Abstract: A semiconductor structure includes a substrate, a bit line, a dielectric layer and a word line. The substrate has an active area and a trench. The bit line is on the substrate and extends along a direction. The active area includes a first portion and a second portion respectively located at two opposite sides of the bit line and spaced apart from each other along the direction. A landing area extends from the first portion of the active area to the second portion of the active area across the bit line. A dielectric layer is in the trench. The active area is surrounded by the dielectric layer. The word line is surrounded by the dielectric layer. The word line is curved and below the bit line. A portion of the word line is between first and second end portions of the landing area.

Abstract: A method of fabricating the semiconductor device includes forming a bit line structure over a substrate, forming a spacer structure on a sidewall of the bit line structure, partially removing an upper portion of the spacer structure to form a slope on the spacer structure slanting to the bit line structure, forming a landing pad material to cover the spacer structure and contact the slope, and removing at least a portion of the landing pad material to form a landing pad against the slope.

Abstract: Technologies relating to a system and method of real-time video overlaying and sharing from multiple cameras are disclosed. An example method of real-time video overlaying and sharing includes the steps of: capturing video output from a first camera on a mobile device, recognizing a portion of an individual in the captured video output and determining a user body contour, generating a binary mask, enabling real-time video processing, including the separate user body contour from a background of the video from the first camera, smoothing one or more edges of the binary mask, merging the binary mask with the video from the first camera, and creating a composite video, merged from the first camera video output onto a second camera video output. The second camera can be included on the same mobile device as the first camera, facing in the opposite direction, or on a second mobile device.

Abstract: The disclosure provides a handheld input device and an electronic system. The handheld input device includes a pen-shaped body, a flexible displacement sensor, and a processor. The flexible displacement sensor is disposed on the pen-shaped body, wherein the flexible displacement sensor deforms in response to a pressing force applied onto the flexible displacement sensor. The processor is coupled to the flexible pressure sensor and disposed in the pen-shaped body, wherein the processor is configured to perform: obtaining a specific displacement of the flexible displacement sensor; determining a stroke size of a representative object in a virtual environment based on the specific displacement of the flexible displacement sensor, wherein the representative object corresponds to the handheld device.

Abstract: A semiconductor structure includes a substrate, a bit line, a dielectric layer and a word line. The substrate has an active area and a trench. The bit line is on the substrate and extends along a direction. The active area includes a first portion and a second portion respectively located at two opposite sides of the bit line and spaced apart from each other along the direction. A landing area extends from the first portion of the active area to the second portion of the active area across the bit line. A dielectric layer is in the trench. The active area is surrounded by the dielectric layer. The word line is surrounded by the dielectric layer. The word line is curved and below the bit line. A portion of the word line is between first and second end portions of the landing area.

Abstract: An optical imaging lens includes a first lens element to a seventh lens element. The first lens element, the fifth lens element and the sixth lens element are made of plastic. The optical axis region of the image-side surface of the second lens element is convex, the optical axis region of the image-side surface of the third lens element is convex, the optical axis region of the object-side surface of the fourth lens element is convex and the optical axis region of the image-side surface of the seventh lens element is concave to satisfy (T5+G56+T6)/(G23+T3+G34+T4+G45) ?1.200 by controlling the surface curvatures of each lens element to enlarge HFOV, to reduce the system length and to have good imaging quality.

Abstract: An optical-lens-set includes a first lens element of a concave image-side surface near its optical-axis, a sixth lens element of negative refractive power and of a concave image-side surface near its optical-axis to go with a fifth lens element of a concave object-side surface near its optical-axis or with a seventh lens element of negative refractive power. The Abbe number ?1 of the first lens element, the Abbe number ?3 of the third lens element, the Abbe number ?4 of the fourth lens element, the Abbe number ?5 of the fifth lens element, the Abbe number ?6 of the sixth lens element and the Abbe number ?7 of the seventh lens element together satisfy 5?5?1?(?3+?4+?5+?6+?7).

Abstract: Aspects described herein include devices, wireless communication apparatuses, methods, and associated operations for heatsinks integrating millimeter wave and non-millimeter wave operation. In some aspects, an apparatus comprising a millimeter wave (mmW) module is provided. The apparatus includes at least one mmW antenna and at least one mmW signal node configured to communicate a data signal in association with the at least one mmW antenna. The apparatus further includes mixing circuitry configured to convert between the data signal and a mmW signal for communications associated with the at least one mmW antenna. The apparatus further includes a heatsink comprising a non-mmW antenna and a non-mmW feed point coupled to the non-mmW antenna. The non-mmW feed point is configured to provide a signal path to the non-mmW antenna for a non-mmW signal. The heatsink is mechanically coupled to the mmW module.

Abstract: A display device includes a display, an image beam shifter, and a light guiding component. The display generates an image beam. The image beam shifter receives the image beam and generates a projected image beam. The light guiding component receives the projected image beam to transport the projected image beam to different positions of a target zone in sequence. The image beam shifter projects the projected image beam to different positions of the light guiding component with time division.

Abstract: The present disclosure provides a method for preparing a semiconductor device structure with fine boron nitride spacer patterns. The method includes undercutting a photoresist pattern over a semiconductor substrate, and forming an inner spacer element over a sidewall surface of the photoresist pattern. The inner spacer element has a portion extending into a recess (i.e., the undercut region) of the photoresist pattern to form a footing, and a width of the portion of the inner spacer element increases continuously as the portion extends toward the semiconductor substrate. As a result, the inner spacer element may be prevented from collapsing after removal of the photoresist pattern.

Abstract: An electroluminescent device, wherein the electroluminescent device includes a first-conductivity-type semiconductor layer, a second-conductivity-type semiconductor layer, an active layer, a first electrode, a second electrode, and an optical conversion material. The active layer is disposed between the first-conductivity-type semiconductor layer and the second-conductivity-type semiconductor layer and electrically connected with these two. The first-conductivity-type semiconductor layer has a light-emitting surface disposed on a side opposite to the active layer, and includes a plurality of 3D structures arranged regularly, extending from the light-emitting surface towards the active layer to jointly define at least one cavity having a depth greater than 70% a thickness of the first-conductivity-type semiconductor layer. The optical conversion material is filled in the cavity.

Abstract: An optical imaging lens includes a first, a second, a third, a fourth, a fifth, and a sixth lens elements from an object side to an image side arranged in order along an optical axis. The six lens elements are the only lens elements having refracting power in the optical imaging lens. An optical axis region of an object-side surface of the third lens element is concave. A periphery region of an image-side surface of the fourth lens element is concave. An optical axis region of an image-side surface of the sixth lens element is concave.

Abstract: Technologies relating to system and method of real-time video overlaying or superimposing display from multiple mutually synchronous cameras are disclosed. An example method of real-time video overlaying includes the steps of: synchronizing frame rates of a depth data, a face metadata, and a video data of a first camera video output captured by a first camera; determining a first depth between a user face and the first camera; using a cutoff depth to determine a user body contour; generating a binary mask of the user body contour based on the first depth and the cutoff depth; smoothing an edge of the binary mask; merging the binary mask with the first camera video output and generating a merged first camera video output; and overlaying the merged first camera video output onto a second camera video output.

Abstract: An optical-lens-set includes a first lens element of a concave image-side surface near its optical-axis, a sixth lens element of negative refractive power and of a concave image-side surface near its optical-axis to go with a fifth lens element of a concave object-side surface near its optical-axis or with a seventh lens element of negative refractive power. The Abbe number ?1 of the first lens element, the Abbe number ?3 of the third lens element, the Abbe number ?4 of the fourth lens element, the Abbe number ?5 of the fifth lens element, the Abbe number ?6 of the sixth lens element and the Abbe number ?7 of the seventh lens element together satisfy 5?5?1?(?3+?4+?5+?6+?7).

Abstract: A semiconductor structure includes a substrate, an isolation layer, a dielectric layer, an insulation layer, a conductor and a capping layer. The substrate has a concave portion. The isolation layer is located on a top surface of the substrate. The dielectric layer is located on the isolation layer. The insulation layer is located on a surface of the concave portion and extends to a sidewall of the isolation layer. The conductor is located on the insulation layer in the concave portion. The conductor has a first top surface and a second top surface, and the first top surface is closer to the dielectric layer than the second top surface. The capping layer is located in the concave portion and covers the conductor.

Abstract: A head mounted display device includes a display, a light waveguide element, and a light shutter. The display periodically provides a display image. The light waveguide element receives the display image, generates a projection image according to the display image, projects the projection image from a second surface, and projects the projection image to a target zone from a first surface. The light shutter is adjacent to the second surface of the light waveguide element and is coupled to the light waveguide element. The light shutter is periodically disabled and enabled in an alternating manner.

Abstract: A method of manufacturing an optical component having micro-structures is described. The method detects a crystallization temperature within a crystallization temperature interval for fully filling the molding material into a mold cavity to rapidly produce the optical element having a micro-structure with a large area.

Abstract: A surface acoustic wave device includes a piezoelectric substrate, a supportive layer, a cover layer and a pillar bump. The supportive layer is disposed on the piezoelectric substrate and around a transducer, the cover layer covers the supportive layer, and the pillar bump is located in a lower via hole of the supportive layer and an upper via hole of the cover layer. The upper via hole has a lateral opening located on a lateral surface of the cover layer, and the pillar bump in the cover layer protrudes from the lateral surface of the cover layer via the lateral opening.

Abstract: An optical imaging lens includes a first lens element to a seventh lens element. The first lens element, the fifth lens element and the sixth lens element are made of plastic. The optical axis region of the image-side surface of the second lens element is convex, the optical axis region of the image-side surface of the third lens element is convex, the optical axis region of the object-side surface of the fourth lens element is convex and the optical axis region of the image-side surface of the seventh lens element is concave to satisfy (T5+G56+T6)/(G23+T3+G34+T4+G45)?1.200 by controlling the surface curvatures of each lens element to enlarge HFOV, to reduce the system length and to have good imaging quality.

Abstract: The copolymerization of ethylene with an optional comonomer is conducted in the presence of a catalyst having a specific aryloxy ether ligand structure. The process enables very high conversions of ethylene to polyethylene at very short residence times when conducted under conditions of pressures of at least 10.3 MPa and high ethylene feed concentrations of from 70 to 150 grams per liter. Using these polymerization conditions, the level of unsaturation may be controlled by the polymerization temperature: for example, a level of 0.09 vinyl groups per 1000 carbon atoms was observed at a polymerization temperature of 160° C. and a level of 0.22 vinyls per 1000 carbon atoms was observed at 220° C.