Abstract: A method of manufacturing a semiconductor device includes forming a photoresist layer over a substrate, including combining a first precursor and a second precursor in a vapor state to form a photoresist material, and depositing the photoresist material over the substrate. A protective layer is formed over the photoresist layer. The photoresist layer is selectively exposed to actinic radiation through the protective layer to form a latent pattern in the photoresist layer. The protective layer is removed, and the latent pattern is developed by applying a developer to the selectively exposed photoresist layer to form a pattern.

Abstract: The present disclosure relates to an image sensor having an image sensing element surrounded by a BDTI structure, and an associated method of formation. In some embodiments, a first image sensing element and a second image sensing element are arranged next to one another within an image sensing die. A pixel dielectric stack is disposed along a back of the image sensing die overlying the image sensing elements. The pixel dielectric stack includes a first high-k dielectric layer and a second high-k dielectric layer. The BDTI structure is disposed between the first image sensing element and the second image sensing element and extends from the back of the image sensor die to a position within the image sensor die. The BDTI structure includes a trench filling layer surrounded by an isolation dielectric stack. The pixel dielectric stack has a composition different from that of the isolation dielectric stack.

Abstract: A photonic structure includes a guiding region, a sensing region, and logic region. The guiding region has a first side and a second side opposite to the first side. The sensing region is disposed on the second side of the guiding region. The logic region is disposed on a side of the sensing region opposite to the guiding region. The guiding region, the sensing region, and the logic region are stacked along a vertical direction. A method for manufacturing the photonic structure is also provided.

Abstract: A micro-electromechanical system (MEMS) device includes a movable comb structure located in a cavity within an enclosure, and a stationary structure affixed to the enclosure. The movable comb structure includes a comb shaft portion and movable comb fingers laterally protruding from the comb shaft portion. The movable comb structure includes a metallic material portion. The movable structure and the stationary structure are configured to generate an electrical output signal based on lateral movement of the movable structure relative to the stationary structure.

Abstract: A method of fabricating magnetoresistive random access memory, including providing a substrate, forming a bottom electrode layer, a magnetic tunnel junction stack, a top electrode layer and a hard mask layer sequentially on the substrate, wherein a material of the top electrode layer is titanium nitride, a material of the hard mask layer is tantalum or tantalum nitride, and a percentage of nitrogen in the titanium nitride gradually decreases from a top surface of top electrode layer to a bottom surface of top electrode layer, and patterning the bottom electrode layer, the magnetic tunnel junction stack, the top electrode layer and the hard mask layer into multiple magnetoresistive random access memory cells.

Abstract: A semiconductor structure manufacturing method includes: providing a substrate; forming, on the substrate, a stack structure including a sacrificial layer and a support layer which are alternately stacked on each other; forming a capacitance hole in the stack structure; forming a first electrode layer on a side wall and a bottom of each capacitance hole; forming a first dielectric layer on an inner surface of the first electrode layer; forming, on the stack structure, an opening from which the sacrificial layer is exposed, and removing the sacrificial layer through the opening; forming a second dielectric layer on an inner surface of the first dielectric layer and an outer surface of the first electrode layer; and forming a second electrode layer on an inner surface and an outer surface of the second dielectric layer.

Abstract: A three-dimensional (3D) integrated circuit (IC) is provided. In some embodiments, the 3D IC comprises a first IC die comprising a first substrate, a first interconnect structure disposed over the first substrate, and a first through substrate via (TSV) disposed through the first substrate. The 3D IC further comprises a second IC die comprising a second substrate, a second interconnect structure disposed over the second substrate, and a second TSV disposed through the second substrate. The 3D IC further comprises a bonding structure arranged between back sides of the first IC die and the second IC die opposite to corresponding interconnect structures and bonding the first IC die and the second IC die. The bonding structure comprises conductive features disposed between and electrically connecting the first TSV and the second TSV.

Abstract: Various embodiments of the present disclosure are directed towards an integrated chip including a plurality of semiconductor devices arranged on a substrate and within a device region. A first isolation structure is arranged in the device region and laterally between adjacent semiconductor devices in the plurality of semiconductor devices. An interconnect structure underlies the substrate and includes a topmost conductive interconnect element adjacent to the substrate. A second isolation structure is disposed in the substrate and around the device region. A bottom surface of the second isolation structure is above a lower surface of the topmost conductive interconnect element.

Abstract: The present disclosure, in some embodiments, relates to an image sensor integrated chip. The image sensor integrated chip includes a plurality of gate structures arranged along a first side of a substrate within a plurality of pixel regions. An etch block structure is arranged on the first side of the substrate between neighboring ones of the plurality of gate structures. A contact etch stop layer (CESL) is arranged on the etch block structure between the neighboring ones of the plurality of gate structures. An isolation structure is disposed between one or more sidewalls of the substrate and extends from a second side of the substrate to the first side of the substrate. The etch block structure is vertically between the isolation structure and the CESL.

Abstract: A display panel and a method for manufacturing the same, and a displaying device, which relates to the technical field of displaying. The display panel includes: a displaying substrate, a color light filtering layer disposed at a light exiting side of the displaying substrate. The color light filtering layer includes a first light filtering structure and a second light filtering structure of unequal thicknesses, orthographic projections of the light filtering structures on the displaying substrate cover corresponding positions of the light emitting region, and a surface of the first light filtering structure at one side away from the displaying substrate and a surface of the second light filtering structure at one side away from the displaying substrate are in a same plane.

Abstract: The described positional awareness techniques employing sensory data gathering and analysis hardware with reference to specific example implementations implement improvements in the use of sensors, techniques and hardware design that can enable specific embodiments to find new area to cover by a robot encountering an unexpected obstacle traversing an area in which the robot is performing an area coverage task. The sensory data are gathered from an operational camera and one or more auxiliary sensors.

Abstract: Some embodiments relate to a semiconductor structure including a semiconductor substrate, and n interconnect structure disposed over the semiconductor substrate. The interconnect structure includes a dielectric structure and a plurality of metal lines that are stacked over one another in the dielectric structure. A through substrate via (TSV) extends through the semiconductor substrate to contact a metal line of the plurality of metal lines. A protective sleeve is disposed along outer sidewalls of the TSV and separates the outer sidewalls of the TSV from the dielectric structure of the interconnect structure.

Abstract: The present disclosure relates to a system for mounting a display on a wall. The system may include at least one hanger assembly arranged in a vertical direction. The hanger assembly includes a hook assembly configured to engage a wall panel and a movable hanger configured to slidably engage with the hook assembly such that the movable hanger slides in a vertical direction. The system may further include an adjustment assembly having at least one adjustment component and an adjustment actuator. The adjustment component includes an abutment surface configured to slidably engage with a support surface of the hook assembly. The adjustment actuator engages the at least one adjustment component such that the adjustment actuator translates in a direction transverse to the vertical direction to drive the adjustment component to also translate in the transverse direction relative to the movable hanger and the movable hanger to translate in the vertical direction.

Abstract: A method of forming a pattern in a photoresist layer includes forming a photoresist layer over a substrate, and reducing moisture or oxygen absorption characteristics of the photoresist layer. The photoresist layer is selectively exposed to actinic radiation to form a latent pattern, and the latent pattern is developed by applying a developer to the selectively exposed photoresist layer to form a pattern.

Abstract: A semiconductor device and a method of forming the same are provided. The semiconductor device includes a first substrate, a capacitor within the first substrate, a diode structure within the first substrate adjacent the capacitor, and a first interconnect structure over the capacitor and the diode structure. A first conductive via of the first interconnect structure electrically couples the capacitor to the diode structure.

Abstract: A head mounted display device including a host, two brackets, and two rotating components is provided. The two brackets are respectively pivotally connected to opposite sides of the host. Each bracket includes a first segment and a second segment. The first segment is pivotally connected to the second segment, and the first segment is pivotally connected to the host. The two rotating components are respectively assembled to the first segment and the second segment of each bracket to control an angle between the first segment and the second segment.

Abstract: A micro-electromechanical system (MEMS) device includes a movable comb structure located in a cavity within an enclosure, and a stationary structure affixed to the enclosure. The movable comb structure includes a comb shaft portion and movable comb fingers laterally protruding from the comb shaft portion. The movable comb structure includes a metallic material portion. The movable structure and the stationary structure are configured to generate an electrical output signal based on lateral movement of the movable structure relative to the stationary structure.

Abstract: A data reading method, a memory storage device, and a memory control circuit unit are disclosed. The method includes: receiving a read command from a host system, and the read command instructs reading data from at least one logical unit, and the logical unit is mapped to a first physical unit; obtaining state information of at least two neighboring memory cells in the first physical unit; determining an electrical parameter offset value corresponding to the neighboring memory cells according to the state information; and sending a read command sequence according to the electrical parameter offset value, and the read command sequence instructs reading the first physical unit based on at least one electrical parameter, and the electrical parameter is controlled by the electrical parameter offset value.

Abstract: Some embodiments relate to a method. In the method, semiconductor devices are formed on a frontside of a semiconductor substrate. A trench is formed in a backside of the semiconductor substrate. Conductive and insulating layers are alternatingly formed in the trench on the backside of the semiconductor substrate to establish a backside capacitor. A backside interconnect structure is formed on the backside of the semiconductor substrate to couple to capacitor electrodes of the backside capacitor.