Patents by Inventor Cheng-Po CHAU

Cheng-Po CHAU has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device having isolation structures with different thickness and method of forming the same
    Patent number: 10157770
    Abstract: A semiconductor device includes a substrate, a first isolation structure, a second isolation structure STI, and semiconductor fins. The first isolation structure is on the substrate and has a first thickness. The second isolation structure abuts the first isolation structure and has a second thickness. The first thickness is different from the second thickness. The semiconductor fins respectively abut the first isolation structure and the second isolation structure.
    Type: Grant
    Filed: July 26, 2017
    Date of Patent: December 18, 2018
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Cheng-Ta Wu, Chii-Ming Wu, Sen-Hong Syue, Cheng-Po Chau
  • SEMICONDUCTOR DEVICE HAVING ISOLATION STRUCTURE AND METHOD OF FORMING THE SAME
    Publication number: 20180151414
    Abstract: A semiconductor device includes a substrate, a first isolation structure, a second isolation structure STI, and semiconductor fins. The first isolation structure is on the substrate and has a first thickness. The second isolation structure abuts the first isolation structure and has a second thickness. The first thickness is different from the second thickness. The semiconductor fins respectively abut the first isolation structure and the second isolation structure.
    Type: Application
    Filed: July 26, 2017
    Publication date: May 31, 2018
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Cheng-Ta WU, Chii-Ming WU, Sen-Hong SYUE, Cheng-Po CHAU