Abstract: A semiconductor structure and a method for forming same are provided, the forming method including: providing a base including a plurality of adjacent device unit regions, an initial device gate structure spanning a plurality of device unit regions being formed on the base; etching a portion of the initial device gate structure in thickness at a junction between the adjacent device unit regions to form a top opening; forming a spacer layer on a side wall of the top opening; etching a remainder of the initial device gate structure exposed from the spacer layer, and forming a bottom opening exposed from the base within the remainder of the initial device gate structure, the remainder of the initial device gate structure being used as a device gate structure; and forming an isolation structure within the top opening and the bottom opening. The spacer layer is configured to adjust a width of the bottom opening, so that the width of the bottom opening is less than a width of the top opening.

Abstract: In a method for image transmitting executed in a transmitting device, three data transmitting channels are established, the three data transmitting channels are a first channel, a second channel and a third channel. An image of a video is obtained, and the image is divided into a region of interest and a background region. A first data of the region of interest and a second data of the background region are obtained, and the first data is encoded through fountain coding to obtain a third data. The first data, the second data, and the third data are respectively transmitted through the first channel, the second channel, and the third channel to a receiving device. A network condition is received, and whether the network condition matches a preset condition is determined. When the network condition matches the preset condition, the first data is compensated according to a first preset algorithm.

Abstract: A method for forming an epitaxial source/drain structure in a semiconductor device includes providing a substrate having a plurality of fins extending from the substrate. In some embodiments, a liner layer is formed over the plurality of fins. The liner layer is patterned to expose a first group of fins of the plurality of fins in a first region. In some embodiments, a first epitaxial layer is formed over the exposed first group of fins and a barrier layer is formed over the first epitaxial layer. Thereafter, the patterned liner layer may be removed. In various examples, a second epitaxial layer is selectively formed over a second group of fins of the plurality of fins in a second region.

Abstract: A semiconductor device and a method of making the same are provided. A method according to the present disclosure includes providing a workpiece comprising a first source/drain region in a first device region and a second source/drain region in a second device region, depositing a dielectric layer over the first source/drain region and the second source drain region, forming a first via opening in the dielectric layer to expose the first source/drain region and a second via opening in the dielectric layer to expose the second source/drain region, annealing the workpiece to form a first semiconductor oxide feature over the exposed first source/drain region and a second semiconductor oxide feature over the exposed second source/drain region, removing the first semiconductor oxide feature to expose the first source/drain region in the first via opening in dielectric layer, and selectively forming a first epitaxial feature over the exposed first source/drain region.

Abstract: In a method for image transmitting executed in a transmitting device, three data transmitting channels are established, the three data transmitting channels are a first channel, a second channel and a third channel. An image of a video is obtained, and the image is divided into a region of interest and a background region. A first data of the region of interest and a second data of the background region are obtained, and the first data is encoded through fountain coding to obtain a third data. The first data, the second data, and the third data are respectively transmitted through the first channel, the second channel, and the third channel to a receiving device. A network condition is received, and whether the network condition matches a preset condition is determined. When the network condition matches the preset condition, the first data is compensated according to a first preset algorithm.

Abstract: A method for forming an epitaxial source/drain structure in a semiconductor device includes providing a substrate having a plurality of fins extending from the substrate. In some embodiments, a liner layer is formed over the plurality of fins. The liner layer is patterned to expose a first group of fins of the plurality of fins in a first region. In some embodiments, a first epitaxial layer is formed over the exposed first group of fins and a barrier layer is formed over the first epitaxial layer. Thereafter, the patterned liner layer may be removed. In various examples, a second epitaxial layer is selectively formed over a second group of fins of the plurality of fins in a second region.

Abstract: An analysis apparatus according to an embodiment includes an extraction unit, a calculation unit, and an evaluation unit. The extraction unit extracts a detection value in a tumor region, a blood region, and a muscle region from a nuclear medicine image of a subject administered with a drug containing a radiolabeled anticancer drug that works by accumulating in a tumor. The calculation unit calculates a first comparison value that is a comparison result between the detection value in the blood region and the detection value in the tumor region, and a second comparison value that is a comparison result between the detection value in the muscle region and the detection value in the tumor region. The evaluation unit evaluates an accumulation of the drug in the tumor, based on the first comparison value and the second comparison value calculated by the calculation unit.

Abstract: A semiconductor device is provided, which includes a first semiconductor structure, a second semiconductor structure, and an active region. The first semiconductor structure includes a first dopant. The second semiconductor structure is located on the first semiconductor structure and includes a second dopant different from the first dopant. The active region includes a plurality of semiconductor pairs and is located between the first semiconductor structure and the second semiconductor structure. One of the plurality of semiconductor pairs has a barrier layer and a well layer and includes the first dopant. The barrier layer has a first thickness and a first Al content, and the well layer has a second thickness and a second Al content, the second thickness is less than the first thickness, and the second Al content is less than the first Al content.

Abstract: A semiconductor structure and a method for forming same are provided, the forming method including: providing a base including a plurality of adjacent device unit regions, an initial device gate structure spanning a plurality of device unit regions being formed on the base; etching a portion of the initial device gate structure in thickness at a junction between the adjacent device unit regions to form a top opening; forming a spacer layer on a side wall of the top opening; etching a remainder of the initial device gate structure exposed from the spacer layer, and forming a bottom opening exposed from the base within the remainder of the initial device gate structure, the remainder of the initial device gate structure being used as a device gate structure; and forming an isolation structure within the top opening and the bottom opening. The spacer layer is configured to adjust a width of the bottom opening, so that the width of the bottom opening is less than a width of the top opening.

Abstract: A semiconductor device and a method of making the same are provided. A method according to the present disclosure includes providing a workpiece comprising a first source/drain region in a first device region and a second source/drain region in a second device region, depositing a dielectric layer over the first source/drain region and the second source drain region, forming a first via opening in the dielectric layer to expose the first source/drain region and a second via opening in the dielectric layer to expose the second source/drain region, annealing the workpiece to form a first semiconductor oxide feature over the exposed first source/drain region and a second semiconductor oxide feature over the exposed second source/drain region, removing the first semiconductor oxide feature to expose the first source/drain region in the first via opening in dielectric layer, and selectively forming a first epitaxial feature over the exposed first source/drain region.

Abstract: Semiconductor device is provided. The semiconductor device includes a base substrate and a first dielectric layer on the base substrate. The first dielectric layer contains a first trench and a second trench passing therethrough, and a width of the second trench is larger than a width of the first trench. The semiconductor device further includes a first gate dielectric layer and a first gate electrode in the first trench. A first recess is on the first gate dielectric layer between the first gate electrode and the first dielectric layer. The semiconductor device further includes a second gate dielectric layer and a second gate electrode in the second trench. A second recess is on the second gate dielectric layer between the second gate electrode and the first dielectric layer. The semiconductor device further includes a first protection layer in the first recess and a second protection layer in the second recess.

Abstract: Semiconductor structure and fabrication method are provided. An exemplary method includes: providing a to-be-etched layer; forming a first mask material layer with a barrier region on the to-be-etched layer; forming a first mask groove and a second mask groove separated from each other in the first mask material layer and exposing two sidewalls of the barrier region along an extending direction of the first mask groove; forming barrier layers on exposed sidewalls of the barrier region; forming a first mask through hole in the barrier region of the first mask material layer by etching a portion of the barrier region of the first mask material layer by using the barrier layers as a mask; and forming a first groove, a second groove, and a through hole, by etching the to-be-etched layer using the barrier layers and the first mask material layer as a mask.

Abstract: A cyberattack behavior detection method and related apparatus are provided. The method includes receiving user upload information in a multilayer architecture, and detecting whether a cyberattack is included in the upload information. The upload information is only transmitted to a business logic layer for processing the upload information in response to the cyberattack not being detected.

Abstract: A cylindrical lithium battery having a positive pole and a negative pole at the same end, including a shell, a core in the shell, a cover and a recharging protection assembly mounted on top of the positive pole of the core, and is covered and fixed by the cover; the recharging protection assembly has an upper frame, a recharging protection panel, a lower frame, a positive pole nickel plate and a negative pole nickel plate; the recharging protection panel is disposed on the lower frame; a top surface of the recharging protection panel is welded with a gold-plated copper cap; one side of the recharging protection panel is provided with a USB charging port.

Abstract: A semiconductor structure a base substrate and a sidewall spacer layer formed on the base substrate. The sidewall spacer layer includes a plurality of first sidewall spacer layers and a plurality of second sidewall spacer layers spaced apart from each other. At least one sidewall of a second sidewall spacer layer of the plurality of second sidewall spacer layers is formed on a first sidewall spacer layer of the plurality of first sidewall spacer layers. The plurality of first sidewall spacer layers has a thickness greater than the plurality of second sidewall spacer layers, based on a surface of the base substrate. The plurality of first sidewall spacer layers has a material structure different than the plurality of second sidewall spacer layers.

Abstract: A system includes a programmable logic device including a communication interface configured to receive an encrypted deep learning model and a first key in a bitstream. In an embodiment, the programmable logic device includes a storage block configured to store the first key. The programmable logic device also includes a decryption block configured to decrypt the deep learning model using the first key. A method includes receiving, at a programmable logic device, the encrypted deep learning model and a first key in a bitstream. The method also includes decrypting, at the programmable logic device, the deep learning model using the first key. The method also includes implementing the deep learning model on the programmable logic device.

Abstract: A method for establishing a plurality of protocol data unit (PDU) sessions between a user equipment (UE) and a data network (DN) by the UE may comprise transmitting a message to establish the plurality of PDU sessions to at least one network function (NF) of a plurality of NFs, exchanging a signal to establish the plurality of PDU sessions among the UE, a radio access network (RAN), and the plurality of NFs based on the message, and establishing the plurality of PDU sessions between the UE and the DN according to predetermined priority and based on the signal, wherein each of the plurality of PDU sessions corresponds to a network slice (NS) for a particular service, wherein the message includes information about the particular service corresponding to the plurality of PDU sessions, and wherein the priority is determined based on the information about the particular service.

Abstract: A fabrication method for a semiconductor device is provided. The method includes: forming a semiconductor substrate including a first region and a second region; forming intrinsic fins protruding from the first region of the semiconductor substrate, and dummy fins protruding from the second region of the semiconductor substrate; forming a first isolation layer to cover a portion of sidewalls of the dummy fins and a portion of sidewalls of the intrinsic fins; forming a protection layer on surfaces of the intrinsic fins, to cover a portion of the intrinsic fins above a surface of the first isolation layer; removing the dummy fins and a portion of the first isolation layer in the second region; and forming a second isolation layer on the second region of the semiconductor substrate.

Abstract: An optoelectronic device includes a semiconductor stack including a first surface and a second surface opposite to the first surface; a first contact layer on the first surface; and a second contact layer on the second surface. The second contact layer is not overlapped with the first contact layer in a vertical direction. The second contact layer includes a plurality of dots separating to each other and formed of semiconductor material.