Patents by Inventor Cheng-Hung Tsai

Cheng-Hung Tsai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240194858
    Abstract: A composition includes an active composition. The active composition includes a niobium-titanium oxide and a silicon active material, or includes a doped niobium-titanium oxide and the silicon active material. The niobium-titanium oxide includes niobium element, titanium element and oxygen element. The doped niobium-titanium oxide includes niobium element, titanium element and oxygen element.
    Type: Application
    Filed: December 6, 2023
    Publication date: June 13, 2024
    Inventors: Po-Tsun CHEN, Shih Yu HUANG, Cheng-Yu TSAI, Chun-Hung TENG
  • Publication number: 20240186400
    Abstract: According to an exemplary embodiment, a method of forming a vertical device is provided. The method includes: providing a protrusion over a substrate; forming an etch stop layer over the protrusion; laterally etching a sidewall of the etch stop layer; forming an insulating layer over the etch stop layer; forming a film layer over the insulating layer and the etch stop layer; performing chemical mechanical polishing on the film layer and exposing the etch stop layer; etching a portion of the etch stop layer to expose a top surface of the protrusion; forming an oxide layer over the protrusion and the film layer; and performing chemical mechanical polishing on the oxide layer and exposing the film layer.
    Type: Application
    Filed: February 13, 2024
    Publication date: June 6, 2024
    Inventors: De-Fang Chen, Teng-Chun Tsai, Cheng-Tung Lin, Li-Ting Wang, Chun-Hung Lee, Ming-Ching Chang, Huan-Just Lin
  • Patent number: 11990524
    Abstract: A method includes forming a dummy gate structure across a fin, in which the dummy gate structure has a dummy gate dielectric layer and a dummy gate electrode, forming gate spacers on sidewalls of the dummy gate structure, forming source/drain epitaxial structures on sides of the dummy gate structure, performing a first etch process to the dummy gate electrode such that a recessed dummy gate electrode remains over the fin, performing a second etch process to the gate spacers such that recessed gate spacers remain over the sidewalls of the dummy gate structure, removing the recessed dummy gate electrode and the dummy gate dielectric layer after the second etch process to form a recess between the recessed gate spacers, forming a gate structure overfilling the recess, and performing a third etch process to the gate structure such that a recessed gate structure remains between the recessed gate spacers.
    Type: Grant
    Filed: August 30, 2021
    Date of Patent: May 21, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Hsiao-Chien Lin, Hsi Chung Chen, Cheng-Hung Tsai, Chih-Hsuan Lin
  • Publication number: 20240157217
    Abstract: A golf teaching method and a golf teaching system are provided. The golf teaching method includes: configuring image capturing devices and golf simulator to capture swing images and corresponding simulator data records, when a user performs a golf swing; configuring an expert model that includes expert motion information and corresponding correction suggestion information; configuring a computing device to perform an analysis process on the swing images and the simulator data records to divide the golf swing into user motions according to stages and obtaining records of user motion information corresponding to the plurality of stages, and to compare the user motion information with the corresponding expert motion information in each stage through the expert model, and to provide the corresponding correction suggestion information according to a comparison result; and configuring a user interface to provide the correction suggestion information.
    Type: Application
    Filed: April 20, 2023
    Publication date: May 16, 2024
    Inventors: CHENG-HUNG TSAI, CHIA-YU JIH, CHIH-CHUNG CHIEN, LI-LIN LU, SHAO-JUN TAN, WEN-FU LAI
  • Publication number: 20240147717
    Abstract: A pick-up structure of a memory device and a method of manufacturing the memory device are provided. The pick-up structure includes pick-up electrode stripes. Each pickup electrode stripe includes a main body portion in the peripheral pick-up region and an extending portion extending from the main body portion to the memory cell region. The extending portion is narrower than the main body portion. The sidewall surface of the extending portion is aligned with the sidewall surface of the main body portion.
    Type: Application
    Filed: October 20, 2023
    Publication date: May 2, 2024
    Inventors: Hsin-Hung CHOU, Cheng-Shuai LI, Kao-Tsair TSAI
  • Publication number: 20240135184
    Abstract: Aspects of the disclosure provide an evolutionary neural architecture search (ENAS) method. For example, the ENAS method can include steps (a) performing one or more evolutionary operations on an initial population of neural architectures to generate offspring neural architectures, (b) evaluating performance of each of the offspring neural architectures to obtain at least one evaluation value of the offspring neural architecture with respect to a performance metric, (c) adjusting the evaluation values of the offspring neural architectures based on at least one constraint on the evaluation values, (d) selecting at least one of the offspring neural architectures as a new population of neural architectures, and (e) outputting the new population of neural architectures as a last population of neural architectures when a stopping criterion is achieved, or (f) iterating steps (a) to (d) with the new population of neural architectures being taken as the initial population of neural architectures.
    Type: Application
    Filed: October 5, 2023
    Publication date: April 25, 2024
    Applicant: MEDIATEK INC.
    Inventors: Yun-Chan TSAI, Min-Fong HORNG, Chia-Hsiang LIU, Cheng-Sheng CHAN, ShengJe HUNG
  • Publication number: 20240118462
    Abstract: A bokeh filter membrane, which is disposed on a surface of a substrate, includes a gradient thickness absorbing membrane and an anti-reflection membrane. The anti-reflection membrane includes a high-and-low refraction membrane and a gradient refraction membrane. A transmittance of the substrate at a center thereof is greater than a transmittance of the substrate at a peripheral region thereof. The high-and-low refraction membrane includes a first high-and-low refraction membrane and a second high-and-low refraction membrane, the gradient thickness absorbing membrane is farther away from the substrate than the first high-and-low refraction membrane, the second high-and-low refraction membrane is farther away from the substrate than the gradient thickness absorbing membrane, and the gradient refraction membrane is farther away from the substrate than the second high-and-low refraction membrane. The gradient refraction membrane includes a plurality of pores.
    Type: Application
    Filed: October 4, 2023
    Publication date: April 11, 2024
    Inventors: Wen-Yu TSAI, Cheng-Yu TSAI, Chun-Hung TENG
  • Publication number: 20240111138
    Abstract: A catadioptric optical membrane, which is disposed on a surface of a substrate, includes a reflection membrane and a matting membrane. The reflection membrane is disposed on an effective optical path area of the substrate and includes a reflection metal membrane and a reflection oxidation membrane. The reflection oxidation membrane includes a first reflection oxidation membrane and a second reflection oxidation membrane. The reflection metal membrane is farther away from the substrate than the first reflection oxidation membrane. The second reflection oxidation membrane is farther away from the substrate than the reflection metal membrane. The matting membrane is disposed on a non-effective optical path area of the substrate. The matting membrane includes a deep-color membrane and a first anti-reflection membrane. The deep-color membrane includes a deep-color metal membrane and a deep-color oxidation membrane. The deep-color membrane is farther away from the substrate than the first anti-reflection membrane.
    Type: Application
    Filed: September 27, 2023
    Publication date: April 4, 2024
    Inventors: Wen-Yu TSAI, Shih-Han CHEN, Chun-Yen CHEN, Cheng-Yu TSAI, Chun-Hung TENG
  • Patent number: 11949799
    Abstract: Disclosed is an input/output circuit for a physical unclonable function generator circuit. In one embodiment, a physical unclonable function (PUF) generator includes: a PUF cell array comprising a plurality of bit cells configured in a plurality of columns and at least one row, and at least one input/output (I/O) circuit each coupled to at least two neighboring columns of the PUF cell array, wherein the at least one I/O circuit each comprises a sense amplifier (SA) with no cross-coupled pair of transistors, wherein the SA comprises two cross-coupled inverters with no access transistor and a SA enable transistor, and wherein the at least one I/O circuit each is configured to access and determine logical states of at least two bit cells in the at least two neighboring columns; and based on the determined logical states of the plurality of bit cells, to generate a PUF signature.
    Type: Grant
    Filed: April 5, 2021
    Date of Patent: April 2, 2024
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Jui-Che Tsai, Shih-Lien Linus Lu, Cheng Hung Lee, Chia-En Huang
  • Publication number: 20240103641
    Abstract: In one example, a keyboard housing may include a chassis, a plurality of keys exposed through a top surface of the chassis, and an input device assembly connected to the chassis. The input device assembly may include a flexible touch sensing component to receive a touch input and a support structure. The support structure may include a first portion and a second portion foldable onto the first portion. The first portion and the second portion may support the flexible touch sensing component.
    Type: Application
    Filed: November 6, 2019
    Publication date: March 28, 2024
    Applicant: Hewlett-Packard Development Company, L.P.
    Inventors: Cheng-Han Tsai, Midas Wu, Wen-Hung Wang
  • Patent number: 11935871
    Abstract: A semiconductor package including a first semiconductor die, a second semiconductor die, a first insulating encapsulation, a dielectric layer structure, a conductor structure and a second insulating encapsulation is provided. The first semiconductor die includes a first semiconductor substrate and a through silicon via (TSV) extending from a first side to a second side of the semiconductor substrate. The second semiconductor die is disposed on the first side of the semiconductor substrate. The first insulating encapsulation on the second semiconductor die encapsulates the first semiconductor die. A terminal of the TSV is coplanar with a surface of the first insulating encapsulation. The dielectric layer structure covers the first semiconductor die and the first insulating encapsulation. The conductor structure extends through the dielectric layer structure and contacts with the through silicon via.
    Type: Grant
    Filed: August 30, 2021
    Date of Patent: March 19, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Hao-Yi Tsai, Cheng-Chieh Hsieh, Tsung-Hsien Chiang, Hui-Chun Chiang, Tzu-Sung Huang, Ming-Hung Tseng, Kris Lipu Chuang, Chung-Ming Weng, Tsung-Yuan Yu, Tzuan-Horng Liu
  • Publication number: 20240088204
    Abstract: Semiconductor structures and methods are provided. An exemplary method includes depositing a first conductive material layer over a substrate, patterning the first conductive material layer to form a first conductor plate over the substrate, forming a first high-K dielectric layer over the first conductor plate, forming a second high-K dielectric layer on the first high-K dielectric layer, forming a third high-K dielectric layer on the second high-K dielectric layer, and forming a second conductor plate over the third high-K dielectric layer and vertically overlapped with the first conductor plate, where a composition of the first high-K dielectric layer is the same as a composition of the third high-K dielectric layer and is different from a composition of the second high-K dielectric layer.
    Type: Application
    Filed: March 22, 2023
    Publication date: March 14, 2024
    Inventors: Li Chung Yu, Shin-Hung Tsai, Cheng-Hao Hou, Hsiang-Ku Shen, Chen-Chiu Huang, Dian-Hau Chen
  • Patent number: 11926389
    Abstract: A tilting vehicle includes a frame unit, a tilting mechanism and two front wheels. The frame unit includes a head tube extending generally along an up-down direction, and a main frame detachably connected to the head tube. The tilting mechanism includes one crossbar pivotally connected to the head tube and extending along a left-right direction, and two connecting rods extending along the up-down direction, being opposite to each other along the left-right direction, and being pivotally connected to opposite ends of the one crossbar, respectively, such that the connecting rods are movable along the up-down direction relative to the head tube. The front wheels are rotatably mounted to the connecting rods, respectively.
    Type: Grant
    Filed: July 18, 2022
    Date of Patent: March 12, 2024
    Assignee: Kwang Yang Motor Co., Ltd.
    Inventors: Cheng-Hung Huang, Feng-Chih Tsai
  • Publication number: 20240076422
    Abstract: A supported metallocene catalyst includes a carrier and a metallocene component. The carrier includes an inorganic oxide particle and an alkyl aluminoxane material. The inorganic oxide particle includes at least one inorganic oxide compound selected from the group consisting of an oxide of Group 3A and an oxide of Group 4A. The alkyl aluminoxane material includes an alkyl aluminoxane compound and an alkyl aluminum compound that is present in amount ranging from greater than 0.01 wt % to less than 14 wt % base on 100 wt % of the alkyl aluminoxane material. The metallocene component is supported on the carrier, and includes one of a metallocene compound containing a metal from Group 3B, a metallocene compound containing a metal from Group 4B, and a combination thereof. A method for preparing the supported metallocene catalyst and a method for preparing polyolefin using the supported metallocene catalyst are also disclosed.
    Type: Application
    Filed: September 1, 2023
    Publication date: March 7, 2024
    Inventors: Jing-Cherng TSAI, Jen-Long WU, Wen-Hao KANG, Kuei-Pin LIN, Jing-Yu LEE, Jun-Ye HONG, Zih-Yu SHIH, Cheng-Hung CHIANG, Gang-Wei SHEN, Yu-Chuan SUNG, Chung-Hua WENG, Hsing-Ya CHEN
  • Patent number: 11916131
    Abstract: According to an exemplary embodiment, a method of forming a vertical device is provided. The method includes: providing a protrusion over a substrate; forming an etch stop layer over the protrusion; laterally etching a sidewall of the etch stop layer; forming an insulating layer over the etch stop layer; forming a film layer over the insulating layer and the etch stop layer; performing chemical mechanical polishing on the film layer and exposing the etch stop layer; etching a portion of the etch stop layer to expose a top surface of the protrusion; forming an oxide layer over the protrusion and the film layer; and performing chemical mechanical polishing on the oxide layer and exposing the film layer.
    Type: Grant
    Filed: November 4, 2020
    Date of Patent: February 27, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company Limited
    Inventors: De-Fang Chen, Teng-Chun Tsai, Cheng-Tung Lin, Li-Ting Wang, Chun-Hung Lee, Ming-Ching Chang, Huan-Just Lin
  • Publication number: 20240004304
    Abstract: Methods and apparatuses for a lithography exposure process are described. The method includes irradiating a target droplet with a laser beam to create an extreme ultraviolet (EUV) light. The methods utilized and the apparatuses include two or more collectors for collecting the generated EUV light and reflecting the collected EUV light to a focal point of one of the collectors. In some embodiments, one of the two collectors includes a ring-shaped collector.
    Type: Application
    Filed: June 30, 2022
    Publication date: January 4, 2024
    Inventors: Cheng Hung TSAI, Sheng-Kang YU, Shang-Chieh CHIEN, Heng-Hsin LIU, Li-Jui CHEN
  • Publication number: 20230421740
    Abstract: A video processing device for virtual reality is provided. The video processing device includes a video input mechanism configured to receive a first and a second original video obtained from a first camera device; a video processing mechanism in transmission connecting to the video input mechanism, the video processing mechanism includes a first video processing unit configured to adjust the first and the second original video to a first video and a second video, the first video processing unit is configured to further combine the first video and the second video into a third video having a 16:9 aspect ratio, and dimensions of the third video being a total of those of the first and the second video; and a video output mechanism in transmission connecting to the video processing mechanism through a physical wire. A video generating system for virtual reality is also provided.
    Type: Application
    Filed: September 8, 2023
    Publication date: December 28, 2023
    Inventors: YA-CHING KO, CHENG HUNG TSAI
  • Publication number: 20230400763
    Abstract: A method includes: depositing a mask layer over a substrate; directing first radiation reflected from a central collector section of a sectional collector of a lithography system toward the mask layer according to a pattern; directing second radiation reflected from a peripheral collector section of the sectional collector toward the mask layer according to the pattern, wherein the peripheral collector section is vertically separated from the central collector section by a gap; forming openings in the mask layer by removing first regions of the mask layer exposed to the first radiation and second regions of the mask layer exposed to the second radiation; and removing material of a layer underlying the mask layer exposed by the openings.
    Type: Application
    Filed: August 8, 2023
    Publication date: December 14, 2023
    Inventors: Cheng Hung TSAI, Sheng-Kang YU, Shang-Chieh CHIEN, Heng-Hsin LIU, Li-Jui CHEN
  • Publication number: 20230375944
    Abstract: An extreme ultraviolet (EUV) photolithography system includes a scanner that directs the EUV light onto an EUV reticle. The photolithography system includes one or more contamination reduction structures positioned within the scanner and configured to attract and decompose contaminant particles within the scanner. The contamination reduction structure includes a surface material that is highly electronegative.
    Type: Application
    Filed: May 20, 2022
    Publication date: November 23, 2023
    Inventors: Shang-Chieh CHIEN, Tzu-Jung PAN, Wei-Shin CHENG, Cheng Hung TSAI, Li-Jui CHEN, Heng-Hsin LIU
  • Patent number: 11792380
    Abstract: The disclosure provides a video transmission method for virtual reality. The method includes reorganizing a first video and a second video obtained to generate a third video suitable for transmission through a physical wire, hence avoiding distortion caused by compression of a high-definition video. The disclosure further includes a video processing device and a video generating system employing the video transmission method.
    Type: Grant
    Filed: September 30, 2021
    Date of Patent: October 17, 2023
    Assignee: FUNIQUE VR STUDIO
    Inventors: Ya-Ching Ko, Cheng Hung Tsai