Abstract: A fan module and computing device with the fan module are disclosed. The fan module includes a handle configured to actuate between an operation state and a release state. The handle in the release state allows a user to vertically remove the fan module from its respective fan module slot and away from the bottom panel.

Abstract: A computing system performs shared cache allocation to allocate cache resources to groups of tasks. The computing system monitors the bandwidth at a memory hierarchy device that is at a next level to the cache in a memory hierarchy of the computing system. The computing system estimates a change in dynamic power from a corresponding change in the bandwidth before and after the cache resources are allocated. The allocation of the cache resources are adjusted according to an allocation policy that receives inputs including the estimated change in the dynamic power and a performance indication of task execution.

Abstract: A computing system performs partial cache deactivation. The computing system estimates the leakage power of a cache based on operating conditions of the cache including voltage and temperature. The computing system further identifies a region of the cache as a candidate for deactivation based on cache hit counts. The computing system then adjusts the size of the region for the deactivation based on the leakage power and a bandwidth of a memory hierarchy device. The memory hierarchy device is at the next level to the cache in a memory hierarchy of the computing system.

Abstract: In an embodiment, a magnetic assembly includes: an inner permeance annulus; and an outer permeance annulus connected to the inner permeance annulus via magnets, wherein the outer permeance annulus comprises a peak region with a thickness greater than other regions of the outer permeance annulus.

Abstract: A supported metallocene catalyst includes a carrier and a metallocene component. The carrier includes an inorganic oxide particle and an alkyl aluminoxane material. The inorganic oxide particle includes at least one inorganic oxide compound selected from the group consisting of an oxide of Group 3A and an oxide of Group 4A. The alkyl aluminoxane material includes an alkyl aluminoxane compound and an alkyl aluminum compound that is present in amount ranging from greater than 0.01 wt % to less than 14 wt % base on 100 wt % of the alkyl aluminoxane material. The metallocene component is supported on the carrier, and includes one of a metallocene compound containing a metal from Group 3B, a metallocene compound containing a metal from Group 4B, and a combination thereof. A method for preparing the supported metallocene catalyst and a method for preparing polyolefin using the supported metallocene catalyst are also disclosed.

Abstract: A photomask cleaning tool includes various components to automatically remove a particle from a pellicle, such as a multi-jet nozzle to standardize and control the use of a gas to remove the particle, an ultrasonic probe to loosen the particle from the surface of the pellicle, a plurality of multi-jet nozzles to direct gas toward the particle from different directions, a control system to control the automated blower for various sizes and shapes of photomasks and for optimized particle removal techniques, and/or the like. In this way, the photomask cleaning tool is capable of removing a particle from a pellicle of a photomask in a manner that increases the effectiveness of removing the particle and reduces the likelihood of damage to the pellicle, which would otherwise result in expensive and time-consuming photomask rework.

Abstract: Provided are a novel compound and an organic electronic device using the same. The novel compound is represented by the following Formula (I): wherein *b is bonded to one of *a1 and a2*, and *c is bonded to the other of *a1 and a2*; L1 to L2 are each independently an arylene group having 6 to 60 ring carbon atoms; Y1 is selected from the group consisting of: a hydrogen atom, a deuterium atom, an alkyl group having 1 to 12 carbon atoms, and an aryl group having 6 to 30 ring carbon atoms; and m1 to m2 are each independently an integer 0 or 1.

Abstract: The invention provides an LED including a first-type semiconductor layer, an emitting layer, a second-type semiconductor layer, a first electrode, a second electrode, a Bragg reflector structure, a conductive layer and insulation patterns. The first electrode and the second electrode are located on the same side of the Bragg reflector structure. The conductive layer is disposed between the Bragg reflector structure and the second-type semiconductor layer. The insulation patterns are disposed between the conductive layer and the second-type semiconductor layer. Each insulating layer has a first surface facing toward the second-type semiconductor layer, a second surface facing away from the second-type semiconductor layer, and an inclined surface. The inclined surface connects the first surface and the second surface and is inclined with respect to the first surface and the second surface.

Abstract: The invention provides an LED including a first-type semiconductor layer, an emitting layer, a second-type semiconductor layer, a first electrode, a second electrode, a Bragg reflector structure, a conductive layer and insulation patterns. The first electrode and the second electrode are located on the same side of the Bragg reflector structure. The conductive layer is disposed between the Bragg reflector structure and the second-type semiconductor layer. The insulation patterns are disposed between the conductive layer and the second-type semiconductor layer. Each insulating layer has a first surface facing toward the second-type semiconductor layer, a second surface facing away from the second-type semiconductor layer, and an inclined surface. The inclined surface connects the first surface and the second surface and is inclined with respect to the first surface and the second surface.

Abstract: The invention provides an LED including a first-type semiconductor layer, an emitting layer, a second-type semiconductor layer, a first electrode, a second electrode, a Bragg reflector structure, a conductive layer and insulation patterns. The first electrode and the second electrode are located on the same side of the Bragg reflector structure. The conductive layer is disposed between the Bragg reflector structure and the second-type semiconductor layer. The insulation patterns are disposed between the conductive layer and the second-type semiconductor layer. Each insulating layer has a first surface facing toward the second-type semiconductor layer, a second surface facing away from the second-type semiconductor layer, and an inclined surface. The inclined surface connects the first surface and the second surface and is inclined with respect to the first surface and the second surface.

Abstract: An organic electroluminescent material is shown in General Formula (1), wherein R3 is a carboline group, R13 is a carbazole group or a carboline group, R1 to R2, R4 to R12 and R14 to R20 are each independently selected from the group consisting of a hydrogen atom, a fluorine atom, a cyano group, an alkyl group, a cycloalkyl group, an alkoxy group, a haloalkyl group, a thioalkyl group, a silyl group and an alkenyl group.

Abstract: The invention provides an LED including a first-type semiconductor layer, an emitting layer, a second-type semiconductor layer, a first electrode, a second electrode, a Bragg reflector structure, a conductive layer and insulation patterns. The first electrode and the second electrode are located on the same side of the Bragg reflector structure. The conductive layer is disposed between the Bragg reflector structure and the second-type semiconductor layer. The insulation patterns are disposed between the conductive layer and the second-type semiconductor layer. Each insulating layer has a first surface facing toward the second-type semiconductor layer, a second surface facing away from the second-type semiconductor layer, and an inclined surface. The inclined surface connects the first surface and the second surface and is inclined with respect to the first surface and the second surface.

Abstract: Provided is a light-emitting diode chip including a semiconductor device layer, a first electrode, a current-blocking layer, a current-spreading layer, and a second electrode. The semiconductor device layer includes a first-type doped semiconductor layer, a second-type doped semiconductor layer, and a light-emitting layer therebetween. The first electrode is electrically connected to the first-type doped semiconductor layer. The current-blocking layer is on the second-type doped semiconductor layer. The current-blocking layer is between the current-spreading layer and the second-type doped semiconductor layer. The second electrode is on the current-spreading layer and electrically connected to the second-type doped semiconductor layer. The current-blocking layer has a first surface facing the semiconductor device layer, a second surface back on to the semiconductor device layer, and a first inclined surface.

Abstract: An organic electroluminescent material is shown in General Formula (1), wherein R3 is a carboline group, R13 is a carbazole group or a carboline group, R1 to R2, R4 to R12 and R14 to R20 are each independently selected from the group consisting of a hydrogen atom, a fluorine atom, a cyano group, an alkyl group, a cycloalkyl group, an alkoxy group, a haloalkyl group, a thioalkyl group, a silyl group and an alkenyl group.

Abstract: An electronic apparatus and a sharing method thereof are provided. The electronic apparatus includes an input device, a control module, a signal processing module and a connection module and is selectively electrically connected to an external electronic apparatus. The input device produces a control signal according to input information. The control module determines whether to share the input device with the external electronic apparatus and according to the determination result, outputs the control signal either to the signal processing module through a first signal transmission path or to the connection module through a second signal transmission path. When receiving the control signal through the first signal transmission path, the signal processing module executes an input operation. When receiving the control signal through the second signal transmission path, the connection module outputs the control signal to the external electronic apparatus.

Abstract: The invention provides an LED including a first-type semiconductor layer, an emitting layer, a second-type semiconductor layer, a first electrode, a second electrode, a Bragg reflector structure, a conductive layer and insulation patterns. The first electrode and the second electrode are located on the same side of the Bragg reflector structure. The conductive layer is disposed between the Bragg reflector structure and the second-type semiconductor layer. The insulation patterns are disposed between the conductive layer and the second-type semiconductor layer. Each insulating layer has a first surface facing toward the second-type semiconductor layer, a second surface facing away from the second-type semiconductor layer, and an inclined surface. The inclined surface connects the first surface and the second surface and is inclined with respect to the first surface and the second surface.

Abstract: Provided is a light-emitting diode chip including a semiconductor device layer, a first electrode, a current-blocking layer, a current-spreading layer, and a second electrode. The semiconductor device layer includes a first-type doped semiconductor layer, a second-type doped semiconductor layer, and a light-emitting layer therebetween. The first electrode is electrically connected to the first-type doped semiconductor layer. The current-blocking layer is on the second-type doped semiconductor layer. The current-blocking layer is between the current-spreading layer and the second-type doped semiconductor layer. The second electrode is on the current-spreading layer and electrically connected to the second-type doped semiconductor layer. The current-blocking layer has a first surface facing the semiconductor device layer, a second surface back on to the semiconductor device layer, and a first inclined surface.

Abstract: An inspection apparatus is capable for inspecting at least one light-emitting device. The inspection apparatus includes a working machine and an inspection light source. The inspection light source is disposed on the working machine and located above the light-emitting device. A dominant wavelength of the inspection light source is smaller than a dominant wavelength of the light-emitting device so as to excite the light-emitting device and get an optical property of the light-emitting device.

Abstract: The invention relates to a patterned microstructure of a light emitting diode (LED) substrate. The substrate is provided with patterned microstructures arranged in an array. Each patterned microstructure includes a bottom surface and a lateral surface adjacent to the bottom surface. There is an angle ? between the lateral surface and the bottom surface, where 0°<?<90°. The length of the bottom surface ranges between 2.5 microns and 2.8 microns. An end of the lateral surface far away from the bottom surface is gradually shrunk into an intersection, and the height between the intersection and the bottom surface ranges between 1.5 microns and 1.9 microns. Accordingly, the invention can effectively achieve improving light extraction efficiency of the LED by optimizing the size of the patterned microstructure cyclically and alternately arranged on the LED substrate.

Abstract: An inspection apparatus is capable for inspecting at least one light-emitting device. The inspection apparatus includes a working machine and an inspection light source. The inspection light source is disposed on the working machine and located above the light-emitting device. A dominant wavelength of the inspection light source is smaller than a dominant wavelength of the light-emitting device so as to excite the light-emitting device and get an optical property of the light-emitting device.