Patents by Inventor Cheng-Hsien Wu

Cheng-Hsien Wu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240170343
    Abstract: A semiconductor device includes a first set of nanostructures stacked over a substrate in a vertical direction, and each of the first set of nanostructures includes a first end portion and a second end portion, and a first middle portion laterally between the first end portion and the second end portion. The first end portion and the second end portion are thicker than the first middle portion. The semiconductor device also includes a first plurality of semiconductor capping layers around the first middle portions of the first set of nanostructures, and a gate structure around the first plurality of semiconductor capping layers.
    Type: Application
    Filed: January 24, 2024
    Publication date: May 23, 2024
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Sai-Hooi YEONG, Bo-Feng YOUNG, Chi-On CHUI, Chih-Chieh YEH, Cheng-Hsien WU, Chih-Sheng CHANG, Tzu-Chiang CHEN, I-Sheng CHEN
  • Patent number: 11990182
    Abstract: An operation method for a memory device is provided. The memory device includes a two-terminal selector and a resistance variable storage element coupled to the two-terminal selector. The method includes providing a voltage pulse to the memory device. A voltage applied across the two-terminal selector during a falling part of the voltage pulse falls below a holding voltage of the two-terminal selector. A voltage falling rate of the falling part at which the voltage applied across the two-terminal selector reaches the holding voltage is raised for reducing threshold voltage drift of the two-terminal selector.
    Type: Grant
    Filed: January 18, 2022
    Date of Patent: May 21, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Hengyuan Lee, Cheng-Hsien Wu, Yu-Sheng Chen, Elia Ambrosi, Chien-Min Lee, Xinyu Bao
  • Patent number: 11984431
    Abstract: A structure and a method of forming are provided. The structure includes a first dielectric layer overlying a first substrate. A first connection pad is disposed in a top surface of the first dielectric layer and contacts a first redistribution line. A first dummy pad is disposed in the top surface of the first dielectric layer, the first dummy pad contacting the first redistribution line. A second dielectric layer overlies a second substrate. A second connection pad and a second dummy pad are disposed in the top surface of the second dielectric layer, the second connection pad bonded to the first connection pad, and the first dummy pad positioned in a manner that is offset from the second dummy pad so that the first dummy pad and the second dummy pad do not contact each other.
    Type: Grant
    Filed: January 19, 2023
    Date of Patent: May 14, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Kuo-Ming Wu, Yung-Lung Lin, Zhi-Yang Wang, Sheng-Chau Chen, Cheng-Hsien Chou
  • Patent number: 11978632
    Abstract: A semiconductor device includes a semiconductor substrate, an isolation structure, a gate structure, and a source/drain feature. The semiconductor substrate includes a semiconductor fin, wherein the semiconductor fin comprises a silicon germanium portion. The isolation structure is at a sidewall of a bottom portion of the silicon germanium portion. A top portion of the silicon germanium portion is higher than a top surface of the isolation structure, and an atomic concentration of germanium in the top portion of the silicon germanium portion is greater than an atomic concentration of germanium in the bottom portion of the silicon germanium portion. The gate structure is over a first portion of the silicon germanium portion of the semiconductor fin. The source/drain feature is over a second portion of the silicon germanium portion of the semiconductor fin.
    Type: Grant
    Filed: June 27, 2022
    Date of Patent: May 7, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventor: Cheng-Hsien Wu
  • Patent number: 11955173
    Abstract: First fire operations for an ovonic threshold switch (OTS) selector is provided. A first fire operation includes setting a peak amplitude of a voltage pulse, and performing at least one cycle, including: providing the voltage pulse to the OTS selector; sensing an output current passing through the OTS selector in response to the received voltage pulse; comparing a peak amplitude of the voltage pulse with a maximum peak amplitude ensuring initialization of the OTS selector; ending the first fire operation if the peak amplitude reaches the maximum peak amplitude; comparing the output current with a target current indicative of initialization of the OTS selector if the peak amplitude is lower than the maximum peak amplitude; ending the first fire operation if the output current reaches the target current; and setting another voltage pulse with a greater peak amplitude if the output current is lower than the target current.
    Type: Grant
    Filed: May 27, 2022
    Date of Patent: April 9, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Elia Ambrosi, Cheng-Hsien Wu, Hengyuan Lee, Chien-Min Lee, Xinyu Bao
  • Publication number: 20240105778
    Abstract: A semiconductor device includes a fin extending from a substrate. The fin has a source/drain region and a channel region. The channel region includes a first semiconductor layer and a second semiconductor layer disposed over the first semiconductor layer and vertically separated from the first semiconductor layer by a spacing area. A high-k dielectric layer at least partially wraps around the first semiconductor layer and the second semiconductor layer. A metal layer is formed along opposing sidewalls of the high-k dielectric layer. The metal layer includes a first material. The spacing area is free of the first material.
    Type: Application
    Filed: December 1, 2023
    Publication date: March 28, 2024
    Inventors: I-Sheng CHEN, Yee-Chia YEO, Chih Chieh YEH, Cheng-Hsien WU
  • Patent number: 11944019
    Abstract: A memory device includes a substrate, a transistor disposed over the substrate, an interconnect structure disposed over and electrically connected to the transistor, and a memory stack disposed between two adjacent metallization layers of the interconnect structure. The memory stack includes a bottom electrode disposed over the substrate and electrically connected to a bit line, a memory layer disposed over the bottom electrode, a selector layer disposed over the memory layer, and a top electrode disposed over the selector layer and electrically connected to a word line. Besides, at least one moisture-resistant layer is provided adjacent to and in physical contact with the selector layer, and the at least one moisture-resistant layer includes an amorphous material.
    Type: Grant
    Filed: August 27, 2021
    Date of Patent: March 26, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chen-Feng Hsu, Chien-Min Lee, Tung-Ying Lee, Cheng-Hsien Wu, Hengyuan Lee, Xinyu Bao
  • Publication number: 20240088182
    Abstract: In some embodiments, an image sensor is provided. The image sensor includes a photodetector disposed in a semiconductor substrate. A wave guide filter having a substantially planar upper surface is disposed over the photodetector. The wave guide filter includes a light filter disposed in a light filter grid structure. The light filter includes a first material that is translucent and has a first refractive index. The light filter grid structure includes a second material that is translucent and has a second refractive index less than the first refractive index.
    Type: Application
    Filed: November 21, 2023
    Publication date: March 14, 2024
    Inventors: Cheng Yu Huang, Chun-Hao Chuang, Chien-Hsien Tseng, Kazuaki Hashimoto, Keng-Yu Chou, Wei-Chieh Chiang, Wen-Chien Yu, Ting-Cheng Chang, Wen-Hau Wu, Chih-Kung Chang
  • Publication number: 20240079268
    Abstract: The present disclosure, in some embodiments, relates to a method of forming an integrated chip structure. The method may be performed by forming a plurality of interconnect layers within a first interconnect structure disposed over an upper surface of a first semiconductor substrate. An edge trimming process is performed to remove parts of the first interconnect structure and the first semiconductor substrate along a perimeter of the first semiconductor substrate. The edge trimming process results in the first semiconductor substrate having a recessed surface coupled to the upper surface by way of an interior sidewall disposed directly over the first semiconductor substrate. A dielectric capping structure is formed onto a sidewall of the first interconnect structure after performing the edge trimming process.
    Type: Application
    Filed: November 10, 2023
    Publication date: March 7, 2024
    Inventors: Chih-Hui Huang, Cheng-Hsien Chou, Cheng-Yuan Tsai, Kuo-Ming Wu, Sheng-Chan Li
  • Patent number: 11923252
    Abstract: A semiconductor device includes a first set of nanostructures stacked over a substrate in a vertical direction, and each of the first set of nanostructures includes a first end portion and a second end portion, and a first middle portion laterally between the first end portion and the second end portion. The first end portion and the second end portion are thicker than the first middle portion. The semiconductor device also includes a first plurality of semiconductor capping layers around the first middle portions of the first set of nanostructures, and a gate structure around the first plurality of semiconductor capping layers.
    Type: Grant
    Filed: January 27, 2021
    Date of Patent: March 5, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Sai-Hooi Yeong, Bo-Feng Young, Chi-On Chui, Chih-Chieh Yeh, Cheng-Hsien Wu, Chih-Sheng Chang, Tzu-Chiang Chen, I-Sheng Chen
  • Publication number: 20240071656
    Abstract: A circuit protection device includes a first temperature sensitive resistor, a second temperature sensitive resistor, an electrically insulating multilayer, a first and second electrode layer, and at least one external electrode. The first temperature sensitive resistor and the second temperature sensitive resistor are electrically connected in parallel, and have a first upper electrically conductive layer and a second lower electrically conductive layer, respectively. The electrically insulating multilayer includes an upper insulating layer, a middle insulating layer, and a lower insulating layer. The upper insulating layer is between the first upper electrically conductive layer and the first electrode layer. The middle layer is laminated between the first temperature sensitive resistor and the second temperature sensitive resistor. The lower insulating layer is between the second lower electrically conductive layer and the second electrode layer.
    Type: Application
    Filed: January 13, 2023
    Publication date: February 29, 2024
    Inventors: Chien Hui WU, Yung-Hsien CHANG, Cheng-Yu TUNG, Ming-Hsun LU, Yi-An SHA
  • Publication number: 20240060107
    Abstract: A method for in vitro transcription of a DNA template into RNA includes providing a mixture containing a buffer substance, ribonucleoside triphosphates (NTPs), one or more magnesium salts in a concentration of from about 2 mM to about 60 mM, the DNA template, and a recombinant RNA polymerase, and incubating the reaction mixture at from about 25° C. to about 40° C. for from about 1 hour to about 12 hours thereby producing the RNA. A method for in vitro transcription includes providing a DNA template and a cap analogue that binds to ?1 and/or +1 nucleotides of promoter for in vitro transcription, thus producing more full length mRNAs, allowing for more flexibility on the choice of first mRNA base, and providing +2 position open for custom sequence.
    Type: Application
    Filed: December 20, 2022
    Publication date: February 22, 2024
    Inventors: Cheng-Hsien WU, Fengmei PI, Robert DEMPCY, Shambhavi SHUBHAM, Kristine BIELECKI, Aaron BALL
  • Patent number: 11898186
    Abstract: A method for in vitro transcription of a DNA template into RNA includes providing a mixture containing a buffer substance, ribonucleoside triphosphates (NTPs), one or more magnesium salts in a concentration of from about 2 mM to about 60 mM, the DNA template, and a recombinant RNA polymerase, and incubating the reaction mixture at from about 25° C. to about 40° C. for from about 1 hour to about 12 hours thereby producing the RNA. A method for in vitro transcription includes providing a DNA template and a cap analogue that binds to ?1 and/or +1 nucleotides of promoter for in vitro transcription, thus producing more full length mRNAs, allowing for more flexibility on the choice of first mRNA base, and providing +2 position open for custom sequence.
    Type: Grant
    Filed: December 20, 2022
    Date of Patent: February 13, 2024
    Assignee: GENSCRIPT USA INC.
    Inventors: Cheng-Hsien Wu, Fengmei Pi, Robert Dempcy, Shambhavi Shubham, Kristine Bielecki, Aaron Ball
  • Patent number: 11894263
    Abstract: Semiconductor structures and methods are provided. A semiconductor structure according to the present disclosure includes a first metal line extending along a first direction, a second metal line lengthwise aligned with and spaced apart from the first metal line, and a third metal line extending along the first direction. The third metal line includes a branch extending along a second direction perpendicular to the first direction and the branch partially extends between the first metal line and the second metal line.
    Type: Grant
    Filed: October 7, 2021
    Date of Patent: February 6, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Cheng-Hsien Wu, Chung-Yi Lin, Yen-Sen Wang
  • Publication number: 20240040802
    Abstract: A memory device includes a substrate, a bottom electrode disposed over the substrate, a memory layer disposed over the bottom electrode, a selector layer disposed over the memory layer, and a top electrode disposed over the selector layer. The selector layer is an oxygen-doped chalcogenide based film, and an oxygen content of the selector layer is about 10 at % or less.
    Type: Application
    Filed: January 11, 2023
    Publication date: February 1, 2024
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Cheng-Hsien Wu, Chen-Feng Hsu, Chien-Min Lee, Tung-Ying Lee, Xinyu BAO, Elia Ambrosi, Hengyuan Lee
  • Publication number: 20240014294
    Abstract: A device includes a channel layer, a gate structure, a first gate spacer, and a second gate spacer. The gate structure wraps around the channel layer. The first gate spacer and the second gate spacer are on opposite sides of the gate structure. The first gate spacer has a first portion and a second portion between the gate structure and the first portion of the first gate spacer, and a dopant concentration of the second portion of the first gate spacer is greater than a dopant concentration of the first portion of the first gate spacer.
    Type: Application
    Filed: September 21, 2023
    Publication date: January 11, 2024
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventor: Cheng-Hsien WU
  • Publication number: 20240015988
    Abstract: A semiconductor device includes a semiconductor substrate and an interconnection structure. The interconnection structure is disposed over the semiconductor substrate. The interconnection structure includes first conductive lines, second conductive lines, and ovonic threshold switches. The first conductive lines extend parallel to each other in a first direction. The second conductive lines are stacked over the first conductive lines and extend parallel to each other in a second direction perpendicular to the first direction. The ovonic threshold switches are disposed between the first conductive lines and the second conductive lines. The ovonic threshold switches include a ternary GeCTe material. The ternary GeCTe material consists substantially of carbon, germanium, and tellurium. In the ternary GeCTe material, a content of carbon is in a range from 10 to 30 atomic percent and a content of germanium is in a range from 10 to 65 atomic percent.
    Type: Application
    Filed: September 22, 2023
    Publication date: January 11, 2024
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chien-Min Lee, Tung-Ying Lee, Cheng-Hsien Wu, Xinyu BAO, Hengyuan Lee, Ying-Yu Chen
  • Patent number: 11862732
    Abstract: Structures and formation methods of a semiconductor device structure are provided. The method includes providing a substrate having a first fin, and the first fin has a channel region and a source/drain region. The method includes forming a stack structure over the first fin, and the stack structure includes a first semiconductor layer and a second semiconductor layer vertically stacked over the fin. The method also includes removing a portion of the second semiconductor layer in the channel region, and a portion of the first semiconductor layer is remaining in the channel region. The method further includes forming a cladding layer over the remaining first semiconductor material layer in the channel region to form a nanostructure, wherein the nanostructure has a dumbbell shape. The method includes forming a gate structure surrounding the nanostructure.
    Type: Grant
    Filed: August 30, 2021
    Date of Patent: January 2, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Wilman Tsai, Cheng-Hsien Wu, I-Sheng Chen, Stefan Rusu
  • Publication number: 20230422518
    Abstract: A memory device is provided. The memory device includes memory cells. Each of the memory cells includes: a resistance variable storage device; and a selector. The selector is stacked with the resistance variable storage device and coupled to the resistance variable storage device with a shared terminal, and includes a switching layer formed of a chalcogenide compound. A thickness of the switching layer is equal to or less than about 5 nm.
    Type: Application
    Filed: January 9, 2023
    Publication date: December 28, 2023
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Elia Ambrosi, Xinyu BAO, Cheng-Hsien Wu
  • Patent number: 11855151
    Abstract: A semiconductor device includes a fin extending from a substrate. The fin has a source/drain region and a channel region. The channel region includes a first semiconductor layer and a second semiconductor layer disposed over the first semiconductor layer and vertically separated from the first semiconductor layer by a spacing area. A high-k dielectric layer at least partially wraps around the first semiconductor layer and the second semiconductor layer. A metal layer is formed along opposing sidewalls of the high-k dielectric layer. The metal layer includes a first material. The spacing area is free of the first material.
    Type: Grant
    Filed: June 21, 2021
    Date of Patent: December 26, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: I-Sheng Chen, Cheng-Hsien Wu, Chih Chieh Yeh, Yee-Chia Yeo