Abstract: Methods of cutting fins, and structures formed thereby, are described. In an embodiment, a structure includes a first fin and a second fin on a substrate, and a fin cut-fill structure disposed between the first fin and the second fin. The first fin and the second fin are longitudinally aligned. The fin cut-fill structure includes a liner on a first sidewall of the first fin, and an insulating fill material on a sidewall of the liner and on a second sidewall of the first fin. The liner is further on a surface of the first fin between the first sidewall of the first fin and the second sidewall of the first fin.

Abstract: Methods of cutting fins, and structures formed thereby, are described. In an embodiment, a structure includes a first fin and a second fin on a substrate, and a fin cut-fill structure disposed between the first fin and the second fin. The first fin and the second fin are longitudinally aligned. The fin cut-fill structure includes a liner on a first sidewall of the first fin, and an insulating fill material on a sidewall of the liner and on a second sidewall of the first fin. The liner is further on a surface of the first fin between the first sidewall of the first fin and the second sidewall of the first fin.

Abstract: A method of forming a gas spacer in a semiconductor device and a semiconductor device including the same are disclosed. In accordance with an embodiment, a method includes forming a gate stack over a substrate; forming a first gate spacer on sidewalls of the gate stack; forming a second gate spacer on sidewalls of the first gate spacer; removing the second gate spacer using an etching process to form a first opening, the etching process being performed at a temperature less than 0° C., the etching process using an etching solution including hydrogen fluoride; and depositing a dielectric layer over the first gate spacer and the gate stack, the dielectric layer sealing a gas spacer in the first opening.

Abstract: A method of forming a semiconductor device includes: forming a fin protruding above a substrate, where a top portion of the fin comprises a layer stack that includes alternating layers of a first semiconductor material and a second semiconductor material; forming a dummy gate structure over the fin; forming openings in the fin on opposing sides of the dummy gate structure; forming source/drain regions in the openings; removing the dummy gate structure to expose the first semiconductor material and the second semiconductor material under the dummy gate structure; performing a first etching process to selectively remove the exposed first semiconductor material, where after the first etching process, the exposed second semiconductor material form nanostructures, where each of the nanostructures has a first shape; and after the first etching process, performing a second etching process to reshape each of the nanostructures into a second shape different from the first shape.

Abstract: A heat dissipation housing includes an outer casing and the heat conduction block. The heat dissipation housing includes a thickness portion and at least one first tenon extending towards the inner direction of the outer casing from the inner surface of the thickness portion. Heat conduction block includes a base and at least one second tenon extending towards the outer direction of the outer casing from the base. The first tenon and the second tenon are combined, such that the first tenon, the second tenon, and the base together form a column extending towards the inner direction of the outer casing from the inner surface of the thickness portion. The outer casing and the heat conduction block both have a thermal conductivity greater than 0.5 W/m-k.

Abstract: An IP Camera includes a heat-generating element, a lens holder, a lens assembly and a heat-conducting element. The lens assembly includes a lens, a front portion and a rear portion opposite to the front portion. The front portion surrounds the lens. The lens assembly is disposed on the lens holder with the rear portion. The heat-conducting element has a thermal conductivity greater than 5 W/mK. The heat-conducting element is in contact with the heat-generating element, and a portion of the heat-conducting element surrounds the front portion.

Abstract: A fingerprint identification and uniform light structure is applied to an electronic device which includes a display screen. The fingerprint identification and uniform light structure includes a backlight plate, a plurality of light emitting units, a semi-transparent reflective filter and a fingerprint photography module. The backlight plate is located under the display screen, and the backlight plate includes a hole. The plurality of light emitting units are located on one side of the backlight plate, and the side is toward the display screen. The semi-transparent reflective filter is located in the hole. The fingerprint photography module is located under the filter.

Abstract: A latching structure includes a first plate, a second plate and a sliding plate disposed on a surface of the first plate and movable in a first direction. The first plate includes first arches each having an alignment hole in the first direction. The second plate includes second arches each having a latching hole in the first direction. The sliding plate includes pins corresponding to the latching holes. When the alignment hole accommodates the second arch and the sliding plate is located at a latching position, the pin is located in a corresponding latching hole to block separation of the first plate from the second plate in a second direction. When the sliding plate is located at a retracted position, the pin separates from the corresponding latching hole to allow separation of the first plate from the second plate in the second direction.

Abstract: A latching structure includes a first plate, a second plate and a sliding plate disposed on a surface of the first plate and movable in a first direction. The first plate includes first arches each having an alignment hole in the first direction. The second plate includes second arches each having a latching hole in the first direction. The sliding plate includes pins corresponding to the latching holes. When the alignment hole accommodates the second arch and the sliding plate is located at a latching position, the pin is located in a corresponding latching hole to block separation of the first plate from the second plate in a second direction. When the sliding plate is located at a retracted position, the pin separates from the corresponding latching hole to allow separation of the first plate from the second plate in the second direction.

Abstract: Methods of cutting gate structures and fins, and structures formed thereby, are described. In an embodiment, a substrate includes first and second fins and an isolation region. The first and second fins extend longitudinally parallel, with the isolation region disposed therebetween. A gate structure includes a conformal gate dielectric over the first fin and a gate electrode over the conformal gate dielectric. A first insulating fill structure abuts the gate structure and extends vertically from a level of an upper surface of the gate structure to at least a surface of the isolation region. No portion of the conformal gate dielectric extends vertically between the first insulating fill structure and the gate electrode. A second insulating fill structure abuts the first insulating fill structure and an end sidewall of the second fin. The first insulating fill structure is disposed laterally between the gate structure and the second insulating fill structure.

Abstract: Methods of cutting fins, and structures formed thereby, are described. In an embodiment, a structure includes a first fin and a second fin on a substrate, and a fin cut-fill structure disposed between the first fin and the second fin. The first fin and the second fin are longitudinally aligned. The fin cut-fill structure includes a liner on a first sidewall of the first fin, and an insulating fill material on a sidewall of the liner and on a second sidewall of the first fin. The liner is further on a surface of the first fin between the first sidewall of the first fin and the second sidewall of the first fin.

Abstract: Methods of cutting gate structures and fins, and structures formed thereby, are described. In an embodiment, a substrate includes first and second fins and an isolation region. The first and second fins extend longitudinally parallel, with the isolation region disposed therebetween. A gate structure includes a conformal gate dielectric over the first fin and a gate electrode over the conformal gate dielectric. A first insulating fill structure abuts the gate structure and extends vertically from a level of an upper surface of the gate structure to at least a surface of the isolation region. No portion of the conformal gate dielectric extends vertically between the first insulating fill structure and the gate electrode. A second insulating fill structure abuts the first insulating fill structure and an end sidewall of the second fin. The first insulating fill structure is disposed laterally between the gate structure and the second insulating fill structure.

Abstract: Methods of cutting gate structures and fins, and structures formed thereby, are described. In an embodiment, a substrate includes first and second fins and an isolation region. The first and second fins extend longitudinally parallel, with the isolation region disposed therebetween. A gate structure includes a conformal gate dielectric over the first fin and a gate electrode over the conformal gate dielectric. A first insulating fill structure abuts the gate structure and extends vertically from a level of an upper surface of the gate structure to at least a surface of the isolation region. No portion of the conformal gate dielectric extends vertically between the first insulating fill structure and the gate electrode. A second insulating fill structure abuts the first insulating fill structure and an end sidewall of the second fin. The first insulating fill structure is disposed laterally between the gate structure and the second insulating fill structure.

Abstract: An IP Camera includes a heat-generating element, a lens holder, a lens assembly and a heat-conducting element. The lens assembly includes a lens, a front portion and a rear portion opposite to the front portion. The front portion surrounds the lens. The lens assembly is disposed on the lens holder with the rear portion. The heat-conducting element has a thermal conductivity greater than 5 W/mK. The heat-conducting element is in contact with the heat-generating element, and a portion of the heat-conducting element surrounds the front portion.

Abstract: A shielding clip and an electronic device are provided. The electronic device includes a circuit board, an electronic element, a shielding cover and the shielding clip. The shielding clip comprises a bottom plate parallel to the circuit board. The bottom plate has a first side region and a second side region. The first side region has a first pin extending into the circuit board and a first buckle plate extending away from the circuit board to buckle the shielding cover. The second side region has a second pin extending into the circuit board and a second buckle plate extending away from the circuit board to buckle the shielding cover.

Abstract: An imaging lens module includes a plurality of lens elements, wherein one of the lens elements is a plastic lens element. At least one surface of an object-side surface and an image-side surface of the plastic lens element includes an effective optical portion, a first fitting portion and a connecting portion. The effective optical portion is aspheric. The first fitting portion surrounds the effective optical portion and is connected to another one of the lens elements adjacent to the surface for aligning the plastic lens element with the lens element adjacent to the surface. The connecting portion connects the effective optical portion and the first fitting portion, and includes a coating area and an isolation area. The coating area is coated with a light absorbing coating. The isolation area connects the coating area and the first fitting portion.

Abstract: A flowerpot assembly is provided a support including a plurality of equally spaced openings from top to bottom; and a plurality of flowerpots each disposed on the opening and including a container and a conduit wherein the container includes a storing section for anchoring a plant and a water distribution device on a bottom of the storing section, the water distribution device including a coupling, a wall, an inlet, and an overflow exit; wherein a bottom of the conduit is connected to the water distribution device; wherein the inlet communicates the conduit with the storing section; wherein the wall is around the coupling; and wherein the overflow exit is between the water distribution device and the wall and extends out of the container.