Patents by Inventor Cheng-Chieh Chang

Cheng-Chieh Chang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20090092850
    Abstract: An extreme low resistivity light attenuation anti-reflection coating with a transparent surface conductive layer includes a substrate, a coating module, and a composed protection coating layer. The coating module is formed on a front surface of the substrate. The coating module is composed of a plurality of mixture coating layers and a plurality of metal coating layers that are alternately stacked with each other. Each mixture coating layer is composed of silicon carbide compound and Ti-based oxide. The composed protection coating layer is formed on the coating module.
    Type: Application
    Filed: October 5, 2007
    Publication date: April 9, 2009
    Inventors: Cheng-Chieh Chang, Shiu-Feng Liu, Pi-Jui Kuo
  • Publication number: 20090092808
    Abstract: An extreme low resistivity light attenuation anti-reflection coating with a transparent surface conductive layer includes a substrate, a coating module, and a composed protection coating layer. The coating module is formed on a front surface of the substrate. The coating module is composed of a plurality of mixture coating layers and a plurality of metal coating layers that are alternately stacked with each other. Each mixture coating layer is composed of Ti-based oxide and carbon. The composed protection coating layer is formed on the coating module.
    Type: Application
    Filed: October 5, 2007
    Publication date: April 9, 2009
    Inventors: Cheng-Chieh Chang, Shiu-Feng Liu, Pi-Jui Kuo
  • Publication number: 20090092825
    Abstract: A extreme low resistivity light attenuation anti-reflection coating structure includes a substrate, a coating module, and a composed protection coating layer. The coating module is formed on a front surface of the substrate. The coating module is composed of a plurality of Ti-based oxide coating layers and a plurality of metal coating layers that are alternately stacked with each other. The composed protection coating layer is formed on the coating module.
    Type: Application
    Filed: October 5, 2007
    Publication date: April 9, 2009
    Inventors: Cheng-Chieh Chang, Shiu-Feng Liu, Pi-Jui Kuo
  • Publication number: 20080248219
    Abstract: An anti-reflection coating anti-reflection coating with low resistivity function and transparent conductive coating as outermost layer is disclosed. The anti-reflection coating contains a transparent conductive oxide as a surface layer and has a photo reflectance below 0.5%. The resistivity of the anti-reflection coating is between 0.5? and 0.7? per square, and its transparency is between 55% and 70%.
    Type: Application
    Filed: April 4, 2007
    Publication date: October 9, 2008
    Inventor: Cheng-Chieh Chang
  • Publication number: 20080226887
    Abstract: A low resistivity light attenuation anti-reflection coating with a transparent surface conductive layer is disclosed. The multi-layered structure of the low resistivity light attenuation anti-reflection coating is HL (HL)6HL (H: a material scoring high on the refractive index, L: a material scoring low on the refractive index). There are 8 oxide layers, and the material of the surface layer is a transparent conductive coating and scores between 1.9 and 2.0 on the refractive index.
    Type: Application
    Filed: March 13, 2007
    Publication date: September 18, 2008
    Inventor: Cheng-Chieh Chang
  • Patent number: 6323719
    Abstract: A pseudo bipolar junction transistor according to the invention includes two MOS transistors operating in saturation region, electrically connected in parallel with their drains and sources functioning as a collector and a emitter of the pseudo bipolar junction transistor, respectively, a first gate without any signal inputted and a second gate functioning as a base of the pseudo bipolar junction transistor, wherein the two gates is supplied with the same DC bias. The pseudo bipolar junction transistor is manufactured by CMOS process for applications in variable gain amplifiers, transfer linear function signal processors and logarithmic filters.
    Type: Grant
    Filed: May 8, 2000
    Date of Patent: November 27, 2001
    Assignee: National Science Council
    Inventors: Cheng-Chieh Chang, Shen-Iuan Liu