Abstract: An input device and a handheld electronic device comprising the input device are provided. The input device comprises an elastic sheet and a switch sheet, both with alignment through-holes for precise alignment. Thereby, a protrusion of the elastic sheet is disposed precisely above a switch of the switch sheet. Because of the inerrable assembly of the input device, the handheld electronic device will have an acute response to the depression made by the user.

Abstract: A handheld electronic device including a first body, a second body, a flexible electrical connecting means and a cover is provided. The second body is slidely coupled to the first body. The flexible electrical connecting means is electrically connected between the first body and the second body and the cover is slidely coupled to the second body. The cover is located at a first position on the second body when the first body and the second body are in a stacked state. The cover shields the flexible electrical connecting means exposed due to the movement of the second body against the first body when the first body and the second body are in a spread state. Therefore, reliability and appearance of the handheld electronic device can be improved. In addition, available area on the handheld electronic device in the spread state can be increased, to provide higher design flexibility.

Abstract: A key structure of a portable electronic device is provided. The portable electronic device has a first operation mode and a second operation mode. The key structure comprises a key, a first light source, and a second light source. The first light source emits a first colored light in the first operation mode so that the key can display a first input symbol. The second light source emits a second colored light in the first operation mode so that the key can display a second input symbol. As a result, users who operate portable electronic devices with the aforementioned key structure can easily recognize the different kinds of input symbols corresponding to different input methods in different operation modes.

Abstract: The present invention discloses a method for forming a semiconductor device. The method includes providing a substrate; forming at least one first opening in the substrate to a predetermined depth and exposing a sidewall of the substrate in the first opening; forming a spacer on the sidewall and exposing a portion of the substrate in the bottom of the first opening; etching the exposed substrate in the bottom of the first opening by using the spacer as a mask to form a second opening; forming an isolation layer in the second opening and a portion of the first opening; forming a gate dielectric layer on the surface of the substrate; and forming a conductive layer covering the substrate.

Abstract: A handheld electronic device comprising a main body, a stylus and a non-contact sensor is provided. The main body has a containing slot, and the stylus having a sensing region is suitable for being inserted into the containing slot. The non-contact sensor is disposed beside the containing slot. The non-contact sensor outputs a sensing signal for identifying the position of the stylus when the stylus moves in the containing slot and the sensing region of the stylus passes the non-contact sensor. By detecting the position of the stylus in a non-contact manner, the reliability and the lifetime of the handheld electronic device are improved, and a higher sensing precision is also provided.

Abstract: A filtering circuit and a structure thereof are provided. The filtering circuit includes an input terminal, an output terminal, a resonant circuit, a first coupling portion, and a second coupling portion. The resonant circuit is coupled between the input terminal and the output terminal and includes M resonators which are arranged in sequence. A signal received by the input terminal can be transmitted to the output terminal by the resonant circuit through inter-coupling between adjacent resonators. The first coupling portion and the second coupling portion are respectively coupled to non-adjacent resonators. A part of the signal received by the input terminal is transmitted to the second coupling portion via the first coupling portion through cross-couple. Thereby, sideband interference can be further suppressed.

Abstract: A multi-level comparator with fixed power consumption is disclosed. By using the switch character of differential pair and parallelizing single side of common source amplifier with multi-level input, the power of the multi-level comparator can be fixed by the current bias. This result shows that the multi-level comparator is able to heighten input stages at fixed power. Therefore, the multi-level comparator has the functionalities of several different comparators while maintaining fixed power consumption.

Abstract: A method for fabricating the memory structure includes: providing a substrate having a pad, forming an opening in the pad, forming a first spacer on a sidewall of the opening, filling the opening with a sacrificial layer, removing the first spacer and exposing a portion of the substrate, removing the exposed substrate to define a first trench and a second trench, removing the sacrificial layer to expose a surface of the substrate to function as a channel region, forming a first dielectric layer on a surface of the first trench, a surface of the second trench and a surface of the channel region, filling the first trench and the second trench with a first conductive layer, forming a second dielectric layer on a surface of the first conductive layer and the surface of the channel region, filling the opening with a second conductive layer, and removing the pad.

Abstract: The invention provides a dynamic random access memory (DRAM) with an electrostatic discharge (ESD) region. The upper portion of the ESD plug is metal, and the lower portion of the ESD plug is polysilicon. This structure may improve the mechanical strength of the ESD region and enhance thermal conductivity from electrostatic discharging. In addition, the contact area between the ESD plugs and the substrate can be reduced without increasing aspect ratio of the ESD plugs. The described structure is completed by a low critical dimension controlled patterned photoresist, such that the processes and equipments are substantially maintained without changing by a wide margin.

Abstract: The present invention discloses a multi-bit stacked-type non-volatile memory having a spacer-shaped floating gate and a manufacturing method thereof. The manufacturing method includes forming a patterned dielectric layer containing arsenic on a semiconductor substrate, wherein the patterned dielectric layer defines an opening as an active area. A dielectric spacer is formed on a side wall of the patterned dielectric layer and a gate dielectric layer is formed on the semiconductor substrate. A source/drain region is formed by thermal driving method making arsenic diffusion from the patterned dielectric layer into the semiconductor substrate. A spacer-shaped floating gate is formed on the side wall of the dielectric spacer and the gate dielectric layer. An interlayer dielectric layer is formed on the spacer-shaped floating gate. A control gate is formed on the interlayer dielectric layer and fills the opening of the active area.

Abstract: In the present invention, users on the Internet can share and accumulate experiences by referencing to different uses' experience data.

Abstract: A method for forming a vertical coupling structure for non-adjacent resonators is provided to have a first and a second resonators, a dielectric material layer, a first and a second high-frequency transmission lines and at least one via pole. The first and the second resonators respectively have a first and a second opposite metal surfaces. The dielectric material layer is disposed between the opposite second metal surfaces of the first and the second resonators. The first and the second transmission lines are respectively arranged at sides of the first metal surfaces of the first resonator and the second resonator. The first high-frequency transmission line is vertically connected to the second high-frequency transmission line by the via pole.

Abstract: A vertical coupling structure for non-adjacent resonators is provided to have a first and a second resonators, a dielectric material layer, a first and a second high-frequency transmission lines and at least one via pole. The first and the second resonators respectively have a first and a second opposite metal surfaces. The dielectric material layer is disposed between the opposite second metal surfaces of the first and the second resonators. The first and the second transmission lines are respectively arranged at sides of the first metal surfaces of the first resonator and the second resonator. The first high-frequency transmission line is vertically connected to the second high-frequency transmission line by the via pole.

Abstract: A memory structure including a substrate, dielectric patterns, spacer patterns, a first dielectric layer, a conductor pattern, a second dielectric layer and doped regions is described. The dielectric patterns are disposed on the substrate. The spacer patterns are disposed on each sidewall of each of the dielectric patterns respectively. The first dielectric layer is disposed between the spacer patterns and the substrate. The conductor pattern is disposed on the substrate and covers the spacer patterns. The second dielectric layer is disposed between the spacer patterns and the conductor pattern. The doped regions are disposed in the substrate under each of the dielectric patterns respectively.

Abstract: A connector and an electronic apparatus and a combination comprising the connector for first and second joints are disclosed. The connector includes a base, a plurality of first pins, and a plurality of second pins. The base has a first and a second connecting surface. The first pins are disposed on the first connecting surface and the quantity of the first pins is the same as the pin quantity of the first joint. In addition, the second pins are disposed on the second connecting surface and the total quantity of the second pins and the first pins is the same as the pin quantity of the second joint. The base may include two convex parts and a concave part. The first connecting surface and the second connecting surface are disposed on surfaces of the two convex parts respectively. The concave part accommodates the two convex parts.

Abstract: A memory structure including a substrate, a first dielectric layer, a first conducting layer, a second conducting layer, a second dielectric layer, a spacer and a doped region is provided. The substrate has a trench wherein. The first dielectric layer is disposed on the interior surface of the trench. The first conducting layer is disposed on the first dielectric layer of the lower portion of the trench. The second conducting layer is disposed above the first conducting layer and filling the trench. The second dielectric layer is disposed between the first conducting layer and the second conducting layer. The spacer is disposed between the first dielectric layer and the second conducting layer. The doped region is disposed in the substrate of a side of the trench.

Abstract: A stylus for a portable apparatus is disclosed. The stylus is usable as a prop to support the portable apparatus to stand on a platform and comprises a main portion and a rotating portion. The main portion comprises a tip end and a pivot end, and at least one protruding rib is disposed on the pivot end. A positioning plate is disposed on one end of the rotating portion, and connects with the protruding rib. A bolt passes through the protruding rib and the positioning plate, so that the rotating portion could pivotably connect with the main portion. Furthermore, at least one positioning structure is formed on one end of the positioning plate. The cross-sectional shape of the positioning structure is an arc shape. The stylus further comprises an elastic component and a positioning ball. The elastic component presses the positioning ball in the positioning structure, so that the portable apparatus could stand on a table surface. In addition, at least one groove is disposed on the sidewalls of the stylus.

Abstract: An optical fiber is disclosed, which is comprised of: a core, having a plurality of microstructures formed thereon; and a cladding layer, surrounding the core. In a preferred embodiment, as light is transmitting along the axis of the aforesaid optical fiber and strikes on the plural microstructures, it is scattered and reflected out of the optical fiber through a side wall thereof so as to achieve a side-emitting effect. As the microstructures are formed inside the core of the aforesaid optical fiber, not only they are prevented from being damaged by normal usage, contacting to adhesive directly, but also they can lower the risk of the optical fiber being snapped/deformed while the optical fiber is subjecting to an external force and bended. In addition, by controlling the shape, quantity, size, distribution density and location of the microstructure, the brightness of the side-emitting optical fiber can be adjusted correspondingly.

Abstract: The present invention is to provide a light comprising a shade, one or more reflection members facing an inner surface of the shade, and one or more light-emitting members each provided at one end of each of the reflection members. The reflection members and the light-emitting members are concealed by the shade so as to protect the reflection members and the light-emitting members. Light emitted by the light-emitting members is transmitted through the shade after being deflected by the reflection members.

Abstract: A floating gate and fabrication method thereof. A semiconductor substrate is provided, on which an oxide layer, a first conducting layer, and a patterned hard mask layer having an opening are sequentially formed. A spacer is formed on the sidewall of the opening. A second conducting layer is formed on the hard mask layer. The second conducting layer is planarized to expose the surface of the patterned hard mask layer. The surface of the second conducting layer is oxidized to form an oxide layer. The patterned hard mask layer and the oxide layer and the first conducting layer underlying the patterned hard mask layer are removed.