Abstract: A method for fabricating fin-shaped field-effect transistor (FinFET) is disclosed. The method includes the steps of: providing a substrate; forming a fin-shaped structure in the substrate; forming a shallow trench isolation (STI) on the substrate and around the bottom portion of the fin-shaped structure; forming a first gate structure on the STI and the fin-shaped structure; and removing a portion of the STI for exposing the sidewalls of the STI underneath the first gate structure.

Abstract: A semiconductor process includes the following steps. A substrate is provided. At least a fin-shaped structure is formed on the substrate and a gate structure partially overlapping the fin-shaped structure is formed. Subsequently, a dielectric layer is blanketly formed on the substrate, and a part of the dielectric layer is removed to form a first spacer on the fin-shaped structure and a second spacer besides the fin-shaped structure. Furthermore, the second spacer and a part of the fin-shaped structure are removed to form at least a recess at a side of the gate structure, and an epitaxial layer is formed in the recess.

Abstract: A semiconductor device includes a fin structure, an isolation structure, a gate structure and an epitaxial structure. The fin structure protrudes from the surface of the substrate and includes a top surface and two sidewalls. The isolation structure surrounds the fin structure. The gate structure overlays the top surface and the two sidewalls of a portion of the fin structure, and covers a portion of the isolation structure. The isolation structure under the gate structure has a first top surface and the isolation structure at two sides of the gate structure has a second top surface, wherein the first top surface is higher than the second top surface. The epitaxial layer is disposed at one side of the gate structure and is in direct contact with the fin structure.

Abstract: An epitaxial process includes the following steps. A first gate and a second gate are formed on a substrate. Two first spacers are formed on the substrate beside the first gate and the second gate respectively. Two first epitaxial layers having first profiles are formed in the substrate beside the two first spacers respectively. A second spacer material is formed to cover the first gate and the second gate. The second spacer material covering the second gate is etched to form a second spacer on the substrate beside the second gate and expose the first epitaxial layer beside the second spacer while reserving the second spacer material covering the first gate. The exposed first epitaxial layer in the substrate beside the second spacer is replaced by a second epitaxial layer having a second profile different from the first profile.

Abstract: A semiconductor device with oxygen-containing metal gates includes a substrate, a gate dielectric layer and a multi-layered stack structure. The multi-layered stack structure is disposed on the substrate. At least one layer of the multi-layered stack structure includes a work function metal layer. The concentration of oxygen in the side of one layer of the multi-layered stack structure closer to the gate dielectric layer is less than that in the side of one layer of the multi-layered stack structure opposite to the gate dielectric layer.

Abstract: A replacement gate process is disclosed. A substrate and a dummy gate structure formed on the substrate is provided, wherein the dummy gate structure comprises a dummy layer on the substrate, a hard mask layer on the dummy layer, spacers at two sides of the dummy layer and the hard mask layer, and a contact etch stop layer (CESL) covering the substrate, the spacers and the hard mask layer. The spacers and the CESL are made of the same material. Then, a top portion of the CESL is removed to expose the hard mask layer. Next, the hard mask layer is removed. Afterward, the dummy layer is removed to form a trench.

Abstract: A field-effect transistor comprises a substrate, a gate dielectric layer, a barrier layer, a metal gate electrode and a source/drain structure. The gate dielectric layer is disposed on the substrate. The barrier layer having a titanium-rich surface is disposed on the gate dielectric layer. The metal gate electrode is disposed on the titanium-diffused surface. The source/drain structure is formed in the substrate and adjacent to the metal gate electrode.

Abstract: The present invention provides a method of manufacturing semiconductor device having metal gates. First, a substrate is provided. A first conductive type transistor having a first sacrifice gate and a second conductive type transistor having a second sacrifice gate are disposed on the substrate. The first sacrifice gate is removed to form a first trench. Then, a first metal layer is formed in the first trench. The second sacrifice gate is removed to form a second trench. Next, a second metal layer is formed in the first trench and the second trench. Lastly, a third metal layer is formed on the second metal layer wherein the third metal layer is filled into the first trench and the second trench.

Abstract: A method of manufacturing a semiconductor device having metal gate includes providing a substrate having at least a dummy gate, a sacrificial layer covering sidewalls of the dummy gate and a dielectric layer exposing a top of the dummy gate formed thereon, forming a sacrificial layer covering sidewalls of the dummy gate on the substrate, forming a dielectric layer exposing a top of the dummy gate on the substrate, performing a first etching process to remove a portion of the sacrificial layer surrounding the top of the dummy gate to form at least a first recess, and performing a second etching process to remove the dummy gate to form a second recess. The first recess and the second recess construct a T-shaped gate trench.

Abstract: A method of manufacturing a semiconductor device having metal gate includes providing a substrate having at least a dummy gate, a sacrificial layer covering sidewalls of the dummy gate and a dielectric layer exposing a top of the dummy gate formed thereon, forming a sacrificial layer covering sidewalls of the dummy gate on the substrate, forming a dielectric layer exposing a top of the dummy gate on the substrate, performing a first etching process to remove a portion of the sacrificial layer surrounding the top of the dummy gate to form at least a first recess, and performing a second etching process to remove the dummy gate to form a second recess. The first recess and the second recess construct a T-shaped gate trench.

Abstract: A method of manufacturing a semiconductor device having metal gate includes providing a substrate having at least a dummy gate, a sacrificial layer covering sidewalls of the dummy gate and a dielectric layer exposing a top of the dummy gate formed thereon, forming a sacrificial layer covering sidewalls of the dummy gate on the substrate, forming a dielectric layer exposing a top of the dummy gate on the substrate, performing a first etching process to remove a portion of the sacrificial layer surrounding the top of the dummy gate to form at least a first recess, and performing a second etching process to remove the dummy gate to form a second recess. The first recess and the second recess construct a T-shaped gate trench.

Abstract: A method of forming metal gate structure includes providing a substrate; forming a gate dielectric layer, a material layer and a polysilicon layer stacked on the substrate; forming a first mask layer, a second mask layer and a patterned photoresist on the polysilicon layer; removing portions of the second mask layer and the first mask layer to form a hard mask by utilizing the patterned photoresist as an etching mask; removing the patterned photoresist, and next utilizing the hard mask as an etching mask to remove parts of the polysilicon layer and parts of the material layer. Thus, a gate stack is formed. Since the patterned photoresist is removed before forming the gate stack, the gate stack is protected from damages of the photoresist-removing process. The photoresist-removing process does not attack the sidewalls of the gate stack, so a bird's beak effect of the gate dielectric layer is prevent.

Abstract: A method of selectively removing a patterned hard mask is described. A substrate with a patterned target layer thereon is provided, wherein the patterned target layer includes a first target pattern and at least one second target pattern, and the patterned hard mask includes a first mask pattern on the first target pattern and a second mask pattern on the at least one second target pattern. A first photoresist layer is formed covering the first mask pattern. The sidewall of the at least one second target pattern is covered by a second photoresist layer. The second mask pattern is removed using the first photoresist layer and the second photoresist layer as a mask.

Abstract: A method of forming metal gate structure includes providing a substrate; forming a gate dielectric layer, a material layer and a polysilicon layer stacked on the substrate; forming a first mask layer, a second mask layer and a patterned photoresist on the polysilicon layer; removing portions of the second mask layer and the first mask layer to form a hard mask by utilizing the patterned photoresist as an etching mask; removing the patterned photoresist, and next utilizing the hard mask as an etching mask to remove parts of the polysilicon layer and parts of the material layer. Thus, a gate stack is formed. Since the patterned photoresist is removed before forming the gate stack, the gate stack is protected from damages of the photoresist-removing process. The photoresist-removing process does not attack the sidewalls of the gate stack, so a bird's beak effect of the gate dielectric layer is prevent.

Abstract: A method of manufacturing a metal gate is provided. The method includes providing a substrate. Then, a gate dielectric layer is formed on the substrate. A multi-layered stack structure having a work function metal layer is formed on the gate dielectric layer. An O2 ambience treatment is performed on at least one layer of the multi-layered stack structure. A conductive layer is formed on the multi-layered stack structure.

Abstract: The present invention provides a method of manufacturing semiconductor device having metal gates. First, a substrate is provided. A first conductive type transistor having a first sacrifice gate and a second conductive type transistor having a second sacrifice gate are disposed on the substrate. The first sacrifice gate is removed to form a first trench. Then, a first metal layer is formed in the first trench. The second sacrifice gate is removed to form a second trench. Next, a second metal layer is formed in the first trench and the second trench. Lastly, a third metal layer is formed on the second metal layer wherein the third metal layer is filled into the first trench and the second trench.

Abstract: A method of forming metal gate transistor includes providing a substrate; forming a gate dielectric layer, a work function metal layer and a polysilicon layer stacked on the substrate; forming a hard mask and a patterned photoresist on the polysilicon layer; removing the patterned photoresist, and next utilizing the hard mask as an etching mask to remove parts of the polysilicon layer and parts of the work function metal layer. Thus, a gate stack is formed. Since the patterned photoresist is removed before forming the gate stack, the gate stack is protected from damages of the photoresist-removing process. The photoresist-removing process does not attack the sidewalls of the gate stack, so a bird's beak effect of the gate dielectric layer is prevent.

Abstract: A method for removing a photoresist is disclosed. First, a substrate including a patterned photoresist is provided. Second, an ion implantation is carried out on the substrate. Then, a non-oxidative pre-treatment is carried out on the substrate. The non-oxidative pre-treatment provides hydrogen, a carrier gas and plasma. Later, a photoresist-stripping step is carried out so that the photoresist can be completely removed.

Abstract: A removing method of a hard mask includes the following steps. A substrate is provided. At least two MOSFETs are formed on the substrate. An isolating structure is formed in the substrate and located between the at least two MOSFETs. Each of the MOSEFTs includes a gate insulating layer, a gate, a spacer and a hard mask on the gate. A protecting structure is formed on the isolating structure and the hard mask is exposed from the protecting structure. The exposed hard mask is removed to expose the gate.

Abstract: A method of manufacturing a semiconductor device having metal gate includes providing a substrate having at least a dummy gate, a sacrificial layer covering sidewalls of the dummy gate and a dielectric layer exposing a top of the dummy gate formed thereon, forming a sacrificial layer covering sidewalls of the dummy gate on the substrate, forming a dielectric layer exposing a top of the dummy gate on the substrate, performing a first etching process to remove a portion of the sacrificial layer surrounding the top of the dummy gate to form at least a first recess, and performing a second etching process to remove the dummy gate to form a second recess. The first recess and the second recess construct a T-shaped gate trench.