Abstract: A photographing optical lens assembly includes, in order from an object side to an image side along an optical axis, a first lens element, a second lens element, a third lens element, a fourth lens element and a fifth lens element. The first lens element has positive refractive power. The second lens element has negative refractive power. The third lens element has an object-side surface being convex in a paraxial region thereof.

Abstract: An apparatus includes a six-axis correction stage, an auto-collimation measurement device, a light splitter, a telecentric image measurement device, and a controller. The six-axis correction stage carries a device under test; the auto-collimation measurement device is arranged above the six-axis correction stage along a measurement optical axis; the light splitter is arranged on the measurement optical axis and is interposed between the six-axis correction stage and the auto-collimation measurement device. A method controls the six-axis correction stage to correct rotation errors in at least two degrees of freedom of the device under test according to a measurement result of the auto-collimation measurement device, and controls the six-axis correction stage to correct translation and yaw errors in at least three degrees of freedom of the device under test according to a measurement result of the telecentric image measurement device by means of the controller.

Abstract: An optoelectronic package structure and a method of manufacturing an optoelectronic package structure are provided. The optoelectronic package structure includes a photonic component. The photonic component has an electrical connection region, a blocking region and a region for accommodating a device. The blocking region is located between the electrical connection region and the region for accommodating a device.

Abstract: The disclosure provides a power management method. The power management method is applicable to an electronic device. The electronic device is electrically coupled to an adapter, and includes a system and a battery. The adapter has a feed power. The battery has a discharge power. The power management method of the disclosure includes: reading a power value of the battery; determining a state of the system; and discharging power to the system, when the system is in a power-on state and the power value is greater than a charging stopping value, by using the battery, and controlling, according to the discharge power and the feed power, the adapter to selectively supply power to the system. The disclosure further provides an electronic device using the power management method.

Abstract: A photographing optical lens assembly includes, in order from an object side to an image side along an optical axis, a first lens element, a second lens element, a third lens element, a fourth lens element and a fifth lens element. The first lens element has positive refractive power. The second lens element has negative refractive power. The third lens element has an object-side surface being convex in a paraxial region thereof.

Abstract: The solid-state image sensor includes a semiconductor substrate having first and second photoelectric conversion elements, a color filter layer, and a hybrid layer. The isolation structure is disposed between the first and second photoelectric conversion elements. The color filter layer is disposed above the semiconductor substrate. The hybrid layer is disposed between the semiconductor substrate and the color filter layer. The hybrid layer includes a first partition structure, a second partition structure, and a transparent layer. The first partition structure is disposed to correspond to the isolation structure. The second partition structure is surrounded by the first partition structure. The transparent layer is between the first partition structure and the second partition structure. The refractive index of the first partition structure and the refractive index of the second partition structure are lower than the refractive index of the transparent layer.

Abstract: A method for monitoring and controlling multi-phase condition of reactant in manufacturing process is provided. The monitoring and controlling method includes the following steps. A plurality of clusters of monitoring images is captured corresponding to a plurality of process reaction time points in a plurality of observation regions. According to the clusters of the monitoring images, a plurality of image index features is extracted. According to the image index features, a plurality of phase modes corresponding to the observation regions is determined. According to the image index features, a cluster of generation characteristics of the reactant corresponding to the phase modes is determined. According to the cluster of generation characteristics, an adjustment of the manufacturing process is performed.

Abstract: A solid-state image sensor is provided. The solid-state image sensor includes a plurality of photoelectric conversion elements. The solid-state image sensor also includes a first color filter layer disposed above the photoelectric conversion elements and having a plurality of first color filter segments. The solid-state image sensor further includes a second color filter layer disposed adjacent to the first color filter layer and having a plurality of second color filter segments. The solid-state image sensor includes a first grid structure disposed between the first color filter layer and the second color filter layer. The first grid structure has a first grid height. The solid-state image sensor also includes a second grid structure disposed between the first color filter segments and between the second color filter segments. The second grid structure has a second grid height that is lower than or equal to the first grid height.

Abstract: A solid-state image sensor is provided. The solid-state image sensor includes photoelectric conversion elements and a color filter layer disposed above the photoelectric conversion elements. The photoelectric conversion elements and the color filter layer form normal pixels and auto-focus pixels, the color filter layer that correspond to the normal pixels are divided into first color filter segments and second color filter segments, the first color filter segments are disposed on at least one side that is closer to an incident light, and the width of the first color filter segments is greater than the width of the second color filter segments.

Abstract: A solid-state image sensor having a first region and a second region adjacent to the first region along a first direction is provided. The solid-state image sensor includes a first unit pattern disposed in the first region. The solid-state image sensor also includes a second unit pattern disposed in the second region and corresponding to the first unit pattern. The first unit pattern and the second unit pattern each includes normal pixels and an auto-focus pixel array. The normal pixels and the auto-focus pixel array in the first unit pattern form a first arrangement, the normal pixels and the auto-focus pixel array in the second unit pattern form a second arrangement, and the first arrangement and the second arrangement are symmetric with respect to the first axis of symmetry.

Abstract: A solid-state image sensor having a first region and a second region adjacent to the first region along a first direction is provided. The solid-state image sensor includes a first unit pattern disposed in the first region. The solid-state image sensor also includes a second unit pattern disposed in the second region and corresponding to the first unit pattern. The first unit pattern and the second unit pattern each includes normal pixels and an auto-focus pixel array. The normal pixels and the auto-focus pixel array in the first unit pattern form a first arrangement, the normal pixels and the auto-focus pixel array in the second unit pattern form a second arrangement, and the first arrangement and the second arrangement are symmetric with respect to the first axis of symmetry.

Abstract: The solid-state image sensor includes a semiconductor substrate having first and second photoelectric conversion elements, a color filter layer, and a hybrid layer. The isolation structure is disposed between the first and second photoelectric conversion elements. The color filter layer is disposed above the semiconductor substrate. The hybrid layer is disposed between the semiconductor substrate and the color filter layer. The hybrid layer includes a first partition structure, a second partition structure, and a transparent layer. The first partition structure is disposed to correspond to the isolation structure. The second partition structure is surrounded by the first partition structure. The transparent layer is between the first partition structure and the second partition structure. The refractive index of the first partition structure and the refractive index of the second partition structure are lower than the refractive index of the transparent layer.

Abstract: An image sensor includes: a group of autofocus sensor units; neighboring sensor units adjacent to and surrounding the group of autofocus sensor units, wherein each of the neighboring sensor units has a first side close to the group of autofocus sensor units, and a second side away from the group of autofocus sensor units. The image sensor further includes: a first light shielding structure disposed between the group of autofocus sensor units and the neighboring sensor units; a first extra light shielding structure laterally extending from the first light shielding structure and disposed on at least one of the first side and the second side of one or more of the neighboring sensor units.

Abstract: A fingerprint recognition device includes a light source, a light conversion layer, a light detector, and a light filter. The light source is configured to emit a first light having a first wavelength. The light conversion layer is configured to convert the first light to a second light having a second wavelength different from the first wavelength. The light detector is configured to detect the second light reflected by a fingerprint. The light filter is disposed between the light conversion layer and the light detector, and configured to substantially filter out the first light and substantially pass the second light.

Abstract: A solid-state image sensor is provided. The solid-state image sensor includes a plurality of photoelectric conversion elements. The solid-state image sensor also includes a first color filter layer disposed above the photoelectric conversion elements and having a plurality of first color filter segments. The solid-state image sensor further includes a second color filter layer disposed adjacent to the first color filter layer and having a plurality of second color filter segments. The solid-state image sensor includes a first grid structure disposed between the first color filter layer and the second color filter layer. The first grid structure has a first grid height. The solid-state image sensor also includes a second grid structure disposed between the first color filter segments and between the second color filter segments. The second grid structure has a second grid height that is lower than or equal to the first grid height.

Abstract: A fingerprint recognition device includes a light source, a light conversion layer, a light detector, and a light filter. The light source is configured to emit a first light having a first wavelength. The light conversion layer is configured to convert the first light to a second light having a second wavelength different from the first wavelength. The light detector is configured to detect the second light reflected by a fingerprint. The light filter is disposed between the light conversion layer and the light detector, and configured to substantially filter out the first light and substantially pass the second light.

Abstract: A fingerprint recognition device includes a light source, a light conversion layer, a light detector, and a light filter. The light source is configured to emit a first light having a first wavelength. The light conversion layer is configured to convert the first light to a second light having a second wavelength different from the first wavelength. The light detector is configured to detect the second light reflected by a fingerprint. The light filter is disposed between the light conversion layer and the light detector, and configured to substantially filter out the first light and substantially pass the second light.

Abstract: A solid-state imaging device includes multiple photoelectric conversion elements arrayed in a pixel array. The solid-state imaging device also includes a color filter layer having multiple color filter segments above the photoelectric conversion elements. Each of the color filter segments is disposed in a respective pixel of the pixel array. The solid-state imaging device further includes an optical waveguide layer over the color filter layer. The optical waveguide layer includes a waveguide partition grid and a waveguide material in the spaces of the waveguide partition grid. The waveguide material has a refractive index that is higher than the refractive index of the waveguide partition grid. The waveguide material provides the same refractive index for each pixel of the pixel array.

Abstract: A fingerprint recognition device includes a light source, a light conversion layer, a light detector, and a light filter. The light source is configured to emit a first light having a first wavelength. The light conversion layer is configured to convert the first light to a second light having a second wavelength different from the first wavelength. The light detector is configured to detect the second light reflected by a fingerprint. The light filter is disposed between the light conversion layer and the light detector, and configured to substantially filter out the first light and substantially pass the second light.

Abstract: A lens device comprises a connect assembly, a lens assembly and a drive assembly. The lens assembly is disposed on the connect assembly and has a central axis. The drive assembly comprises a first coil, a magnet and a second coil. The first coil is wound around the lens assembly. The magnet is disposed on the connect assembly and has a first magnetic pole, a second magnetic pole, a first direction of magnetic field and a second direction of magnetic field. The first direction of magnetic field and the second direction of magnetic field are not parallel to each other. The first direction of magnetic field points toward the first coil. The second coil is disposed on the connect assembly. The second direction of magnetic field points toward a part of the second coil.