Abstract: A bokeh filter membrane, which is disposed on a surface of a substrate, includes a gradient thickness absorbing membrane and an anti-reflection membrane. The anti-reflection membrane includes a high-and-low refraction membrane and a gradient refraction membrane. A transmittance of the substrate at a center thereof is greater than a transmittance of the substrate at a peripheral region thereof. The high-and-low refraction membrane includes a first high-and-low refraction membrane and a second high-and-low refraction membrane, the gradient thickness absorbing membrane is farther away from the substrate than the first high-and-low refraction membrane, the second high-and-low refraction membrane is farther away from the substrate than the gradient thickness absorbing membrane, and the gradient refraction membrane is farther away from the substrate than the second high-and-low refraction membrane. The gradient refraction membrane includes a plurality of pores.

Abstract: A catadioptric optical membrane, which is disposed on a surface of a substrate, includes a reflection membrane and a matting membrane. The reflection membrane is disposed on an effective optical path area of the substrate and includes a reflection metal membrane and a reflection oxidation membrane. The reflection oxidation membrane includes a first reflection oxidation membrane and a second reflection oxidation membrane. The reflection metal membrane is farther away from the substrate than the first reflection oxidation membrane. The second reflection oxidation membrane is farther away from the substrate than the reflection metal membrane. The matting membrane is disposed on a non-effective optical path area of the substrate. The matting membrane includes a deep-color membrane and a first anti-reflection membrane. The deep-color membrane includes a deep-color metal membrane and a deep-color oxidation membrane. The deep-color membrane is farther away from the substrate than the first anti-reflection membrane.

Abstract: Disclosed is an input/output circuit for a physical unclonable function generator circuit. In one embodiment, a physical unclonable function (PUF) generator includes: a PUF cell array comprising a plurality of bit cells configured in a plurality of columns and at least one row, and at least one input/output (I/O) circuit each coupled to at least two neighboring columns of the PUF cell array, wherein the at least one I/O circuit each comprises a sense amplifier (SA) with no cross-coupled pair of transistors, wherein the SA comprises two cross-coupled inverters with no access transistor and a SA enable transistor, and wherein the at least one I/O circuit each is configured to access and determine logical states of at least two bit cells in the at least two neighboring columns; and based on the determined logical states of the plurality of bit cells, to generate a PUF signature.

Abstract: In one example, a keyboard housing may include a chassis, a plurality of keys exposed through a top surface of the chassis, and an input device assembly connected to the chassis. The input device assembly may include a flexible touch sensing component to receive a touch input and a support structure. The support structure may include a first portion and a second portion foldable onto the first portion. The first portion and the second portion may support the flexible touch sensing component.

Abstract: A semiconductor package including a first semiconductor die, a second semiconductor die, a first insulating encapsulation, a dielectric layer structure, a conductor structure and a second insulating encapsulation is provided. The first semiconductor die includes a first semiconductor substrate and a through silicon via (TSV) extending from a first side to a second side of the semiconductor substrate. The second semiconductor die is disposed on the first side of the semiconductor substrate. The first insulating encapsulation on the second semiconductor die encapsulates the first semiconductor die. A terminal of the TSV is coplanar with a surface of the first insulating encapsulation. The dielectric layer structure covers the first semiconductor die and the first insulating encapsulation. The conductor structure extends through the dielectric layer structure and contacts with the through silicon via.

Abstract: Semiconductor structures and methods are provided. An exemplary method includes depositing a first conductive material layer over a substrate, patterning the first conductive material layer to form a first conductor plate over the substrate, forming a first high-K dielectric layer over the first conductor plate, forming a second high-K dielectric layer on the first high-K dielectric layer, forming a third high-K dielectric layer on the second high-K dielectric layer, and forming a second conductor plate over the third high-K dielectric layer and vertically overlapped with the first conductor plate, where a composition of the first high-K dielectric layer is the same as a composition of the third high-K dielectric layer and is different from a composition of the second high-K dielectric layer.

Abstract: A tilting vehicle includes a frame unit, a tilting mechanism and two front wheels. The frame unit includes a head tube extending generally along an up-down direction, and a main frame detachably connected to the head tube. The tilting mechanism includes one crossbar pivotally connected to the head tube and extending along a left-right direction, and two connecting rods extending along the up-down direction, being opposite to each other along the left-right direction, and being pivotally connected to opposite ends of the one crossbar, respectively, such that the connecting rods are movable along the up-down direction relative to the head tube. The front wheels are rotatably mounted to the connecting rods, respectively.

Abstract: A supported metallocene catalyst includes a carrier and a metallocene component. The carrier includes an inorganic oxide particle and an alkyl aluminoxane material. The inorganic oxide particle includes at least one inorganic oxide compound selected from the group consisting of an oxide of Group 3A and an oxide of Group 4A. The alkyl aluminoxane material includes an alkyl aluminoxane compound and an alkyl aluminum compound that is present in amount ranging from greater than 0.01 wt % to less than 14 wt % base on 100 wt % of the alkyl aluminoxane material. The metallocene component is supported on the carrier, and includes one of a metallocene compound containing a metal from Group 3B, a metallocene compound containing a metal from Group 4B, and a combination thereof. A method for preparing the supported metallocene catalyst and a method for preparing polyolefin using the supported metallocene catalyst are also disclosed.

Abstract: According to an exemplary embodiment, a method of forming a vertical device is provided. The method includes: providing a protrusion over a substrate; forming an etch stop layer over the protrusion; laterally etching a sidewall of the etch stop layer; forming an insulating layer over the etch stop layer; forming a film layer over the insulating layer and the etch stop layer; performing chemical mechanical polishing on the film layer and exposing the etch stop layer; etching a portion of the etch stop layer to expose a top surface of the protrusion; forming an oxide layer over the protrusion and the film layer; and performing chemical mechanical polishing on the oxide layer and exposing the film layer.

Abstract: Methods and apparatuses for a lithography exposure process are described. The method includes irradiating a target droplet with a laser beam to create an extreme ultraviolet (EUV) light. The methods utilized and the apparatuses include two or more collectors for collecting the generated EUV light and reflecting the collected EUV light to a focal point of one of the collectors. In some embodiments, one of the two collectors includes a ring-shaped collector.

Abstract: A video processing device for virtual reality is provided. The video processing device includes a video input mechanism configured to receive a first and a second original video obtained from a first camera device; a video processing mechanism in transmission connecting to the video input mechanism, the video processing mechanism includes a first video processing unit configured to adjust the first and the second original video to a first video and a second video, the first video processing unit is configured to further combine the first video and the second video into a third video having a 16:9 aspect ratio, and dimensions of the third video being a total of those of the first and the second video; and a video output mechanism in transmission connecting to the video processing mechanism through a physical wire. A video generating system for virtual reality is also provided.

Abstract: A method includes: depositing a mask layer over a substrate; directing first radiation reflected from a central collector section of a sectional collector of a lithography system toward the mask layer according to a pattern; directing second radiation reflected from a peripheral collector section of the sectional collector toward the mask layer according to the pattern, wherein the peripheral collector section is vertically separated from the central collector section by a gap; forming openings in the mask layer by removing first regions of the mask layer exposed to the first radiation and second regions of the mask layer exposed to the second radiation; and removing material of a layer underlying the mask layer exposed by the openings.

Abstract: An extreme ultraviolet (EUV) photolithography system includes a scanner that directs the EUV light onto an EUV reticle. The photolithography system includes one or more contamination reduction structures positioned within the scanner and configured to attract and decompose contaminant particles within the scanner. The contamination reduction structure includes a surface material that is highly electronegative.

Abstract: The disclosure provides a video transmission method for virtual reality. The method includes reorganizing a first video and a second video obtained to generate a third video suitable for transmission through a physical wire, hence avoiding distortion caused by compression of a high-definition video. The disclosure further includes a video processing device and a video generating system employing the video transmission method.

Abstract: A calibration method and a calibration apparatus for a knob applicable to a touch panel are provided. The knob includes at least one sensing pad. The calibration method includes: obtaining sensed position(s) of each sensing pad by sensing a position of the sensing pad through the touch panel; and calculating a position of a center of the knob by using a formula of a radius of a circumscribed circle according the sensed position(s) of each sensing pad.

Abstract: An electronic device with short frame time length is provided. The electronic device includes a substrate, a plurality of first signal lines, a plurality of second signal lines, and two first integrated circuits. The plurality of first signal lines are disposed on the substrate. The plurality of first signal lines are divided into a first group of signal lines and a second group of signal lines. The plurality of second signal lines are disposed on the substrate. The plurality of second signal lines are disposed alternately with the plurality of first signal lines. The two first integrated circuits are bonded on the substrate. Each of the two first integrated circuits are electrically connected to the first group of signal lines and the second group of signal lines. The first group of signal lines and the second group of signal lines are disposed alternately in columns.

Abstract: An extreme ultra violet (EUV) light source apparatus includes a metal droplet generator, a collector mirror, an excitation laser inlet port for receiving an excitation laser, a first mirror configured to reflect the excitation laser that passes through a zone of excitation, and a second mirror configured to reflect the excitation laser reflected by the first mirror.

Abstract: A method of making a semiconductor device includes steps related to forming source and drain wells of a transistor in a semiconductor substrate; forming a gate electrode of the transistor over the semiconductor substrate; forming an isolation structure in the semiconductor substrate adjacent to the transistor; and depositing a first inter-dielectric layer (ILD) material over the transistor and the isolation structure. The method also includes steps for depositing a capacitor film stack over the first ILD material, forming a pattern in the capacitor film stack over the isolation structure, and forming a capacitor plate by etching a conductive material of the capacitor film stack. Etching the conductive material includes performing a liquid etch process with a selectivity of at least 16 with regard to other materials in the capacitor film stack.

Abstract: An extreme ultra violet (EUV) light source apparatus includes a metal droplet generator, a collector mirror, an excitation laser inlet port for receiving an excitation laser, a first mirror configured to reflect the excitation laser that passes through a zone of excitation, and a second mirror configured to reflect the excitation laser reflected by the first mirror.

Abstract: An extreme ultra violet (EUV) light source apparatus includes a metal droplet generator, a collector mirror, an excitation laser inlet port for receiving an excitation laser, a first mirror configured to reflect the excitation laser that passes through a zone of excitation, and a second mirror configured to reflect the excitation laser reflected by the first mirror.