Patents by Inventor Cheng-chieh Hsieh

Cheng-chieh Hsieh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210090993
    Abstract: A package structure includes a first semiconductor die, an insulating encapsulant, a plurality of first through insulator vias, a plurality of second through insulator vias, and a redistribution layer. The insulating encapsulant is encapsulating the first semiconductor die. The first through insulator vias are located in a central area of the insulating encapsulant surrounding the first semiconductor die. The second through insulator vias are located in a peripheral area of the insulating encapsulant surrounding the plurality of first through insulator vias located in the central area, wherein an aspect ratio of the plurality of second through insulator vias is greater than an aspect ratio of the plurality of first through insulator vias. The redistribution layer is disposed on the insulating encapsulant and electrically connected to the first semiconductor die, the plurality of first through insulator vias and the plurality of second through insulator vias.
    Type: Application
    Filed: January 21, 2020
    Publication date: March 25, 2021
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Tsung-Yuan Yu, Cheng-Chieh Hsieh, Hung-Yi Kuo, Hao-Yi Tsai, Ming-Hung Tseng
  • Publication number: 20210082888
    Abstract: A package includes a first package and a second package over and bonded to the first package. The first package includes a first device die, and a first encapsulant encapsulating the first device die therein. The second package includes an Independent Passive Device (IPD) die, and a second encapsulant encapsulating the IPD die therein. The package further includes a power module over and bonded to the second package.
    Type: Application
    Filed: September 17, 2019
    Publication date: March 18, 2021
    Inventors: Yu-Chia Lai, Cheng-Chieh Hsieh, Tin-Hao Kuo, Hao-Yi Tsai, Chung-Shi Liu, Chen-Hua Yu
  • Publication number: 20210057387
    Abstract: A first package is bonded to a first substrate with first external connections and second external connections. The second external connections are formed using materials that are different than the first external connections in order to provide a thermal pathway from the first package. In a particular embodiment the first external connections are solder balls and the second external connections are copper blocks.
    Type: Application
    Filed: October 19, 2020
    Publication date: February 25, 2021
    Inventors: Chen-Hua Yu, Shin-Puu Jeng, Der-Chyang Yeh, Hsien-Wei Chen, Cheng-Chieh Hsieh, Ming-Yen Chiu
  • Patent number: 10930605
    Abstract: A device and method of manufacture is provided that utilize a dummy pad feature adjacent contact pads. The contact pads may be contact pads in an integrated fan-out package in which a molding compound is placed along sidewalls of a die and the contact pads extend over the die and the molding compound. The contact pads are electrically coupled to the die using one or more redistribution layers. The dummy pad features are electrically isolated from the contact pads. In some embodiments, the dummy pad features partially encircle the contact pads and are located in a corner region of the molding compound, a corner region of the die, and/or an interface region between an edge of the die and the molding compound.
    Type: Grant
    Filed: October 15, 2019
    Date of Patent: February 23, 2021
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chang-Chia Huang, Tsung-Shu Lin, Cheng-Chieh Hsieh, Wei-Cheng Wu
  • Patent number: 10910321
    Abstract: A semiconductor device includes an interposer disposed on a substrate. A first major surface of the interposer faces the substrate. A system on a chip is disposed on a second major surface of the interposer. The second major surface of the interposer opposes the first major surface of the interposer. A plurality of first passive devices is disposed in the first major surface of the interposer. A plurality of second passive devices is disposed on the second major surface of the interposer. The second passive devices are different devices than the first passive devices.
    Type: Grant
    Filed: November 26, 2018
    Date of Patent: February 2, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Cheng-Chieh Hsieh, Hau Tao, Yung-Tien Kuo
  • Patent number: 10879342
    Abstract: A multi-terminal inductor and method for forming the multi-terminal inductor are provided. In some embodiments, an interconnect structure is arranged over a semiconductor substrate. A passivation layer is arranged over the interconnect structure. A first magnetic layer is arranged over the passivation layer, and a conductive wire laterally extends from a first input/output (I/O) bond structure at a first location to a second I/O bond structure at a second location. A third I/O bond structure branches off of the conductive wire at a third location between the first location and the second location. A connection between the third I/O bond structure and the first I/O bond structure has a first inductance. Alternatively, a connection between the first I/O bond structure and the second I/O bond structure has a second inductance different than the first inductance.
    Type: Grant
    Filed: May 21, 2020
    Date of Patent: December 29, 2020
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Ching-Chung Hsu, Chung-Long Chang, Tsung-Yu Yang, Hung-Chi Li, Cheng-Chieh Hsieh, Che-Yung Lin, Grace Chang
  • Patent number: 10811389
    Abstract: A first package is bonded to a first substrate with first external connections and second external connections. The second external connections are formed using materials that are different than the first external connections in order to provide a thermal pathway from the first package. In a particular embodiment the first external connections are solder balls and the second external connections are copper blocks.
    Type: Grant
    Filed: December 21, 2018
    Date of Patent: October 20, 2020
    Assignee: Taiwan Semiconductor Manufacturing Company
    Inventors: Chen-Hua Yu, Shin-Puu Jeng, Der-Chyang Yeh, Hsien-Wei Chen, Cheng-Chieh Hsieh, Ming-Yen Chiu
  • Publication number: 20200312774
    Abstract: A packaged semiconductor device including a first die attached to a redistribution structure, a second die attached to the first die, and a molding compound surrounding the first die and the second die and a method of forming the same are disclosed. In an embodiment, a method includes forming first conductive pillars over and electrically coupled to a first redistribution structure; attaching a first die to the first redistribution structure, the first die including second conductive pillars; attaching a second die to the first die adjacent the second conductive pillars; encapsulating the first conductive pillars, the first die, and the second die with an encapsulant; forming a second redistribution structure over the encapsulant, the first conductive pillars, the first die, and the second die; and bonding a third die to the first redistribution structure.
    Type: Application
    Filed: February 6, 2020
    Publication date: October 1, 2020
    Inventors: Chen-Hua Yu, Hung-Yi Kuo, Chung-Shi Liu, Hao-Yi Tsai, Cheng-Chieh Hsieh, Tsung-Yuan Yu
  • Publication number: 20200286981
    Abstract: A multi-terminal inductor and method for forming the multi-terminal inductor are provided. In some embodiments, an interconnect structure is arranged over a semiconductor substrate. A passivation layer is arranged over the interconnect structure. A first magnetic layer is arranged over the passivation layer, and a conductive wire laterally extends from a first input/output (I/O) bond structure at a first location to a second I/O bond structure at a second location. A third I/O bond structure branches off of the conductive wire at a third location between the first location and the second location. A connection between the third I/O bond structure and the first I/O bond structure has a first inductance. Alternatively, a connection between the first I/O bond structure and the second I/O bond structure has a second inductance different than the first inductance.
    Type: Application
    Filed: May 21, 2020
    Publication date: September 10, 2020
    Inventors: Ching-Chung Hsu, Chung-Long Chang, Tsung-Yu Yang, Hung-Chi Li, Cheng-Chieh Hsieh, Che-Yung Lin, Grace Chang
  • Publication number: 20200251397
    Abstract: A three dimensional integrated circuit (3D-IC) module socket system includes an integrated Fan-Out (InFO) adapter having one or more integrated passive devices (IPDs) embedded in the InFO adapter. The InFO adapter is also integrated into the 3D-IC module socket system by stacking the InFO adapter between a socket and a SoW package. The InFO adapter with embedded IPDs allows for more planar area of the SoW package to be available for interfacing the socket and provides a short distance between the embedded IPDs and computing dies of the SoW package which enhances a power distribution network (PDN) performance and improves current handling of the 3D-IC module socket system.
    Type: Application
    Filed: September 3, 2019
    Publication date: August 6, 2020
    Inventors: Yu-Chia Lai, Cheng-Chieh Hsieh, Tin-Hao Kuo, Hao-Yi Tsai, Chung-Shi Liu, Chen-Hua Yu
  • Patent number: 10672860
    Abstract: A multi-terminal inductor and method for forming the multi-terminal inductor are provided. In some embodiments, an interconnect structure is arranged over a semiconductor substrate. A passivation layer is arranged over the interconnect structure. A first magnetic layer is arranged over the passivation layer, and a conductive wire laterally extends from a first input/output (I/O) bond structure at a first location to a second I/O bond structure at a second location. A third I/O bond structure branches off of the conductive wire at a third location between the first location and the second location. A connection between the third I/O bond structure and the first I/O bond structure has a first inductance. Alternatively, a connection between the first I/O bond structure and the second I/O bond structure has a second inductance different than the first inductance.
    Type: Grant
    Filed: September 30, 2019
    Date of Patent: June 2, 2020
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Ching-Chung Hsu, Chung-Long Chang, Tsung-Yu Yang, Hung-Chi Li, Cheng-Chieh Hsieh, Che-Yung Lin, Grace Chang
  • Publication number: 20200066831
    Abstract: A multi-terminal inductor and method for forming the multi-terminal inductor are provided. In some embodiments, an interconnect structure is arranged over a semiconductor substrate. A passivation layer is arranged over the interconnect structure. A first magnetic layer is arranged over the passivation layer, and a conductive wire laterally extends from a first input/output (I/O) bond structure at a first location to a second I/O bond structure at a second location. A third I/O bond structure branches off of the conductive wire at a third location between the first location and the second location. A connection between the third I/O bond structure and the first I/O bond structure has a first inductance. Alternatively, a connection between the first I/O bond structure and the second I/O bond structure has a second inductance different than the first inductance.
    Type: Application
    Filed: September 30, 2019
    Publication date: February 27, 2020
    Inventors: Ching-Chung Hsu, Chung-Long Chang, Tsung-Yu Yang, Hung-Chi Li, Cheng-Chieh Hsieh, Che-Yung Lin, Grace Chang
  • Publication number: 20200051936
    Abstract: A device and method of manufacture is provided that utilize a dummy pad feature adjacent contact pads. The contact pads may be contact pads in an integrated fan-out package in which a molding compound is placed along sidewalls of a die and the contact pads extend over the die and the molding compound. The contact pads are electrically coupled to the die using one or more redistribution layers. The dummy pad features are electrically isolated from the contact pads. In some embodiments, the dummy pad features partially encircle the contact pads and are located in a corner region of the molding compound, a corner region of the die, and/or an interface region between an edge of the die and the molding compound.
    Type: Application
    Filed: October 15, 2019
    Publication date: February 13, 2020
    Inventors: Chang-Chia Huang, Tsung-Shu Lin, Cheng-Chieh Hsieh, Wei-Cheng Wu
  • Patent number: 10510912
    Abstract: A system and method for blocking heat from reaching an image sensor in a three dimensional stack with a semiconductor device. In an embodiment a heat sink is formed in a back end of line process either on the semiconductor device or else on the image sensor itself when the image sensor is in a backside illuminated configuration. The heat sink may be a grid in either a single layer or in two layers, a zig-zag pattern, or in an interleaved fingers configuration.
    Type: Grant
    Filed: December 17, 2018
    Date of Patent: December 17, 2019
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Kuo-Chin Huang, Tzu-Jui Wang, Szu-Ying Chen, Dun-Nian Yaung, Jen-Cheng Liu, Bruce C. S. Chou, Jung-Kuo Tu, Cheng-Chieh Hsieh
  • Patent number: 10475877
    Abstract: A multi-terminal inductor and method for forming the multi-terminal inductor are provided. In some embodiments, an interconnect structure is arranged over a semiconductor substrate. A passivation layer is arranged over the interconnect structure. A first magnetic layer is arranged over the passivation layer, and a conductive wire laterally extends from a first input/output (I/O) bond structure at a first location to a second I/O bond structure at a second location. A third I/O bond structure branches off of the conductive wire at a third location between the first location and the second location. A connection between the third I/O bond structure and the first I/O bond structure has a first inductance. Alternatively, a connection between the first I/O bond structure and the second I/O bond structure has a second inductance different than the first inductance.
    Type: Grant
    Filed: August 21, 2018
    Date of Patent: November 12, 2019
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Ching-Chung Hsu, Chung-Long Chang, Tsung-Yu Yang, Hung-Chi Li, Cheng-Chieh Hsieh, Che-Yung Lin, Grace Chang
  • Patent number: 10453813
    Abstract: A device and method of manufacture is provided that utilize a dummy pad feature adjacent contact pads. The contact pads may be contact pads in an integrated fan-out package in which a molding compound is placed along sidewalls of a die and the contact pads extend over the die and the molding compound. The contact pads are electrically coupled to the die using one or more redistribution layers. The dummy pad features are electrically isolated from the contact pads. In some embodiments, the dummy pad features partially encircle the contact pads and are located in a corner region of the molding compound, a corner region of the die, and/or an interface region between an edge of the die and the molding compound.
    Type: Grant
    Filed: June 26, 2017
    Date of Patent: October 22, 2019
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chang-Chia Huang, Tsung-Shu Lin, Cheng-Chieh Hsieh, Wei-Cheng Wu
  • Publication number: 20190252294
    Abstract: Cooling devices, packaged semiconductor devices, and methods of packaging semiconductor devices are disclosed. In some embodiments, a cooling device for a semiconductor device includes a reservoir having a first plate and a second plate coupled to the first plate. A cavity is between the first plate and the second plate. A phase change material (PCM) is in the cavity. The cooling device is adapted to dissipate heat from a packaged semiconductor device.
    Type: Application
    Filed: April 22, 2019
    Publication date: August 15, 2019
    Applicants: Taiwan Semiconductor Manufacturing Company, Ltd., Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Cheng-Chieh Hsieh, Chi-Hsi Wu, Shin-Puu Jeng, Tsung-Yu Chen, Wensen Hung
  • Publication number: 20190164905
    Abstract: A semiconductor device includes an interposer disposed on a substrate. A first major surface of the interposer faces the substrate. A system on a chip is disposed on a second major surface of the interposer. The second major surface of the interposer opposes the first major surface of the interposer. A plurality of first passive devices is disposed in the first major surface of the interposer. A plurality of second passive devices is disposed on the second major surface of the interposer. The second passive devices are different devices than the first passive devices.
    Type: Application
    Filed: November 26, 2018
    Publication date: May 30, 2019
    Inventors: Cheng-Chieh HSIEH, Hau TAO, Yung-Tien KUO
  • Patent number: 10290604
    Abstract: Integrated circuit packages and methods of forming the same are provided. One or more redistribution layers are formed on a carrier. First connectors are formed on a first side of the RDLs. Dies are bonded to the first side of the RDLs using the first connectors. An encapsulant is formed on the first side of the RDLs around the dies. The carrier is de-bonded from the overlaying structure and second connectors are formed on a second side of the RDLs. The resulting structure in diced to form individual packages.
    Type: Grant
    Filed: December 11, 2017
    Date of Patent: May 14, 2019
    Assignee: Taiwan Semiconductor Manufacturing Company
    Inventors: Lin-Chih Huang, Hung-An Teng, Hsin-Yu Chen, Tsang-Jiuh Wu, Cheng-Chieh Hsieh
  • Publication number: 20190140112
    Abstract: A system and method for blocking heat from reaching an image sensor in a three dimensional stack with a semiconductor device. In an embodiment a heat sink is formed in a back end of line process either on the semiconductor device or else on the image sensor itself when the image sensor is in a backside illuminated configuration. The heat sink may be a grid in either a single layer or in two layers, a zig-zag pattern, or in an interleaved fingers configuration.
    Type: Application
    Filed: December 17, 2018
    Publication date: May 9, 2019
    Inventors: Kuo-Chin Huang, Tzu-Jui Wang, Szu-Ying Chen, Dun-Nian Yaung, Jen-Cheng Liu, Cheng San Chou, Jung-Kuo Tu, Cheng-Chieh Hsieh