Abstract: A method includes forming a first electrode, and depositing a dielectric layer over the first electrode. The dielectric layer has a first dielectric constant and a first thickness. A dielectric capping layer is deposited over the dielectric layer. The dielectric capping layer has a second dielectric constant higher than the first dielectric constant, and a second thickness smaller than the first thickness. The method further includes forming a second electrode over the dielectric capping layer, forming a first contact plug electrically connecting to the first electrode, and forming a second contact plug electrically connecting to the second electrode.

Abstract: A method includes forming a first electrode, performing a first treatment process on a first oxide layer over the first electrode, wherein the first treatment process is performed using a first process gas comprising ammonia, depositing a high-k dielectric layer over the first oxide layer, forming a second electrode over the high-k dielectric layer, forming a first contact plug electrically connecting to the first electrode, and forming a second contact plug electrically connecting to the second electrode.

Abstract: A method for using an extreme ultraviolet radiation source is provided. The method includes performing a lithography process using an extreme ultraviolet (EUV) radiation source; after the lithography processes, inserting an extraction tube into a vessel of the EUV radiation source; and cleaning a collector of the EUV radiation source by using the extraction tube.

Abstract: An electronic paper display device includes a frame, a flexible substrate, a front panel, and a chip. The flexible substrate includes a first area, a second area, a bending area adjoining the first area and the second area, and a conductive glue disposing area. The first area and the conductive glue disposing area are located on the top surface of the frame. The flexible substrate has an L-shaped groove. When the bending area is bent through the L-shaped groove, the second area extends to the bottom surface of the frame. The front panel is located on the first area of the flexible substrate and has a conductive glue located in a non-display area. The conductive glue is located on the conductive glue disposing area of the flexible substrate. The chip is connected to the second area of the flexible substrate.

Abstract: A stabilization method incorporated with a mobile robot having a body, a plane-pressure sensor, and a movement mechanism is disclosed and includes the following steps: sensing and obtaining a pressure distribution of the body through the plane-pressure sensor; computing a center of gravity (CoG) position of the body in accordance with the pressure distribution; determining whether the CoG position is located within a steady zone pre-defined upon the body; and, providing a reverse force toward a CoG offset direction of the CoG position when the CoG position is determined to be off the steady zone.

Abstract: A method includes depositing a first high-k dielectric layer over a first semiconductor region, performing a first annealing process on the first high-k dielectric layer, depositing a second high-k dielectric layer over the first high-k dielectric layer; and performing a second annealing process on the first high-k dielectric layer and the second high-k dielectric layer.

Abstract: A method to form an inductor, the method comprising: forming a metal structure by removing unwanted portions of the metal plate to form a first electrode, a second electrode, and a bare conductor wire between the first electrode and the second electrode, wherein a first thickness of the first electrode is greater than a thickness of the bare conductor wire, and a second thickness of the second electrode is greater than said thickness of the bare conductor wire; and forming a magnetic body to encapsulate the bare conductor wire, and a least one portion of the first electrode and a least one portion of the second electrode.

Abstract: Dipole engineering techniques are disclosed that incorporate dipole dopant and/or nitrogen into gate dielectrics (e.g., high-k dielectric layers thereof) to realize multi-threshold voltage transistor tuning of transistors. The dipole engineering techniques include (1) forming a dipole dopant source layer over gate dielectrics of some transistors, but not other transistors, (2) forming a mask over gate dielectrics of some transistors, but not other transistors, (3) performing a nitrogen-containing thermal drive-in process, and (4) removing the dipole dopant source layer and the mask after the nitrogen-containing thermal drive-in process. The nitrogen-containing thermal drive-in process diffuses nitrogen and dipole dopant (n-dipole dopant and/or p-dipole dopant) into unmasked gate dielectrics having the dipole dopant source layer formed thereon, nitrogen into unmasked gate dielectrics, and dipole dopant into masked gate dielectrics having the dipole dopant source layer formed thereon.

Abstract: A device includes a semiconductor substrate, a fin structure on the semiconductor substrate, a gate structure on the fin structure, and a pair of source/drain features on both sides of the gate structure. The gate structure includes an interfacial layer on the fin structure, a gate dielectric layer on the interfacial layer, and a gate electrode layer of a conductive material on and directly contacting the gate dielectric layer. The gate dielectric layer includes nitrogen element.

Abstract: A wound capacitor package structure and a sealing element thereof are provided. The wound capacitor package structure includes a wound assembly, a conductive assembly, a package casing and a sealing element. The conductive assembly includes a first conductive pin and a second conductive pin. The package casing is configured to receive the wound assembly. The sealing element is disposed inside the package casing and cooperating with the package casing, and the sealing element is configured to prevent the wound assembly from contacting an external environment. The package casing has a surrounding concave position-limiting portion recessed inward to press the sealing element, and a surrounding convex end portion protruding from the surrounding concave position-limiting portion to abut against the sealing element. The sealing element includes an elastomeric seal structure pressed by the surrounding concave position-limiting portion, and an oleophobic structure for protecting the elastomeric seal structure.

Abstract: In a method of inspecting an extreme ultraviolet (EUV) radiation source, during an idle mode, a borescope mounted on a fixture is inserted through a first opening into a chamber of the EUV radiation source. The borescope includes a connection cable attached at a first end to a camera. The fixture includes an extendible section mounted from a first side on a lead screw, and the camera of the borescope is mounted on a second side, opposite to the first side, of the extendible section. The extendible section is extended to move the camera inside the chamber of the EUV radiation source. One or more images are acquired by the camera from inside the chamber of the EUV radiation source at one or more viewing positions. The one or more acquired images are analyzed to determine an amount of tin debris deposited inside the chamber of the EUV radiation source.

Abstract: A pixel sensor array of an image sensor device described herein may include a deep trench isolation (DTI) structure that includes a plurality of DTI portions that extend into a substrate of the image sensor device. Two or more subsets of the plurality of DTI portions may extend around photodiodes of a pixel sensor of the pixel sensor array, and may extend into the substrate to different depths. The different depths enable the photocurrents generated by the photodiodes to be binned and used to generate unified photocurrent. In particular, the different depths enable photons to intermix in the photodiodes, which enables quadradic phase detection (QPD) binning for increased PDAF performance. The increased PDAF performance may include increased autofocus speed, increased high dynamic range, increased quantum efficiency (QE), and/or increased full well conversion (FWC), among other examples.

Abstract: The present disclosure is directed to a modularized vessel droplet generator assembly (MGDVA) including a droplet generator assembly (DGA). Under a normal operation, the liquid fuel moves along an operation pathway extending through the DGA to eject or discharge the liquid fuel (e.g., liquid tin) from a nozzle of the DGA into a vacuum chamber. The liquid fuel in the vacuum chamber is then exposed to a laser generating an extreme ultra-violet (EUV) light. Under a service operation, the operation pathway is closed and a service pathway extending through the DGA is opened. A gas is introduced into the service pathway forming a gas-liquid interface between the gas and the liquid fuel. The gas-liquid interface is driven to an isolation valve directly adjacent to the DGA. In other words, the gas pushes back the liquid fuel to the isolation valve. Once the gas-liquid interface reaches the isolation valve, the isolation valve is closed isolating the DGA from the liquid fuel.

Abstract: A vehicle seat with enhanced ventilation, and construction techniques for the enhanced ventilation, are described herein. An example vehicle seat includes an exterior formed of an air permeable mesh and a molded foam below the exterior. The molded foam has first holes which allow air to pass therethrough. The vehicle seat further includes a rigid duct connected to the molded foam, with the rigid duct having second holes which line up with the first holes. The vehicle seat further includes a fan, with the fan drawing air from an ambient source through the exterior and into the rigid duct.

Abstract: Dipole engineering techniques are disclosed that incorporate dipole dopant and/or nitrogen into gate dielectrics (e.g., high-k dielectric layers thereof) to realize multi-threshold voltage transistor tuning of transistors. The dipole engineering techniques include (1) forming a dipole dopant source layer over gate dielectrics of some transistors, but not other transistors, (2) forming a mask over gate dielectrics of some transistors, but not other transistors, (3) performing a nitrogen-containing thermal drive-in process, and (4) removing the dipole dopant source layer and the mask after the nitrogen-containing thermal drive-in process. The nitrogen-containing thermal drive-in process diffuses nitrogen and dipole dopant (n-dipole dopant and/or p-dipole dopant) into unmasked gate dielectrics having the dipole dopant source layer formed thereon, nitrogen into unmasked gate dielectrics, and dipole dopant into masked gate dielectrics having the dipole dopant source layer formed thereon.

Abstract: A method includes depositing a first high-k dielectric layer over a first semiconductor region, performing a first annealing process on the first high-k dielectric layer, depositing a second high-k dielectric layer over the first high-k dielectric layer; and performing a second annealing process on the first high-k dielectric layer and the second high-k dielectric layer.

Abstract: A method of making a semiconductor image sensor includes forming a photodiode in a substrate. The method further includes forming a recess in the substrate. The method further includes depositing a sacrificial material in the recess. The method further includes forming an interconnect structure over the sacrificial material. The method further includes etching a plurality of trenches in the interconnect structure. The method further includes removing the sacrificial material by passing an etchant through the plurality of trenches.

Abstract: A method and a system for creating a television menu with multiple settings are provided. A television control circuit is used in a television device. The television control circuit performs the method. A memory is provided for storing multiple television menu settings with respect to multiple clients' demands. When the television device is activated, the television control circuit performs a menu-loading sequence that loads one of the television menu settings from the memory. The television control circuit parses the television menu setting and obtains control tags and corresponding setting parameters. The television menu is initiated and displayed on the television device based on the control tags and the setting parameters.

Abstract: A method includes providing first and second channel layers in NMOS and PMOS regions respectively of a substrate; depositing a first layer comprising hafnium oxide over the first and second channel layers; forming a first dipole pattern over the second channel layer and not over the first channel layer; driving a first metal from the first dipole pattern into the first layer by annealing; removing the first dipole pattern; depositing a second layer comprising hafnium oxide over the first layer and over the first and second channel layers; forming a second dipole pattern over the second layer and the first channel layer and not over the second channel layer; driving a second metal from the second dipole pattern into the second layer by annealing; removing the second dipole pattern; and depositing a third layer comprising hafnium oxide over the second layer and over the first and the second channel layers.

Abstract: A hot box device and an operating method thereof are provided. The hot box device includes a first shell, a reformer, a burner, and a cathode inlet pipe. The first shell has a first cavity. The reformer is disposed in the first cavity. The burner is disposed in the reformer and has an opening. The cathode inlet pipe is disposed in the first cavity and extends through the first shell. The cathode inlet pipe is in fluid communication with the first cavity, and the opening of the burner is in fluid communication with the first cavity.