Abstract: A biological particle enrichment apparatus and a pico-droplet generator thereof are provided. The pico-droplet generator includes a container, a hollow needle connected to the container, a first piezoelectric member disposed on the container, and a second piezoelectric member disposed on the hollow needle. The container can receive a liquid specimen having biological particles. The hollow needle and the container are fluid communicated with each other, and an inner diameter of the container is within a range from 5 times to 30 times of an inner diameter of the hollow needle. The first piezoelectric member is annularly disposed on a surrounding lateral side of the container, and enables the biological particles in the container to move along a direction away from the surrounding lateral side by vibrating the container. The second piezoelectric member can squeeze the hollow needle, so that the liquid specimen flows outwardly to form a pico-droplet.

Abstract: A biological particle analysis method is provided and includes the following steps: fluorescence staining a liquid specimen through a fluorescence staining process so as to enable a target biological particle in the liquid specimen to becomes a fluorescence; accommodating the liquid specimen into a pico-droplet generator and using a camera device to take a real-time image of the liquid specimen; using the pico-droplet generator to output a target pico-droplet having the target biological particle onto a biochip according to the real-time image; removing the fluorescent color of the target biological particle in the target pico-droplet through a washing process; and fluorescence staining the target biological particle captured by the biochip at multiple times through the fluorescence staining process and the washing process, so as to obtain a plurality of fluorescence images respectively corresponding to multiple kinds of biological characterization expressions.

Abstract: A high voltage transistor may include a stepped dielectric layer between a field plate structure and a channel region of the high voltage transistor in a substrate. The stepped dielectric layer may increase the breakdown voltage of the high voltage transistor by reducing the electric field strength near the drain region of the high voltage transistor. In particular, a portion of the stepped dielectric layer near the drain region includes a thickness that is greater relative to a thickness of another portion of the stepped dielectric layer near the gate structure. The increased thickness near the drain region provides increased electric field suppression near the drain region (which operates at high voltages). In this way, the stepped dielectric layer enables the high voltage transistor described herein to achieve higher breakdown voltages without increasing the distance between the gate structure and the drain region of a high voltage transistor.

Abstract: An embodiment of an integrated circuit chip includes a combination processing core and magnetoresistive random access memory (MRAM) circuitry integrated into the chip. The MRAM circuitry includes a plurality of MRAM cells. The MRAM cells are organized into a number of memories, including a cache memory, a main or working memory and an optional secondary storage memory. The cache memory includes multiple cache levels.

Abstract: A thin film transistor includes an active layer located over a substrate, a first gate stack including a stack of a first gate dielectric and a first gate electrode and located on a first surface of the active layer, a pair of first contact electrodes contacting peripheral portions of the first surface of the active layer and laterally spaced from each other along a first horizontal direction by the first gate electrode, a second contact electrode contacting a second surface of the active layer that is vertically spaced from the first surface of the active layer, and a pair of second gate stacks including a respective stack of a second gate dielectric and a second gate electrode and located on a respective peripheral portion of a second surface of the active layer.

Abstract: A method includes locating a droplet disposed in a trap in a flow channel of a microfluidic device. The droplet is stabilized by a photo-responsive fluorosurfactant (e.g., based on plasmonic nanoparticles (NPs)). The method also includes illuminating the photo-responsive fluorosurfactant on the droplet to generate sufficient heat to cause bubble formation within the trap to release the droplet from the trap.

Abstract: A backlit-module-embedded illuminated keyswitch structure includes a baseplate, a mask film disposed below the baseplate and having a first coating configured to substantially reflect a light, a light guide sheet disposed at one side of the mask film and having a light source hole, a reflective layer disposed at one side of the light guide sheet opposite to the mask film and having an opening communicating with the light source hole, a top glue configured to connect the mask film and the light guide sheet around the light source hole, and a bottom glue configured to connect the light guide sheet and the reflective layer around the light source hole. The first coating covers the light source hole. In a stacked direction of the mask film, the light guide sheet, and the reflective layer, at least one of the top glue and the bottom glue overlaps the first coating.

Abstract: During operation, a computer system may provide instructions to access points in an indoor environment to measure relative distances between the access points. Then, the computer system may receive the measured relative distances. Moreover, the computer system may calculate geographic locations of the access points based at least in part on the measured relative distances. Next, the computer system may select potential anchor access points in the access points, and may provide, to an electronic device, information specifying the potential anchor access points. Furthermore, the computer system may receive, from the electronic device, second information specifying anchor access points in the potential access points and defined locations of the anchor access points. Additionally, the computer system may update the geographic locations based at least in part on the defined of the anchor access points, and may provide, to the access points, the updated geographic locations.

Abstract: An optical fiber module is provided and includes an optical fiber structure, a light-absorbing area and a photoelectric sensor in a housing. The optical fiber structure collectively arranges a plurality of first optical fibers to form at least one optical fiber bundle with a tapered end, and a second optical fiber is connected to the tapered end of the optical fiber bundle to converge the optical fiber bundle to the second optical fiber. The light-absorbing area corresponds to an end of the second optical fiber, such that the light-absorbing area absorbs scattering signals escaped and scattered when signals are transmitted from the plurality of first optical fibers to the second optical fiber. The photoelectric sensor is arranged corresponding to the plurality of first optical fibers to receive target signals escaped and refracted when the signals are transmitted from the second optical fiber to the plurality of first optical fibers.

Abstract: In a method of manufacturing a semiconductor device, a metallic photoresist layer is formed over a target layer to be patterned, the metallic photoresist layer is selectively exposed to actinic radiation to form a latent pattern, and the latent pattern is developed by applying a developer to the selectively exposed photoresist layer to form a pattern. The metallic photo resist layer is an alloy layer of two or more metal elements, and the selective exposure changes a phase of the alloy layer.

Abstract: A method includes forming a dummy pattern over test region of a substrate; forming an interlayer dielectric (ILD) layer laterally surrounding the dummy pattern; removing the dummy pattern to form an opening; forming a dielectric layer in the opening; performing a first testing process on the dielectric layer; performing an annealing process to the dielectric layer; and performing a second testing process on the annealed dielectric layer.

Abstract: A laser inspection system is provided. A laser source emits a laser with a first spectrum and the laser is transmitted by a first optical fiber. A gain optical fiber doped with special ions is connected to the first optical fiber, and a light detector is provided around the gain optical fiber. When the laser with the first spectrum passes through the gain optical fiber, the gain optical fiber absorbs part of the energy level of the laser with the first spectrum, so that the laser with the first spectrum is converted to generate light with a second spectrum based on the frequency conversion phenomenon. The light detector detects the intensity of the light with the second spectrum, so that the power of the laser source can be obtained.

Abstract: A keyswitch backlight structure includes a light-guiding layer, a reflective layer, and a transparent adhesive layer. The light-guiding layer has a bottom surface, a light-emitting surface opposite to the bottom surface, and a surface microstructure formed on the light-emitting surface. The reflective layer is disposed opposite to the bottom surface. The transparent adhesive layer is closely attached to and between the reflective layer and the light-guiding layer corresponding to the surface microstructure. An illuminated keyswitch structure includes base plate, a keycap, a supporting mechanism, and the above keyswitch backlight structure. The keyswitch backlight structure and the base plate are stacked. The supporting mechanism is connected to and between the base plate and the keycap for lifting the keycap relative to the base plate. Light entering the light-guiding layer exits the light-guiding layer through the light-emitting surface to illuminate a transparent indication area of the keycap.

Abstract: A Schottky diode includes a substrate, a first drift region in the substrate, a second drift region in the substrate, a first dielectric layer disposed over the substrate, a first doped region in the first drift region, a second doped region in the second drift region, a third doped region in the first drift region, and a metal field plate disposed over the first dielectric layer. The first drift region and the first doped region include a first conductivity type. The second drift region, the second doped region and third doped region include a second conductivity type complementary to the first conductivity type. The first dielectric layer overlaps a portion of the first drift region and a portion of the second drift region. The second doped region is separated from the first doped region.

Abstract: A display may have an array of pixels. Display driver circuitry may supply data and control signals to the pixels. Each pixel may have seven transistors, a capacitor, and a light-emitting diode such as an organic light-emitting diode. The seven transistors may receive control signals using horizontal control lines. Each pixel may have first and second emission enable transistors that are coupled in series with a drive transistor and the light-emitting diode of that pixel. The first and second emission enable transistors may be coupled to a common control line or may be separately controlled so that on-bias stress can be effectively applied to the drive transistor. The display driver circuitry may have gate driver circuits that provide different gate line signals to different rows of pixels within the display. Different rows may also have different gate driver strengths and different supplemental gate line loading structures.

Abstract: Provided is a semiconductor device includes a gate electrode, a gate dielectric layer, a channel layer, an insulating layer, a first source/drain electrode and a second source/drain electrode, a second dielectric layer, and a stop segment. The gate electrode is located within a first dielectric layer that overlies a substrate. The gate dielectric layer is located over the gate electrode. The channel layer is located on the gate dielectric layer. The insulating layer is located over the channel layer. The first source/drain electrode and the second source/drain electrode are located in the insulating layer, and connected to the channel layer. The second dielectric layer is beside one of the first source/drain electrode and the second source/drain electrode. The stop segment is embedded in the second dielectric layer.

Abstract: A backlight module configured to illuminate at least one key cap of a lighting keyboard. The backlight module comprises a lighting board, a light emitting unit and a light guide plate. The lighting board has a first reflective layer, a lighting circuit and two aligned micro-structure regions, all three at least partially being layered in parallel with each other. The two micro-structure regions reflect lights and are separated by the lighting circuit. The light emitting unit includes plural color dies connecting electrically with the lighting circuit. The light guide plate has a light guide hole for accommodating the light emitting unit. The color dies of the light emitting unit are aligned linearly, while the two micro-structure regions of the lighting board are aligned in perpendicular to the linearly-aligned color dies, with the micro-structure regions disposed at opposite sides the light emitting unit.

Abstract: A semiconductor device includes at least one fin, a first dielectric layer and a second dielectric layer. The first dielectric layer is disposed on the at least one fin. The second dielectric layer between the at least one fin and the first dielectric layer. A thickness of the first dielectric layer on a sidewall of the at least one fin is less than a thickness of the second dielectric layer on the sidewall of the at least one fin.

Abstract: A pneumatic rust-removing tool includes a main body having a chamber and an opening at a front end of the chamber, an impact block reciprocatingly moveable back and forth in the chamber, a spring disposed in the chamber, a mount disposed in the chamber and located between the impact block and the spring, rust-removing needles disposed with the mount and extending through the opening, and a slide sleeve disposed to the main body in a way that the slide sleeve is moveable back and forth relative to the main body. The slide sleeve is provided with a plurality of through holes, through which the rust-removing needles extend respectively. As a result, the pneumatic rust-removing tool can quickly adjust the exposed lengths of the rust-removing needles to adapt to different operational scenarios, thereby enhancing work efficiency and reducing the economic burden on the user.

Abstract: An interactive exercise apparatus for guiding a user to perform an exercise includes a display device and a detecting device. The display device is configured to display video imagery which shows an instructor image and at least one motion check image. The motion check image corresponds to a predetermined one of a plurality of body parts of the user, which has a motion guide track and a motion achievement evaluation. The detecting device is configured to detect displacement of the body parts. The motion guide track is displayed on a predetermined position of the video imagery with a predetermined track pattern, corresponding to a movement path of the predetermined body part when the user follows movements demonstrated by the instructor image to perform the exercise. The motion achievement evaluation indicates a matching degree determined according to the displacement of the predetermined body part detected by the detecting device.