Abstract: An electronic device includes a substrate, a first transistor and a second transistor. The first transistor is disposed on the substrate and has a first terminal electrically connected to a first voltage level, a second terminal and a control terminal. The second transistor is disposed on the substrate and has a first terminal electrically connected to the second terminal of the first transistor, a second terminal electrically connected to a second voltage level, and a control terminal electrically connected to the control terminal of the first transistor. Wherein a voltage value of the first voltage level is greater than a voltage value of the second voltage level.

Abstract: The disclosure provides an electronic device. The electronic device includes a substrate, a transistor, and a variable capacitor. The transistor is disposed on the substrate. The variable capacitor is disposed on the substrate and adjacent to the transistor. A material of the transistor and a material of the variable capacitor both a include a III-V semiconductor material. The electronic device of an embodiment of the disclosure may simplify manufacturing process, reduce costs, or reduce dimensions.

Abstract: The disclosure provides an electronic device. The electronic device includes a substrate, a transistor, and a variable capacitor. The transistor is disposed on the substrate. The variable capacitor is disposed on the substrate and adjacent to the transistor. A material of the transistor and a material of the variable capacitor both a include a III-V semiconductor material. The electronic device of an embodiment of the disclosure may simplify manufacturing process, reduce costs, or reduce dimensions.

Abstract: An electronic device is provided. The electronic device includes a substrate, a material layer, a first metal layer, and a second metal layer. The material layer is disposed on the substrate, wherein a material of the material layer includes polysilicon, amorphous silicon, or indium gallium zinc oxide. The first metal layer is disposed on the material layer, wherein a first edge of the first metal layer includes a first curved portion. The second metal layer is disposed on the material layer, wherein a second edge of the second metal layer includes a second curved portion, and the second edge surrounds the first edge.

Abstract: The disclosure provides an electronic apparatus and a manufacturing method thereof. The electronic apparatus includes a first insulating layer, a first metal layer, a second metal layer, a PN junction assembly, and a transistor circuit. The first insulating layer includes a first surface and a second surface opposite to the first surface. The first metal layer is formed above the second surface. The second metal layer is formed on the second surface. The PN junction assembly is disposed on the first surface and electrically connected with the first metal layer and the second metal layer. The PN junction assembly includes a variable capacitor. The transistor circuit is electrically connecting with the second metal layer.

Abstract: A display device is provided. The display device includes a substrate, a channel layer, a first metal layer, and a second metal layer. The channel layer is disposed on the substrate and includes a first channel layer and a second channel layer. The first metal layer is disposed on the channel layer and includes a first gate and a second gate. The second metal layer is disposed over the first metal layer and includes a first source, a first drain, and a second source. The first gate, the first source, the first drain, and the first channel layer form a first transistor. The second gate, the second source, the first drain, and the second channel layer form a second transistor. The first transistor and the second transistor are connected in parallel.

Abstract: The disclosure provides an electronic apparatus. The electronic apparatus includes an insulator, a driving unit, an electronic unit, and a circuit unit. The driving unit is overlapped with the insulator. The electronic unit is overlapped with the insulator. The circuit unit is electrically connected to the driving unit. The driving unit receives a signal from the circuit unit and drives the electronic unit.

Abstract: The disclosure provides an electronic apparatus and a manufacturing method thereof. The electronic apparatus includes a first insulating layer, a first metal layer, a second metal layer, and an electronic assembly. The first insulating layer includes a first surface and a second surface opposite to the first surface. The first metal layer has an opening and is formed on the first surface. The second metal layer is formed on the second surface and a projection of the opening on the second surface is overlapped with a projection of the second metal layer on the second surface. The electronic assembly is electrically connected with the first metal layer and the second metal layer.

Abstract: The disclosure provides an electromagnetic wave adjustment apparatus includes a control circuit, a transistor circuit die and an electronic assembly. The transistor circuit die receives a control signal from the control circuit and drives the electronic assembly.

Abstract: A care system monitoring method for sensing the movement state of a bedridden person is provided. The care system monitoring method includes the following stages. Initial-state information is sensed. A first warning signal is issued to remind the caregiver to perform a movement action on the bedridden person when the time that the bedridden person has been in the initial state exceeds the threshold period. First-state information (which is information that is collected when the bedridden person is in the first state) is sensed after completing the movement action. It is determined whether the bedridden person was moved correctly according to the initial-state information and the first-state information. The first-state information is reset as the initial-state information if it is determined that the bedridden person has been moved correctly. A second warning signal is issued if it is determined that the bedridden person has been moved incorrectly.

Abstract: An electronic device includes a substrate, a first silicon transistor, a second silicon transistor and a first oxide semiconductor transistor. The first silicon transistor, the second silicon transistor and the first oxide semiconductor transistor are disposed on the substrate. The first silicon transistor has a first terminal electrically connected to a first voltage level, a second terminal and a control terminal. The second silicon transistor has a first terminal electrically connected to the second terminal of the first silicon transistor, a second terminal electrically connected to a second voltage level, and a control terminal electrically connected to the control terminal of the first silicon transistor. The first oxide semiconductor transistor has a first terminal electrically connected to the first terminal of the second silicon transistor. Wherein, a voltage value of the first voltage level is greater than a voltage value of the second voltage level.

Abstract: An electronic device includes a light emitting layer, a light conversion layer and an adjustable structure. The light emitting layer has a plurality of light emitting units for emitting light. The light conversion layer converts the wavelength of the light emitted by at least one light emitting unit to provide converted light. The adjustable structure is controlled to adjust a light penetrating area to correspond to the affected part to be treated, wherein at least one of the light and the converted light passes through the light penetrating area to irradiate the affected part.

Abstract: A driving circuit includes a first transistor, a second transistor and a third transistor. The first transistor has a first terminal connected to a first voltage level, a second terminal, and a third terminal. The second transistor has a first terminal connected to the second terminal of the first transistor, a second terminal connected to a second voltage level, and a third terminal connected to the third terminal of the first transistor. The third transistor has a first terminal connected to the first terminal of the second transistor. The first transistor and the second transistor are low temperature poly-silicon transistors, and the third transistor is an oxide semiconductor transistor.

Abstract: The disclosure provides an electronic apparatus. The electronic apparatus includes a substrate, a first metal layer, an insulating layer, a first conductor, an electronic assembly and a transistor circuit die. The first metal layer is disposed on the substrate. The insulating layer is disposed on the substrate. The first conductor is formed in a first via of the insulating layer. The electronic assembly is disposed on the substrate and electrically connected to the first metal layer through the first conductor. The transistor circuit die is electrically connected to the first metal layer.

Abstract: A manufacturing method of a flexible electronic device includes providing a carrier substrate, forming a first layer on the carrier substrate, forming an insulating layer on a first surface of the first layer, forming a plurality of transistors on the insulating layer, wherein the plurality of transistors include at least one first transistor and at least one second transistor, patterning the insulating layer into a plurality of first portions, wherein the at least one first transistor and the at least one second transistor are respectively disposed on two adjacent ones of the plurality of first portions, removing the carrier substrate, and attaching a flexible substrate to a second surface of the first layer opposite to the first surface. The two adjacent ones of the plurality of first portions are isolated from each other.

Abstract: A driving circuit includes a first transistor, a second transistor and a third transistor. The first transistor has a first terminal connected to a first voltage level, a second terminal, and a third terminal The second transistor has a first terminal connected to the second terminal of the first transistor, a second terminal connected to a second voltage level, and a third terminal connected to the third terminal of the first transistor. The third transistor has a first terminal connected to the first terminal of the second transistor. The first transistor and the second transistor are low temperature poly-silicon transistors, and the third transistor is an oxide semiconductor transistor.

Abstract: An electronic device includes a plurality of treatment components. The treatment components include a first treatment component and a second treatment component, wherein the first treatment component and the second treatment component are independently controlled. Therefore, the convenience of use may be increased, or the treatment effect on the target area may be increased.

Abstract: The disclosure provides an electromagnetic wave adjustment apparatus includes a control circuit, a transistor circuit die and an electronic assembly. The transistor circuit die receives a control signal from the control circuit and drives the electronic assembly.

Abstract: The disclosure provides an electronic apparatus. The electronic apparatus includes a substrate, a first metal layer, an insulating layer, a first conductor, an electronic assembly and a transistor circuit die. The first metal layer is disposed on the substrate. The insulating layer is disposed on the substrate. The first conductor is formed in a first via of the insulating layer. The electronic assembly is disposed on the substrate and electrically connected to the first metal layer through the first conductor. The transistor circuit die is electrically connected to the first metal layer.

Abstract: A driving circuit includes a first transistor having a first terminal, a second terminal and a control terminal; a second transistor having a first terminal connected to the second terminal of the first transistor and a second terminal connected to an organic light-emitting diode; a third transistor having a first terminal connected to the control terminal of the first transistor; a fourth transistor having a first terminal connected to the first terminal of the first transistor; and a fifth transistor having a first terminal connected to the second terminal of the second transistor. The first transistor, the second transistor and the fourth transistor are low temperature poly-silicon transistors, and the third transistor is an oxide semiconductor transistor.