region of a first conductive type and a third doped region of a second conductive type located in a substrate. The second doped region is located at a side of the first doped region. A top-view pattern of the second doped region has at least one recess portion. The third doped region is located between the first doped region and the second doped region. A top-view pattern of the third doped region has at least one protruded portion corresponding to the at least one recess portion.

Abstract: A high voltage semiconductor device including a P type substrate, a high voltage N type well, a first P type well, a drift region, and a P type doping layer is provided. The high voltage N type well and the P type doping layer, which is formed in a region located below the first P type well and the drift region, are formed in the P type substrate. The first P type well is formed in the high voltage N type well. A bottom of the first P type well and a bottom of the P type doping layer are separated from a surface of the P type substrate by a first depth and a second depth larger than the first depth, respectively. The drift region is formed in the high voltage N type well and extending down from the surface of the P type substrate.

Abstract: A semiconductor device having a fast recovery diode (FRD) is provided. The semiconductor device includes a substrate, a first well region disposed in the substrate, a base region disposed in the first well region, a first impurity region of a first conductivity type disposed in the base region, a second impurity region of a second conductivity type disposed in the first well region and separated from the base region, a first electrode electrically connected to the base region and the first impurity region, and a second electrode electrically connected to the second impurity region.

Abstract: A semiconductor device having a fast recovery diode (FRD) is provided. The semiconductor device includes a substrate, a first well region disposed in the substrate, a base region disposed in the first well region, a first impurity region of a first conductivity type disposed in the base region, a second impurity region of a second conductivity type disposed in the first well region and separated from the base region, a first electrode electrically connected to the base region and the first impurity region, and a second electrode electrically connected to the second impurity region.

Abstract: A semiconductor structure and a method for manufacturing the same are provided. The semiconductor structure comprises a substrate, a device region, a first doped region and a gate structure. The first doped region is formed in the substrate adjacent to the device region. The gate structure is on the first doped region. The first doped region is overlapped the gate structure.

Abstract: A semiconductor device includes a substrate; a well region of a first-conductivity-type, disposed in the substrate; a first impurity region of a first-conductivity-type disposed in the well region; a second impurity region of the second-conductivity-type disposed in the well region, the second-conductivity-type being opposite to the first-conductivity-type; a third impurity region disposed in the well region, a portion of the first impurity region overlapping a first portion of the third impurity region, a portion of the second impurity region overlapping a second portion of the third impurity region, and a third portion of the third impurity region being disposed between the first impurity region and the second impurity region; and a fourth impurity region and a barrier layer disposed in the substrate, the fourth impurity region and the barrier layer enclosing the well region from around and below, respectively.

Abstract: A semiconductor structure and a method for forming the same are provided. The semiconductor structure comprises a first doped region, a second doped region, a doped strip and a top doped region. The first doped region has a first type conductivity. The second doped region is formed in the first doped region and has a second type conductivity opposite to the first type conductivity. The doped strip is formed in the first doped region and has the second type conductivity. The top doped region is formed in the doped strip and has the first type conductivity. The top doped region has a first sidewall and a second sidewall opposite to the first sidewall. The doped strip is extended beyond the first sidewall or the second sidewall.

Abstract: A semiconductor device includes a substrate, a well region of a first-conductivity type disposed in the substrate, a first impurity region of a second-conductivity type and having a plurality of branches disposed in the well region, a second impurity region of the first-conductivity type and having a plurality of branches, and a third impurity region of the first-conductivity type disposed in the well region. The second-conductivity type is opposite to the first-conductivity type. A portion of the first impurity region overlaps a portion of the third impurity region. The plurality of branches of the second impurity region are disposed in the third impurity region, and a portion of the third impurity region is disposed between the first impurity region and the second impurity region.

Abstract: A semiconductor device includes a substrate having a first conductivity type, a high-voltage well having a second conductivity type and disposed in the substrate, a high-voltage doped region having the first conductivity type and disposed in the high-voltage well, a drain region disposed in the high-voltage well and spaced apart from the high-voltage doped region, a source region disposed in the high-voltage doped region, a first gate structure disposed above a first side portion of the high-voltage doped region between the source region and the drain region, and a second gate structure disposed above a second and opposite side portion of the high-voltage doped region.

Abstract: A semiconductor device includes a substrate, a well region of a first-conductivity type disposed in the substrate, a first impurity region of a second-conductivity type and having a plurality of branches disposed in the well region, a second impurity region of the first-conductivity type and having a plurality of branches, and a third impurity region of the first-conductivity type disposed in the well region. The second-conductivity type is opposite to the first-conductivity type. A portion of the first impurity region overlaps a portion of the third impurity region. The plurality of branches of the second impurity region are disposed in the third impurity region, and a portion of the third impurity region is disposed between the first impurity region and the second impurity region.