Abstract: Self-aligned gate cutting techniques are disclosed herein that provide dielectric gate isolation fins for isolating gates of multigate devices from one another. An exemplary device includes a first multigate device having first source/drain features and a first metal gate that surrounds a first channel layer and a second multigate device having second source/drain features and a second metal gate that surrounds a second channel layer. A dielectric gate isolation fin separates the first metal gate from the second metal gate. The dielectric gate isolation fin includes a first dielectric layer having a first dielectric constant and a second dielectric layer having a second dielectric constant disposed over the first dielectric layer. The second dielectric constant is greater than the first dielectric constant. The first metal gate and the second metal gate physically contact the first channel layer and the second channel layer, respectively, and the dielectric gate isolation fin.

Abstract: Disclosed is a cost-effective method to fabricate a multifunctional collimator structure for contact image sensors to filter ambient infrared light to reduce noises. In one embodiment, an optical collimator, includes: a dielectric layer; a substrate; a plurality of via holes; and a conductive layer, wherein the dielectric layer is formed over the substrate, wherein the plurality of via holes are configured as an array along a lateral direction of a first surface of the dielectric layer, wherein each of the plurality of via holes extends through the dielectric layer and the substrate from the first surface of the dielectric layer to a second surface of the substrate in a vertical direction, and wherein the conductive layer is formed over at least one of the following: the first surface of the first dielectric layer and a portion of sidewalls of each of the plurality of via holes, and wherein the conductive layer is configured so as to allow the optical collimator to filter light in a range of wavelengths.

Abstract: A device includes a substrate, a first semiconductor channel over the substrate, and a second semiconductor channel over the substrate laterally offset from the first semiconductor channel. A first gate structure and a second gate structure are over and laterally surround the first and second semiconductor channels, respectively. A first inactive fin is between the first gate structure and the second gate structure. A dielectric feature over the inactive fin includes multiple layers of dielectric material formed through alternating deposition and etching steps.

Abstract: A method for question-and-answer processing, an electronic device and a storage medium are provided. The method includes: receiving a content of a first to-be-processed question that is inputted; acquiring at least two first answer results of the content of the first to-be-processed question, where the at least two first answer results are generated based on at least two target generative models matched with the content of the first to-be-processed question respectively, the at least two target generative models are capable of answering the first to-be-processed question, and generative models of different types are trained based on different occupational scenes; and displaying the at least two first answer results.

Abstract: A power supply for a computer includes a base component, a top cover component and a fan component. The base component includes a bottom wall and two first direction side walls. The two first direction side walls are parallel to each other, and respectively connected to two ends of a first direction of the bottom wall. Each first direction side wall has two first extending portions, and the first extending portions extend along the first direction. The top cover component includes a top wall and two second direction side walls. The two second direction side walls are parallel to each other, and respectively connected to two ends of a second direction of the top wall, and respectively cover the first extending portions. The second direction is perpendicular to the first direction, and the first direction and the second direction are parallel to the bottom wall and the top wall.

Abstract: A semiconductor device includes a first type of light sensing units, where each instance of the first type of light sensing units is operable to receive a first amount of radiation; and a second type of light sensing units, where each instance of the second type of light sensing units is operable to receive a second amount of radiation, and the second type of light sensing units is arranged in an array with the first type of light sensing units to form a pixel sensor. The first amount of radiation is smaller than the second amount of radiation, and at least a first instance of the first type of light sensing units is adjacent to a second instance first type of light sensing unit.

Abstract: A semiconductor device structure, along with methods of forming such, are described. The structure includes a first and second gate electrode layers, and a dielectric feature disposed between the first and second gate electrode layers. The dielectric feature has a first surface. The structure further includes a first conductive layer disposed on the first gate electrode layer. The first conductive layer has a second surface. The structure further includes a second conductive layer disposed on the second gate electrode layer. The second conductive layer has a third surface, and the first, second, and third surfaces are coplanar. The structure further includes a third conductive layer disposed over the first conductive layer, a fourth conductive layer disposed over the second conductive layer, and a dielectric layer disposed on the first surface of the dielectric feature. The dielectric layer is disposed between the third conductive layer and the fourth conductive layer.

Abstract: A spin orbit torque magnetoresistive random access memory (SOT MRAM) includes at least a spin current source alloy layer, a ferromagnetic free layer, and an insulation layer. The spin current source alloy layer is a nickel-tungsten alloy layer. The ferromagnetic free layer is located on the spin current source alloy layer. The insulation layer is located on the ferromagnetic free layer. Since the nickel-tungsten alloy layer has favorable perpendicular magnetic anisotropic and can maintain a high spin Hall angle, it is suitable as a spin current source for the SOT MRAM.

Abstract: A portion of a buffer layer on a backside of a substrate of a photomask assembly may be removed prior to formation of one or more capping layers on the backside of the substrate. The one or more capping layers may be formed directly on the backside of the substrate where the buffer layer is removed from the substrate, and a hard mask layer may be formed directly on the one or more capping layers. The one or more capping layers may include a low-stress material to promote adhesion between the one or more capping layers and the substrate, and to reduce and/or minimize peeling and delamination of the capping layer(s) from the substrate. This may reduce the likelihood of damage to the pellicle layer and/or other components of the photomask assembly and/or may increase the yield of an exposure process in which the photomask assembly is used.

Abstract: In one embodiment, a system configures an image signal processor (ISP) of an autonomous driving vehicle (ADV) with a first set of ISP configuration parameters, where the ISP is used to process raw image data of an image sensor of the ADV based on the first set of ISP configuration parameters. The system determines whether one or more criteria is satisfied, where the one or more criteria corresponds to an expected change in a characteristic of ambient light being perceived by the image sensor of the ADV. In response to determining that the one or more criteria is satisfied, the system configures the ISP of the ADV with a second set of ISP configuration parameters, where the ISP is used to apply an image processing algorithm to raw image data based on the second set of ISP configuration parameters to generate an image.

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes multiple first semiconductor nanostructures over a substrate and multiple second semiconductor nanostructures over the substrate. The semiconductor device structure also includes a dielectric structure between the first semiconductor nanostructures and the second semiconductor nanostructures. The semiconductor device structure further includes a metal gate stack wrapped around the first semiconductor nanostructures and the second semiconductor nanostructures. The metal gate stack has a gate dielectric layer and a gate electrode. The gate dielectric layer extends along a sidewall of a lower portion of the dielectric structure. A topmost surface of the gate dielectric layer is between a topmost surface of the first semiconductor nanostructures and a topmost surface of the dielectric structure.

Abstract: A method includes forming a plurality of fin structures extending along a first direction. The method includes forming a dummy fin structure disposed between two adjacent fin structures. The dummy fin structure also extends along the first direction and includes a deformable layer. The method includes recessing portions of each fin structure. The method includes forming source/drain structures over the recessed fin structures. The method includes deforming the deformable layer of the dummy fin structure to apply either a tensile stress or a compressive stress on the source/drain structures coupled to each of the two adjacent fin structures.

Abstract: A semiconductor structure includes a first dielectric wall over a substrate, and two metal gate structures disposed at two sides of the first dielectric wall. Each of the metal gate structures includes a plurality of nanosheets stacked over the substrate and separated from each other, a high-k gate dielectric layer covering each of the nanosheets, and a metal layer covering and over the plurality of nanosheets and the high-k gate dielectric layer. The high-k gate dielectric layer of each metal gate structure is disposed between the metal layer of each metal gate structure and the first dielectric wall.

Abstract: A stretchable pixel array substrate, including a base and a component layer, is provided. The base has multiple first openings and multiple second openings. Each of the first openings has a first opening extending direction. Each of the second openings has a second opening extending direction. The first opening extending direction and the second opening extending direction are different. The first openings and the second openings are alternately arranged in a first direction and a second direction to define multiple islands and multiple bridges of the base. The component layer is disposed on the base and includes multiple island portions and multiple bridge portions. The island potions have multiple pixel structures and are respectively disposed on the islands of the base. The bridge portions have conductive wires and are respectively disposed on the bridges of the base. The conductive wires are electrically connected to the pixel structures.

Abstract: A leaky-wave antenna includes: first and second substrates opposite to each other; and an adjustable dielectric layer between the first and second substrates; the first substrate includes a first dielectric substrate, and first and second transmission lines on a side of the first dielectric substrate close to the adjustable dielectric layer; the first transmission line includes a first trunk line and at least one first main branch connected thereto, and a first auxiliary branch connected to the first main branch; the second transmission line includes a second trunk line and at least one second main branch connected thereto, and a second auxiliary branch connected to the second main branch; the first trunk line and the second trunk line are arranged side by side, with a first gap therebetween; the second substrate includes a second dielectric substrate and a reference electrode layer on the second dielectric substrate.

Abstract: The disclosure relates to a content processing method and apparatus, a device, and a storage medium. The method includes: showing a target content page to display a multimedia content; determining a content consumption intention on the multimedia content based on browsing information corresponding to the target content page; determining target summary information that adapted to the content consumption intention, where the target summary information is generated at least based on the multimedia content; in response to the content consumption intention being a shallow consumption intention, the target summary information is first summary information; and in response to the content consumption intention being a deep consumption intention, the target summary information is second summary information with a larger information content; and displaying the target summary information on the target content page.

Abstract: Various embodiments of the present disclosure provide a semiconductor device structure. In one embodiment, the semiconductor device structure includes a dielectric wall disposed over a substrate, first and second metal gate structure portions respectively disposed at either side of the dielectric wall. Each first and second metal gate structure portion includes a plurality of semiconductor layers vertically stacked and separated from each other, a high-K (HK) dielectric layer disposed to surround at least three surfaces of each of the semiconductor layers, and a gate electrode layer disposed between two neighboring semiconductor layers. The semiconductor device structure also includes a metal layer disposed on two opposing sidewalls of the dielectric wall.

Abstract: A radar system includes an ultrasonic radar unit and a warning device. The ultrasonic radar unit is configured to be detachably mounted on a vehicle, and is configured to output a pairing signal when a pairing function is activated and output a warning signal upon detecting an object that is within a range. The warning device is configured to be electrically connected to the ultrasonic radar unit and to be mounted inside the vehicle. The warning device is configured to wirelessly communicate with the ultrasonic radar unit to receive the warning signal and the pairing signal; when receiving the pairing signal, couple the ultrasonic radar unit to one of a plurality of warning areas that is on the warning device according to the pairing signal; control one of the warning areas that is coupled to the ultrasonic radar unit to output a visual warning upon receiving the warning signal.

Abstract: Embodiments of the present application provide a model training method and apparatus, and a device and a storage medium, and relate to the technical field of motion capture. The method includes: training a motion capture model according to a preset training set, wherein the motion capture model includes a time series prediction unit; performing, through a quantization node in the time series prediction unit, a quantization operation and an inverse quantization operation in sequence on model data passing through the quantization node; and adjusting a weight parameter of the time series prediction unit according to an update on a gradient of the time series prediction unit until the motion capture model converges, wherein the weight parameter includes a weight scaling parameter and a weight direction.

Abstract: A method of forming first and second fin field effect transistors (finFETs) on a substrate includes forming first and second fin structures of the first and second finFETs, respectively, on the substrate and forming first and second oxide regions having first and second thicknesses on top surfaces of the first and second fin structures, respectively. The method further includes forming third and fourth oxide regions having third and fourth thicknesses on sidewalls on the first and second fin structures, respectively. The first and second thicknesses are greater than the third and fourth thicknesses, respectively. The method further includes forming a first polysilicon structure on the first and third oxide regions and forming a second polysilicon structure on the second and fourth oxide regions.