Abstract: An organic-inorganic hybrid transistor comprises a flexible substrate, a gate electrode, an organic gate dielectric layer, an oxide semiconductor layer, a first passivation layer, a source electrode and a drain electrode. The gate electrode is disposed on the flexible substrate. The organic gate dielectric layer covers the gate electrode and a portion of the flexible substrate. The oxide semiconductor layer is disposed over the organic gate dielectric layer. The first passivation layer is interposed between and in contact with the oxide semiconductor layer and the organic gate dielectric layer. The source electrode and the drain electrode are respectively connected to different sides of the oxide semiconductor layer.

Abstract: A vertical transistor and a manufacturing method thereof are provided herein. The manufacturing method includes forming a first patterned conductive layer on a substrate; forming a patterned metal oxide layer on the first patterned conductive layer, in which the patterned metal oxide layer includes a first patterned insulator layer, a second patterned insulator layer, and a second patterned conductive layer; forming a semiconductor layer; and forming a third patterned conductive layer. The first patterned insulator layer, the second patterned insulator layer, and the second patterned conductive layer are made by using a single metal oxide material. The oxygen concentration of the second patterned conductive layer is different from the oxygen concentrations of the first patterned insulator layer and the second patterned insulator layer.

Abstract: An organic light-emitting display device includes an active array substrate, an encapsulating layer, an organic light-emitting layer, an absorption layer and a sealant. The encapsulating layer is opposite to the active array substrate, and the encapsulating layer has an inner surface facing the active array substrate. The organic light-emitting layer is disposed on the active array substrate. The absorption layer is configured to absorb at least one of moisture and oxygen, and is positioned on the inner surface of the encapsulating layer.

Abstract: A thin film transistor is provided. In this thin film transistor, the thickness of the gate is increased. Therefore, the source and drain of this thin film transistor can be disposed on the side wall of the gate to decrease the occupied area of the thin film transistor. An array substrate and a display device using the thin film transistor are also provided.

Abstract: The present invention discloses a method for manufacturing home and personal care product and a method for manufacturing degreased coffee particles thereof. The home and personal care product comprises coffee particles with different sizes, in which the coffee particles are degreased by physical and chemical methods and then grinded to different sizes to meet the requirements of different products. Natural compositions from original coffee can be further added for enhancing the clean and care effects of the product.

Abstract: A manufacturing method of a display panel including following steps is provided. An active device substrate including a first plate, active devices disposed on the first plate and pixel electrodes electrically connected to the active devices is provided. A display medium substrate including a second plate and a display medium disposed on the second plate is provided. The pixel electrodes are electrically connected to the display medium by a conductor. Moreover, a display panel manufactured by the manufacturing method is also provided.

Abstract: A reflective display device includes a drive array substrate, an electrophoretic display film, a reflective optical film and a light source module. The electrophoretic display film is disposed on the drive array substrate and includes a plurality of display mediums. The reflective optical film is disposed on the electrophoretic display film. The light source module is disposed beside the reflective optical film. A light emitting from the light source module is reflected to the electrophoretic display film by the reflective optical film. The light source module includes a plurality of first-color light sources, a plurality of second-color light sources and a plurality of third-color light sources which are switched on in sequence. The reflective display device is in a color display mode when the light source module is turned on. The reflective display device is in a monochrome display mode when the light source module is turned off.

Abstract: A thin film transistor structure is provided. The thin film transistor structure includes a first transistor having a first active layer, a second transistor having a second active layer, a first protection layer contacting the first active layer, and a second protection layer contacting the second active layer. The oxygen contents of the first and the second protection layers are controlled to affect the oxygen vacancy number of the first and the second active layers to satisfy the various electronic requirements of the first and the second transistors.

Abstract: A thin film transistor (TFT) structure includes a metal oxide semiconductor layer, a gate, a source, a drain, a gate insulation layer, and a passivation layer. The metal oxide semiconductor layer has a crystalline surface which is constituted by a plurality of grains separated from one another. An indium content of the grains accounts for at least 50% of all metal elements of the metal oxide semiconductor layer. The gate is disposed on one side of the metal oxide semiconductor layer. The source and the drain are disposed on the other side of the metal oxide semiconductor layer. The gate insulation layer is disposed between the gate and the metal oxide semiconductor layer. The passivation layer is disposed on the gate insulation layer, and the crystalline surface of the metal oxide semiconductor layer is in direct contact with the gate insulation layer or the passivation layer.

Abstract: A display device is provided, which includes a transparent substrate, an active device array, a solar cell structure and an electrophoretic display film. The transparent substrate has an upper surface and a lower surface opposite to each other. The active device array has a plurality of pixel structures, in which the pixel structures are disposed on the upper surface of the transparent substrate. The solar cell structure is directly disposed on the lower surface of the transparent substrate. The electrophoretic display film is disposed over the transparent substrate and includes a transparent protection film, an electrode layer and a plurality of display media, in which the electrode layer is disposed between the transparent protection film and the display media and the display media are located between the electrode layer and the active device array.

Abstract: A thin film transistor structure including a substrate, a gate, an oxide semiconductor layer, a gate insulation layer, a source, a drain, a silicon-containing light absorption layer and an insulation layer is provided. The gate insulation layer is disposed between the oxide semiconductor layer and the gate. The oxide semiconductor layer and the gate are stacked in a thickness direction. The source and the drain contact the oxide semiconductor layer. A portion of the oxide semiconductor layer without contacting the source and the drain defines a channel region located between the source and the drain. The oxide semiconductor layer is located between the substrate and the silicon-containing light absorption layer. The silicon-containing light absorption layer has a band gap smaller than 2.5 eV. The insulation layer is disposed between the oxide semiconductor layer and the silicon-containing light absorption layer, and in contact with the silicon-containing light absorption layer.

Abstract: A thin film transistor (TFT) structure includes a metal oxide semiconductor layer, a gate, a source, a drain, a gate insulation layer, and a passivation layer. The metal oxide semiconductor layer has a crystalline surface which is constituted by a plurality of grains separated from one another. An indium content of the grains accounts for at least 50% of all metal elements of the metal oxide semiconductor layer. The gate is disposed on one side of the metal oxide semiconductor layer. The source and the drain are disposed on the other side of the metal oxide semiconductor layer. The gate insulation layer is disposed between the gate and the metal oxide semiconductor layer. The passivation layer is disposed on the gate insulation layer, and the crystalline surface of the metal oxide semiconductor layer is in direct contact with the gate insulation layer or the passivation layer.

Abstract: A thin film transistor structure is provided. The thin film transistor structure includes a first transistor having a first active layer, a second transistor having a second active layer, a first protection layer contacting the first active layer, and a second protection layer contacting the second active layer. The oxygen contents of the first and the second protection layers are controlled to affect the oxygen vacancy number of the first and the second active layers to satisfy the various electronic requirements of the first and the second transistors.

Abstract: A thin film transistor is provided. In this thin film transistor, the thickness of the gate is increased. Therefore, the source and drain of this thin film transistor can be disposed on the side wall of the gate to decrease the occupied area of the thin film transistor. An array substrate and a display device using the thin film transistor are also provided.

Abstract: A display device is provided, which includes a transparent substrate, an active device array, a solar cell structure and an electrophoretic display film. The transparent substrate has an upper surface and a lower surface opposite to each other. The active device array has a plurality of pixel structures, in which the pixel structures are disposed on the upper surface of the transparent substrate. The solar cell structure is directly disposed on the lower surface of the transparent substrate. The electrophoretic display film is disposed over the transparent substrate and includes a transparent protection film, an electrode layer and a plurality of display media, in which the electrode layer is disposed between the transparent protection film and the display media and the display media are located between the electrode layer and the active device array.